• Korean Journal of Materials Research
• /
• v.30 no.10
• /
• pp.566-572
• /
• 2020

In the recent years, thin film solar cells (TFSCs) have emerged as a viable replacement for crystalline silicon solar cells and offer a variety of choices, particularly in terms of synthesis processes and substrates (rigid or flexible, metal or insulator). Among the thin-film absorber materials, SnS has great potential for the manufacturing of low-cost TFSCs due to its suitable optical and electrical properties, non-toxic nature, and earth abundancy. However, the efficiency of SnS-based solar cells is found to be in the range of 1 ~ 4 % and remains far below those of CdTe-, CIGS-, and CZTSSe-based TFSCs. Aside from the improvement in the physical properties of absorber layer, enormous efforts have been focused on the development of suitable buffer layer for SnS-based solar cells. Herein, we investigate the device performance of SnS-based TFSCs by introducing double buffer layers, in which CdS is applied as first buffer layer and ZnMgO films is employed as second buffer layer. The effect of the composition ratio (Mg/(Mg+Zn)) of RF sputtered ZnMgO films on the device performance is studied. The structural and optical properties of ZnMgO films with various Mg/(Mg+Zn) ratios are also analyzed systemically. The fabricated SnS-based TFSCs with device structure of SLG/Mo/SnS/CdS/ZnMgO/AZO/Al exhibit a highest cell efficiency of 1.84 % along with open-circuit voltage of 0.302 V, short-circuit current density of 13.55 mA cm^-2, and fill factor of 0.45 with an optimum Mg/(Mg + Zn) ratio of 0.02.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.9
• /
• pp.735-744
• /
• 2000

The electrical procerties and stability of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Er$_2$O$_3$ (ZPCCE) based varistors were investigated in the Er$_2$O$_3$content range of 0.0 to 4.0 mol%. ZPCCE ceramics containing 2.0 mol% Er$_2$O$_3$ exhibited the highest density of 5.74 g/㎤ corresponding to 99.3% of theoretical density. The varistors with 0.5 mol% and 2.0 mol% Er$_2$O$_3$exhibited a relatively satisfying nonlinearity, which the nonlinear exponent is 40.50 and 47.15, respectively and the leakage current is 2.66 $mutextrm{A}$, respectively. Under more severe d.c. stress, such as (0.80 V$_{1mA}$/9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$115$^{\circ}C$/12h)+(0.90 V$_{1mA}$12$0^{\circ}C$/12h)+(0.95 V$_{1mA}$1$25^{\circ}C$12h), they showed a very excellent stability, which the variation rate of the variator voltage is -0.89% and -0.15%, the variation rate of the nonlinear coefficient is -4.67% and -3.56%, and the variation rate of leakage current is -6.02% and -19.56%, respectively. It is surely bellived that ZnO-0.5 mol% Pr$_{6}$O$_{11}$-1.0 mol% CoO-0.5 mol% Cr$_2$O$_3$-x mol% Er$_2$O$_3$(x=0.5, 2.0) based varistors will be greatly contributed to develop the advanced Pr$_{6}$O$_{11}$-based ZnO varistors in future.uture. future.uture.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2017.05a
• /
• pp.77-77
• /
• 2017

Titanium and its alloys offer attractive properties in a variety of applications. These are widely used for the field of biomedical implants because of its good biocompatibility and high corrosion resistance. Titanium anodizing is often used in the metal finishing of products, especially those can be used in the medical devices with dense oxide surface. Based on SAE/AMS (Society of Automotive Engineers/Aerospace Material Specification) 2488D, it has the specification for industrial titanium anodizing that have three different types of titanium anodization as following: Type I is used as a coating for elevated temperature forming; Type II is used as an anti-galling coating without additional lubrication or as a pre-treatment for improving adherence of film lubricants; Type III is used as a treatment to produce a spectrum of surface colours on titanium. In this study, we have focused on Type II anodization for the medical (dental and orthopedic) application, the anodized surface was modified with gray color under alkaline electrolyte. The surface characteristics were analyzed with Focused Ion Beam (FIB), Scanning Electron Microscopy (SEM), surface roughness, Vickers hardness, three point bending test, biocompatibility, and corrosion (potentiodynamic) test. The Ti-6Al-4V alloy was used for specimen, the anodizing procedure was conducted in alkaline solution (NaOH based, pH>13). Applied voltage was range between 20 V to 40 V until the ampere to be zero. As results, the surface characteristics of anodic oxide layer were analyzed with SEM, the dissecting layer was fabricated with FIB method prior to analyze surface. The surface roughness was measured by arithmetic mean deviation of the roughness profile (Ra). The Vickers hardness was obtained with Vickers hardness tester, indentation was repeated for 5 times on each sample, and the three point bending property was verified by yield load values. In order to determine the corrosion resistance for the corrosion rate, the potentiodynamic test was performed for each specimen. The biological safety assessment was analyzed by cytotoxic and pyrogen test. Through FIB feature of anodic surfaces, the thickness of oxide layer was 1.1 um. The surface roughness, Vickers hardness, bending yield, and corrosion resistance of the anodized specimen were shown higher value than those of non-treated specimen. Also we could verify that there was no significant issues from cytotoxicity and pyrogen test.

