• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.398-400
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• 1998

In this paper, the etching studies for n-GaN were carried out using the wet chemical, the photo-enhanced-chemical, and the electro-chemical etching methods. The experimental results show that n-GaN is etched in diluted NaOH solution at room temperture and the etched thickness of NaOH and electron concentrations. Te etching rate of n-GaN samples with n.simeq.1*10$^{19}$ cm$^{-3}$ were used to compare the photo-enhanced-chemical etching with the electrochemical etching methods. The removed thickness was 680.angs./25min by the electrochemical etching methods. The removed thickness was 680 .angs./25min by the electrochemical etching method ad 784.angs./25min by the photoenhanced-chemical etching method. The patterns are 100.mu.m*100.mu.m rectangulars covered with SiO$_{2}$film. It is shown that the profile of etched side-wall of the pattern is vertical without dependance of the n-GaN orientations.

• Journal of the Korean Ceramic Society
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• v.28 no.1
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• pp.74-78
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• 1991

Willemite powders which have been prepared by solid state reaction were easy to intermixed impurities, and particle surfaces were demaged in the progress of crushing. The above defacts were easy to accompany non-crystallization for mechanochemical effects and luminescence efficiency was deteriorated. The goal of this study improve each of defacts, and synthesize high purity and fine Mn doped willemite powders by wet and hydrothermal methods without crushing progress. It has been experimentally verified that the single phase Zn1.98Mn0.02SiO4 willemite powders which prepared by hydrothermal synthes is at 220$^{\circ}C$ for 10 hours in 2N KOH solution. The products are like needle and composition is the same with starting composition.

• Journal of the Semiconductor & Display Technology
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• v.2 no.4
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• pp.37-40
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• 2003

We have studied micro-machining technologies to fabricate parts and sensors used in the semiconductor equipment. The studies were based on the silicon integrated circuit processes, and composed of the anisotropic etching of single crystal silicon to fabricate a membrane structure for hot and cold junctions in the infrared absorber. KOH and TMAH were used as etching solutions for the anisotropic wet etching for membrane structure formation. The etching characteristic was observed for the each solution, and etching rate was measured depending upon the temperature and concentration of the etching solution. The different characteristics were observed according to pattern directions and etchant concentration. The pattern was made to incline $45^{\circ}$ on the primary flat, and optimum etching property was obtained in the case of 30 wt% and $90^{\circ}C$ of KOH etching solution for the formation of the membrane structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• Korean Journal of Materials Research
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• v.7 no.1
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• pp.76-80
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• 1997

'4 NiAl coating process was applied on 316 stainless steel to retard the corrosion of the wet- seal area of separator for the molten carbonate fuel cell. The Nit11 phasc on the stainless steel substrate could be formed by pre-coating with Ni, plated with A1 and ther, heat treated at $800^{\circ}C$ for 3 hr in $H_2/N_2$ gas atmosphere. The corrosion protection behavior of YiAl coating layer was stuilied under immersion condition in molten cxhonate salt($62^{m}/_{o}Li_2CO_3-38^{m}/_{o}/K_{2}CO_{3}$) at $650^{\circ}C$. The NiAl coating layer ticposited on the AiSi 316 stainless steel had high corrosion resistance in molten carbor. dte salt. The corrosion resistance of XiAl (~~jpoared to be associated with the .A1 oxide formed on the surface of coating layer.

• Advances in concrete construction
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• v.2 no.2
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• pp.109-123
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• 2014

This paper presents chloride induced corrosion durability of reinforcing steel in geopolymer concretes containing different contents of sodium silicate ($Na_2SiO_3$) and molarities of NaOH solutions. Seven series of mixes are considered in this study. The first series is ordinary Portland cement (OPC) concrete and is considered as the control mix. The rest six series are geopolymer concretes containing 14 and 16 molar NaOH and $Na_2SiO_3$ to NaOH ratios of 2.5, 3.0 and 3.5. In each series three lollypop specimens of 100 mm in diameter and 200 mm in length, each having one 12 mm diameter steel bar are considered for chloride induced corrosion study. The specimens are subjected to cyclic wetting and drying regime for two months. In wet cycle the specimens are immersed in water containing 3.5% (by wt.) NaCl salt for 4 days, while in dry cycle the specimens are placed in open air for three days. The corrosion activity is monitored by measuring the copper/copper sulphate ($Cu/CuSO_4$) half-cell potential according to ASTM C-876. The chloride penetration depth and sorptivity of all seven concretes are also measured. Results show that the geopolymer concretes exhibited better corrosion resistance than OPC concrete. The higher the amount of $Na_2SiO_3$ and higher the concentration of NaOH solutions the better the corrosion resistance of geopolymer concrete is. Similar behaviour is also observed in sorptivity and chloride penetration depth measurements. Generally, the geopolymer concretes exhibited lower sorptivity and chloride penetration depth than that of OPC concrete. Correlation between the sorptivity and the chloride penetration of geopolymer concretes is established. Correlations are also established between 28 days compressive strength and sorptivity and between 28 days compressive strength and chloride penetration of geopolymer concretes.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.2105-2107
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• 2004

