• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.4
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• pp.109-116
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• 2024

β-Ga₂O₃ is a representative ultra-wide bandgap (UWBG) semiconductor that has attracted much attention for power device applications due to its wide-bandgap of 4.9 eV and high-breakdown voltage of 8 MV/cm. In addition, because solution growth is possible, it has advantages such as fast growth rate and lower production cost compared to SiC and GaN [1-2]. In this study, we have successfully grown Si-doped 10 mm thick Si-doped β-Ga₂O₃ single crystals by the EFG (Edge-defined Film-fed Growth) method. The growth direction and growth principal plane were set to [010] / (010), respectively, and the growth speed was 7~20 mm/h. The as-grown β-Ga₂O₃ single crystal was cut into various crystal planes (001, 100, ${\bar{2}}01$) and off-angles (1^o, 3^o, 4^o), and then surface processed. After processed, the homoepitaxial layer was grown on the epi-ready substrate using the HVPE (Halide vapor phase epitaxy) method. The processed samples and the epi-layer grown samples were analyzed by XRD, AFM, OM, and Etching to compare the surface properties according to the crystal plane and off-angle.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.2
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• pp.83-90
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• 2023

The β-Ga₂O₃ has the most thermodynamically stable phase, a wide band gap of 4.8~4.9 eV and a high dielectric breakdown voltage of 8MV/cm. Due to such excellent electrical characteristics, this material as a power device material has been attracted much attention. Furthermore, the β-Ga₂O₃ has easy liquid phase growth method unlike materials such as SiC and GaN. However, since the grown pure β-Ga₂O₃ single crystal requires the intentionally controlled doping due to a low conductivity to be applied to a power device, the research on doping in β-Ga₂O₃ single crystal is definitely important. In this study, various source powders of un-doped, Sn 0.05 mol%, Sn 0.1 mol%, Sn 1.5 mol%, Sn 2 mol%, Sn 3 mol%-doped Ga₂O₃ were prepared by adding different mole ratios of SnO₂ powder to Ga₂O₃ powder, and β-Ga₂O₃ single crystals were grown by using an edge-defined Film-fed Growth (EFG) method. The crystal direction, crystal quality, optical, and electrical properties of the grown β-Ga₂O₃ single crystal were analyzed according to the Sn dopant content, and the property variation of β-Ga₂O₃ single crystal according to the Sn doping were extensively investigated.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.5
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• pp.492-501
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• 2013

In this paper, a multi polarization reconfigurable microstrip antenna that can be used selectively for four polarizations(vertical polarization, horizontal polarization, right hand circular polarization, left hand circular polarization) at the S-band is presented. The proposed antenna consists of four PIN diodes and a microstrip patch with a cross slot and a circular slot and is fed by utiliting electromagnetic coupling between the microstrip patch and the feed line. The proposed antenna has a DC bias network to supply DC voltage to each PIN diode and the polarization can be determined by controlling the ON /OFF states of four PIN diodes. The fabricated antenna has a VSWR below 2 in the vertical polarization(3.17~3.21 GHz), the horizontal polarization(3.16~3.20 GHz), the left hand circular polarization (3.08~3.19 GHz), and the right hand circular polarization(3.10~3.2 GHz) frequency bands. The designed antenna has the cross polarization level higher than 20 dB, a gain over 5 dBi for the linear polarization states, and 3 dB axial ratio bandwidth wider than 50 MHz in the circular polarization states.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.1
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• pp.42-49
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• 2018

In this paper, a dual-band microstrip-fed monopole antenna with a DGS(defected ground structure) for WLAN(wireless local area network) applications is presented. The antenna consists of a monopole and a defected ground, which were etched on both sides of the FR-4 substrate. The defected ground structure was used to obtain the dual band, while the step-by-step reduction in the monopole width was used to improve the impedance matching of the antenna. The antenna has an overall compact size of $44{\times}51{\times}1.6mm^3$, which was optimized by varying the size of the monopole and the ground plane such that it may resonate at the 2.4 GHz and 5 GHz bands of the WLAN. The measurement results showed that the antenna operates in the frequency band of 210 MHz(2.29~2.50 GHz) and 900 MHz(5.05~5.95 GHz) for a VSWR under 2, and showed omnidirectional radiation pattern at all desired frequencies.

• Korean Journal of Optics and Photonics
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• v.15 no.4
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• pp.375-384
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• 2004

Switching phenomenon of a three-waveguide optical coupler was analyzed by using the coupled mode theory, and the coupling-length of the device was calculated by means of the FDM. CPW traveling-wave electrodes were designed by the CMM and SOR simulation techniques so as to satisfy the conditions of phase-velocity and impedance matching. Traveling-wave modulators were fabricated on a z-cut LiNbO$_3$ substrate. Ti was in-diffused in LiNbO$_3$ to make waveguides and Au electrodes were built on the waveguides by the electroplating technique. Insertion loss and switching voltage of the optical modulator were about 4 ㏈ and 15.6V. Network analyzer was used to obtain S parameters and corresponding RF response. From the measurement, parameters of the traveling-wave electrodes were extracted as such Z$_{c}$=39.2 $\Omega$, Neff=2.48, and a0=0.0665/cm((GHz) (1/2)). The measured optical response R(w) was compared with the theoretically estimated and both responses were shown to agree well. The measurement results revealed that the ㏈ bandwidth turned out to be about 13 GHz.

• Journal of the Korea Organic Resources Recycling Association
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• v.27 no.4
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• pp.51-59
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• 2019

In this study, the influence of anaerobic digested sludge and 50 mM PBS (phosphate buffer solution) mixing ratio (1:1, 1:2, 1:3, 1:4, 1:5, 1:6, 1:7) on hydrogen production and inoculation period were examined. MECs were operated in fed-batch mode with an applied voltage of 0.9 V. As a result, in the 1:1 mixing ratio reactor, 9.8-20.9 mL of hydrogen was produced with the highest hydrogen content of 66.8-79.6%. Hydrogen gas production and power density increased from after 12 days of inoculation for the 1:1 mixing ratio reactor. In case of 1:2, 1:3 and 1:4 mixing ratio reactor, the hydrogen gas production was 3.7-7.1 mL and the hydrogen gas content was 5.8-65.8%. The hydrogen gas yield in 1:5, 1:6 and 1:7 ratio reactors, was 0.50-0.69 mL and hydrogen content range was 1.8-7.1%. The mixing ratio was found to be suitable for hydrogen production and inoculation period by mixing ratio up to 1:4.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.12
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• pp.16-21
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• 2007

In this paper, the dual-band voltage-controled oscillator (VCO) using the composite right/left-handed (CRLH) transmission line (TL) and the tunable negative resistance based on the fin diode is presented. It is demonstrated that the CRLH TL can lead to metamaterial transmission line with the dual-band tuning capability. The dual-band operation of the CRLH TL is achieved by the frequency offset and the phase slope of the CRLH TL, and the frequency ratio of the two operating frequencies can be a non-integer. Each frequency band of VCO has to operate independently, so we have used the tunable negative resistance based on the pin diode. When the forward bias has been into the pin diode, the phase noise of VCO is $-108.34\sim-106.67$ dBc/Hz @ 100 kHz in the tuning range, $2.423\sim2.597$ GHz, whereas when the reverse bias has been fed into the pin diode, that of VCO is $-114.16\sim-113.33$ dBc/Hz @ 100 kHz in the tuning range, $5.137\sim5.354$ GHz.