• Journal of Sensor Science and Technology
• /
• v.1 no.2
• /
• pp.173-181
• /
• 1992

Tantalum pentoxide($Ta_{2}O_{5}$) thin films on p-type (100) silicon wafer were fabricated by RF reactive sputtering. Physical properties and structure of the specimens were examined by XRD and AES. From the C-V analysis, the dielectric constant of $Ta_{2}O_{5}$ films was in the range of 10-12 in the reactive gas atmosphere in which 10% of oxygen gas is mixed. The ratio of Ta : 0 was 1 : 2 and 1 : 2.49 by AES and RBS examination, respectively. The heat-treatment at $700^{\circ}C$ in $O_{2}$ ambient led to induce crystallization. When the heat-treatment temperature was $1000^{\circ}C$, the dielectric constant was 20.5 in $O_{2}$ ambient and 23 in $N_{2}$ ambient, respectively. The crystal structure of $Ta_{2}O_{5}$ film was pseudo hexagonal of ${\delta}-Ta_{2}O_{5}$. The flat band voltage shift(${\Delta}V_{FB}$) of the specimens and the leakage current density were decreased for higher oxygen mixing ratio. The maximum breakdown field was 2.4MV/cm at the oxygen mixing ratio of 10%. The $Ta_{2}O_{5}$ films will be applicable to hydrogen ion sensitive film and gate oxide material for memory device.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.41 no.7
• /
• pp.665-671
• /
• 2017

The alkali-Metal Thermal-to-electric Converter (AMTEC) is one of the promising static energy conversion technologies for the direct conversion of thermal energy to electrical energy. The advantages over a conventional energy converter are its high theoretical conversion efficiency of 40% and power density of 500 W/kg. The working principle of an AMTEC battery is the electrochemical reaction of the sodium through an ion conducting electrolyte. Sodium ion pass through the hot side of the beta"-alumina solid electrolyte (BASE) primarily as a result of the pressure difference. This pressure difference across the BASE has a significant effect on the overall performance of the AMTEC system. In order to build the high pressure difference across the BASE, hermeticity is required for each joined components for high temperature range of $900^{\circ}C$. The AMTEC battery was manufactured by utilizing robust joining technology of BASE/insulator/metal flange interfaces of the system for both structural and electrical stability. The electrical potential difference between the anode and cathode sides, where the electrons emitted from sodium ionization and recombined into sodium, was characterized as the open-circuit voltage. The efforts of technological improvement were concentrated on a high-power output and conversion efficiency. This paper discusses about the joining and performance of the AMTEC systems.

• Journal of the Korean Vacuum Society
• /
• v.1 no.1
• /
• pp.43-49
• /
• 1992

RHEED apparatus which is one of the systems of surface structure analysis has been constructed.Electron beam is focused by means of magnetic lens, and the beam divergence is about $1{\times}10^{-3}$ rad. The Acceleration voltage of this RHEED apparatus is continuously variable from 0 to 20 kV. K and Cs-adsorbed structureson Si(111)$7{\times}7$ surface at room and high temperatures($200{\times}700^{\circ}C$) have been investigated by RHEED. It is observed that the K and Cs-adsorbed Si(111)surface structures at saturation coverage are Si(111)$7{\tiems}7-K$ and Si(111)$1{\tiems}1-Cs$ at room temperature, respectively. When the specimen temperature was elevated during evaporation,the $3{\times}1$ structure appears in the range of temperature between $300^{\circ}C$ and $550^{\circ}C$, and the $1{\tiems}1$ structure appears above $550^{\circ}C$ in K/Si(111)system. Also, in Cs/Si(111) system the $\sqrt{3}{\times}\sqrt{3}$ structure appears at $300^{\circ}C$, and the $\sqrt{3}{\times}\sqrt{3}+3{\times}1$ structure appears between $350^{\circ}C$ and $400^{\circ}C$.