In this study, Spiral inductors on the $SiO_2$/Si(100) substrate were fabricated by the magnetron sputtering method. Cu thin film with the thickness of 2 ${\mu}m$ was deposited on the substrate. Also we fabricated square inductors through the wet chemical etching technique. The inductors are completely specified by the turn width and the spacing between spirals. Both the width and spacing between spirals were varied from 10 to 60 ${\mu}m$ and from 20 to 70 ${\mu}m$, respectively. Inductance and Q factor dependent on the RF frequency were investigated to analyze performance of inductor arrays. Also, We recommend that the reasonable Q-factors, spec's turns and thickness of the coil for inductors cab be set to be ideal condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.890-893
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• 2004

In this study, Spiral inductors on the $SiO_2/Si$(100) substrate were fabricated by the magnetron sputtering method. Cu thin film with the thickness of 2 ${\mu}m$ was deposited on the substrate. Also we fabricated square inductors through the wet chemical etching technique. The inductors are completely specified by the turn width and the spacing between spirals. Both the width and spacing between spirals were varied from 10 to 60${\mu}m$ and from 20 to 70 ${\mu}m$, respectively. Inductance and Q factor dependent on the frequency were investigated to analyze performance of spiral inductors.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.41-41
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• 2003

텅스텐(W)은 높은 thermal stability 와 process compatibility 및 우수한 corrosion r resistance 둥으로 integrated circuit (IC)의 gate 및 interconnection 둥으로의 활용이 대두되고 있으며, 차세대 thin film transistor liquid crystal display (TFT-LCD)의 gate 및 interconnection m materials 둥으로 사용되고 았다. 그러나, 이러한 장점을 가지고 있는 팅스텐 박막이 실제 공정상에 적용되가 위해서는 건식 식각이 주로 사용되는데, 이는 wet chemical 을 이용한 습식 식각을 사용할 경우 낮은 etch rate, line width 의 감소 및 postetch residue 잔류 동의 문제가 발생하기 때문이다. 또한 W interconnection etching 을 하기 위해서는 높은 텅스텐 박막의 etch rate 과 하부 layer ( (amorphous silicon 또는 poly-SD와의 높은 etch selectivity 가 필수적 이 라 할 수 있다. 그러 나, 지금까지 연구되어온 결과에 따르면 텅스탠과 하부 layer 와의 etch selectivity 는 2 이하로 매우 낮게 관찰되고 았으며, 텅스텐의 etch rate 또한 150nm/min 이하로 낮은 값을 나타내고 있다. 따라서 본 연구에서는 halogen-based inductively coupled plasma 를 이용하여 텅스텐 박막 식각시 여러 가지 첨가 가스에 따른 높은 텅스탠 박막의 etch rate 과 하부 layer 와의 높은 etch s selectivity 를 얻고자 하였으며, 그에 따른 식각 메커니즘에 대하여 알아보고자 하였다. $CF_4/Cl_2$ gas chemistry 에 첨 가 가스로 $N_2$와 Ar을 첨 가할 경 우 텅 스텐 박막과 하부 layer 간의 etch selectivity 증가는 관찰되지 않았으며, 반면에 첨가 가스로 $O_2$를 사용할 경우, $O_2$의 첨가량이 증가함에 따라 etch s selectivity 는 계속적으로 증가렴을 관찰할 수 있었다. 이는 $O_2$ 첨가에 따라 형성되는 WOF4 에 의한 텅스텐의 etch rates 의 감소에 비하여, $Si0_2$ 등의 형성에 의한 poly-Si etch rates 이 더욱 크게 감소하였기 때문으로 사료된다. W 과 poly-Si 의 식각 특성을 이해하기 위하여 X -ray photoelectron spectroscopy (XPS)를 사용하였으며, 식각 전후의 etch depth 를 측정하기 위하여 stylus p pmfilometeT 를 이용하였다.

• Journal of the Korean Ceramic Society
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• v.22 no.6
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• pp.58-70
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• 1985

The bond strength of metal to ceramic sealing in Mo-Mn metallizing was investigated by examining the effects of flux composition in alumina ceramics particle size of molybdenum metal powder wet hydrogen atmosphere and temperature in metallizing. The maximum bond strength was obtained when the glass phase filled almost all the microstructural cavities around the interfacial area with few micropores. Such a favorable microstrcutre waas formed and maximum bond strength was observed between 130$0^{\circ}C$. Also the metal to ceramic bond strength was increased using finer molybdenum metal powder than coarse powder. When content of $SiO_2$ in the flux of alumina ceramics was constant metal to ceramic bond strength was improved with increasing the ratio of CaO to MgO in the flux.