• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.5
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• pp.94-100
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• 1994

The junction failure mechanism of W plugs has not been fully understood while the selective W deposition has been widely used for plugging interconnection lines. In this paper, the thermal stability and junction failure mechanism of sub-micron contacts using selective CVD-W plugs were intensively studied with the metal lines of AISiCu, Ti/AISiCu and TiN/AISiCu. The experimental results showed that the contact chain resistance and leakage current in the AISiCu and Ti/AISiCu metallizations were significantly degraded after annealing. From the SEM analysis, it was found that the junction spiking, due to the Al atoms diffusion along the porous interface between selective CVD-W and contactside wall, caused the junction failure. In constast, there was no degradation of the contact resistance and junction leakage current in TiN/AISiCu metal structu-re. It is believed that the TiN barrier layer could prevent AI(Ti) atoms Fromdiffusing. Therefore, TiN barrier between W plug and Al should be used to impro-ve the thermal stability of sub-micron contacts using the selective CVD-W plugs.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.123-123
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• 2000

선폭이 초미세화됨에 따라 게이트 전극에서의 공핍 현상 및 불순물 확산의 물제를 갖는 poly-Si 게이트를 대체할 전극 물질로 텅스텐(W)이 많이 연구되어 왔다. 반도체 소자의 배선물질로 일찍부터 사용되어온 텅스텐은 내화성 금속의 일종으로 용융점이 높고, 저항이 낮다. 그러나, 일반적으로 사용되고 있는 CVD에 의한 텅스텐의 증착은 반응가스(WF6)로부터 오는 불소(F)의 게이트 산화막내로의 확산으로 인해 MOS 소자가 크게 열화될수 있다. 본 연구에서는 W/TiN 이중 게이트 전극 구조를 갖는 MOS 캐패시터를 제작하여 전기적 특성을 살펴보았다. P-Type (100) Si위에 RTP를 이용, 85$0^{\circ}C$에서 110 의 열산화막을 성장 및 POA를 수행한 후, 반응성 스퍼터링법에 의해 상온, 6mTorr, N2/Ar=1/6 sccm, 100W 조건에서 TiN 박막을 150, 300, 500 의 3그룹으로 증착하였다. 그 위에 LPCVD 방법으로 35$0^{\circ}C$, 0.7Torr, WF6/SiH4/H2=5/5~10/500sccm 조건에서 2000~3000 의 텅스텐을 증착하였다. Photolithography 공정 및 습식 에칭을 통해 200$\mu\textrm{m}$$\times$200$\mu\textrm{m}$ 크기의 W/TiN 복층 게이트 MOSC를 제작하였다. W/TiN 복측 게이트 소자와 비교분석하기 위해 같은 조건의 산화막을 이용한 알루미늄(Al) 게이트, 텅스텐 게이트 MOSC를 제작하였다. 35$0^{\circ}C$에서 증착된 텅스텐 박막은 10~11$\Omega$/ 의 면저항을 가졌고 미소한 W(110) peak값을 나타내는 것으로 보아 비정질 상태에 가까웠다. TiN 박막의 경우 120~130$\Omega$/ 의 면저항을 가졌고 TiN (200)의 peak 값이 크게 나타난 반면, TiN(111) peak가 미소하게 나타났다. TiN 박막의 두께와 WF/SiH4의 가스비를 변화시켜가며 제작된 MOS 캐패시터를 HF 및 QS C-V, I-V 그리고 FNT를 통한 전자주입 방법을 이용하여 TiN 박막의 불소에 대한 확산 방지막 역할을 살펴 보았다. W/TiN 게이트 MOS 소자는 모두 순수 텅스텐 게이트보다 우수하였고, Al 게이트와 유사한 전기적 특성을 보여주었다. W/TiN 게이트 MOS 소자는 모두 순수 텅스텐 게이트보다 우수하였고, Al 게이트와 유사한 전기적 특성을 보여주었다. TiN 박막이 300 , 500 이고 WF6/SiH4의 가스비가 5:10인 경우 소자 특성이 우수하였으나, 5:5의 경우에는 FNT 전자주입 특성이 열화되기 시작하였다. 그리고, TiN박막의 두께가 150 으로 얇아질 경우에는 WF6/SiH4의 가스비가 5:10인 경우에서도 소자 특성이 열화되기 시작하였다. W/TiN 복층 게이트 MOS 캐패시터를 제작하여 전기적인 특성 분석결과, 순수 텅스텐 게이트 소자의 큰 저전계 누설 전류 특성을 해결할 수 있었으며, 불소확산에 영향을 주는 조건이 WF6/SiH4의 가스비에 크게 의존됨을 알 수 있었다. TiN 박막의 증착 공정이 최적화 될 경우, 0.1$\mu\textrm{m}$이하의 초미세소자용 게이트 전극으로서 텅스텐의 사용이 가능할 것으로 보여진다.

• Journal of the Korean Ceramic Society
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• v.37 no.9
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• pp.915-920
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• 2000

합성과 동시에 소결이 이루어지는 HPCS법을 이용하여 TiB$_2$-W 복합체를 텅스텐의 함량 변화에 다라 제조하여 이 복합체의 미세구조 및 기계적 물성에 대하여 연구하였다. 이 연구 결과, 텅스텐의 함량증가에 따라 삼성분 붕화 화합물인 TiWB$_2$의 상이 증가하였으며, 이 상의 증가에 따라 기계적 물성이 향상되었다. 60 MPa의 압력과 130$0^{\circ}C$, 3000 A에서 소결한 TiB$_2$-30vol% W 복합체에서 상대밀도, 강도, 경도 값은 각각 97.2%, 411.5 MPa, 22.36 GPa로 가장 우수한 물성을 얻을 수 있었다.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1311-1312
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• 2006

This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using 4he C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}{\cdot}cm^2$ of was obtained due to the improved interfacial adhesion.

