• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.11-13
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• 1992

The dielectric reliability of the Thin $SiO_2$ films of wet oxidation on n-type Si substrates has been studied by using self-healing method of breakdown and according to injection time high frequence C-V tests. These experiments have been performed to investigate the dielectric breakdown mechanism of a thin film in which positive charge generation during high-field Fowler-Nordheim tunneling are considered. In addition, The weak spots and robust areas are distinguished so that the localized dielectric breakdown could be described.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.157-161
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• 1999

We investigated the effect of mechanical back side damage in Czochralski silicon wafer. The intensity of mechanical damage was evaluated by minority carrier recombination lifetime by laser excitation/microwave reflection photoconductance decay ($\mu$-PCD) technique, wet oxidation/preferential etching methods, near surface micro defect (NSMD) analysis, and X-ray section topography. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and NSMD density increased proportionally, also correlated to the oxidation induced stacking fault (OISF) density. Thus, NSMD technique can be used separately from conventional etching method in OISF measurement.

• Korean Journal of Materials Research
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• v.13 no.12
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• pp.779-784
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• 2003

Nickel powders were obtained by various preparation methods, and their sintering characteristics were investigated. Nickel powders made by wet chemical process (WCP) had a higher surface area and more narrow size distribution than that of chemical vapor deposition (CVD) method. Nickel-oxide powders by the WCP method were prepared at $200^{\circ}C$ for 3 hr. The oxidation behaviour of nickel-oxide powder is similar with that of the CVD method. Nickel powders made by the WCP method showed a higher shrinkage in the range of $600^{\circ}C$∼$900^{\circ}C$ than that of commercial powder made by the CVD method. The similar results were observed on the surface microstructure of sintered bodies by SEM measurements.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.4
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• pp.408-413
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• 1995

We investigated the effect of mechanical backside damage upon minority carrier recombination lifetime measurement in Czochralski silicon substrate by laser excitation/microwave reflection photoconductance decay method. The intensity of mechanical damage was evaluated by X-ray double crystal rocking curve, X-ray section topography and wet oxidation/preferential etch methods. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and the threshold full width at half maximum value which affect minority carrier lifetime measurement is about 13 secs.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.98-99
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• 2014

질산산화법(nitric acid oxidation method)은 저온에서 안정적인 산화막을 형성하는 직접산화공정으로 azeotropic point(68 wt%)인 120도 이하의 온도에서 산화막을 형성한다. 120도에서 형성한 질산산화막은 CVD법으로 형성한 산화막 보다 낮은 누설전류밀도(leakage current density)를 나타낸다. 또한 질산의 농도가 증가함에 따라 형성한 산화막의 누설전류밀도가 감소하며, 이는 열산화법으로 형성한 산화막 보다 낮다. 질산산화의 낮은 누설전류밀도는 형성한 산화막의 높은 원자 밀도와 낮은 계면준위밀도에 의한 것으로 이 특성을 이용하여 게이트 절연막(gate insulator)과 태양전지의 passivation막으로 응용되고 있다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.117-123
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• 1998

We investigated the effect of mechanical backside damage in Czochralski grown silicon wafer. The intensity of mechanical damage was evaluated by minority carrier recombination lifetime by laser excitation/microwave reflection photoconductivity decay method, photo-acoustic displacement method, X-ray section topography, and wet oxidation/preferential etching methods. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and the photo-acoustic displacement values increased proportionally, and it was at Grade 1: Grade 2:Grade 3 = 1:19.6:41 that the normalized relative quantization ratio of excess photo-acoustic displacement in damaged wafer was calculated, which are normalized to the excess PAD from sample Grade 1.

• Journal of the Korean Ceramic Society
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• v.34 no.6
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• pp.583-590
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• 1997

The effects of Mn2O3 and Y2O3 additives on the microstructure and dielectric properties of Sr(Zr, Ti)O3 have been investigated. Powders with Sr(Zr1-xTix)O3(0$\leq$x$\leq$0.1) composition were prepared by the conventional solid state processing from commercial TiO2 and precipitation-processed ZrO2. The powders containing sintering additives of Mn2O3 and Y2O3 were compacted and then sintered at 1,55$0^{\circ}C$ for 4 h to get>97% relative density. Mn2O3 suppressed the grain growth and Y2O3 enhanced the density of sintered body. The oxidation state of Mn ions were determined by a chemical wet method and EPR spectroscopy. Mn ions were present as Mn2+ and Mn4+ in SrZrO3, while as Mn3+ and Mn4+ in Ti-substituted Sr(Zr, Ti)O3. With the substitution of Ti, the lattice parameters of SrZrO3 decreased and its dielectric constant increased with remarkable decrease in Q value. The dielectric constant of Sr(Zr, Ti)O3 was in the range of 30 to 40, Q values 1,200~5,400 at 6 GHz and temperature coefficient of resonant frequency -67~100 ppm/K.

• Korean Journal of Materials Research
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• v.31 no.12
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• pp.719-726
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• 2021

Through the process of chemical vapor deposition, Tungsten Hexafluoride (WF₆) is widely used by the semiconductor industry to form tungsten films. Tungsten Hexafluoride (WF₆) is produced through manufacturing processes such as pulverization, wet smelting, calcination and reduction of tungsten ores. The manufacturing process of Tungsten Hexafluoride (WF₆) is required thorough quality control to improve productivity. In this paper, a real-time detection system for oxidation defects that occur in the manufacturing process of Tungsten Hexafluoride (WF₆) is proposed. The proposed system is implemented by applying YOLOv5 based on Convolutional Neural Network (CNN); it is expected to enable more stable management than existing management, which relies on skilled workers. The implementation method of the proposed system and the results of performance comparison are presented to prove the feasibility of the method for improving the efficiency of the WF₆ manufacturing process in this paper. The proposed system applying YOLOv5s, which is the most suitable material in the actual production environment, demonstrates high accuracy (mAP@0.5 99.4 %) and real-time detection speed (FPS 46).

• Journal of the Korean Wood Science and Technology
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• v.32 no.1
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• pp.9-16
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• 2004

This research was carried out to investigate the component isolation method from liquefied waste paper. and isolated component was analyzed by molecular weight distribution with gel chromatography and nitrobenzene-oxidation analysis. In the aspect of liquefaction ratio, wet defibration fiber are better than dry defibration fiber because of wet defiberation fiber was easy to access of chemical solution. The optimal liquefaction condition of waste paper was treated at 190℃ for 60 min(cresol 2 ㎖, water 4 ㎖, phosphoric acid 0.5 ㎖ based on waste paper 1 g). In the liquefied waste paper, lignin and carbohydrate were separated with two interfacial layer(cresol layer, water layer). In the chemical analysis of isolated lignin, molecular weight distribution of isolated lignin was below 1,000.

• Applied Chemistry for Engineering
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• v.28 no.2
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• pp.221-229
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• 2017

In this study, a wet impregnation method was applied to catalysts based on the active metal Pt in order to confirm the oxidation characteristics of various commercial alumina supports at room temperature. The catalysts were characterized using XPS, CO-chemisorption, and BET. Various $Pt/Al_2O_3$ catalysts controlled the oxygen species of Pt by the electronegativity of electrons and charges when the catalyst was prepared according to the heat treatment conditions. The reason that the dispersion degree decreases with increasing Pt loading seems to be attributed to HT (Huttig Temperature) of Pt. In addition, the minimum hydrogen concentration that can be controlled at room temperature can control hydrogen from metallic Pt up to 1.0 vol% at over 70.09% in the catalyst.