• Journal of the Korean institute of surface engineering
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• v.49 no.3
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• pp.301-306
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• 2016

The effects of nanotexturing and post-etching on the reflection and quantum efficiency properties of diamond wire sawn (DWS) multicrystalline silicon (mc-Si) solar cell have been investigated. The chemical solutions, which are acidic etching solution (HF-$HNO_3$), metal assisted chemical etching (MAC etch) solutions ($AgNO_3$-HF-DI, HF-$H_2O_2$-DI) and post-etching solution (diluted KOH at $80^{\circ}C$), were used for micro- and nano-texturing at the surface of diamond wire sawn (DWS) mc-Si wafer. Experiments were performed with various post-etching time conditions in order to determine the optimized etching condition for solar cell. The reflectance of mc-Si wafer texturing with acidic etching solution showed a very high reflectance value of about 30% (w/o anti-reflection coating), which indicates the insufficient light absorption for solar cell. The formation of nano-texture on the surface of mc-Si contributed to the enhancement of light absorption. Also, post-etching time condition of 240 s was found adequate to the nano-texturing of mc-Si due to its high external quantum efficiency of about 30% at short wavelengths and high short circuit current density ($J_{sc}$) of $35.4mA/cm^2$.

• Electrical & Electronic Materials
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• v.16 no.9
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• pp.62.1-62
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• 2003

Silicon oxide with thickness lee than 9 nm is fabricated by tube furnace oxidation. Nitrogen is added to dilute the oxidation rate. Aluminum dots with radius of 0.05 cm are deposited on the oixde. High frequency capacitance-voltage(HF C-V), conductance-voltage(G-V) and current-voltage(I-V) characteristics are measured. Annealing under nitrogen atmosphere is carried out with different time and at different temperature. Densities of the interface states before and after annealing are compared. After annealing, a decrease in density of the interface states is found. Experiments show that 45$0^{\circ}C$ annealing for 30 minutes has the lowest density of the interface states.

• Proceedings of the KIPE Conference
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• 2011.07a
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• pp.459-460
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• 2011

본 논문에서는 산과 골이 있는 복잡한 형상의 기어를 일정한 깊이로 열처리하기 위한 효율적인 유도가열에 관한 연구이다. 이를 위해 동시에 이중주파수를 발생하면서 출력을 각각 제어할 수 있는 인버터를 설계하였으며 두개의 인버터로 구동되는 방식을 기준으로 해석, 설계 및 부하와 매칭을 위한 필터 설계를 수행하여, MF(Medium frequency)와 HF(High frequency에서 공진주파수 운전을 위한 최적의 인버터를 설계 및 제작하고자 한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.123-123
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• 2000

선폭이 초미세화됨에 따라 게이트 전극에서의 공핍 현상 및 불순물 확산의 물제를 갖는 poly-Si 게이트를 대체할 전극 물질로 텅스텐(W)이 많이 연구되어 왔다. 반도체 소자의 배선물질로 일찍부터 사용되어온 텅스텐은 내화성 금속의 일종으로 용융점이 높고, 저항이 낮다. 그러나, 일반적으로 사용되고 있는 CVD에 의한 텅스텐의 증착은 반응가스(WF6)로부터 오는 불소(F)의 게이트 산화막내로의 확산으로 인해 MOS 소자가 크게 열화될수 있다. 본 연구에서는 W/TiN 이중 게이트 전극 구조를 갖는 MOS 캐패시터를 제작하여 전기적 특성을 살펴보았다. P-Type (100) Si위에 RTP를 이용, 85$0^{\circ}C$에서 110 의 열산화막을 성장 및 POA를 수행한 후, 반응성 스퍼터링법에 의해 상온, 6mTorr, N2/Ar=1/6 sccm, 100W 조건에서 TiN 박막을 150, 300, 500 의 3그룹으로 증착하였다. 그 위에 LPCVD 방법으로 35$0^{\circ}C$, 0.7Torr, WF6/SiH4/H2=5/5~10/500sccm 조건에서 2000~3000 의 텅스텐을 증착하였다. Photolithography 공정 및 습식 에칭을 통해 200$\mu\textrm{m}$$\times$200$\mu\textrm{m}$ 크기의 W/TiN 복층 게이트 MOSC를 제작하였다. W/TiN 복측 게이트 소자와 비교분석하기 위해 같은 조건의 산화막을 이용한 알루미늄(Al) 게이트, 텅스텐 게이트 MOSC를 제작하였다. 35$0^{\circ}C$에서 증착된 텅스텐 박막은 10~11$\Omega$/ 의 면저항을 가졌고 미소한 W(110) peak값을 나타내는 것으로 보아 비정질 상태에 가까웠다. TiN 박막의 경우 120~130$\Omega$/ 의 면저항을 가졌고 TiN (200)의 peak 값이 크게 나타난 반면, TiN(111) peak가 미소하게 나타났다. TiN 박막의 두께와 WF/SiH4의 가스비를 변화시켜가며 제작된 MOS 캐패시터를 HF 및 QS C-V, I-V 그리고 FNT를 통한 전자주입 방법을 이용하여 TiN 박막의 불소에 대한 확산 방지막 역할을 살펴 보았다. W/TiN 게이트 MOS 소자는 모두 순수 텅스텐 게이트보다 우수하였고, Al 게이트와 유사한 전기적 특성을 보여주었다. W/TiN 게이트 MOS 소자는 모두 순수 텅스텐 게이트보다 우수하였고, Al 게이트와 유사한 전기적 특성을 보여주었다. TiN 박막이 300 , 500 이고 WF6/SiH4의 가스비가 5:10인 경우 소자 특성이 우수하였으나, 5:5의 경우에는 FNT 전자주입 특성이 열화되기 시작하였다. 그리고, TiN박막의 두께가 150 으로 얇아질 경우에는 WF6/SiH4의 가스비가 5:10인 경우에서도 소자 특성이 열화되기 시작하였다. W/TiN 복층 게이트 MOS 캐패시터를 제작하여 전기적인 특성 분석결과, 순수 텅스텐 게이트 소자의 큰 저전계 누설 전류 특성을 해결할 수 있었으며, 불소확산에 영향을 주는 조건이 WF6/SiH4의 가스비에 크게 의존됨을 알 수 있었다. TiN 박막의 증착 공정이 최적화 될 경우, 0.1$\mu\textrm{m}$이하의 초미세소자용 게이트 전극으로서 텅스텐의 사용이 가능할 것으로 보여진다.

