• 반도체디스플레이기술학회지
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• 제12권2호
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• pp.1-6
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• 2013

The effects of interlayer formation and thermal treatment on the field-emission properties of carbon nanotubes (CNTs) were investigated. The CNTs were prepared on tungsten (W) micro-tip substrates using the electrophoretic deposition (EPD) method. The interlayers, such as aluminum (Al) and hafnium (Hf) were coated on the W-tips prior to CNT deposition and after the deposition of CNTs all the species were thermally treated at $700^{\circ}C$ for 30 min. The field-emission properties of CNTs were significantly improved by thermal treatment. The threshold electric field for igniting the electron emission was decreased and the emission current was increased. The Raman spectroscopy results indicated that this was attributed mainly to the enhancement of CNTs by thermal treatment. Also, the CNTs deposited on the interlayers showed the remarkably improved results in the long-term emission stability, especially when they were thermally treated. The X-ray photoelectron spectroscopy (XPS) measurement confirmed that this was resulted from the formation of the additional cohesive forces between the CNTs and the underlying interlayers.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권9호
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• pp.444-449
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• 2001

In this paper, a novel ultraviolet sensor is presented based on a photoluminescent porous silicon. Porous silicon layer was formed by chemical etching of surface of pn junction in a $HF(48%)-HNO_3(60%)-H_20$ solution. Incident ultraviolet(UV) light is converted to visible light by photoluminescent porous silicon layer, and then this visible light generates electron-hole pairs in the pn junction, which produces a photocurrent flow through the device. In order to maximize detection efficiency, the peak sensitivity wavelength of the pn junction diode was matched with the peak wavelength of Photoluminescence from porous silicon layer. The porous silicon ultraviolet sensor showed a large output current as UV intensity increases and but very low sensitivity to visible light. The detection sensitivity of porous silicon sensor was calculated as 2.91mA/mW. These results are expected to open up a possibility that the present porous silicon sensor can be used for detecting UV light in a visible background, compared to silicon UV detectors which have an undesirable response to visible light.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.26.1-26.1
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• 2011

We investigated the atomic layer deposition (ALD) process for nitrogen doped ZnO and the application for n-ZnO : N/p-Si (NW) coaxial hetero-junction photodetectors. ALD ZnO:N was deposited using diethylzinc (DEZ) and diluted $NH_4OH$ at $150^{\circ}C$ of substrate temperature. About 100~300 nm diameter and 5 um length of Si nanowires array were prepared using electroless etching technique in 0.108 g of $AgNO_3$ melted 20 ml HF liquid at $75^{\circ}C$. TEM images showed ZnO were deposited on densely packed SiNW structure achieving extraordinary conformality. When UV (360 nm) light was illuminated on n-ZnO:N/p-SiNW, I-V curve showed about three times larger photocurrent generation than film structure at 10 V reverse bias. Especially, at 660 nm wave length, the coaxial structure has 90.8% of external quantum efficiency (EQE) and 0.573 A/W of responsivity.

• Corrosion Science and Technology
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• 제17권1호
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• pp.20-29
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• 2018

Ti and its alloys show the excellent corrosion resistance to chloride environments, but they show less corrosion resistance in HCl, $H_2SO_4$, NaOH, $H_3PO_4$, and especially HF environments at high temperature and concentration. In this study, we used the commercially pure titanium and Ti-6Al-4V alloy, and evaluated the effect of the manufacturing process on the electrochemical properties. We used commercial products of rolled and forged materials, and made additive manufactured materials by DMT (Directed Metal Tooling) method. We annealed each specimen at $760^{\circ}C$ for one hour and then air cooled. We performed anodic polarization test, AC impedance measurement, and Mott-Schottky plot to evaluate the electrochemical properties. Despite of the difference of its microstructure of CP-Ti and Ti-6Al-4V alloys by the manufacturing process, the anodic polarization behavior was similar in 20% sulfuric acid. However, the addition of 0.1% hydrofluoric acid degraded the electrochemical properties. Among three kinds of the manufacturing process, the electrochemical properties of additive manufactured CP-Ti, and Ti-6Al-4V alloys were the lowest. It is noted that the test materials showed a Warburg impedance in HF acid environments.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.380-381
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• 2012

