• 대한방사선기술학회지:방사선기술과학
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• 제16권1호
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• pp.41-55
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• 1993

Recently, various screen film system have been introduced in diagnostic radiology. There are two kinds of screen film system : blue emitting $CaWO_4$ screen has been largely used in these days. However, it tends to be changed to use green emitting $Gd_2O_2S$ : Tb screen. In this study, photographic characteristics of $CaWO_4$ and $Gd_2O_2S$ : Tb screen were investigated with luminescence, spectroscopy. The morphology of $CaWO_4$ and $Gd_2O_2S$ : Tb were also observed by using scanning electron microscope. The result obtained were as follows : 1. There was small difference in the thickness of phosphor layers for the front and back screen of blue emitting system, but little difference in those of green emitting system. 2. There was no difference in the size of phosphor particles between the front and back screen for each screen. However, the particle size was different for the various kinds of screens. 3. The shape of phosphor particle was round with many faces for all the screens. 4. In the exposure of X-ray with the same intensity, luminescent intensity of a green emitting system was $6{\sim}7$ times larger than that of a blue emitting system. 5. The thickness of phosphor layers does not affect on the sensitivity of the screens exposed by X-ray.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.128-128
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• 2003

Electrochromism (EC) is defined as a phenomenon in which a change in color takes place in the presence of an applied voltage. Because of their low power consumption, high coloration efficiency, EC devices have a variety of potential applications in smart windows, mirror, and optical switching devices. An EC devices generally consist of a transparent conducting layer, electrochromic cathodic and anodic coloring materials and an ion conducting electrolyte. EC has been widely studied in transition metal oxides(e.g., WO$_3$, NiO, V$_2$O$\sub$5/) Among these materials, WO$_3$ is a most interesting material for cathodic coloration materials due to its lush coloration efficiency (CE), large dynamic range, cyclic reversibility, and low cost material. WO$_3$ films have been prepared by a variety of methods including vacuum evaporation, chemical vapor deposition, electrodeposition process, sol-gel synthesis, sputtering, and laser ablation. Sol-gel process is widely used for oxide film at low temperature in atmosphere and requires lower capital investment to deposit large area coating compared to vacuum deposition process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.274-274
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• 2010

안료의 색상은 출발원료의 조성, 입자크기 및 소결온도에 의한 결정구조 등에 의존한다. 본 연구에서는 Rutile구조를 갖는 세라믹안료인 $TiO_2-WO_3$-NiO의 합성에서 소결온도를 결정하기 위해 소결전 출발원료를 습식법에 의하여 Jar Mill에서 0.7-0.9um로 혼합분쇄한 후 $100^{\circ}C$에서 24시간 건조하였다. 건조후 $1100-1280^{\circ}C$에서 5구간을 선정하여 소결한 시료를 Jar Mill에서 0.8-1um로 분쇄한 후, 다시 $100^{\circ}C$에서 24시간 건조하였다. 이렇게 얻어진 시료를 XRD로 상합성 정도를 조사하고, 색상 및 착색력을 spectrophotometer를 분석하였다. 색상은 1150와 $1250^{\circ}C$에서 가장 좋은 Yellow 색상이 관찰되었으며, XRD에 의한 결정성의 분석결과와 비교적 일치하고 있다. Rutile구조를 갖는 세라믹안료의 색상은 소결시의 결정화도에 따라 민감하게 변화되고 있음을 알 수 있다.

• 한국수소및신에너지학회논문집
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• 제27권4호
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• pp.329-334
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• 2016

Hydrogen is eco-friendly alternative energy source and the photoelectrochemical water splitting is believed to be one of the promising methods for hydrogen production. Many researchers have studied several potential photocatalysts to increase the photoelectochemical performance efficiency for hydrogen conversion. In this study, the GO (graphene oxide) was prepared by Tour's method and was dispersed in precursor solutions of $WO_3$ and $BiVO_4$. Those precursor solutions were spin-coated on FTO glass and several photocatalyst thin films of $WO_3$, $BiVO_4$ and $WO_3/BiVO_4$ were prepared by calcination. The morphologies of prepared photocatalyst thin films were measured by scanning electron microscope. The photoelectrochemical performances of photocatalyst thin films with rGO (reduced graphene oxide) and without rGO were analyzed systematically.

• 한국분말재료학회지
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• 제9권2호
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• pp.89-95
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• 2002

Spherical fine powders of tungsten oxide powders were prepared by the emulsion evaporation method. The characteristics of the powders prepared were examined by means of TGA, X-ray diffraction, SEM and image analysis. The emulsions were prepared by fast mixing of aqueous phase containing tugsten and the organic phase which composed of kerosene, surfactant, and paraffin oil. Precursors were made by evaporating the emulsionin the kerosene bath at $160^{\circ}C$, and then calcined at $650^{\circ}C$ in order to produce tungsten oxide powders. The average particle size of the tungsten oxide powders was $0.5\mutextrm{m}$ and their shapes were spherical at the both case of w/o and o/w type emulsions. As the HLB value of the surfactant increased and the concentration of tungsten ions decreased the mean particle siqe of tungsten oxide powders decreased whereas agglomerationsize increased. The optimum concentration of Span 80 was 8 percent by volume, and the optimum stirring speed in the emulsion formation was 5000 rpm in order to obtain fine and well dispersed $WO_3$ powders.