• Journal of the Korean Ceramic Society
• /
• v.51 no.4
• /
• pp.271-277
• /
• 2014

To overcome the limitations of the solid oxide fuel cells (SOFCs) due to the high temperature operation, there has been increasing interest in proton conducting fuel cells (PCFCs) for reduction of the operating temperature to the intermediate temperature range. In present work, the perovskite $BaCe_{0.85-x}Zr_xY_{0.15}O_{3-\delta}$ (BCZY, x = 0.1, 0.3, 0.5, and 0.7) were synthesized via solid state reaction (SSR) and adopted as an electrolyte materials for PCFCs. Powder characteristics were examined using X-ray diffraction (XRD), thermogravimetric analysis (TGA) and Brunauer, Emmett and Teller (BET) surface area analysis. Single phase BCZY were obtained in all compositions, and chemical stability was improved with increasing Zr content. Anode-supported cell with $Ni-BaCe_{0.55}Z_{0.3}Y_{0.15}O_{3-\delta}$ (BCZY3) anode, BCZY3 electrolyte and BCZY3-$Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-\delta}$ (BSCF) composite cathode was fabricated and electrochemically characterized. Open-circuit voltage (OCV) was 1.05 V, and peak power density of 370 ($mW/cm^2$) was achieved at $650^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.8
• /
• pp.667-674
• /
• 2000

The stability of ZnO-Pr$_{6}$/O$_{11}$-CoO-Er$_{2}$/O$_3$based varistors was investigated with Er$_{2}$/O$_3$additive content of the range 0.0 to 2.0 mol%. All varistors sintered at 130$0^{\circ}C$ exhibited the thermal runaway within short times even under weak d.c. stress. As a result these varistors were completely degraded. On the contrary the stability of varistors sintered at 135$0^{\circ}C$ was far better than that of 130$0^{\circ}C$. In particular the varistors added with 0.5mol% Er$_{2}$/O$_3$ which the nonlinear exponent is 34.83 and the leakage current is 7.38 $mutextrm{A}$ showed a excellent stability which the variation rate of the varistors voltage the nonlinear coefficient and the leakage current is below 1%, 2%, and 3.5% respectively even under more severe d.c. stress such as (0.80 V$_{1mA}$9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$115$^{\circ}C$/12h)+(0.90 V$_{1mA}$12$0^{\circ}C$12h) Consequently it is estimated that the ZnO-0.5 mol% Pr$_{6}$/O sub 11/-1.0 mol% CoO-0.5 mol% Er$_{2}$/O sub 3/ based varistors will be used to develop the advanced Pr$_{6}$/O$_{11}$-1.0 mol% CoO-0.5 mol% Er$_{2}$/O$_{3}$ based varistors will be used to develop the advanced Pr$_{6}$/O$_{11}$-based ZnO varistors having the high performance and stability in future. future.ure. future.

• Journal of the Korean Society for Railway
• /
• v.20 no.2
• /
• pp.203-209
• /
• 2017

Research on condition monitoring and diagnosis of power facilities has been conducted to improve the safety and reliability of electric power supply. Although insulation diagnostic techniques for unit equipment such as gas-insulated switchgears and transformers have been developed rapidly, studies on monitoring of cables have only included aspects such as whether defects exist and partial discharge (PD) detection; other characteristics and features have not been discussed. Therefore, this paper dealt with PD characteristics against void sizes and positions, and with defect localization in XLPE cable. Four types of defects with different sizes and positions were simulated and PD pulses were detected using a high frequency current transformer (HFCT) with a frequency range of 150kHz~30MHz. The results showed that the apparent charge increased when the defect was adjacent to the conductor; the pulse count in the negative half of the applied voltage was about 20% higher than that in the positive half. In addition, the defect location was calculated by time-domain reflectometry (TDR) method, it was revealed that the defect could be localized with an error of less than1m in a 50m cable.

• Journal of electromagnetic engineering and science
• /
• v.1 no.1
• /
• pp.73-77
• /
• 2001

We studied the fabrication of GaAs-based pseudomorphic high electron mobility transistors(PHEMT`s) for the purpose of millimeter- wave applications. To fabricate the high performance GaAs-based PHEMT`s, we performed the simulation to analyze the designed epitaxial-structures. Each unit processes, such as 0.1 m$\mu$$\Gamma$-gate lithography, silicon nitride passivation and air-bridge process were developed to achieve high performance device characteristics. The DC characteristics of the PHEMT`s were measured at a 70 $\mu$m unit gate width of 2 gate fingers, and showed a good pinch-off property ($V_p$= -1.75 V) and a drain-source saturation current density ($I_{dss}$) of 450 mA/mm. Maximum extrinsic transconductance $(g_m)$ was 363.6 mS/mm at $V_{gs}$ = -0.7 V, $V_{ds}$ = 1.5 V, and $I_{ds}$ =0.5 $I_{dss}$. The RF measurements were performed in the frequency range of 1.0~50 GHz. For this measurement, the drain and gate voltage were 1.5 V and -0.7 V, respectively. At 50 GHz, 9.2 dB of maximum stable gain (MSG) and 3.2 dB of $S_{21}$ gain were obtained, respectively. A current gain cut-off frequency $(f_T)$ of 106 GHz and a maximum frequency of oscillation $(f_{max})$ of 160 GHz were achieved from the fabricated PHEMT\\`s of 0.1 m$\mu$ gate length.h.