• Journal of the Korean Magnetics Society
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• v.2 no.3
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• pp.277-281
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• 1992

We have designed, fabricated and tested an integrated planar DC SQUID which incorporates input coil and mofulation coil in thin film structure. The SQUID uses Nb /Al-oxide /Nb Josephson junctions and Pd shunt resistors, and the SQUID loop incorporates two rings connected in series forming figure '8' structure and has the advantage of a negligibly small circulating current for the spatially homogeneous noise fields. The devices were fabricated using photolithographic technique, RF magnetron sputtering, anodic oxidation for insulation and lift-off process. The preliminary test of the fabricated SQUID at 4.2 K showed that the flux-voltage characteristics were smooth enough to adopt standard readout system, and the voltage noise was too small to be measured by direct method and so the white noise was thought to be less than $10^{-4}\;{\phi}_o/\;\sqrt{H_z}$.

• Journal of radiological science and technology
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• v.43 no.2
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• pp.79-85
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• 2020

The influence of metal artifact in CT image depends on the type of metal materialsm, the reconstruction algorithm, and scan parameters. The presence of metal artifacts was quantitatively evaluated by applying the standard and MAR algorithms through the phantom study. In the change of tube voltage applied the standard algorithm, metal artifact decreased to 44.9% for 80 vs 120 kVp, 24% for 100 vs 120 kVp, while the image taken at 140 kVp increased the artifact by 19% compared to 120 kVp. When the tube current was increased from 100 to 300 mA, there was no significant difference in the CT value and noise. Black band and white strike artifacts occurred up to 65.9% in the adjacent ROI of the metal driver, whereas titanium screw produced lesser metal artifact than that of the metal driver. The combination of 120kVp or higher tube voltage-standard algorithm was effective in removing black band artifacts as well as white streak by high density materials. However, MAR reconstruction algorithm was useful in improving image quality under the environment of low kVp and high density materials, without increase of radiation exposure.

• Journal of the Korean institute of surface engineering
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• v.52 no.5
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• pp.265-274
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• 2019

Formation behavior of PEO (Plasma Electrolytic Oxidation) films on AZ31 Mg alloy was investigated under application of 310 Hz AC as a function of $Na_3PO_4$ concentration from 0.02 M to 0.2 M. Film formation voltage and in-situ observation of arcs generated on the specimen surface were recorded with time, and surface morphologies of the PEO films were investigated using optical microscopy, confocal scanning laser microscopy and scanning electron microscopy. PEO film formation voltage decreased linearly with increasing $Na_3PO_4$ concentration which is attributed to the increase of solution pH. PEO films were grown uniformly over the entire surface in $Na_3PO_4$ solutions between 0.05 M and 0.1 M. However, non-uniform PEO films with white spots were formed in $Na_3PO_4$ solutions containing more than 0.1 M. Thickness and roughness of PEO films on AZ31 Mg alloy increased linearly with increasing $Na_3PO_4$ concentration and their increasing rates appeared to be much higher under 1 M than above 1 M. The experimental results suggest that phosphate ions can contribute to the formation of PEO films but higher $Na_3PO_4$ concentration more than 1 M results in local damages of PEO films due to repeated generation of white arcs at the same surface site of AZ31 Mg alloy.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1520-1521
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• 2008

