• Journal of Naturopathy
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• v.10 no.2
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• pp.71-76
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• 2021

Background: The understanding of back-pain as one of the commonest clinical presentations, made the path to the present study. More than three-quarters of the world's population experience back-pain at some time in their lives Purpose: The present study has evaluated the selected Naturopathic therapeutic procedures on individuals with low back-pain. Methods: Thirteen patients were selected for the study and randomly divided into two groups, viz., Group A, Naturopathic group and Group B, Control group. One patient discontinued. Naturopathic group was treated with mud pack, aromatherapy massage with Eucalyptus oil, acupressure, steam, wet trunk pack, exercises, relaxation and breathing exercises. Advice for life style and diet was given for patients of both the groups. The effect of the therapy was assessed subjectively and objectively. Particular scores drawn for Naturopathic group and control group were individually analyzed before and after treatment and the values were compared using standard statistical protocols. Results: Naturopathic intervention revealed 100% relief in both subjective and objective parameters (i.e., 6 out of 14 parameters showed statistically highly significant P < 0.01 results, while 8 showed significant results P < 0.05). Conclusion: Statistically highly significant results of this study point out the successful management of the multi factorial low back-pain with a multi focused Naturopathic treatment approach. Such encouraging results may pave the way for a future study on a large sample in a longer duration incorporating clinical investigations.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.63-74
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• 1994

The ultrathin oxide films less than 100$\AA$ were grown by thermal oxidation in $N_2O$ ambient to improve the controllability of thickness, thickness uniformity, process reproducibility and their electrical properties. Oxidation rate was reduced significantly at very thin region due to the formation of oxynitride layer in $N_2O$ ambient and moreover nitridation of the oxide layer was simultaneously accompanied during growth. The nitrogen incorporation in the grown oxide layer was characterized with the wet chemical etch-rate and ESCA analysis of the grown oxide layer. All the oxides thin films grown in $N_2O$, pure and dilute $O_2$ ambients show Fowler-Nordheim electrical conduction. The electrical characteristics of thin oxide films grown in $N_2O$ such as leakage current, electrical breakdown, interface trap density generation due to the injected electron and reliability were better than those in pure or dilute ambient. These improved properties can be explained by the fact that the weak Si-0 bond is reduced by stress relaxation during oxidation and replacement by strong Si-N bond, and thus the trap sites are reduced.