• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.10 s.113
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• pp.967-975
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• 2006

In this paper, design and implementation of a very compact and cost effective front-end module are presented for IEEE 802.16 FWA(fixed Wireless Access) in the 40 GHz band. A multi-layer LTCC(Low Temperature Co-fred Ceramic) technology with cavity process to achieve excellent electrical performances is used to fabricate the front-end module. The wirebond matching circuit design of switch input/output port and waveguide transition to connect antenna are optimally designed to keep transmission loss low. To reduce the size of the front-end module, the dielectric waveguide filter is developed instead of the metal waveguide filter. The LTCC is composed of 6 layers(with the thickness of a layer of 100 um) having a relative dielectric constant of 7.1. The front-end module is implemented in a volume of $30{\times}7{\times}0.8mm^3$ and shows an overall insertion loss < 5.3 dB, and image rejection value > 49 dB.

• Journal of the Korean Institute of Telematics and Electronics
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• v.12 no.6
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• pp.1-4
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• 1975

This paper dells with the impedance variations of the IMPATT diode depending upon the small a.c. coomponent superimposed on the d.c. bias. The frequency deviation of the modulated wave is measured using a carrier null method on microwave spectrum analyser. Frequency modulation is achieved by the weack a.c. signal superimposed on the d.c. bias. The bandwidth rapidly increase with increasing modulation signal magnitude for constant modulation frquency and slightly decrease with decreasing modulation frequency for constant modulation signal magnitude.

• ETRI Journal
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• v.38 no.1
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• pp.9-17
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• 2016

We demonstrate a time- and wavelength-division multiplexed passive optical network system employing a vertical-cavity surface-emitting laser array-based optical line terminal transceiver and a tunable bidirectional optical subassembly-based optical network terminal transceiver. A packet error-free operation is achieved after a 40 km single-mode fiber bidirectional transmission. We also discuss an arrayed waveguide grating, a photo detector array based on complementary metal-oxide-semiconductor photonics technologies, and low-cost key devices for deployment in access networks.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.12
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• pp.1198-1204
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• 2013

As a microwave near field probe for near field scanning optical microscope(NSOM) system, H-shaped(ridge type) small aperture is proposed and its performances from the viewpoints of the transmission efficiency(transmission cross section) and spatial confinement(beam spot size) are compared with those of the previous narrow rectangular aperture type. While the transmission efficiencies are comparable to each other for the two structures, the transmitted beam spot size for the proposed H-shaped aperture is much smaller than that for the previous rectangular aperture. This strong point of the H-shaped aperture is expected to significantly improve near-field optical applications such as optical data storage, nanolithography and nanomicroscopy. It is also observed that the transmission efficiency can be improved if the coupling aperture is implemented in the type of the transmission cavity.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.8
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• pp.17-23
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• 2008

We have investigated the properties of the novel rectangular ring lasers containing active and passive regions in a InP material system. The rectangular ring laser consists of four low loss total internal reflection mirrors and a directional coupler made out of passive three waveguide. Two different lasers haying active lengths of 250 and $350{\mu}m$ and total cavity lengths of 580 and $780{\mu}m$ are fabricated, respectively. For both devices lasing thresholds of 38 mA is obtained at room temperature and under continuous wave operation. Lasing is predominantly single mode with the side mode suppression ratio better than 20 dB.

• Journal of the Korean Vacuum Society
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• v.19 no.6
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• pp.467-474
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• 2010

Packet propagation and absorption for the 28 GHz superconducting ECRIS under developing by KBSI Pusan center is analyzed with limited parameter range. The microwave power generated by 28 GHz gyrotron is axially injected to the plasma cavity through waveguide system. According to the analytical ray tracing calculation, the wave packet launched quasi-longitudinally at a high magnetic field side changes its direction from outward to inward as it is approaching resonance layer. Therefore, initially diverging wave does not likely hit a conducting surface before absorbing by electron cyclotron resonance. Also, absorption by plasma with moderate electron density is so strong that reflection by an extraction plate may not be expected.

• Applied Science and Convergence Technology
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• v.26 no.4
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• pp.79-85
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• 2017

The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of $950^{\circ}C$ and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crack-free and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the $4{\mu}m$ -thick $Al_{0.2}Ga_{0.8}N$ was crack-free over entire 2-inch wafer. The dislocation density of $Al_{0.2}Ga_{0.8}N$ was as low as ${\sim}7.6{\times}10^8/cm^2$ measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with $5{\mu}m-wide$ and $700{\mu}m-long$ cavity for electrical properties. The turn on voltage was below 5 V and the resistance was ${\sim}55{\Omega}$ at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.