There are several ways to demonstrate white organic light emitting diodes (OLEDs) for displays and solid state lighting applications. Among these approaches are the stacked three primary or two complementary colors light-emitting layers, multiple-doped emissive layer, and excimer and exciplex emission [1-10]. We report on white phosphorescent excimer devices by using two light emitting materials based on platinum complexes. These devices showed a peak EQE of 15.7%, with an EQE of 14.5% (17 lm/W) at $500\;cd/m^2$, and a noticeable improvement in both the CIE coordinates (0.381, 0.401) and CRI (81). Devices with the structure ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 12% FPt (10 nm) /26 mCPy: 2% Pt-4 (15 nm)/BCP (40 nm)/CsF/Al [device 1], ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4 (15 nm)/26 mCPy: 12% FPt (10 nm)/BCP (40 nm)/CsF/Al [device 2], and ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4: 12% FPt (25 nm)/BCP (40 nm)/CsF/Al [device 3] were fabricated. In these cases, the emissive layer was either the double-layer of 26 mCPy:12% FPt and 15 nm 26 mCPy: 2% Pt-4, or the single layer of 26mCPy with simultaneous doping of Pt-4 and FPt. Device characterization indicates that the CIE coordinates/CRI of device 2 were (0.341, 0.394)/75, (0.295, 0.365)/70 at 5 V and 7 V, respectively. Significant change in EL spectra with the drive voltage was observed for device 2 indicating a shift in the carrier recombination zone, while relatively stable EL spectra was observed for device 1. This indicates a better charge trapping in Pt-4 doped layers [10]. On the other hand, device 3 having a single light-emitting layer (doped simultaneously) emitted a board spectrum combining emission from the Pt-4 monomer and FPt excimer. Moreover, excellent color stability independent of the drive voltage was observed in this case. The CIE coordinates/CRI at 4 V ($40\;cd/m^2$) and 7 V ($7100\;cd/m^2$) were (0.441, 0.421)/83 and (0.440, 0.427)/81, respectively. A balance in the EL spectra can be further obtained by lowering the doping ratio of FPt. In this regard, devices with FPt concentration of 8% (denoted as device 4) were fabricated and characterized. A shift in the CIE coordinates of device 4 from (0.441, 0.421) to (0.382, 0.401) was observed due to an increase in the emission intensity ratio of Pt-4 monomer to FPt excimer. It is worth noting that the CRI values remained above 80 for such device structure. Moreover, a noticeable stability in the EL spectra with respect to changing bias voltage was measured indicating a uniform region for exciton formation. A summary of device characteristics for all cases discussed above is shown in table 1. The forward light output in each case is approximately $500\;cd/m^2$. Other parameters listed are driving voltage (Bias), current density (J), external quantum efficiency (EQE), power efficiency (P.E.), luminous efficiency (cd/A), and CIE coordinates. To conclude, a highly efficient white phosphorescent excimer-based OLEDs made with two light-emitting platinum complexes and having a simple structure showed improved EL characteristics and color properties. The EQE of these devices at $500\;cd/m^2$ is 14.5% with a corresponding power efficiency of 17 lm/W, CIE coordinates of (0.382, 0.401), and CRI of 81.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.688-691
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• 2004

In this study, we synthesized a new red emitting material of a Red225 doped into $Alq_3$ (tris(8-quinolinolato)aluminum (III)) and fabricated white organic light-emitting diodes (OLEDs) with a simple device structure. With a blue emitting material of DPVBi (4,4'-bis(2,2'-diphenylvinyl)1,1'-biphenyl) that can transfer effectively both a hole and an electron, OLEDs with a narrow emission layer could be possible without a hole-blocking layer. Consequently, the driving voltage and stability of devices have been improved. The devices show the Commission Internationale d'Eclairage (CIE) chromaticity coordinates of (0.36, 0.35) at luminance of 2000 cd/$m^2$. The luminous efficiency is about 3.5 cd/A, luminance is about 12000 cd/$m^2$ and current density is about 350 mA/$cm^2$ at 12 V, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1583-1586
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• 2006

All non-dopant white organic light-emitting diodes (WOLEDs) have been realized by using solid state highly fluorescent red bis(4-(N-(1- naphthyl)phenylamino)phenyl)fumaronitrile (NPAFN) and amorphous bipolar blue light-emitting 2-(4- diphenylamino)phenyl-5-(4-triphenylsilyl)phenyl- 1,3,4-oxadiazole (TPAOXD), together with well known green fluorophore tris(8- hydroxyquinolinato)aluminum $(Alq_3)$. The fabrication of multilayer WOLEDs did not involve the hard-tocontrol doping process. Two WOLEDs, Device I and II, different in layer thickness of $Alq_3$, 30 and 15 nm, respectively, emitted strong electroluminescence (EL) as intense as $25,000\;cd/m^2$. For practical solid state lighting application, EL intensity exceeding $1,000\;cd/m^2$ was achieved at current density of $18-19\;mA/cm^2$ or driving voltage of 6.5-8 V and the devices exhibited external quantum efficiency $({\eta}_{ext})$ of $2.6{\sim}2.9%$ corresponding to power efficiency $({\eta}_P)$ of $2.1{\sim}2.3\;lm/W$ at the required brightness.

