• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.438-438
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• 2011

White light-emitting diodes (LEDs), the so-called next-generation solid-state lighting, offer benefits in terms of reliability, energy-saving, maintenance, safety, lead-free, and eco-friendly. Recently, rare-earth-doped oxynitride or nitride compounds have attracted a great deal of interest as a photoluminescent material because of their unique luminescent property, especially for white LEDs applications. Ce doped ${\beta}$-SiAlON has been studied as a wavelength conversion phosphor in white LEDs thanks to its high absorption rates, high quantum efficiency, and excellent thermal stability. Previously researches were not enough to understand the detail mechanism and characteristics of ${\beta}$-SiALON. The bandgap structures and electronic structures were not exact due to limitation of calculation methods. In this study, to elucidate the Ce doping effect on the SiAlON system, accurate band structures and electronic structure of the Ce doped ${\beta}$-SiAlON was intensively investigated using density functional theory calculations. In order to get a better description of the band gaps, MBJLDA method were used. We have found a single Ce atom site in ${\beta}$-SiAlON super cell. Furthermore, the density of state, band structure and lattice constant were intensively investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.320-320
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• 2014

Amorphous silicon alloy (a-Si) solar cells and modules have been receiving a great deal of attention as a low-cost alternate energy source for large-scale terrestrial applications. Key to the achievement of high-efficiency solar cells using the multi-junction approach is the development of high quality, low band-gap materials which can capture the low-energy photons of the solar spectrum. Several cell designs have been reported in the past where grading or buffer layers have been incorporated at the junction interface to reduce carrier recombination near the junction. We have investigated profiling the composition of the a-SiGe alloy throughout the bulk of the intrinsic material so as to have a built-in electrical field in a substantial portion of the intrinsic material. As a result, the band gap mismatch between a-Si:H and $a-Si_{1-x}Ge_x:H$ creates a barrier for carrier transport. Previous reports have proposed a graded band gap structure in the absorber layer not only effectively increases the short wavelength absorption near the p/i interface, but also enhances the hole transport near the i-n interface. Here, we modulated the GeH4 flow rate to control the band gap to be graded from 1.75 eV (a-Si:H) to 1.55 eV ($a-Si_{1-x}Ge_x:H$). The band structure in the absorber layer thus became like a U-shape in which the lowest band gap was located in the middle of the i-layer. Incorporation of this structure in the middle and top cell of the triple-cell configuration is expected to increase the conversion efficiency further.

• Journal of the Optical Society of Korea
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• v.19 no.1
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• pp.7-12
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• 2015

Up to ${\sim}520{\mu}J$ broadband mid-infrared (IR) supercontinuum (SC) generation in telecommunication multimode fiber (MMF) directly pumped by a $2.054{\mu}m$ nanosecond Q-switched Tm, $Ho:YVO_4$ laser is demonstrated. An average output power of 3.64 W is obtained in the band of ~1900 to ~2600 nm, and the corresponding optic-to-optic conversion efficiency is 67% by considering the coupling efficiency. The spectrum has extremely high flatness with negligible intensity variation (<2%) in the wavelength interval of ~2070 to ~2475 nm. The SC long-wavelength edge is limited by the silicon glass material loss, and by optimizing the MMF length, the SC spectrum could extend out to ${\sim}2.6{\mu}m$. The output SC pulse shapes are measured at different output powers, and no splits are found. The SC laser beam is nearly diffraction limited with an $M^2=1.15$ in $2.1{\mu}m$ measured by the traveling knife-edge method, and the laser beam spot is monitored by an infrared vidicon camera.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.88.2-88.2
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• 2010

Dye-sensitized solar cells (DSSCs) have attracted considerable attention on account of their high solar energy-to-conversion efficiencies and low cost processes compared to conventional p-n junction solar cells. The mechanism of DSSC is based on the injection of electrons from the photo excited dyes into the conduction band of the semiconductor electrode. The oxidized dye is reduced by the hole injection into either the hole conductor or the electrolyte. Thus, the light harvesting effect of dye plays an important role in capturing the photons and generating the electron/hole pair, as well as transferring them to the interface of the semiconductor and the electrolyte, respectively. We used the organic fluorescence materials which can absorb short wavelength light and emit longer wavelength region where dye sensitize effectively. In this work, the DSSCs were fabricated with fluorescence materials added $TiO_2$ photo-electrode which were sensitized with metal-free organic dyes. The photovoltaic performances of fluorescence aided DSSCs were compared, and the recombination dark current curves and the incident photon-to-current (IPCE) efficiencies were measured in order to characterize the effects of the additional light harvesting effect in DSSC. Electro-optical measurements were also used to optimize the fluorescence material contents on TiO2 photo-electrode surface for higher conversion efficiency (${\eta}$), fill factor (FF), open-circuit voltage (VOC) and short-circuit current (ISC). The enhanced light harvesting effect by the judicious choice/design of the fluorescence materials and sensitizing dyes permits the enhancement of photovoltaic performance of DSSC.

• Journal of IKEEE
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• v.24 no.1
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• pp.368-371
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• 2020

In this paper, we propose a linear tapered slot rectifying antenna for a portable UHF-band RFID system. Since the proposed rectifying antenna does not use a dielectric substrate, the planar antenna is implemented with a thin metal thickness. The rectifier circuit converts input RF power into output DC voltage using a voltage doubler circuit based on two anti-parallel schottky diodes. The rectifying antenna is integrated by the voltage doubler circuit into a linear tapered slot antenna. For conjugate impedance matching of the rectifying circuit and the linear tapered slot antenna, the source-pull method was utilized by adjusting the angle of the tapered slot and the length of the antenna feed line. The proposed antenna prototype has been verified with the electrical and radiation characteristics through RF-DC conversion and far-field radiation test in open space measurement environment. Finally, the proposed antenna is realized to 0.23-wavelength (75 mm) and 0.18-wavelength (60 mm) at 915 MHz center frequency.

