• 한국표면공학회지
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• 제32권3호
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• pp.239-243
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• 1999

At Present, 200mm wafer technology is being applied for commercial fabrications of 64, 128, and 256 M DRAM devices, and 300mm technology will be evolved for 1G DRAM devices in the early 21th century, recognizing limitations of several process technologies. In particular recognition has been realized in harmful effects of surface contamination of trace metals introduced during devicing processes. Such a guide line for surface metal contamination has been proposed as 1E9 and 1E10 atoms/$\textrm{cm}^2$ of individual metal contamination for wafering and devicing of 1G DRAM, respectively, and so its measurement limit should be at least 1E8 atoms/$\textrm{cm}^2$. The detection limit of present measurement systems is 2E9 atoms/$\textrm{cm}^2$ obtainable with TRXFA(Total Reflection X-Ray Fluorescence Analysis). TRXFA is nondestructive and the simplest in terms of operation, and it maps the whole wafer surfaces but needs detection improvement. X-Ray intensity produced with synchrotron accelerator is much higher than that of conventional X-ray sources by order of 4-5 magnitudes. Hence theoretically its reactivity with silicon surfaces is expected to be much higher than the conventional one, realizing improvement of detection limit. X-ray produced with synchrotron accelerator is illuminated at a very low angle with silicon wafer surfaces such as 0.1 degree and reflects totally. Hence informations only from surface can be collected and utilized without overlapping with bulk informations. This study shows the total reflection phenomenon and quantitative improvement of detection limit for metallic contamination. It is confirmed that synchrotron X-ray can be a very promising alternative for realizing improvement of detection limit for the next generation devices.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.34.2-34.2
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• 2011

The demand for Ru has been increasing in the electronic, chemical and semiconductor industry. Chemical mechanical planarization (CMP) is one of the fabrication processes for electrode formation and barrier layer removal. The abrasive particles can be easily contaminated on the top surface during the CMP process. This can induce adverse effects on subsequent patterning and film deposition processes. In this study, a post Ru CMP cleaning solution was formulated by using sodium periodate as an etchant and citric acid to modify the zeta potential of alumina particles and Ru surfaces. Ru film (150 nm thickness) was deposited on tetraethylorthosilicate (TEOS) films by the atomic layer deposition method. Ru wafers were cut into $2.0{\times}2.0$ cm pieces for the surface analysis and used for estimating PRE. A laser zeta potential analyzer (LEZA-600, Otsuka Electronics Co., Japan) was used to obtain the zeta potentials of alumina particles and the Ru surface. A contact angle analyzer (Phoenix 300, SEO, Korea) was used to measure the contact angle of the Ru surface. The adhesion force between an alumina particle and Ru wafer surface was measured by an atomic force microscope (AFM, XE-100, Park Systems, Korea). In a solution with citric acid, the zeta potential of the alumina surface was changed to a negative value due to the adsorption of negative citrate ions. However, the hydrous Ru oxide, which has positive surface charge, could be formed on Ru surface in citric acid solution at pH 6 and 8. At pH 6 and 8, relatively low particle removal efficiency was observed in citric acid solution due to the attractive force between the Ru surface and particles. At pH 10, the lowest adhesion force and highest cleaning efficiency were measured due to the repulsive force between the contaminated alumina particle and the Ru surface. The highest PRE was achieved in citric acid solution with NaIO4 below 0.01 M at pH 10.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 추계기술심포지움논문집
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• pp.115-121
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• 2002

In this research we have investigated the characteristics of ultra thin $HfO_2 /SiON$stack structure films using several analytical techniques. SiON layer was thermally grown on standard SCI cleaned silicon wafer at $825^{\circ}C$ for 12sec under $N_2$O ambient. $HfO_2 /SiON$$_4$/$H_2O$ as precursors and $N_2$as a carrier/purge gas. Solid HfCl$_4$was volatilized in a canister kept at $200^{\circ}C$ and carried into the reaction chamber with pure $N_2$carrier gas. $H_2O$ canister was kept at $12^{\circ}C$ and carrier gas was not used. The films were grown on 8-inch (100) p-type Silicon wafer at the $300^{\circ}C$ temperature after standard SCI cleaning, Spectroscopic ellipsometer and TEM were used to investigate the initial growth mechanism, microstructure and thickness. The electrical properties of the film were measured and compared with the physical/chemical properties. The effects of heat treatment was discussed.

