• Title/Summary/Keyword: W-N thin film

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Effects of the Introduction of UV Irradiation and Rapid Thermal Annealing Process to Sol-Gel Method Derived Ferroelectric Sr0.9Bi2.1Ta1.8Nb0.2O9 Thin Films on Crystallization and Dielectric/Electrical Properties (UV 노광과 RTA 공정의 도입이 Sol-Gel 법으로 제조한 강유전성 Sr0.9Bi2.1Ta1.8Nb0.2O9 박막의 결정성 및 유전/전기적 특성에 미치는 영향)

  • 김영준;강동균;김병호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.1
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    • pp.7-15
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    • 2004
  • The ferroelectric SBT thin films as a material of capacitors for non-volatile FRAMs have some problems that its remanent polarization value is relatively low and the crystallization temperature is quite high abovc 80$0^{\circ}C$. Therefore, in this paper, SBTN solution with S $r_{0.9}$B $i_{2.1}$T $a_{1.8}$N $b_{0.2}$$O_{9}$ composition was synthesized by sol-gel method. Sr(O $C_2$ $H_{5}$)$_2$, Bi(TMHD)$_3$, Ta(O $C_2$ $H_{5}$)$_{5}$and Nb(O $C_2$ $H_{5}$)$_{5}$ were used as precursors, which were dissolved in 2-methoxyethanol. SBTN thin films with 200 nm thickness were deposited on Pt/Ti $O_2$/ $SiO_2$/Si substrates by spin-coating. UV-irradiation in a power of 200 W for 10 min and rapid thermal annealing in a 5-Torr-oxygen ambient at 76$0^{\circ}C$ for 60 sec were used to promote crystallization. The films were well crystallized and fine-grained after annealing at $650^{\circ}C$ in oxygen ambient. The electrical characteristics of 2Pr=11.94 $\mu$C/$\textrm{cm}^2$, Ps+/Pr+=0.54 at the applied voltage of 5 V were obtained for a 200-nm-thick SBTN films. This results show that 2Pr values of the UV irradiated and rapid thermal annealed SBTN thin films at the applied voltage of 5 V were about 57% higher than those of no additional processed SBTN thin films. thin films.lms.s.s.

An Experimental Study on Melting Characteristics of Low-voltage Miniature Cartridge Fuse (저압용 소형 관형퓨즈의 용단 특성에 관한 실험적 연구)

  • Ji, H.K.;Kim, J.P.;Song, J.Y.;Choi, Y.W.;Park, C.S.;Park, N.K.;Kil, G.S.
    • Journal of the Korean Society of Safety
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    • v.28 no.5
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    • pp.15-20
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    • 2013
  • This paper dealt with melting characteristics of low-voltage miniature cartridge fuse used for 220 V electronic equipment. The experimental sample is low-voltage miniature cartridge fuse with rating of 250 V(3A) and size of $5{\times}20$ mm. In order to evaluate melting and scattering characteristics of the fuse, we applied to 8/20 ${\mu}s$ surge current, overload current and external thermal stress such as flame of fire. From the experimental results, the fuse element was melted and scattered by applied surge current(above 0.79 kA) and overload current(above 4.5 A). It was also attached to the inner surface of the fuse tube. The fuse element was attached as a thin film on inner surface of fuse tube when large surge current was applied. It was confirmed, however, the fuse element was not changed by external thermal stress such as flame and hot-air.

Chemical and Crystalline Properties of Polyimide Film Deposited by Ionized Cluster Beam (Ionizied Cluster Beam 방법으로 제작된 Polyimide 박막의 화학적 성질과 결정성)

  • K.W. Kim;S.C. Choi;S.S. Kim;S.J. Cho;S.Y. Hong;K.H. Jeong;J.N. Whang
    • Journal of the Korean Vacuum Society
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    • v.1 no.1
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    • pp.139-144
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    • 1992
  • Abstract-Polyimide (PI) thin films were deposited by the ionized cluster beam deposition (ICBD) technique. Imidization and crystallization of PI films were investigated using transmission electron microscopy (TEM) and Fourier transform infrared spectroscopy (FT-IR). PI films deposited under optimum conditions showed a maximum imidization and good crystal structure, which are superior to those of the films fabricated by other techniques.