• Journal of Nutrition and Health
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• v.26 no.5
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• pp.566-577
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• 1993

The study was to compare the effect of dietary fatty acids on fatty acid profile in tissue and the status of tocopherol and lipid peroxidation, and superoxide dismutase and glutathione peroxidase activities at two fat levels. Male Sprague Dawley rats weighing average 350g(17 weeks) were fed either low fat(LF, 4.3% w/w, 10% kcal) or high fat(HF, 20.8%, w/w, 40% kcal)diet for 6 weeks. The fats used were beef tallow as a source of saturated fatty acid, corn oil for n-6 linoleic acid, perilla oil for n-3 $\alpha$-linolenic acid and fish oil for n-3 eiocosapentatenoic acid(EPA) and n-3 docosahexaenoic acid(DHA). Palsma tocopherol was significantly reduced by fish oil compared to beef tallow at body fat level. However, there was no significant effect on the levels of plasma MDA, RBC MDA and tocopherol, and RBC hempolysis by the type and amount of dietary fat. The peroxidizibility index of fatty acid profile in plasma and liver was increased and liver MDA level was significantly increased by fish oil when dietary fat level was increased. The activities of SOD and GSHPx tended to be increased by perilla oil and fish oil at both fat oil significantly reduced the incorpration of c20:4 and increased the incorporation of c20:5 into liver compared to corn oil. The incorporation of n-3 fatty acids into tissue by perilla oil rich in $\alpha$-linolenic acid was significantly higher tan corn oil and its effect was improved with higher amount of perilla oil in diet by high fat diet. Overall, the lipid peroxidation of tissue could be prevented by tocopherol supplementation when dietary fat level was low in diet. However, at high fat diet, tocopherol supplementation might not be enough to prevent the lipid peroxidation in tissue since the potential for lipid peroxidation was tended to be increased with higher incorporation of higher unsaturated n-3 fatty acids into tissue. Therefore, it could not be recommended to consume large amount of fish oil even with excess amount of tocopherol supplemented to the high fat diet.

• Macromolecular Research
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• v.8 no.5
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• pp.238-242
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• 2000

The new trisiloxane-bridged heterometallic dinuclear metallocenes, hexamethyltrisiloxanediyl(cyclopentadienyltitanium trichloride) (cyclopentadienylindenyl zirconium dichloride) , $C_3ITi-Cp(CH_3)_2Si-O-Si(CH_3)_2-O-Si(CH_3)_2-Cp-ZrIndCI_2$ (1) and hexamethyltrisiloxanediyl (cyclopentadienylindenylhafnium dichloride) (cyclopentadienylindenyl zirconium dichloride), $C_2IndHf-Cp(CH_3)_2Si-O-Si(CH_3)_2-Cp-ZrIndCl_2$ 2) connecting two dissimilar metallocenes were synthesized and used for ethylene polymerization in the presence of modified methylaluminoxane (MMAO) cocatalyst. The catalytic activity of heterometallic dinuclear metallocenes, 1 and 2 was lower than that of corresponding mononuclear metal-locene as well as two physically mixed catalysts, $CpTiCl_2/Cp_2ZrCl_2 and Cp_2HfCl_2/Cp_2ZrCl_2$. On the tither hand, MWD of PE obtained with 1 and 2 was remarkably broader ($M_w/M_n$) became up to 9.4) than those of PEs prepared with the corresponding mononuclear metallocenes and mixed catalysts. With analysis by GPC and CFC, it was found that PE produced by the heterometallic dinuclear metallocenes exhibited the definite bimodal GPC curves that should cause the broadening of MWD.