• 한국산학기술학회논문지
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• 제16권8호
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• pp.5541-5549
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• 2015

본 논문은 반도체 웨이퍼 공정 배기가스 수분제어장치에 적용하기 위하여 인덕션 히터를 사용해서 안전하고 효율적인 전력을 사용하는 히터에 대한 설계방법을 제안한다. 수분을 제거하기 위해서 질소 가스의 흡열 반응을 발생하는 필라멘트 히터를 이용하여 배기가스 제거 시스템이 만들어진다. 이론적인 최적화와 전기적인 구현을 통해서 인덕션 이론은 반도체 웨이퍼 공정 배기가스 시스템을 위한 인덕션 히터 설계과정에 적용되어진다. 제안한 인덕션 히터 설계는 에너지 측면에서 비효율적이고 신뢰성이 떨어지며 안전하지 못한 현재의 설계문제에 대한 해결책을 제시한다. 인덕션 히터의 강인성과 미세조정 설계기법이 질소 히터의 사양내에서 에너지 소모를 최적화한다. 최적화는 배기 파이프의 공진주파수에 의해서 특성화된 ZVS(Zero Voltage Switching)를 기초로 이루어진다. 시스템에서 끼어진 고장 안전(fail-safe) 에너지 리미터는 MOSFET의 궤환 제어를 통하여 전압 레귤레이터를 사용하고 N2 히터 유닛의 사양이내에서 작동하기 위한 성능을 만족하도록 한다. 수치 해석과 설계의 우수성을 위한 기존의 필라멘트 히터와 미세조정한 인덕션 히터 설계의 사양과 성능비교는 제안한 인덕션 히터 설계방법이 우수함을 보여준다.

• 청정기술
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• 제6권1호
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• pp.79-84
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• 2000

반도체 세정공정에서 사용되는 화학약품의 소모량을 줄이기 위하여 소량의 전해질 혹은 초순수만을 전기분해 시켜 생성되는 전리수를 이용하여 금속 불순물들이 오염된 실리콘 웨이퍼를 습식세정을 하였다. 전리수는 다양한 범위의 pH 및 산화환원전위(oxidation-reduction potential, ORP)를 형성할 수 있으며, 전리수의 양극수는 pH 및 산화환원전위를 각각 4.7 및 +1000mV의 산화성 수용액을, 전리수의 음극수는 pH 및 산화환원전위가 각각 6.3 및 -550mV를 40분 이상 유지하고 있었다. 실리콘 웨이퍼 세정 전과 후의 금속 불순물 측정은 ICP-MS(Inductively coupled plasma spectroscopy)를 사용하였다. 전리수 가운데 양극수는 구리 불순물 제거에, 음극수는 철 불순물 제거에 효과적임을 확인하였다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2003년도 춘계전력전자학술대회 논문집(1)
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• pp.260-263
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• 2003

When ICP(Inductive Coupled Plasma type etching and wafer manufacturing is being processed in semiconductor process, a noxious gas in PFC and CFC system is generated. Gas cleaning dry scrubber is to remove this noxious gas. This paper describes a power source device, 2MHz switching frequency class 2kW RF Generator, used as a main power source of the gas cleaning dry scrubber. The power stage of DC/DC converter is consist of full bridge type converter with 100kHz switching frequency Power amplifier is push pull type inverter with 2MHz switching frequency, and transmission line transformer. The adequacy of the circuit type and the reliability of generating plasma in various load conditions are verified through 50$\Omega$ dummy load and chamber experiments result.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.168-168
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• 2009

