• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.46-47
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• 2009

In this paper, a power combiner using IPD process for SK Telecom 3-Generation (2.13 ~ 2.15 GHz) application. The Integrated Passive Device (IPD) Wilkinson power Combiner shows compact size and high performance. It is simulated by 3D Electro Magnetic (EM) simulation because of more accurate measurement result wire-bonding effects. This combiner exhibit size of $1.2mm^2$ the insertion loss of 3.6 dB, and the return loss of 10.1 dB, and isolation of more than -7.7 dB.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.14 no.6
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• pp.579-589
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• 1989

In this paper, planar power dividers/combiners for millimeter waves K-band or bands which can be printed on the substrates of hybrid or monolithic IC by surface mounting are designed and studied. Power dividers/combiners, and the conductor loss of microstrip lines in particualr the existing Wilkinson power dividers/combiners is modified ad amployes by ist equivalent circuit. Microwave CAD program SUPEROMPACT is employed for the Wilkinson power combiner which is modified and analyzed to reduce the high frequency coupling between the branches of the combiner, and the method to diminish the sensitivity of the input reflection of $2^n$-way power dividers/combiners is studied employing the commerical microwave CAD program package SUPERCOMPACT.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.7
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• pp.613-624
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• 2002

Electrical characteristics of two types of 20 GHz Push-Push GaAs MESFET dielectric resonator oscillators having Wilkinson and T-junction power combiners for the output stage have been investigated and compared. So we have explained that the output power and phase noise properties of the Push-push FET DRO are depending on return loss and isolation characteristics of power combiner at the fundamental and the second harmonic frequencies. A Push-push oscillator for suppressing the fundamental frequency of 10 GHz and enhancing the second harmonic of 20 GHz has been designed and fabricated in microstrip configuration on 20 mil thick RT-Duroid($\varepsilon$$_{r}$ = 2.52) Teflon substrate. Return loss and isolation characteristics of T-junction and Wilkinson have been measured at the fundamental frequency of 10.2 GHz and the second harmonic frequency of 20.5 GHz. At the fundamental frequency, -12 dB return loss and -3.7 dB isolation have been measured for the T-junction power combiner, and -14 dB return loss and -11 dB isolation fur the Wilkinson power combiner. At the second harmonic frequency, -10 dB return loss and -7.5 dB isolation have been obtained for the T-junction power combiner, and -23 dB return loss and -22 dB isolation for the Wilkinson power combiner. As a result, we have confirmed that the oscillator based on the Wilkinson power combiner with better retrun loss and isolation characteristics produces more output power and better phase noise characteristics..

• Journal of Navigation and Port Research
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• v.26 no.3
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• pp.289-294
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• 2002

The broadband high power 3-way combiner was designed and fabricated for the digital TV repeater. To achieve increase of the bandwidth and the high power capability, Wilkinson type power divider was adopted in our research. First of all, Wilkinson type power divider of equal-split and unequal-split were combined, and the characteristics of the four port in-phase power combiner was simulated for each thickness of dielectric substrates. As the results of simulation, the power combiner fabricated by using dielectric substrate of 120 mil-thickness has the characteristics as follows: insertion loss of less than -651 dB, reflection coefficient of less than -13 dB, isolation among the output ports of less than -15 dB, and pose difference among the output ports of smiler than 13$^{\circ}$. Therefore, this power combiner was possible to improve the limit of microstrip line width due to high impedance, the problem of power loss due to interaction between strip lines in a high power combiner and narrow bandwidth simultaneously. Furthermore, making broadband and high power could be achieved since the fabricated 3-way combiner has good characteristics of insertion loss, the reflection coefficient, separation between ports, and phase difference.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.273-277
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• 2003

This paper presents a structure of the Wilkinson power divider that can suppress the 9ea harmonic output. The power divider consists of ${\lambda}/4n$ open stubs, which are located at the $3{\lambda}/4$ branches and parallel connection of resistor which shunts the output ports. Experimental results show that this power divider suppresses from 1st to 9th harmonic components to less than -37dB, while maintaining the characteristics of a conventional Wilkinson power divider; featuring an equal power split, a simultaneous impedance matching at all ports and a good isolation between output ports. these results agree quite well with the simulation results.