• Journal of Integrative Natural Science
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• v.3 no.3
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• pp.153-156
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• 2010

Oxidation behaviors of porous silicon were investigated by the measurement of area of $SiO_2$ vibrational peaks in FT-IR spectra during thermal oxidation of porous silicon at corresponding temperatures. Visible photoluminescent porous silicon samples were obtained from an electrochemical etch of n-type silicon of resistivity between 1-10 ${\Omega}/cm$. The etching solution was prepared by adding an equal volume of pure ethanol to an aqueous solution of HF. The porous silicon was illuminated with a 300 W tungsten lamp for the duration of etch. Etching was carried out as a two-electrode galvanostatic procedure at applied current density of 200 $mA/cm^2$ for 5 min. The porosity of samples prepared was about 80%. After formation of porous silicon, the samples were thermally oxidized at $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, and $400^{\circ}C$, respectively. The growth rate of $SiO_2$ layer of porous silicon was investigated by using FT-IR spectroscopy. The effect of oxidation of porous silicon was presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.323-324
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• 2007

Investigation of improving the properties of UV photodetector which uses the wide bandgap of ZnO are under active progress. In this paper, transparent conducting aluminum-doped Zinc oxide films(AZO) were prepared by rf magnetron sputtering on glass(corning 1737) and p-Si substrate, were then annealed at temperature $400^{\circ}C$ for 2hr. The AZO thin films were deposited by RF sputtering system. HF power and work pressure is 120 W and 15 mTorr, respectively, and the purity of AZO target is 5N. The AZO thin films were deposited at 300, 400, $500^{\circ}C$, and $600^{\circ}C$. For sample deposited at $400^{\circ}C$, we observed best $V_r-I_{ph}$ of 0.94 mA and good transmittance.

• Bulletin of the Korean Chemical Society
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• v.18 no.12
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• pp.1264-1268
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• 1997

The poly(methylsilene) (1) was modified with the group 4 metallocene Cp2MCl2/Red-Al (M = Ti, Zr, Hf) combination catalyst and with the group 6 metal carbonyl M(CO)6 (M = Cr, Mo, W) catalyst, producing the highly cross-linked isoluble polymer and the lowly cross-linked soluble polymer, respectively. An interrelationship between molecular weight and percent ceramic residue yield with metal within the respective group was not found. The polymers modified with the group 4 metallocene combination catalysts have higher molecular weight and lower percent ceramic residue yield than the polymers modified with the group 6 metal carbonyl catalysts do. The catalytic activity of group 4 metallocene combinations appears to be higher at ∼100 ℃, but to be lower at very high temperature than those of group 6 metal carbonyls. The pyrolysis of the modified 1 yielded SiC ceramic.

• Electronics and Telecommunications Trends
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• v.22 no.3 s.105
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• pp.29-37
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• 2007

RFID 기술은 반도체 기술의 발전과 인터넷의 등장으로 인하여 지난 10여 년 동안 꾸준한 발전을 해왔으며 유통, 물류, 의료, 교육 등 다양한 분야에 적용되고 있다. 이는 향후 수 년 내에 거의 모든 물품에 태그를 부착하게 됨에 따라 유비쿼터스 환경 구축에 큰 기여를 할 것으로 기대된다. 이러한 RFID 기술은 저주파(LF), 고주파(HF), 초고주파(UHF) 및 마이크로파(M/W) 대역의 무선전파를 사용하며 각 대역의 전파 특성에 따라 동물추적, 교통카드, 물품관리, 전자화폐 등 다양한 분야에 선택적으로 적용되고 있으며, 단말기의 형태에 따라 고정형, 휴대형, 모바일 RFID 기술로 분류되고 최근에는 택시안심귀가서비스 등 휴대폰에 RFID 리더 기능이 결합된 모바일 RFID 서비스도 시범서비스를 선보이면서 우리 생활에 파고들고 있다. 또한 항만물류 관리 등과 같이 긴 인식거리가 필요한 능동형 RFID 기술을 포함하여 많은 연구와 실증실험, 시범서비스나 본사업이 이루어지고 있으며 최근에는 파렛, 케이스 단위가 아닌 물품 단위에 태그 부착을 위한 ILT 기술도 속속 선보이고 있다. 본 고에서는 시장전망이 가장 밝은 것으로 알려진 UHF 대역을 중점으로 RFID 기술을 살펴보고 이중에서도 모바일 RFID 기술을 포함한 수동형 RFID 기술, 능동형 RFID 기술 및 이와 관련한 표준화 동향을 알아본다.이를 활용한 응용 시스템에 대하여 간략히 살펴볼 것이다.