• Journal of the Korean Ceramic Society
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• v.32 no.11
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• pp.1262-1268
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• 1995

Photoelectrochemical properties of p-GaAs electrode have been investigated. I-V characteristic shows that the cathodic photocurrent is observed at -0.7 V vs. SCE. The photoresponse at near 870~880nm wavelength indicates that the photogenerated carriers contibuted to the observed current. The maximum converson efficiency of 35% is obtained for a Xe lamp light source at 400nm. In C-V relation, capacitance peaks appeared at the frequencies of 100Hz and 300Hz due to the activation of the interfacial states which exist at the energy level corresponding to the one-third of the GaAs band gap. The difference of about 1.1V between flatband potential (Vfb) from the Mott-Schottky method and onset voltage from I-V curve is observed due to the trap of carriers at the interfacial states in the boundary between GaAs and electrolyte. In case of WO3 deposited p-GaAs electrode, higher positive onset current and photocurent density are obtained. This can be explained by the fact that carriers are generated by light penetrated into the WO3 thin flm as well as p-GaAs substrate and then move into the electrolyte effectively.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.120.2-120.2
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• 2011

The improvement of solar energy-to-electricity conversion efficiency has continued to be an important research area of dye-sensitized solar cells (DSSCs). The mechanism of DSSCs is based on the injection of electrons from the photoexcited dye into the conduction band of nanocrystalline TiO2 or ZnO. Thus, the electronic structures, such as HOMO, LUMO, and HOMO-LUMO band gaps of dye moleculed in DSSC are deeply related to the electron transfer by photoexcitation and redox potential. Organic dyes, because of their many advantages, such as high molar extinction coefficients, convenience of customized molecular design for desired photophysical and photochemical properties, inexpensiveness with no transition metals contained, and environment-friendliness, are suitable as photosensitizers for DSSC. We believe that practically useful organic dye photosensitizers can be produced by exploiting electron donor/acceptor system with proper length of ${\pi}$-conjugation in a chromophore to control the absorption wavelength and enhance the photovoltaic performance. In this research, We designed and synthesized organic dyes also investigated the photoelectrochemical properties of a series of ionic dyes in DSSCs.

• Bulletin of the Korean Chemical Society
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• v.18 no.6
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• pp.608-612
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• 1997

The preparation and photoluminescence properties of $ZnGa_2O_4$ : Mn phosphor are presented. Under 254 nm excitation $Zn_1-_xMn_xGa_2O_4$ exhibits the green emission band at 506 nm wavelength and maximum intensity where x=0.005. The manganese activated $ZnGa_2O_4$ phosphor prepared by the polymerized complex method shows a remarkable increase in the emission intensity and is smaller particle size than that prepared by conventional method. Also, electron paramagnetic resonance study on $ZnGa_2O_4$ : Mn powders indicates that the increase in emission intensity after firing treatment in mild hydrogen reducing atmosphere is due to the conversion of the higher valent manganese to $Mn^{2+}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.247.1-247.1
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• 2016

Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, ZnO/ZnTe:Cr and ZnO/i-ZnTe structures were fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 10 J/cm2. The base pressure of the chamber was kept at approximately $4{\times}10-7Torr$. ZnTe:Cr and i-ZnTe thin films with thickness of 210 nm were grown on p-Si substrate, respectively, and then ZnO thin films with thickness of 150 nm were grown on ZnTe:Cr layer under oxygen partial pressure of 3 mTorr. Growth temperature of all the films was set to $250^{\circ}C$. For fabricating ZnO/i-ZnTe and ZnO/ZnTe:Cr solar cells, indium metal and Ti/Au grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. From the fabricated ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cell, dark currents were measured by using Keithley 2600. Solar cell parameters were obtained under Air Mass 1.5 Global solar simulator with an irradiation intensity of 100 mW/cm2, and then the photoelectric conversion efficiency values of ZnO/ZnTe:Cr and ZnO/i-ZnTe solar cells were measured at 1.5 % and 0.3 %, respectively.

• Current Optics and Photonics
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• v.5 no.4
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• pp.458-465
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• 2021

Borate nonlinear optical crystals have been used as frequency conversion devices in many fields due to their unique transparency and nonlinearity from ultraviolet to visible spectral range. In this study, we theoretically and numerically investigate the properties of broadband second harmonic generation (SHG) in the recently reported Pna2₁-Ba₃Mg₃(BO₃)₃F₃ (BMBF) crystal. The technique is based on the simultaneous achievement of birefringence phase matching and group velocity matching between interacting waves. We discussed all factors required for broadband SHG in the BMBF in terms of two types of phase matching and group velocity matching conditions, the beam propagation direction and the corresponding effective nonlinearity and spatial walk-off, and the spectral responses. The results show that bandwidths calculated in the broadband SHG scheme are 220.90 nm (for Type I) and 165.85 nm (for Type II) in full-width-half-maximum (FWHM). The central wavelength in each case is 2047.76 nm for Type I and 1828.66 nm for Type II at room temperature. The results were compared with the non-broadband scheme at the telecom C-band.