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산소 유량에 따라 스퍼터된 ZnO 박막의 구조적, 광학적, 전기적 특성

  • Kim, Jong-Uk;Hwang, Chang-Su;Kim, Hong-Bae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.84-84
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    • 2011
  • RF magnetron sputtering을 이용하여 산소 유량에 따라 ZnO 박막을 유리기판 위에 제작하고 구조적, 광학적, 전기적 특성을 조사하였다. 박막 증착 조건의 초기 압력은 $1.0{\times}10^{-6}Torr$, RF 파워는 100W, 증착온도는 상온으로 고정하였으며 기판은 Corning 1737 유리 기판을 사용하였다. 공정 변수로 Ar:$O_2$가스 비율을 50:50 sccm, 75:25 sccm, 100:0 sccm으로 변화시켰다. 유리기판 위에 증착된 모든 ZnO 박막에서 (002) 면의 우선배향성이 관찰되었고 85% 이상의 투과율을 나타내었다. 산소유량이 적을수록 ZnO 박막의 결정성은 향상되었고, 광학적 밴드갭은 증가하였다. Hall 측정 결과 산소의 유량이 포함되어 있는 박막에서는 모두 완전한 산화물에 가까운 화학양론적 조성으로 면 저항이 $10^6{\Omega}/{\square}$ 이상인 부도체 특성을 보였으며, 산소가 포함되지 않은 샘플에서는 n타입의 반도체 특성이 확인되었다. 산소가 포함되지 않은 Ar 유량이 100sccm일 때 전기비저항 $3.56{\times}10^{+1}1{\Omega}cm$, 전하의 농도 $2.04{\times}10^{18}cm^{-3}$, 이동도 $8.59cm^2V^{-1}s^{-1}$로 반도체 활성층으로 적합한 전기적 특성을 얻었다. ZnO 박막의 경우 산소가 포함될 경우 결정성이 저하되고, 절연특성을 갖는 것을 확인할 수 있었다.

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Stable Blue Electroluminescence from Fluorine-containing Polymers (불소 함유된 고분자를 이용한 안정한 청색 발광 유기 EL)

  • Kang In-Nam
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.6
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    • pp.568-573
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    • 2006
  • We have synthesized new blue light emitting random copolymers, poly(9,9'-n-dioctylfluorene-co-perfluorobenzene-1,4-diyl)s (PFFBs), via Ni(0)-mediated coupling reactions. The weight-average molecular weights ($M_w$) of the PFFB copolymers ranged from 9,000 to 15,000. The PFFB copolymers dissolved in common organic solvents such as THF and toluene. The PL emission peaks of the PFFB copolymers were at around 420, 440, and 470 nm. EL devices were fabricated in ITO/PEDOT/polymer/Ca/Al configurations using these polymers. These EL devices were found to exhibit pure blue emission with approximate CIE coordinates of (0.15, 0.11) at $100cd/m^2$. The blue emissions of these devices might be due to the restriction of the polymer chains to aggregation by introducing of the highly electronegative fluorine moieties. The maximum brightnesses of the PFFB copolymer devices ranged from 140 to $3600cd/m^2$ with maximum efficiencies from 0.2 to 0.6 cd/A. The enhanced efficiency of the PFFB (8/2) copolymer device results from the inhibition of excimer formation by the introduction of the electronegative fluorine moieties into the copolymers.