• Journal of Advanced Navigation Technology
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• v.6 no.1
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• pp.52-62
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• 2002

Electrical characteristics of two types of 20 GHz Push-Push GaAs MESFET dielectric resonator oscillators having Wilkinson and T-junction power combiners for the output stage have been investigated. The Push-Push oscillator for suppressing fundamental frequency 10 GHz and enhancing 20 GHz has been designed and realized in microstrip configuration on 20 mil thick RT-Duroid(${\varepsilon}_r$=2.52) teflon substrate. Two different types of power combiners, T-junction and Wilkinson, have been considered. Whenever one type of the combiners has been adopted for the output circuit, output power, phase noise and fundamental frequency suppression characteristics of the oscillator have been measured. When the Wilkinson power combiner was used, a maximum output power of 5.67 dBm, a phase noise of -105.5 dBc/Hz at an offset frequency of 100 kHz and a fundamental frequency suppression of -29.33 dBc have been measured. When the T-junction power combiner was used, a maximum output power of -1.17 dBm, a phase noise of -102.2 dBc/Hz at an offset frequency of 100 kHz and a fundamental frequency suppression of -17.84 dBc have been measured.

• Journal of Satellite, Information and Communications
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• v.12 no.2
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• pp.61-64
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• 2017

A phase shifter is one of the key components that change the phase of an individual antenna in millimeter-wave phased array system. This paper presents a low-loss phase shifter design with two parallel 2-state amplifiers. To get the same gain of $0^{\circ}/180^{\circ}$ each state, delay lines are in the middle of each stage of the 2-Stage amplifiers. Normally, when adding AMPs in parallel, a power combiner/divider such as Wilkinson Power Combiner/Divider is added, but they are directly connected because it can cause added losses in silicon wafer. The measured data shows 12dB gain and 174-degree phase difference at 5GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.4
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• pp.575-581
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• 2000

In this paper, a new active phase shifter is proposed using a vector sum method, and a unique digital phase control method of the circuit is suggested. The proposed scheme was designed and implemented using a Wilkinson power combiner/divider, a branch line 3 dB quadrature hybrid coupler and variable gain amplifiers (VGAs) using gate FETs(DGFETs). Furthermore, it was also shown that the proposed scheme is more efficient and works properly with the digital phase control method.

• Journal of the Semiconductor & Display Technology
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• v.15 no.4
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• pp.22-26
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• 2016

In this paper, we measured the efficiency of the receiver for 5.8GHz Microwave Smartphone Charging. We have designed and fabricated 1W and 2W power amplifier, respectively. A 1W power amplifier used a TC3531 power device of TRANSCOM Inc. In addition, a 2W power amplifier using the two TC3531 devices was constructed with divider and combiner. We used the Wilkinson divider theory for divider and combiner. The voltage was measured using the 1W and 2W power amplifier and integrated receivers to the distance of 50cm.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.6
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• pp.489-493
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• 1999

In this paper, an analysis of microstrip-slotline transition is performed using a 3D vector Finite Element Method(FEM). Artificial anistropic absorber technique is employed to implement an matching boundary condition in FEM. On the base of the analysis, power divider/combiner is designed. The structure of the power combiner already developed are Branch-line coupler, Rat-race coupler, Wilkinson coupler, Lange coupler, etc. Which are all planar, If the frequency goes up, the coupling efficiency of these planar couplers is decreased on account of skin loss. Especially, in millimeter-wave band, the efficiency of more than two ways combiner is radically reduced, so that application in power amplifier circuit is almost impossible, Microstrip-slotline transition structure is a power combining technique integrated into wave-guide, so that the loss is small and the efficiency is high. Theoretically, we can mount several transistors into the power-combiner. This makes it possible to develop a high power amplifier. The numerically calculated performances of the device that is, we believe, the best are compared to the experimental results in Ka-Band(26.5GHz-40GHz).