• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.79-80
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• 2005

In this paper, the circuit models of optical to electrical(O/E) characteristics of waveguide photodiode(WGPD) submodule are examined. Test structures of WGPD and WGPD submodule were fabricated and S21 parameter was measured to characterize the O/E conversion property. Valid circuit models were derived by RF circuit simulation and O/E characteristics were modeled to analyze the effects of model parameters on the WGPD submodule performances. Based on the results, it can be concluded that the suggested WGPD submodule model can explain the characteristics of the O/E conversion of WGPD submodule, where the parasitic components originated from ribbon bonding block crucially influence on the performance of WGPD submodule, are able to show more efficient property by making compact bonding structure. We propose an effective WGPD submodule bonding structure and it can ensure the 40Gbps operation of WGPD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.13-16
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• 2004

The reliability of 1.550m-wavelength InGaAs mesa waveguide photodiodes(WGPDs), which developed for 40-Gbps optical receiver applications, fabricated by metal organic chemical vapor deposition is investigated. Reliability is examined by both high-temperature storage tests and the accelerated life tests by monitoring dark current and breakdown voltage. The median device lifetime and the activation energy of the degradation mechanism are computed for WGPD test structures. From the accelerated life test results, the activation energy of the degradation mechanism and median lifetime of these devices in room temperature are extracted from the log-normal failure model by using average lifetime and the standard deviation of that lifetime in each test temperature. It is found that the WGPD structure yields devices with the median lifetime of much longer than $10^6$ h at practical use conditions. Consequently, this WGPD structure has sufficient characteristics for practical 40-Gbps optical receiver modules.

• ETRI Journal
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• v.27 no.5
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• pp.484-490
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• 2005

We fabricated 40 Gb/s front-end optical receivers using spot-size converter integrated waveguide photodiodes (SSC-WGPDs). The fabricated SSC-WGPD chips showed a high responsivity of approximately 0.8 A/W and a 3 dB bandwidth of approximately 40 GHz. A selective wet-etching method was first adopted to realize the required width and depth of a tapered waveguide. Two types of electrical pre-amplifier chips were used in our study. One has higher gain and the other has a broader bandwidth. The 3 dB bandwidths of the higher gain and broader bandwidth modules were about 32 and 42 GHz, respectively. Clear 40 Gb/s non-return-to-zero (NRZ) eye diagrams showed good system applicability of these modules.