• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.9
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• pp.1323-1329
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• 2015

The WO₃/Ag/WO₃ transparent thin films are fabricated by the RF magnetron sputtering. This has a transmittance of front and rear about 90% in the visible light range and surface resistance of 6.41Ω/□. In this paper, we analyzed the surface characteristics caused by the working pressure and O₂ plasma surface treatment to apply a transparent electrode that was prepared to the laminated structure with other materials. The working pressure was changed in the WO₃ film to 10mTorr, 7mTorr, and 5mTorr, it showed a lower than roughness of conventional ITO. In addition, by 55.5774 J/m² at 5mTorr, it shows the hydrophobic property with lower process pressure. O₂ plasma surface treatment was changed at the condisions of the RF power to 150W, 100W, and 50W and the process time to 240s, 180s, 120s, and 60s. The surface roughness are the maximum roughness(Rmax) 6.437nm and the average roughness(Rq) 0.827nm at RF power 150W, and the maximum roughness (Rmax) 6.880nm and the average roughness (Rq) 0.839nm at process time 240sec. It showed a lower value than the surface treatment. also about working pressure and process time is increased, it showed the hydrophobic.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.571-574
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• 2009

Metal oxide/metal bilayer structures are explored as contacts with a low injection barrier in organic thin-film transistors (OTFTs) in an effort to realize their true potential for low-cost electronics. OTFTs with a bilayer electrode of $WO_3$ (10nm) and Al shows a saturation mobility as large as 0.97 $cm^2$/Vsec which are comparable to those of Au-based control samples (~0.90 $cm^2$/Vsec). Scaling of contact resistance with respect to the thickness of $WO_3$ layer is also discussed.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.3
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• pp.139-144
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• 2003

A flat type micro gas sensor was fabricated on the p-type silicon wafer with low stress Si$_3$N$_4$, whose thickness is 2 ${\mu}{\textrm}{m}$, using MEMS technology. WO$_3$ thin film as a sensing material for detection of NO$_2$ gas was deposited using a tungsten target by sputtering method, followed by thermal oxidation at several temperatures (40$0^{\circ}C$-$600^{\circ}C$) for one hour. NO$_2$ sensitivities were investigated for the WO$_3$ thin films with different annealing temperatures. The highest sensitivity was obtained for the samples annealed at $600^{\circ}C$ when it was operated at 20$0^{\circ}C$. The results of XRD analysis showed the annealed samples had polycrystalline phase mixed with triclinic and orthorhombic structures. The sample exhibits higher sensitivity when the system has less triclinic structure. The sensitivities, $R_{gas}/R_{air},$ operating at 20$0^{\circ}C$ to 5 ppm NO$_2$ of the sample annealed at $600^{\circ}C$ were approximately 90.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.3
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• pp.705-711
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• 2000

A thin film oxide semiconductor micro gas sensor array which shows only 60 mW of power consumption at an operating temperature of $300^{\circ}C$ has been fabricated using microfabrication and micromachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double-layer structure of $0.1\mum\; thick\; Si_3N_4 \;and\; 1 \mum$ thick phosphosilicate glass (PSG) prepared by low-pressure chemical-vapor deposition (LPCVD) and atmospheric-pressure chemical-vapor deposition (APCVD), respectively. The sensor array consists of such thin film oxide semiconductor sensing materials as 1 wt.% Pd-doped $SnO_2,\; 6 wt.% A1_2O_3-doped\; ZnO,\; WO_3$/ and ZnO. Baseline resistances of the four sensing materials were found to be stable after the aging for three days at $300^{\circ}C$. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.2
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• pp.315-322
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• 2002

A thin film oxide semiconductor micro gas sensor array which shows only 60㎽ of power consumption at an operating temperature of 30$0^{\circ}C$ has been fabricated using microfabrication and rnicrornachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double la! or structure of 0.1${\mu}{\textrm}{m}$ thick Si$_3$N$_4$ and 1${\mu}{\textrm}{m}$ thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric－pressure chemical-vapor deposition(APCVD), respectively. The sensor way consists of such thin film oxide semiconductor sensing materials as 1wt.％ Pd-doped SnO$_2$, 6wt.% AI$_2$O$_3$-doped ZnO, WO$_3$ and ZnO. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials. Heater Part of the sensor structure has been modified in order to improve the process yield of the sensor, and as a result of modified heater structure improved process yield has been achieved.

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.05a
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• pp.26.1-26.1
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• 2006

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.313-316
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• 2004

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics(ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• Journal of the Korean Electrochemical Society
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• v.1 no.1
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• pp.33-39
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• 1998

To AC impedance study was performed in this study on the interfacial reaction between organic electrolyte and amorphous tungsten oxides thin film, cathodically coloring oxide, prepared by e-beam evaporation method in the 1 M $LiClO_4/PC$ organic solution. The electrochemical reactions at the interface were analyzed by the transient method and the complex impedance spectroscopy. The impedance spectrums showed that the electro-chemical intercalation of lithium cations was consisted of the following three steps; the first step, the charge transfer reaction of lithium cation at the interface between amorphous tungsten oxides thin film and the organic electrolyte, the second step, the adsorption of lithium atom on the surface of amorphous tungsten oxides thin film, and then the third step, the absorption and the diffusion of lithium atom into amorphous tungsten oxides thin layer. The bleaching and the coloring characteristics of amorphous tungsten oxides thin film were explained in terms of thermodynamic and kinetic variables, the simulated $R_{ct},\;C_{dl},\;D$ and $\sigma_{Li}$ by CNLS fitting method. Especially it was found that the limiting values of electrochromic reaction were the molar ratio of lithium, y=0.167 and the electrode potential, E=2.245 V (vs. Li).

• Solar Energy
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• v.17 no.4
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• pp.67-74
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• 1997

The electrochromic $WO_3$ thin films were prepared by using the electron beam deposition technique. The influences of vacuum pressure were examined in terms of the surface morphology and the electrochromic properties of films. From the results, the electrochromic behavior of electron beam deposited films strongly depends on the vacuum pressure during deposition. The film prepared under a vacuum pressure of $5{\times}10^4$ mbar was found to be rather stable when subjected to the repeated coloring and bleaching cycles in an aqueous acid electrolyte of 1M $H_2SO_4$. It was also found that the degraded film by repeated cycling in the aqueous acid solution changed the grain shape of film surface.

• Journal of Sensor Science and Technology
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• v.23 no.1
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• pp.15-18
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• 2014

We present gas sensing performance based on $2{\times}2$ sensor array with four different elements ($TiO_2$, $SnO_2$, $WO_3$ and $In_2O_3$ thin films) fabricated by rf sputter. Each thin film was deposited onto the selected $SiO_2$/Si substrate with Pt interdigitated electrodes (IDEs) of $5{\mu}m$ spacing which were fabricated on a $SiO_2$/Si substrate using photolithography and dry etching. For 5 ppm $NO_2$ and 50 ppm CO, each thin film sensor has a different response to offers the distinguishable response pattern for different gas molecules. Compared with the conventional micro-fabrication technology, $2{\times}2$ sensor array with such remarkable response pattern will be open a new foundation for monolithic integration of high-performance chemoresistive sensors with simplicity in fabrication, low cost, high reliablity, and multifunctional smart sensors for environmental monitoring.