• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1265-1267
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• 1993

The switching and the retention characteristics with the injection conditions(pulse height and pulse width) were investigated in the nonvolatile MNOS memories with thin oxide layer of $23{\AA}$ thick. The shift of flatband voltage was measured using the fast ramp C-V method and experimental results were analized using the previously developed models. It was shown that the experimental results were described quit well by the trap-assisted and modified Fowler-Nordheim tunneling models for the voltage pulse of $15V{\sim}19V,\;24V{\sim}25V$, respectively. However, the direct tunneling model was agreement with experimental values in all range of pulse height. As increasing the initial shift of the flatband voltage, the decay rate was increased. But for the same initial shift of the flatband voltage, the decay rate was smaller for low and long pulse than for high and short one.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.2
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• pp.303-308
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• 2001

An objection of this study is to develop a high stable measuring circuits and a analytic system for radioactive pulses. The proposed system consists of a pulse detection units for neutrons and gamma-rays a programmable high voltage supply unit and a digital signal processor. The programmable high voltage supply unit designed can generate DC voltage up to 1,500 V at 5 V input and have a series voltage regulator to maintain the output voltage constantly, resulting in less than 1.63% of voltage regulation. The pulse detection parts consists of an active integrator, a pole-zero circuit, and a 3-stage amplifier of 60 dB, and its frequency bandwidth is from 37 Hz to 300 kHzAlso, pulse height distribution in accordance with pulse counts is important data in analyzing radioactive pulses. In this study, A/D convertor (12bit, 100ms) and DSP (TMS320C31-60) are used to analyze the pulse height, and the analytic system is designed to be operated in PC-base.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.32 no.8
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• pp.277-283
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• 1983

The pulse generating circuit system of the so-called turbulently-heated theta pinch is experimentally investigated, and its results are compared with the predictions based on the conventional theory. The conventional theory assumes that the impedance of the pinch coil is independent on the time rate of change in voltage (or current) across the pinch coil. The experimental pulse height of the voltage actross the pinch coil is about 1.5% fo that predicted by the conventional theory.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1410_1411
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• 2009

본 연구에서는 고전압·방전, Laser Beam, Plasma 공학분야 등에 있어서 중요한 현상 중의 하나로 대두되고 있는 Pulse Power 현상과 관련하여 고전압 단 펄스 발생장치(Pulse Width =10 ns, Pulse Height = 3kV) 시스템을 제작 하였다.

• Journal of Welding and Joining
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• v.6 no.2
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• pp.47-55
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• 1988

This paper reports on a study of the influence of welding variables on the weld shape of Al-7020 in pulse-GMA welding. Five variables, i.e., wire feed rate, peak pulse current, welding speed, welding votage, and pulse frequency were investigated for their effects on the weld shape. From the results of the 2$^{n-1}$ fractional factorial design, quantitative effects of each variable and the interaction of two variables were obtained, and consequently wire feed rate, welding voltage, and welding speed were determined as the main welding variables. Supplementary experiment was performed for ivestigating the detailed relationship between the main variables nd the seld shape. In this experiment, the penetation of the seldment increased when the wire feed rate was raised, nad the bead width increased when the welding voltage was raised or the welding speed was reduced.d.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.704-707
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• 1999

Partial discharge(PD) in air insulated electric power systems is responsible for considerable power lossesfrom high voltage transmission lines. PD in air often leads to deterioration of insulation by the combined action of the discharge ions bombarding the surface and the action of chemical compounds that are formed by the discharge and may give rise to interference in ommunication systems. PD can indicate incipient failure. Thus understanding and classification of PD in air is very important to discern source of PD. In this paper, we investigated PD in air by using statical method. We classified air discharge with corona, surface discharge and cavity discharge by source of discharge. we used the mean pulse-height phase distribution $H_{qmean}(\psi)$, the max pulse-height phase distribution $H_{qmax}(\psi)$ , the pulse count phase distribution $H_n(\psi)$ and the max pulse height vs. repetition rate $H_{q}(n)$ for analysis PD pattern. We used statistical operators, such as skewness(S+. S-1, kurtosis(K+, K-), mean phase(AP+. AP-), cross-correlation factor(CC) and asymmetry from the distribution.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.05a
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• pp.465-468
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• 2001

An objection of this study is to develop a high stable analytic system of radioactive pulses. The proposed system consists of an amplifying circuit with 60dB gain, a programmable power supply unit which can generate DC voltage up to 1, 500V, and a digital signal processor. Pulse height distribution in accordance with pulse counts is important data in analyzing radioactive pulses. In this study, AD convertor (12bit, l00ns) and DSP (TMS 320C31-60) are used to analyze the pulse height, and the analytic system is designed to be operated in PC-networking.