고효율 실리콘 이종접합 태양전지 제작을 위한 요소기술 중 a-Si:H/c-Si 간의 계면 안정화는 태양전지 효율에 중요한 역할을 한다. 본 연구에서는 n-type 결정질 실리콘 기판을 사용하여, 소수전하들의 재결합을 방지하고, 계면 안정화를 실행하는 방안으로 실리콘 기판 습식 세정을 수행하였다. 반도체 공정에서 일반적으로 알려진 RCA 세정기법에 HF 세정을 마지막공정으로 추가하여 자연 산화막과 기타 불순물을 더욱 효과적으로 제거할 수 있도록 실험을 진행하였다. 마지막 공정으로 추가된 HF 세정에 의한 a-Si:H/c-Si 계면 안정화 효과를 관찰하기 위하여 HF농도와 HF 세정시간에 따른 소수반송자 수명을 측정하였다. 또한 HF 세정 이후 공정의 영향을 확인하기 위하여 PE-CVD법으로 a-Si:H 박막 증착 이전 실리콘 기판의 온도와 상온에서 머무는 시간에 따른 a-Si:H/c-Si 계면안정화 특성을 분석하였다. 본 실험을 통해 HF세정공정이 계면특성에 미치는 영향을 확인하였으며 실리콘 기판 습식 세정이 이종접합태양전지 특성에 미치는 영향을 분석하였다.

• 연구논문집
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• 통권33호
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• pp.99-109
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• 2003

Recently the utilization of the ozone dissolved de-ionized water(DIW-$O_3$) in semiconductor wet cleaning process and photoresist stripping process to replace the conventional sulfuric acid and hydro peroxide mixture(SPM) method has been studied. In this paper, we propose the water-electrode type ozone generator which has the characteristics of the high concentration and purity to produce the high concentration DIW-$O_3$ for the photoresist strip process in the semiconductor fabrication. The proposed ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. Through this study, we obtained the results of the 10.3 wt% of ozone gas concentration at the oxygen gas of 0.5 [liter/min.] and the DIW-$O_3$ concentration of 79.5 ppm.. Through the photoresist stripping test using the produced DIW-$O_3$, we confirmed that the photoresist coated on the silicon wafer was removed effectively in the 12 minutes.

• 한국표면공학회지
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• 제31권2호
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• pp.117-126
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• 1998

In this study, the residue remaining on the silicon wafer during the oxide overetching using $C_4F_8/H_2$ helicon were plasmas and effects of various cleaning and annealing methods on the removal of the remaining residue were investigated. The addition of 30%$H_2$ to the C4F8 plasma increased the C/F ratio and the thickness of the residue on the etched silicon surface. Most of the residuse on the etched surfaces colud be removed by the oxygen plasmsa cleaning followed by thermal annealing over $450^{\circ}C$. Hydrogen-coataining residue formed on the silicon by 70%$C_4F_8/30%H_2$ helicon plasmas was more easily removed than hydrogen-free residue formed residue formed by $C_4F_8$ helicon wear plasmas. However, damage remaining on the silicon surface overetched using 70%$C_4F_8/30%H_2$ helicon plasmas was intensive and the degree of reocvery duing the post-annealing was lower.

• 한국재료학회지
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• 제6권4호
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• pp.395-400
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• 1996

반도체 소자가 점점 고집적회되고 고성능화되면서 Si 기판 세정 방법은 그 중요성이 더욱 더 커지고 있다. 특히 ULSI급 소자에서는 세정 방법이 소자 생산수율 및 신뢰성에 큰 영향을 끼치고 있다. 본 연구에서는 HF-last 세정에 UV/O3과 SC-1 세정을 삽입하여 그 영향을 관찰하였다. 세정 방법은 HF-last 세정을 기본으로 split 1(piranha+HF), split 2(piranha+UV/O3+HF), split 3(piraha+SC-1+HF), split 4(piranha+(UV/O3+HF) x3회 반복)의 4가지 세정 방법으로 나누어 실험하였다. 세정을 마친 Si 기판은 Total X-Ray Fluorescence Spectroscopy(AFM)을 사용하여 표면거칠기를 측정하였다. 또한 세정류량을 측정하고, Atomic Force Microscopy(AFM)을 사용하여 표면거칠기를 측정하였다. 또한 세정후 250$\AA$의 gate 산화막을 성장시켜 전기적 특성을 측정하였다. UV/O3을 삽입한 split 2와 split 4세정방법이 물리적, 전기적 특성에서 우수한 특성을 나타냈고, SC-1을 삽입한 split 3세정 방법이 표준세정인 split 1세정 방법보다 우수하지 못한 결과를 나타냈다.