• 조명전기설비학회논문지
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• 제22권6호
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• pp.148-155
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• 2008

본 논문에서는 웨이퍼 에지 노광장비에 핵심 부분인 웨이퍼의 편심오차의 측정알고리즘과 플랫/노치의 방향을 해석하는 알고리즘을 제안하였다. 또한 새로 제안된 알고리즘을 전산 시뮬레이션을 통해 그 유효성을 확인하였으며 제작된 웨이퍼 에지 노광기에 적용하여 실제 장비에 적용 가능함을 확인하였다. 제안된 알고리즘을 위해 필요한 웨이퍼 에지 위치 검출방식에 있어 과거의 접촉식 방법을 사용함으로서 발생하는 파티클의 오염을 제거하기 위해 선형 CCD 센서를 적용한 비접촉 방식의 데이터 측정법을 적용함으로서 파티클의 오염을 제어 할 수 있었다.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2002년도 ICCAS
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• pp.55.4-55
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• 2002

In the semiconductor fabrication, particle contamination is wide-spread and one of major causes to yield loss. Extensive testing has revealed that even careful handling of wafers during processing may cause photo-resist materials to flake off wafer edges. So, to remove the photo-resist at the outer 5mm of wafers, UV(Ultraviolet) rays are exposed. WEE (Wafer Edge Exposure) process station is the system that exposes the wafer edge as prespecified by controlling the positioning mechanism and maintaining the light intensity level In this work, WEE process station has been designed so as to significantly lower the amount of particle contamination which occurs even during the most r...

• 전자공학회논문지A
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• 제31A권7호
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• pp.69-75
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• 1994

A very fine pattern formation process using double exposure is investigated, which can overcome the resolution limit of optical wafer stepper. The very fine pattern can be obtained by moving the edge profile of large pattern by means of moving the stepper stage. The simulation results show that the light transmittance decrease bellow 9%, and the contrast increase to 16.6% for the 0.3$\mu$m photoresist pattern exposeed by the double exposure using i-line wafer stepper. And the experimental results show that fine photoresist pattern as short as 0.2$\mu$m can be obtained without a loss of photoresist thickness. Also, it proves that the depth of focus for 0.3$\mu$m pattern is longer than $1.5\mu$m. And, the very fine negative photoresist pattern was formmed by using the double exposure technique and the image reversal process.

• 센서학회지
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• 제28권4호
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• pp.251-255
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• 2019

We propose a two-step lithography process to minimize edge-bead issues caused by thick photoresist (PR) coating. In the conventional PR process, the edge bead can be efficiently removed by applying an edge-bead removal (EBR) process while rotating the silicon wafer at a high speed. However, applying conventional EBR to the production of desired PR mold with unique negative patterns cannot be used because a lower rpm of spin coating and a lower temperature in the soft bake process are required. To overcome this problem, a two-step lithography process was developed in this study and applied to the fabrication of a polydimethylsiloxane (PDMS) film having super-hydrophobic characteristics. Following UV exposure with a first photomask, the exposed part of the silicon wafer was selectively removed by applying a PR developer while rotating at a low rpm. Then, unique PR mold structures were prepared by employing an additional under-exposure process with a second mask, and the mold patterns were transferred to the PDMS. Results showed that the fabricated PDMS film based on the two-step lithography process reduced the height difference from 23% to 5%. In addition, the water contact angle was greatly improved by spraying of hydrophobic nanosilica on the dual-scaled PDMS surface.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 추계학술대회 논문요약집
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• pp.141-141
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• 2003