• Journal of the Korean Institute of Telematics and Electronics
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• v.8 no.2
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• pp.24-33
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• 1971

A noble method of delta modulation by means of pair transistor circuit having negative resistance charcteristic is presented. An RC parallel circuit is inserted between two eiuitter tarminals of the pair transistor circuit, and their emitters are driven by a square pulsed current source. Basically this is a relaxation oscillator circuit. But when the value of capacitors and resistanc R, and the pulse height of driving source are properly chosen, the RC parallel circuit apparently functions as integrating circuit of driviving pulses. Compared with the integrated voltage of capacitor C, a signal input voltatage supplied in series with RC parallel circuit between two emitters makes on or off either of the pair transistors. as the result, one bit pulse is sent out from the coupling resistance terminal of conducted transistor. The circuit diagram used for this experiment is presented, it i% composed with simple mod ulster circuit, differential amplifier and pulse shaping amplifier, The characteristics of the components of this ciruit are discussed, and especially quantumized noise in this delta modulation system is discussed in order to improve the signal to noise ratio which has a close relation with circut constants, quantumized voltage, pulse height and width of driving current source.

• YAKHAK HOEJI
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• v.27 no.1
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• pp.1-10
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• 1983

Voltammetric deposition and differential pulse anodic stripping (DPASV) of Ge(IV)at a gold electrode was investigated. Germanium (IV) exhibits two stripping peaks by DPASV in sodium borate solution, the first peak at about -1.1v. vs SCE and the second one, in the range of -0.6 to -0.2v. vs SCE. Factors affecting the sensitivity and precision included the nature of working electrode, supporting electrolytes, deposition potential, deposition time, pH, pulse height, voltage scan rate. The relative standard deviation of the measurements of the peak currents, for 100ng/ml Ge(IV), was less than ${\pm}3%$. The detection limit of Ge(IV) was 0.01ng/ml. Percent recovery in the extraction procedure of Ge(IV) from matrices by benzene in c-HCl, followed by back extraction with saturated borax solution, ranged from 96 to 104%.

• Nuclear Engineering and Technology
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• v.51 no.3
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• pp.731-737
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• 2019

In this study, a new measurement method based on voltage transients in CdZnTe detectors response to low energy photon irradiations is applied to measure the electron mobility (${\mu}_e$) and electron mobility-lifetime product $({\mu}{\tau})_e$ in a CdZnTe detector. In the proposed method, the pulse rise times are derived from low energy photon response to 59.5 keV($^{241}Am$), 88 keV($^{109}Cd$) and 122 keV($^{57}Co$) ${\gamma}-rays$ for the irradiation of the cathode surface at each detector for different bias voltages. The electron $({\mu}{\tau})_e$ product was then determined by measuring the variation in the photopeak amplitude as a function of bias voltage at a given photon energy using a pulse-height analyzer. The $({\mu}{\tau})_e$ values were found to be $(9.6{\pm}1.4){\times}10^{-3}cm^2V^{-1}$ for $1000mm^3$, $(8.4{\pm}1.6){\times}10^{-3}cm^2V^{-1}$ for $1687.5mm^3$ and $(7.6{\pm}1.1){\times}10^{-3}cm^2V^{-1}$ for $2250mm^3$ CdZnTe detectors. Those results were then compared with the literature $({\mu}{\tau})_e$ values for CdZnTe detectors. The present results indicate that, the electron mobility ${\mu}_e$ and electron $({\mu}{\tau})_e$ values in CdZnTe detectors can be measured easily by applying voltage transients response to low energy photons, utilizing a fast signal acquisition and data reduction and evaluation.