• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1993년도 하계학술대회 논문집 B
• /
• pp.1265-1267
• /
• 1993

The switching and the retention characteristics with the injection conditions(pulse height and pulse width) were investigated in the nonvolatile MNOS memories with thin oxide layer of $23{\AA}$ thick. The shift of flatband voltage was measured using the fast ramp C-V method and experimental results were analized using the previously developed models. It was shown that the experimental results were described quit well by the trap-assisted and modified Fowler-Nordheim tunneling models for the voltage pulse of $15V{\sim}19V,\;24V{\sim}25V$, respectively. However, the direct tunneling model was agreement with experimental values in all range of pulse height. As increasing the initial shift of the flatband voltage, the decay rate was increased. But for the same initial shift of the flatband voltage, the decay rate was smaller for low and long pulse than for high and short one.

• 한국정보통신학회논문지
• /
• 제5권2호
• /
• pp.303-308
• /
• 2001

본 연구의 목적은 방사선 펄스의 고안정 계측회로 및 분석시스템 개발에 있다. 제안한 시스템은 중성자 및 감마선 검출회로, 프로그래머블 고전압 공급장치 및 DSP로 구성된다. 프로그래머블 고전압 공급장치는 입력전압 5V에서 150V까지 조정할 수 있도록 하였으며 직렬의 전압 안정화 회로를 부가하여 일정한 전압이 유지되도록 함으로써 고전압 공급장치의 전압 변동율은 1.63%이하로 얻을 수 있었다. 방사선 검출회로는 능동성 적분기, 폴-제로 회로, 증폭도 60dB의 3단 증폭회로로 구성되며, 주파순 대역은 37 Hz~300 kHz이다. 또한 파고분포의 계수는 방사선 펄스의 분석에 중요한 자료로 본 연구에서는 A/D 컨버터(12bit 100㎱) 및 고속의 DSP(TMS320C31-60)을 이용하여 PC-기반으로 구현되는 파고분석 시스템을 구성하였다.

• 대한전기학회논문지
• /
• 제32권8호
• /
• pp.277-283
• /
• 1983

The pulse generating circuit system of the so-called turbulently-heated theta pinch is experimentally investigated, and its results are compared with the predictions based on the conventional theory. The conventional theory assumes that the impedance of the pinch coil is independent on the time rate of change in voltage (or current) across the pinch coil. The experimental pulse height of the voltage actross the pinch coil is about 1.5% fo that predicted by the conventional theory.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2009년도 제40회 하계학술대회
• /
• pp.1410_1411
• /
• 2009

본 연구에서는 고전압·방전, Laser Beam, Plasma 공학분야 등에 있어서 중요한 현상 중의 하나로 대두되고 있는 Pulse Power 현상과 관련하여 고전압 단 펄스 발생장치(Pulse Width =10 ns, Pulse Height = 3kV) 시스템을 제작 하였다.

• Journal of Welding and Joining
• /
• 제6권2호
• /
• pp.47-55
• /
• 1988

This paper reports on a study of the influence of welding variables on the weld shape of Al-7020 in pulse-GMA welding. Five variables, i.e., wire feed rate, peak pulse current, welding speed, welding votage, and pulse frequency were investigated for their effects on the weld shape. From the results of the 2$^{n-1}$ fractional factorial design, quantitative effects of each variable and the interaction of two variables were obtained, and consequently wire feed rate, welding voltage, and welding speed were determined as the main welding variables. Supplementary experiment was performed for ivestigating the detailed relationship between the main variables nd the seld shape. In this experiment, the penetation of the seldment increased when the wire feed rate was raised, nad the bead width increased when the welding voltage was raised or the welding speed was reduced.d.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
• /
• pp.704-707
• /
• 1999

Partial discharge(PD) in air insulated electric power systems is responsible for considerable power lossesfrom high voltage transmission lines. PD in air often leads to deterioration of insulation by the combined action of the discharge ions bombarding the surface and the action of chemical compounds that are formed by the discharge and may give rise to interference in ommunication systems. PD can indicate incipient failure. Thus understanding and classification of PD in air is very important to discern source of PD. In this paper, we investigated PD in air by using statical method. We classified air discharge with corona, surface discharge and cavity discharge by source of discharge. we used the mean pulse-height phase distribution $H_{qmean}(\psi)$, the max pulse-height phase distribution $H_{qmax}(\psi)$ , the pulse count phase distribution $H_n(\psi)$ and the max pulse height vs. repetition rate $H_{q}(n)$ for analysis PD pattern. We used statistical operators, such as skewness(S+. S-1, kurtosis(K+, K-), mean phase(AP+. AP-), cross-correlation factor(CC) and asymmetry from the distribution.