• 한국분말재료학회지
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• 제19권4호
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• pp.259-263
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• 2012

Dependence of the freeze-drying process condition on microstructure of porous W and pore formation mechanism were studied. Camphene slurries with $WO_3$ contents of 10 vol% were prepared by milling at $50^{\circ}C$ with a small amount of dispersant. Freezing of a slurry was done in Teflon cylinder attached to a copper bottom plate cooled at $-25^{\circ}C$. Pores were generated subsequently by sublimation of the camphene during drying in air for 48 h. The green body was hydrogen-reduced at $800^{\circ}C$ for 30 min, and sintered in the furnace at $900^{\circ}C$ for 1 h. After heat treatment in hydrogen atmosphere, $WO_3$ powders were completely converted to metallic W without any reaction phases. The sintered samples showed large pores with the size of about $70{\mu}m$ which were aligned parallel to the camphene growth direction. Also, the internal wall of large pores and near bottom part of specimen had relatively small pores with dendritic structure due to the growth of camphene dendrite depending on the degree of nucleation and powder rearrangement in the slurry.

• 한국세라믹학회지
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• 제32권11호
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• pp.1262-1268
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• 1995

Photoelectrochemical properties of p-GaAs electrode have been investigated. I-V characteristic shows that the cathodic photocurrent is observed at -0.7 V vs. SCE. The photoresponse at near 870~880nm wavelength indicates that the photogenerated carriers contibuted to the observed current. The maximum converson efficiency of 35% is obtained for a Xe lamp light source at 400nm. In C-V relation, capacitance peaks appeared at the frequencies of 100Hz and 300Hz due to the activation of the interfacial states which exist at the energy level corresponding to the one-third of the GaAs band gap. The difference of about 1.1V between flatband potential (Vfb) from the Mott-Schottky method and onset voltage from I-V curve is observed due to the trap of carriers at the interfacial states in the boundary between GaAs and electrolyte. In case of WO3 deposited p-GaAs electrode, higher positive onset current and photocurent density are obtained. This can be explained by the fact that carriers are generated by light penetrated into the WO3 thin flm as well as p-GaAs substrate and then move into the electrolyte effectively.

• 전자공학회논문지A
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• 제33A권3호
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• pp.117-125
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• 1996

The variation of the interfacial and the electrical properties of SiO$_{2}$TiW layers as a function of anneal temperature was extensively investigated. During the deposition of SiO$_{2}$ on TiW chemical bonds such as SiO$_{2}$, TiW, WO$_{3}$, WO$_{2}$ TiO$_{2}$ Ti$_{2}$O$_{5}$ has been created at the SiO$_{2}$/TiW interface. At the anneal temperature of 300$^{\circ}C$, WO$_{3}$ and TiO$_{2}$ bonds started to break due to the reduction phenomena of W and Ti and simultaneously the metallic W and Ti bonds started to create. Above 500$^{\circ}C$, a part of Si-O bonds was broken and consequently Ti/W silicide was formed. Form the current-voltage characteristics of Al/Sico$_{2}$(220$\AA$)/TiW antifuse structure, it was found that the breakdown voltage of antifuse device wzas decreased with increasing annealing temperature for SiO$_{2}$(220$\AA$)/TiW layer. When r, the insulating property of antifuse device of the deterioration of intermetallic SiO$_{2}$ film, caused by the influw of Ti and W.W.

• 한국수소및신에너지학회논문집
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• 제22권5호
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• pp.656-662
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• 2011

The purpose of this study was to correlate between photoelectrochemcial hydrogen production rate and electron transfer with various types of metal doped $TiO_2$ nanotubes as photoanodes. In order to fabricate light sensitized photoanode, CdS, $WO_3$, and Pt were doped by electrodeposition method. As the results of experiments, the electron transfer was favorable from higher position to lower position of conduction band (CB). In consequence, the higher hydrogen production rate was as follows, CdS/$TiO_2$ (100 $umol/hr-cm^2$) > $WO_3/TiO_2$ (20 $umol/hr-cm^2$) > Pt/$TiO_2$ (10 $umol/hr-cm^2$). The surface characterizations exhibited that crystal structure, morphological and electrical properties of various metal depoed $TiO_2$ nanotubes by the results of SEM, TEM, XPS, and photocurrent measurements.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.416-419
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• 2002

There are being two prominent studying for Digital Radiography. Direct and Indirect method of Digital Radiography are announced for producing high quality digital image. The one is using amorphous selenium as photoconductor and the other is using phosphor layer as a light conversion. But each two systems have strength and weakness such as high voltage and blurring effect. In this study, we investigated the electrical characteristic of $multi-layer\left(CaWO_{4}+a-Se \right)$ as a photoconductor according to the changing arsenic composition ratio. This is a basic research for developing of Hybrid digital radiography which is a new type X-ray detector. The arsenic composition ratio of a-Se compound is classified into 7 different kinds which have 0.1%, 0.3%, 0.5%, 1%, 1.5%, 5%, 10% and were made test sample throught thermo-evaporation. The phosphor layer of $CaWO_4$ was overlapped on a-Se using EFIRON optical adhesives. We measured the dark and photo current about the test sample and compared the electrical characteristic of the net charge and signal-to-noise ratio. Among other things, test sample of compound material of 0.3% arsenic showed good characteristic of $2.45nA/cm^2$ dark current and $357.19pC/cm^2/mR$ net charge at $3V/{\mu}m$.