Bioinspired sea urchin-like structures were fabricated on silicon by inductively coupled plasma (ICP) etching using lens-like shape hexagonally patterned photoresist (PR) patterns and subsequent metal-assisted chemical etching (MaCE) [1]. The lens-like shape PR patterns with a diameter of 2 ${\mu}m$ were formed by conventional lithography method followed by thermal reflow process of PR patterns on a hotplate at $170^{\circ}C$ for 40 s. ICP etching process was carried out in an SF6 plasma ambient using an optimum etching conditions such as radio-frequency power of 50 W, ICP power of 25 W, SF6 flow rate of 30 sccm, process pressure of 10 mTorr, and etching time of 150 s in order to produce micron structure with tapered etch profile. 15 nm thick Ag film was evaporated on the samples using e-beam evaporator with a deposition rate of 0.05 nm/s. To form Ag nanoparticles (NPs), the samples were thermally treated (thermally dewetted) in a rapid thermal annealing system at $500^{\circ}C$ for 1 min in a nitrogen environment. The Ag thickness and thermal dewetting conditions were carefully chosen to obtain isolated Ag NPs. To fabricate needle-like nanostructures on both the micron structure (i.e., sea urchin-like structures) and flat surface of silicon, MaCE process, which is based on the strong catalytic activity of metal, was performed in a chemical etchant (HNO3: HF: H2O = 4: 1: 20) using Ag NPs at room temperature for 1 min. Finally, the residual Ag NPs were removed by immersion in a HNO3 solution. The fabricated structures after each process steps are shown in figure 1. It is well-known that the hierarchical micro- and nanostructures have efficient light harvesting properties [2-3]. Therefore, this fabrication technique for production of sea urchin-like structures is applicable to improve the performance of light harvesting devices.

• Journal of Nutrition and Health
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• 제41권2호
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• pp.141-146
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• 2008

생체 내 (ex vivo) 실험에서 혼합 (고들빼기, 돌미나리, 메밀, 톳, 생강)시료의 물 추출물을 4주간 격일로 마우스 체중 kg 당 0, 50, 500 mg/kg B.W.의 농도로 마우스에 경구 투여한 후 비장세포 증식능, LPS에 의해 활성화된 복강 대식세포가 분비하는 염증성 사이토카인 ($IL-1{\beta}$, IL-6, $TNF-{\alpha}$)의 생성량을 측정하였다. 그 결과 혼합시료의 물추출물은 ConA나 LPS로 자극하지 않은 경우 50 mg./kg B.W. 농도에서 대조군에 비해 유의적으로 높은 비장 증식능을 보였다. LPS에 의해 활성화된 복강 대식세포의 사이토카인 분비량을 측정한 결과에서도 $IL-1{\beta}$, IL-6, $TNF-{\alpha}$의 분비량은 마우스 체중 kg 당 50 mg/kg B.W. 농도의 투여군에서 높은 생성량을 보여주었으나, 500 mg/kg B.W.의 농도 투여군에서는 IL-6 분비량은 대조군에 비해 높은 반면 $TNF-{\alpha}$의 분비량은 큰 차이를 보이지 않았다. 이상의 결과에 따라 비장세포 증식능과 사이토카인 분비능을 검색한 결과 고들빼기, 도미나리, 메밀, 톳, 생강을 혼합한 혼합시료의 추출물 50 mg/kg B.W. 농도 투여가 면역 세포와 면역 기관의 주요기능을 증진시키리 가능성이 있을 것으로 사료된다. 이러한 연구결과를 토대로 앞으로 혼합식을 통한 기능성 식품 개발에 기초 연구 자료가 될 것으로 기대된다.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2004년도 추계학술대회논문집
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• pp.40-43
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• 2004

Stamps for microcontact processing are fabricated by casting elastomer such as PDMS on a master with a negative of the desired pattern. After curing, the PDMS stamp is peeled away from the master and exposed to a solution of ink and then dried. Transfer of the ink from the PDMS stamp to the substrate occurs during a brief contact between stamp and substrate. Generally, negative-tone masters, which are used for making positive-tone PDMS stamps, are fabricated by using photolithographic technique. The shortcomings of photolithography are a relative high-cost process and require extensive processing time and heavy capital investment to build and maintain the fabrication facilities. The goal of this study is to fabricate a negative-tone master by using Nano-indenter based patterning technique. Various sizes of V-grooves and U-groove were fabricated by using the combination of nanoscratch and HF isotropic etching technique. An achieved negative-tone structure was used as a master in the PDMS replica molding process to fabricate a positive-tone PDMS stamp.