• 한국정보통신학회:학술대회논문집
• /
• 한국해양정보통신학회 2001년도 춘계종합학술대회
• /
• pp.465-468
• /
• 2001

An objection of this study is to develop a high stable analytic system of radioactive pulses. The proposed system consists of an amplifying circuit with 60dB gain, a programmable power supply unit which can generate DC voltage up to 1, 500V, and a digital signal processor. Pulse height distribution in accordance with pulse counts is important data in analyzing radioactive pulses. In this study, AD convertor (12bit, l00ns) and DSP (TMS 320C31-60) are used to analyze the pulse height, and the analytic system is designed to be operated in PC-networking.

• 대한전자공학회논문지
• /
• 제8권2호
• /
• pp.24-33
• /
• 1971

부성특성회로로서 쌍트랜지스터 회가의 양에미터단자사이에 용량 C와 저항 R의 병렬회로를 삽입하고, 표준화주파수의 단형파전류원를 에미터·바이어스전류원으로 하여 쌍회로를 구동하면, RC병렬회로는 정부변조회로의 적분회로로서 동작시킬 수 있다. 이 적분회로와 직렬로 신호파전압원을 접속시키면 쌍회로가 구동전원의 표준화펄스에 의하여 구동될 때 마다, RC 적분회로의 적분전압과 신호파전압이 서로 비교되기 때문에 그들의 차전압에 의하여 쌍회로의 트랜지스터들 중의 어느 한 쪽이 ON되기 때문에 그 베이스결합저항단자에는 one bit의 펄스가 송출된다. 본실험에서는 극히 간소한 회로구성을 갖는 쌍트랜지스터회로에 의한 정착변조회로를 제시하고 그들의 특성을 부기하였다. 정착변조파의 품질 혹은 S/N비의 향상을 위하여 고려하여야 할 문제로서, 적분회로의 회로정수 및 양자화전압의 구동펄스의 파고와 파폭의 관계를 검토한다.

• 약학회지
• /
• 제27권1호
• /
• pp.1-10
• /
• 1983

Voltammetric deposition and differential pulse anodic stripping (DPASV) of Ge(IV)at a gold electrode was investigated. Germanium (IV) exhibits two stripping peaks by DPASV in sodium borate solution, the first peak at about -1.1v. vs SCE and the second one, in the range of -0.6 to -0.2v. vs SCE. Factors affecting the sensitivity and precision included the nature of working electrode, supporting electrolytes, deposition potential, deposition time, pH, pulse height, voltage scan rate. The relative standard deviation of the measurements of the peak currents, for 100ng/ml Ge(IV), was less than ${\pm}3%$. The detection limit of Ge(IV) was 0.01ng/ml. Percent recovery in the extraction procedure of Ge(IV) from matrices by benzene in c-HCl, followed by back extraction with saturated borax solution, ranged from 96 to 104%.

• Nuclear Engineering and Technology
• /
• 제51권3호
• /
• pp.731-737
• /
• 2019

In this study, a new measurement method based on voltage transients in CdZnTe detectors response to low energy photon irradiations is applied to measure the electron mobility (${\mu}_e$) and electron mobility-lifetime product $({\mu}{\tau})_e$ in a CdZnTe detector. In the proposed method, the pulse rise times are derived from low energy photon response to 59.5 keV($^{241}Am$), 88 keV($^{109}Cd$) and 122 keV($^{57}Co$) ${\gamma}-rays$ for the irradiation of the cathode surface at each detector for different bias voltages. The electron $({\mu}{\tau})_e$ product was then determined by measuring the variation in the photopeak amplitude as a function of bias voltage at a given photon energy using a pulse-height analyzer. The $({\mu}{\tau})_e$ values were found to be $(9.6{\pm}1.4){\times}10^{-3}cm^2V^{-1}$ for $1000mm^3$, $(8.4{\pm}1.6){\times}10^{-3}cm^2V^{-1}$ for $1687.5mm^3$ and $(7.6{\pm}1.1){\times}10^{-3}cm^2V^{-1}$ for $2250mm^3$ CdZnTe detectors. Those results were then compared with the literature $({\mu}{\tau})_e$ values for CdZnTe detectors. The present results indicate that, the electron mobility ${\mu}_e$ and electron $({\mu}{\tau})_e$ values in CdZnTe detectors can be measured easily by applying voltage transients response to low energy photons, utilizing a fast signal acquisition and data reduction and evaluation.