• Korean Journal of Materials Research
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• v.17 no.4
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• pp.198-202
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• 2007

A new organic light emitting device(OLED) with two peak wavelength(blue and yellow) emission was fabricated using the selective doping in a single fluorescent host , and its electrical and optical characteristics were investigated. The fabricated device showed the luminance and efficiency of 1600 $Cd/m^2$ and 2.4 Im/W under the applied voltage of 10V, respectively. And its electroluminescent spectra had two peak wavelengths of 470nm and 560nm emitting bluish white light. The OLED with dual wavelength emission in this experiment is likely to be developed as a white OLED with simpler fluorescent system than conventional devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.7
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• pp.490-495
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• 2018

A multielectrode electronic paper film capable of expressing a single-color image was fabricated by injecting color electronic ink into an electronic paper panel; on the basis of its reflective or transparent properties, it is possible to control the expression of six single-color images and their transmittance. In this study, a single-color image was represented by driving a multielectrode electronic paper film; color coordinates were measured. The six capable single colors were yellowish pink (0.444, 0.354), white (0.355, 0.352), black (0.241, 0.241), orange (0.514, 0.360), reddish orange (0.606, 0.338), and reddish purple (0.469, 0.145). Color particles used in this paper were black and white, by which six colors are accomplished, but more single-color images can be combined by using cyan, magenta, and yellow particles.

• Journal of Electrical Engineering and Technology
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• v.9 no.2
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• pp.695-706
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• 2014

Partial discharge (PD) measurements have emerged as a dominant investigative tool for condition monitoring of insulation in high voltage equipment. But the major problem behind them the PD signal is severely polluted by several noises like White noise, Random noise, Discrete Spectral Interferences (DSI) and the challenge lies with removing these noise from the onsite PD data effectively which leads to preserving the signal for feature extraction. Accordingly the paper is mainly classified into two parts. In first part the PD signal is artificially simulated and mixed with white noise. In second part the PD is measured then it is subjected to the proposed denoising techniques namely Translation Invariant Wavelet Transform (TIWT). The proposed TIWT method remains the edge of the original signal efficiently. Additionally TIWT based denoising is used to suppress Pseudo Gibbs phenomenon. In this paper an attempt has been made to review the methodology of denoising the PD signals and shows that the proposed denoising method results are better when compared to other wavelet-based approaches like Fast Fourier Transform (FFT), Discrete Wavelet Transform (DWT), by evaluating five different parameters like, Signal to noise ratio, Cross-correlation coefficient, Pulse amplitude distortion, Mean square error, Reduction in noise level.

• Journal of the Semiconductor & Display Technology
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• v.5 no.3 s.16
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• pp.1-4
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• 2006

White-light-emitting ZnS:Mn, Cu, Cl phosphors with spherical shape and the size of $20\;{\mu}m$ are successfully synthesized. They have the double phases of cubic and hexagonal structures. They are applied to electroluminescent (EL) devices by silk screen method with the following structure: $electrode/BaTiO_3$ insulator layer ($50{\sim}60\;{\mu}m$)/ ZnS:Mn, Cu, Cl phosphor layer ($30{\sim}50\;{\mu}m$)/ITO glass. The EL devices are driven with the voltage of 100 V and the frequency of 400 Hz. The EL devices show the three emission peaks. The blue and green emission bands are originated from $CICu^{2+}$ transition and $ClCu^+$ transition, respectively. The yellow emission band results from $^4T^6A$ transition of $Mn^{2+}$ ion. As an increase of Cu concentrations, the blue and green emission intensities decrease whereas the yellow emission intensity increases; the quality becomes warm white. It is due to the energy transfer from the blue and green bands to the yellow band.