SPIN POLARIZED PHOTOEMISSION AND MAGNETIC CIRCULAY DICHROISM STUDY OF FeAl THIN FILMS

  • Kim, K.W.;Kudryavtsev, Y.V.;Chang, G.S.;Whang, C.N.;Lee, Y.P.
    • Journal of the Korean Vacuum Society
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    • v.6 no.S1
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    • pp.53-58
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    • 1997
  • It is well known that the equiatomic FeAl alloy crystallizes in a paramagnetic CsCl structure and is very stable in a wide temperature range owing to a significant charge transfer from Al to Fe. A presence of structural defects normally enhances the magnetic and magneto-optical properties of this alloy. In this study spin-resolved photoemission and magnetic circular dichroism (MCD) were carried out on both ordered and disordered $Fe_{0.52}Al_{0.48}$ alloy films. The disordered state in the alloy films was obtained by a vapor quenching deposition on cooled substrates. It is shown that the order-disorder transition in the Fe0.52Al0.48 alloy films leads to a significant change in the spin polarization. Form the MCD results the orbital and spin magnetic moments of the constituent atoms are obtained. According to the sum rule the spin and orbital magnetic moments of Fe in the disordered FeAl film are $\mu\frac{SR}{spin}=0.8\mu_B$ and $\mu\frac{SR}{orb}=0.14\mu_B$ respectively. The spin magnetic moment is also evaluated to be $\mu\frac{BR}{spin}=0.77\mu_B$ by the branching ration method employing a photon polarization of 90%.

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Effect of BSO addition on Cu-O bond of GdBa2Cu3O7-x films with varying thickness probed by extended x-ray absorption fine structure

  • Jeon, H.K.;Lee, J.K.;Yang, D.S.;Kang, W.N.;Kang, B.
    • Progress in Superconductivity and Cryogenics
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    • v.18 no.4
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    • pp.1-4
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    • 2016
  • We investigated the relation between the Cu-O bond length and the superconducting properties of $BaSnO_3$ (BSO)-added $GdBa_2Cu_3O_{7-x}$ (GdBCO) thin films by using extended x-ray absorption fine structure (EXAFS) spectroscopy. 4 wt.% $BaSnO_3$ (BSO) added $GdBa_2Cu_3O_{7-x}$ (GdBCO) thin films with varying thickness from $0.2{\mu}m$ to $1.0{\mu}m$ were fabricated by using pulsed laser deposition (PLD) method. The transition temperature ($T_c$) and the residual resistance ratio (RRR) of the GdBCO films increased with increasing thickness up to $0.8{\mu}m$, where the crystalline BSO has the highest peak intensity, and then decreased. This uncommon behaviors of $T_c$ and RRR are likely to be created by the addition of BSO, which may change the ordering of GdBCO atomic bonds. Analysis from the Cu K-edge EXAFS spectroscopy showed an interesting thickness dependence of ordering behavior of BSO-added GdBCO films. It is noticeable that the ordering of Cu-O bond and the transition temperature are found to show opposite behaviors in the thickness dependence. Based on these results, the growth of BSO seemingly have evident effect on the alteration of the local structure of GdBCO film.

Development of Target-Specific Drug Delivery Systems Using Glycosylated Proliposome I-Binding of Asialofetuin-Labeled Liposomes to Lectin RCA- (표면수식된 프로리포솜에 의한 표적부위 지향성 약물수송체의 개발 I-갈락토스 당쇄로 표면수식된 리포솜의 간세포 렉틴 결합성-)

  • Shim, Chang-Koo;Lee, Chang-Yong;Kim, Chong-Kook
    • Journal of Pharmaceutical Investigation
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    • v.22 no.2
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    • pp.155-161
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    • 1992
  • Although glycosylated liposomes have attracted much attention as targeting delivery systems (DDS) of drugs to specific organs which have glycoside receptors, physical instability of liposomes greatly limits their practical application. In this case, proliposomes might be a potential answer to solve this problem. Utilizing the proliposomes as tageting DDS has been a goal of our series of works; we have tried to develop DDS which form liposomes uppon adding water and can deliver drugs to specific target organs/cells such as hepatocytes. In this paper, preparation of glycosylated liposomes and binding of the liposomes with lectin (agglutinin RCA 120) was studied. Asialoletuin (AF) was selected as a model compound which has galactose terminal and is favorable for binding with galactose receptor on the surface of hepatocytes. AF was obtained by splitting the terminal N-acetylneuraminic acid (NANA) of fetuin. Small unilamellar AF-liposomes were prepared by mixing aqueous solution of AF-palmitate with thin film of phosphatidyl choline and cholesterol (30:10 w/w) formed on the innersurface of the round bottomed flask. They were successively extruded through polycarbonate membranes (0.45 mm). Palmitoyl-AF not incorporated into the liposomal bilayer was separated from liposomes by a Sepharose 4B column equilibrated with 10 mM Tris-HCI buffered saline. Lectin (agglutinin RCA 120) was added to the suspension of AF-liposomes and incubated at $37^{\circ}C$ for 2 hr. After centrifugation, the unbound lectin in the supernatant was assayed for protein. The binding of the lectin to AF-liposomes (AF content 2.8 nmole) at $37^{\circ}C$ was linear at least upto 35 mg of lectin indicating high affinity association of the lectin to AF molecules of the liposomes.