• Journal of Powder Materials
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• v.24 no.6
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• pp.472-476
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• 2017

Porous W-10 wt% Ti alloys are prepared by freeze-drying a $WO_3-TiH_2$/camphene slurry, using a sintering process. X-ray diffraction analysis of the heat-treated powder in an argon atmosphere shows the $WO_3$ peak of the starting powder and reaction-phase peaks such as $WO_{2.9}$, $WO_2$, and $TiO_2$ peaks. In contrast, a powder mixture heated in a hydrogen atmosphere is composed of the W and TiW phases. The formation of reaction phases that are dependent on the atmosphere is explained by a thermodynamic consideration of the reduction behavior of $WO_3$ and the dehydrogenation reaction of $TiH_2$. To fabricate a porous W-Ti alloy, the camphene slurry is frozen at $-30^{\circ}C$, and pores are generated in the frozen specimens by the sublimation of camphene while drying in air. The green body is hydrogen-reduced and sintered at $1000^{\circ}C$ for 1 h. The sintered sample prepared by freeze-drying the camphene slurry shows large and aligned parallel pores in the camphene growth direction, and small pores in the internal walls of the large pores. The strut between large pores consists of very fine particles with partial necking between them.

• Applied Chemistry for Engineering
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• v.26 no.6
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• pp.666-673
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• 2015

In this paper the selective reduction catalyst (SCR) for controlling the NOx at high temperature range was studied. XRD and FT-IR BET analysis was also performed to determine the structural properties and adsorption/desorption characteristics of the catalyst. In the case of anatase $TiO_2$ support, a negligible NOx conversion was observed, but the $W/TiO_2$ catalyst made using W as a active metal showed an excellent ability to remove NOx. In particular, the $W/TiO_2$ exhibited a rapid increase in the catalytic activity due to the presence of W for the NOx conversion compared to that of using the pure $TiO_2$ at a high temperature range over $400^{\circ}C$. In addition, the phenomenon of reduced reaction activity due to the heat shock for a long time was found to be suppressed.

• Journal of Sensor Science and Technology
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• v.14 no.2
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• pp.131-135
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• 2005

This paper describes the ohmic contact formation of single crystalline 3C-SiC thin films heteroepitaxially grown on Si(001) wafers. In this work, a TiW (Titanium-tungsten) film as a contact matieral was deposited by RF magnetron sputter and annealed with the vacuum and RTA (rapid thermal anneal) process respectively. Contact resistivities between the TiW film and the n-type 3C-SiC substrate were measured by the C-TLM (circular transmission line model) method. The contact phases and interface the TiW/3C-SiC were evaulated with XRD (X-ray diffraction), SEM (scanning electron microscope) and AES (Auger electron spectroscopy) depth-profiles, respectively. The TiW film annealed at $1000^{\circ}C$ for 45 sec with the RTA play am important role in formation of ohmic contact with the 3C-SiC substrate and the contact resistance is less than $4.62{\times}10^{-4}{\Omega}{\cdot}cm^{2}$. Moreover, the inter-diffusion at TiW/3C-SiC interface was not generated during before and after annealing, and kept stable state. Therefore, the ohmic contact formation technology of single crystalline 3C-SiC using the TiW film is very suitable for high temperature MEMS applications.

• Korean Journal of Metals and Materials
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• v.56 no.12
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• pp.854-860
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• 2018

In spite of the many attractive properties of (W,Ti)C, its low fracture toughness limits its wide application. To improve the fracture toughness generally a second phase is added to fabricate a nanostructured composite. In this regard, graphene was considered as the reinforcing agent of (W,Ti)C. (W,Ti)C-graphene composites that were sintered within 2 min using pulsed current activated heating under a pressure of 80 MPa. The rapid consolidation method allowed retention of the nano-scale microstructure by blocking the grain growth. The effect of graphene on the hardness and microstructure of the (W,Ti)C-graphene composite was studied using a Vickers hardness tester and FE-SEM. The grain size of (W,Ti)C was reduced remarkably by the addition of graphene. Furthermore, the hardness decreased and the fracture toughness improved with the addition of graphene.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.732-737
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• 2000

Plasma enhanced chemical vapor deposition of $TiO_{2$\pm}{\delta}$ has been carried out using TEMAT [tetrakis(ethylmethylamido) titanium] and $H_2$. Increasing the power from 300 W to 500 W produced the high density plasma, leading to the formation of TiO$_2$films with an increased ratio of Ti to O and a negligible amount of C and N. Applying the bias of 30W to the substrate in creased the growth rate of the film with a slightly increased content of Ti in the film. In addition, $H_2O$ was from either the residual gas in the gase pressure or $H_2(/He)$ gas and actively participated in the formation of $TiO_2$ films. Consequently, Ti ions created in the plasma could be a main contributor to $TiO_2$ formation with a slight amount of $H_2O(~10^{-4}Toor)$ in the ambient, which provided the dissociation of TEMAT.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.4
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• pp.133-137
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• 2001

The properties of TiC/Al surface alloy prepared using a high power $CO_2$-laser was investigated. To analyze this process, the physical properties between substrate [Al] and TiC powder were measured. Surface layer size profiles, optical absorption rate and powder efficiency were measured as afunction of the laser output in TiC/Al matrix. Regardless of TiC powder existence, the absorption rate in substrate Al was decreased when laser output increased. When the laser output increased in the range of 2kW to 4.5 kW, the powder efficiency increased from 4% to 12%. However, TiC powder were not melted in molten aluminum. As a result, increased powder particles easily penetrated to the surface layer and created a two phase states in the metal matrix.