• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.292-292
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• 2016

Transition metal dichalcogenides (TMDs) with a two-dimensional layered structure have been considered highly promising materials for next-generation flexible, wearable, stretchable and transparent devices due to their unique physical, electrical and optical properties. Recent studies on TMD devices have focused on developing a suitable doping technique because precise control of the threshold voltage ($V_{TH}$) and the number of tightly-bound trions are required to achieve high performance electronic and optoelectronic devices, respectively. In particular, it is critical to develop an ultra-low level doping technique for the proper design and optimization of TMD-based devices because high level doping (about $10^{12}cm^{-2}$) causes TMD to act as a near-metallic layer. However, it is difficult to apply an ion implantation technique to TMD materials due to crystal damage that occurs during the implantation process. Although safe doping techniques have recently been developed, most of the previous TMD doping techniques presented very high doping levels of ${\sim}10^{12}cm^{-2}$. Recently, low-level n- and p-doping of TMD materials was achieved using cesium carbonate ($Cs_2CO_3$), octadecyltrichlorosilane (OTS), and M-DNA, but further studies are needed to reduce the doping level down to an intrinsic level. Here, we propose a novel DNA-based doping method on $MoS_2$ and $WSe_2$ films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures. The available n-doping range (${\Delta}n$) on the $MoS_2$ by Ln-DNA (DNA functionalized by trivalent Ln ions) is between $6{\times}10^9cm^{-2}$ and $2.6{\times}10^{10}cm^{-2}$, which is even lower than that provided by pristine DNA (${\sim}6.4{\times}10^{10}cm^{-2}$). The p-doping change (${\Delta}p$) on $WSe_2$ by Ln-DNA is adjusted between $-1.0{\times}10^{10}cm^{-2}$ and $-2.4{\times}10^{10}cm^{-2}$. In the case of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions) doping where $Eu^{3+}$ or $Gd^{3+}$ ions were incorporated, a light p-doping phenomenon is observed on $MoS_2$ and $WSe_2$ (respectively, negative ${\Delta}n$ below $-9{\times}10^9cm^{-2}$ and positive ${\Delta}p$ above $1.4{\times}10^{10}cm^{-2}$) because the added $Cu^{2+}$ ions probably reduce the strength of negative charges in Ln-DNA. However, a light n-doping phenomenon (positive ${\Delta}n$ above $10^{10}cm^{-2}$ and negative ${\Delta}p$ below $-1.1{\times}10^{10}cm^{-2}$) occurs in the TMD devices doped by Co-DNA with $Tb^{3+}$ or $Er^{3+}$ ions. A significant (factor of ~5) increase in field-effect mobility is also observed on the $MoS_2$ and $WSe_2$ devices, which are, respectively, doped by $Tb^{3+}$-based Co-DNA (n-doping) and $Gd^{3+}$-based Co-DNA (p-doping), due to the reduction of effective electron and hole barrier heights after the doping. In terms of optoelectronic device performance (photoresponsivity and detectivity), the $Tb^{3+}$ or $Er^{3+}$-Co-DNA (n-doping) and the $Eu^{3+}$ or $Gd^{3+}$-Co-DNA (p-doping) improve the $MoS_2$ and $WSe_2$ photodetectors, respectively.

• Korean Chemical Engineering Research
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• v.60 no.1
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• pp.93-99
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• 2022

With the rapid development of ultra-small and wearable device technology, continuous electricity supply without spatiotemporal limitations for driving electronic devices is required. Accordingly, Triboelectric nanogenerator (TENG), which utilizes static electricity generated by the contact and separation of two different materials, is being used as a means of effectively harvesting various types of energy dispersed without complex processes and designs due to its simple principle. However, to apply the TENG to real life, it is necessary to increase the electrical output. In addition, stable generation of electrical output, as well as increase in electrical output, is a task to be solved for the commercialization of TENG. In this study, we proposed a method to not only improve the output of TENG but also to stably represent the improved output. This was solved by using the contact layer, which is one of the components of TENG, as an electret for improved output and stability. The utilized electret was manufactured by sequentially performing corona charging-thermal annealing-corona charging on the Fluorinated ethylene propylene (FEP) film. Electric charges artificially injected due to corona charging enter a deep trap through the thermal annealing, so an electret that minimizes charge escape was fabricated and used in TENG. The output performance of the manufactured electret was verified by measuring the voltage output of the TENG in vertical contact separation mode, and the electret treated to the corona charging showed an output voltage 12 times higher than that of the pristine FEP film. The time and humidity stability of the electret was confirmed by measuring the output voltage of the TENG after exposing the electret to a general external environment and extreme humidity environment. In addition, it was shown that it can be applied to real-life by operating the LED by applying an electret to the clap-TENG with the motif of clap.

• Korean Chemical Engineering Research
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• v.60 no.2
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• pp.243-248
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• 2022

As the scope of use of portable and wearable electronic devices is expanding, the limitations of heavy and bulky solid-state batteries are being revealed. Given that, it is urgent to develop a small energy harvesting device that can partially share the role of a battery and the utilization of energy sources that are thrown away in daily life is becoming more important. Contact electrification, which generates electricity based on the coupling of the triboelectric effect and electrical induction when the two material surfaces are in contact and separated, can effectively harvest the physical and mechanical energy sources existing in the surrounding environment without going through a complicated intermediate process. Recently, the interest in the harvest and utilization of wind energy is growing since the wind is an infinitely ecofriendly energy source among the various environmental energy sources that exist in human surroundings. In this study, the optimization of the energy harvesting device for the effective harvest of wind energy based on the contact electrification was analyzed and then, the utilization strategy to maximize the utilization of the generated electricity was investigated. Natural wind based Fluttering TENG (NF-TENG) using fluttering film was developed, and design optimization was conducted. Moreover, the safe high voltage generation system was developed and a plan for application in the field requiring high voltage was proposed by highlighting the unique characteristics of TENG that generates low current and high voltage. In this respect, the result of this study demonstrates that a portable energy harvesting device based on the contact electrification shows great potential as a strategy to harvest wind energy thrown away in daily life and use it widely in fields requiring high voltage.