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A study on the deposition of DLC films by magnetron PECVD (Magnetron PECVD에 의한 DLC 박막의 제작에 관한 연구)

  • Kim, Soung-Young;Lee, Jai-Sung;Park, Jin-Seok
    • Proceedings of the KIEE Conference
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    • 1996.07c
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    • pp.1446-1449
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    • 1996
  • Thin films of diamond-like carbon(DLC) have been deposited using a magnetron plasma-enhanced chemical vapor deposition(PECVD) method with an rf(13.56 MHz) plasma of $C_{3}H_{8}$. From the Langmuir probe I-V characteristics, it can be observed that increasing the magnetic field yields an increase of the temperature($T_e$) and density($N_e$) of electron. At a magnetic field of 82 Gauss, the estimated values of $T_e$ and $N_e$ are approximately $1.5\;{\times}\;10^5$ K(13.5 eV) and $1.3\;{\times}\;10^{11}\;cm^{-3}$, respectively. Such a highly dense plasma can be attributed to the enhanced ionization caused by the cyclotron motion of electrons in the presence of a magnetic field. On the other hand, the negative dc self-bias voltage($-V_{sb}$) decreases with an increasing magnetic field, which is irrespective of gas pressure in the range of $1{\sim}7$ mTorr. This result is well explained by a theoretical model considering the variation of $T_e$. Deposition rates of DLC films increases with a magnetic field. This may be due to the increased mean free path of electrons in the magnetron plasma. Structures of DLC films are examined by using various techniques such as FTIR and Raman spectroscopy. Most of hydrocarbon bonds in DLC films prepared consist of $sp^3$ tetrahedral bonds. Increasing the rf power leads to an enhancement of cross-linking of carbon atoms in DLC films. At approximately 140 W, the maximum film density obtained is about 2.4 $g/cm^3$.

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Fabrication and Characteristics of ZnO TFTs for Flexible Display using Low Temp Process (Flexible Display용 Low Temp Process를 이용한 ZnO TFT의 제작 및 특성 평가)

  • Kim, Young-Su;Kang, Min-Ho;Nam, Dong-Ho;Choi, Kang-Il;Lee, Hi-Deok;Lee, Ga-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.10
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    • pp.821-825
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    • 2009
  • Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO TFTs having different channel thicknesses deposited at low temperature. The ZnO films were deposited as active channel layer on $Si_3N_4/Ti/SiO_2/p-Si$ substrates by RF magnetron sputtering at $100^{\circ}C$ without additional annealing. Also, the ZnO thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film was deposited as gate insulator by PE-CVD at $150^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method. The fabricated devices have different threshold slop, field effect mobility and subthreshold slop according to channel thickness. This characteristics are related with ZnO crystal properties analyzed with XRD and SPM. Electrical characteristics of 60 nm ZnO TFT (W/L = $20\;{\mu}m/20\;{\mu}m$) exhibited a field-effect mobility of $0.26\;cm^2/Vs$, a threshold voltage of 8.3 V, a subthreshold slop of 2.2 V/decade, and a $I_{ON/OFF}$ ratio of $7.5\times10^2$.