• 센서학회지
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• 제23권5호
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• pp.291-294
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• 2014

In this study, a chemiresistive sensor based on one-dimensional $WO_3$ nanostructures is presented for application in non-invasive medical diagnostics. $WO_3$ nanostructures were used as an active gas sensing layer and were deposited onto a $SiO_2/Si$substrate using Pt interdigitated electrodes (IDEs). The IDE spacing was $5{\mu}m$ and deposition was performed using RF sputter with glancing angle deposition mode. Pt IDEs fabricated by photolithography and dry etching. In comparison with thin film sensor, sensing performance of nanostructure sensor showed an enhanced response of more than 20 times when exposed to 50 ppm acetone at $400^{\circ}C$. Such a remarkable faster response can pave the way for a new generation of exhaled breath analyzers based on chemiresistive sensors which are less expensive, more reliable, and less complicated to be manufactured. Moreover, presented sensor technology has the potential of being used as a personalized medical diagnostics tool in the near future.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2001년도 추계학술강연 및 발표대회
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• pp.41-41
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• 2001

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.117.1-117
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• 1998

• 한국세라믹학회지
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• 제32권11호
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• pp.1262-1268
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• 1995

Photoelectrochemical properties of p-GaAs electrode have been investigated. I-V characteristic shows that the cathodic photocurrent is observed at -0.7 V vs. SCE. The photoresponse at near 870~880nm wavelength indicates that the photogenerated carriers contibuted to the observed current. The maximum converson efficiency of 35% is obtained for a Xe lamp light source at 400nm. In C-V relation, capacitance peaks appeared at the frequencies of 100Hz and 300Hz due to the activation of the interfacial states which exist at the energy level corresponding to the one-third of the GaAs band gap. The difference of about 1.1V between flatband potential (Vfb) from the Mott-Schottky method and onset voltage from I-V curve is observed due to the trap of carriers at the interfacial states in the boundary between GaAs and electrolyte. In case of WO3 deposited p-GaAs electrode, higher positive onset current and photocurent density are obtained. This can be explained by the fact that carriers are generated by light penetrated into the WO3 thin flm as well as p-GaAs substrate and then move into the electrolyte effectively.

• Bulletin of the Korean Chemical Society
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• 제26권10호
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• pp.1515-1519
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• 2005

Tungsten oxide-modified TiO2 thin films were formed on a glass substrate by sol-gel and dip coating processes using acetyl acetone as a chelating agent. The hydrophilic properties of the thin films were investigated with illumination of UV light. The dependence of water contact angle on material composition and morphology of the film is established with SEM image and AFM profile. The surface morphology was controlled with the change of precursor concentration. 0.01 M of tungsten oxide-modified Ti$O_2$ have shown the highest hydrophilicity after UV-irradiation. The effect of composition on photoinduced hydrophilicity of the W$O_3$-Ti$O_2$ films was also investigated. The films were characterized by XRD, SEM, AFM and XPS.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.65-65
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• 2011

We report the application of conducting metal oxide electrodes for semiconducting metal oxide gas sensors. Pt interdigitated electrodes have been commonly used for metal oxide gas sensor because of the low resistivity, excellent thermal and chemical stability of Pt. However, the high cost of Pt is an obstacle for the wide use of metal oxide gas sensors compared with its counterpart electrochemical gas sensors. Meanwhile, relatively low-cost conducting metal oxides are widely being used for light-emitting diodes, flat panel displays, solar cell and etc. In this work, we have fabricated $WO_3$ and $SnO_2$ thin film gas sensors using interdigitated electrodes of conducting metal oxides. Thin film gas sensors based on conducting metal oxides exhibited superior gas sensing properties than those using Pt interdigitated electrodes. The result was attributed to the low contact resistance between the conducting metal oxide and the sensing material. Consequently, we demonstrated the feasibility of conducting metal oxide interdigitated electrodes for novel gas sensors.

• 한국진공학회지
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• 제8권2호
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• pp.141-147
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• 1999

The electrochromic characteristics of tungsten oxide films are largely affected by deposition conditions, such as substrate temperature and gas flow rate and also post-annealing. We have considered gas flow rate and temperature as important factors having an effect on an electrical, optical phenomenon and structural variation of $WO_3$ . The tungsten oxide films were deposited onto ITO(20$\Omega\box$, 1000$\AA$) using rf magnetron sputtering method. In particular, the films deposited at room temperature were annealed at various temperatures in air. All specimens had crystal structure except one being deposited at room temperature with nearly amorphous-like structure. The specimen deposited at $100^{\circ}C$ had a structure in which the increase in deposition temperature. The specimen deposited at $100^{\circ}C$ had a structure in which the cations$(Li^+)$ are easily movable because of void boundaries induced by regularly arrayed large grains. The specimen deposited at $300^{\circ}C$ had a dense structure with small grains but it exhibited the large mobility and charge density in $WO_3$ because of distinct grain boundaries.

• 태양에너지
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• 제15권3호
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• pp.141-149
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• 1995

텅스텐 산화물 박막이 전자 비임에 의해 실리콘 기판 위에 제작되었다. 여러가지 전해질에 의해 퇴화된 막의 두께와 구조는 후방산란분광, 라만분광, 광전자분광 및 전자현미경에 의해 연구되었다. 텅스텐 산화물 박막은 1몰의 황산 전해질속에서 두께가 가장 많이 용해 되었으며,수분에 의해 촉진된 것을 확인하였다. 그러나 글리세린이 포함된 전해질에 의해서 퇴화된 막의 전자구조는 제작된 막과 비교할 때 변화가 없었다. 막의 퇴화는 두께와 표면 구조변화에도 그 원인이 있음을 보였다.

• 전기전자학회논문지
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• 제23권4호
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• pp.1128-1133
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• 2019

이 논문에서는 전이 금속 산화물(TMO)층으로 구성된 다층 박막을 사용하는 BIPV(Building Integrated Photovoltaic) 시스템용 전면 컬러 유리를 제안하였다. 몰리브덴 산화물(MoO₃) 및 텅스텐 산화물(WO₃)은 굴절률 차이가 큰 계면을 형성하여 적절한 간섭효과를 얻을 수 있다. 단일 Thermal Evaporator 증착 방법을 통해 다층 박막을 제작함으로써 간단하고 빠르며 저렴한 제조 방법을 제안하였다. MoO₃(60nm)/WO₃(100nm) 다층 박막으로 90% 이상의 광 투과율을 갖는 자홍색 유리를 시연하였으며, 이 기술은 상용화된 BIPV 시스템에 유용할 것으로 기대된다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.128-128
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• 2003

Electrochromism (EC) is defined as a phenomenon in which a change in color takes place in the presence of an applied voltage. Because of their low power consumption, high coloration efficiency, EC devices have a variety of potential applications in smart windows, mirror, and optical switching devices. An EC devices generally consist of a transparent conducting layer, electrochromic cathodic and anodic coloring materials and an ion conducting electrolyte. EC has been widely studied in transition metal oxides(e.g., WO$_3$, NiO, V$_2$O$\sub$5/) Among these materials, WO$_3$ is a most interesting material for cathodic coloration materials due to its lush coloration efficiency (CE), large dynamic range, cyclic reversibility, and low cost material. WO$_3$ films have been prepared by a variety of methods including vacuum evaporation, chemical vapor deposition, electrodeposition process, sol-gel synthesis, sputtering, and laser ablation. Sol-gel process is widely used for oxide film at low temperature in atmosphere and requires lower capital investment to deposit large area coating compared to vacuum deposition process.