• 열처리공학회지
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• 제20권2호
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• pp.78-83
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• 2007

CrN coatings were deposited by cathodic arc ion plating method on the SKD11 steel substrates. Atmosphere temperature of $350^{\circ}C$, arc current of 90 A, nitrogen partial pressure of 1.0-5.3 Pa, and negative bias voltage of 30-135 V were selected. The characteristics of microstructure were investigated with XRD. Hardness, adhesion and friction coefficient measured by microhardness tester, scratch tester, and ball on disk tribometer. Microstructures depended on nitrogen partial pressure and bias voltage. The preferred orientation of the films was changed from (200) to (111) with decreasing pressure and increasing bias voltage. Adhesion properties related with microstructure, but microstructure changes slightly influenced on hardness and friction properties. The critical load.($Lc_1$) and hardness of CrN films deposited at 5.3 Pa, -30 V condition were 55 N(HF1), $2157{\pm}47\;Hk_{0.025}$. The friction coefficient were about 0.5 under dry condition.

• 소성∙가공
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• 제20권6호
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• pp.439-449
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• 2011

The temperature distribution and subsequent permanent deformation of SS400 carbon steel plate subjected to an induction-based line heating process were studied by a numerical method involving coupled 3-D electromagnetic-thermal-structural analysis. The numerical study revealed that the amount of permanent deformation is strongly related to the Joule loss caused by such process conditions as input power and moving speed of the heat source. To validate the numerical analysis results, line heating experiments were carried out with a high frequency(HF) induction heating(IH) equipment capable of bending thick plate with the moving accuracy of ${\pm}0.1mm$ in heating coil position. The amount of permanent deformation increased with decreasing moving speed and increasing input power.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.106-106
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• 2000

반도체 소자가 미세화 됨에 따라 게이트 유전막으로 사용되는 SiO2의 박막화가 요구되나, boron penetration에 의한 Vt shift, 게이트 누설전류, 다결정 실리콘 게이트의 depletion effect 그리고 quantum mechanical effect 때문에 ~20 급에서 한계를 나타내고 있다. 이에 0.1$\mu\textrm{m}$이상의 design rule을 갖는 logic이나 memory 소자에서 요구되어지는 ~10 급 게이트 산화막은 SiO2(K=3.9)를 대신하여 고유전율을 갖는 재료의 채택이 필수 불가결하게 되었다. 고유전 박막 재료를 사용하면, 두께를 두껍게 해도 동일한 inversion 특성이 유지되고 carrier tunneling 이 덜하여 등가 산화막의 두께를 줄일 수 있다. 이러한 고유전박막 재료중 가장 활발히 연구되고 있는 재료는 Ta2O5, Al2O3, STO 그리고 BST 등이 있으나 Ta2O5, STO, BST 등은 실리콘 기판과 직접 반응을 한다는 문제를 가지고 있으며, Al2O3는 유전율이 낮의 재료가 최근 주목받고 있다. 본 실험에서는 ZrO2, HfO2 또는 그 silicates 등의 재료가 최근 주목 받고 있다. 본 실험에서는 ZrO2 박막의 증착조건에 따른 물리적, 전기적 특성 변화에 대하여 연구하였다. RCA 방식으로 세정한 P-type (100) 실리콘 기판위에 reactive DC sputtering 방법으로 압력 5mtorr, power 100~400W, 기판온도는 100-50$0^{\circ}C$로 변화시켜 ZrO2 박막을 증착한 후 산소와 아르곤 분위기에서 400-80$0^{\circ}C$, 10-120min으로 열처리하였다. 증착직후의 시편들과 열처리한 ZrO2 박막의 미세구조와 전기적 특성 변화를 관찰하였다. 우선 굴절율(RI)를 이용해 ZrO2 박막의 밀도를 예측하여 power와 기판온도에 따라 이론값 2.0-2.2 에 근접한 구조를 얻은 후 XRD, XPS, AFM, 그리고 TEM을 사용하여 ZrO2 박막의 chemical bonding, surface roughness 그리고 interfacial layer의 특성을 관찰하였다. 그리고 C-V, I-V measurement를 이용해 capacitance, 유전율, 누설전류 등의 전기적 특성을 관찰해 최적 조건을 설정하였다.