• Title/Summary/Keyword: Voltage drops

검색결과 101건 처리시간 0.028초

반도체형 열중성자 선량 측정센서 개발 (The development of a thermal neutron dosimetry using a semiconductor)

  • 이남호;김양모
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 학술회의 논문집 정보 및 제어부문 B
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    • pp.789-792
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    • 2003
  • pMOSFET having 10 ${\mu}um$ thickness Gd layer has been tested to be used as a slow neutron sensor. The total thermal neutron cross section for the Gd is 47,000 barns and the cross section value drops rapidly with increasing neutron energy. When slow neutrons are incident to the Gd layer, the conversion electrons are emitted by the neutron absorption process. The conversion electrons generate electron-hole pairs in the $SiO_2$ layer of the pMOSFET. The holes are easily trapped in Oxide and act as positive charge centers in the $SiO_2$ layer. Due to the induced positive charges, the threshold turn-on voltage of the pMOSFET is changed. We have found that the voltage change is proportional to the accumulated slow neutron dose, therefore the pMOSFET having a Gd nuclear reaction layer can be used for a slow neutron dosimeter. The Gd-pMOSFET were tested at HANARO neutron beam port and $^{60}CO$ irradiation facility to investigate slow neutron response and gamma response respectively. Also the pMOSFET without Gd layer were tested at same conditions to compare the characteristics to the Gd-pMOSFET. From the result, we have concluded that the Gd-pMOSFET is very sensitive to the slow neutron and can be used as a slow neutron dosimeter. It can also be used in a mixed radiation field by subtracting the voltage change value of a pMOSFET without Gd from the value of the Gd-pMOSFET.

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민감한 전기전자기기의 전압외란에 대한 영향 최소화 연구 (A Research to Minimizing the Effect of Voltage Disturbances on Sensitive Electrical and Electronic Equipment)

  • 윤갑구
    • 기술사
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    • 제19권2호
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    • pp.10-20
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    • 1986
  • 전압외란(voltage disturbances)에 대하여 민감함 전기전자기기가 받는 영향을 최소화하기 위한 방안으로 전력공급자측에서의 대책과 수용가기기에서의 대응책에 대하여 조사연구하였다. 전력공급자에서의 대책으로는 전압강하 시간의 단축에 대하여 검토하였는데, 효과와 경제성으로 보아 실현가능성이 적었다. 수용가기기에서의 대응책으로는 컴퓨터제어(computer control)와 자동화시스템(automated systems) 등에는 무정전 전원장치 또는 노이즈 서프레서(noise suppressor)나 파워콘디쇼너(power conditioners)를 설치하고, 전자개폐기는 지연석방형 전자개폐기를 채용하며, 가변속제어전동기에는 순간전압부하에 대한 대책이 고려된 제어회로를 채용하고, 고압방전등에는 순간재점등장치가 붙은 등기구를 채용하며, 부족전압계전기는 계전기의 정전시감을 연장하는 방안과 순간정전시에는 자동으로 재투입하는 sequence를 구성하는 방법등이 효과적인 대책으로 검토되었다.

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An Enhanced Instantaneous Circulating Current Control for Reactive Power and Harmonic Load Sharing in Islanded Microgrids

  • Lorzadeh, Iman;Abyaneh, Hossein Askarian;Savaghebi, Mehdi;Lorzadeh, Omid;Bakhshai, Alireza;Guerrero, Josep M.
    • Journal of Power Electronics
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    • 제17권6호
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    • pp.1658-1671
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    • 2017
  • To address the inaccurate load demand sharing problems among parallel inverter-interfaced voltage-controlled distributed generation (DG) units in islanded microgrids (MGs) with different DG power ratings and mismatched feeder impedances, an enhanced voltage control scheme based on the active compensation of circulating voltage drops is proposed in this paper. Using the proposed strategy, reactive power and harmonic currents are shared accurately and proportionally without knowledge of the feeder impedances. Since the proposed local controller consists of two well-separated fundamental and harmonic voltage control branches, the reactive power and harmonic currents can be independently shared without having a remarkable effect on the amplitude or quality of the DGs voltage, even if nonlinear (harmonic) loads are directly connected at the output terminals of the units. In addition, accurate load sharing can also be attained when the plug-and-play performance of DGs and various loading conditions are applied to MGs. The effects of communication failures and latency on the performance of the proposed strategy are also explored. The design process of the proposed control system is presented in detail and comprehensive simulation studies on a three-phase MG are provided to validate the effectiveness of the proposed control method.

고전압 펄스 발생기를 위한 강유전체의 전압 출력 특성 (The Characteristics of the Output Voltage Ferroelectrics for High Voltages Pulse Generators)

  • 장동관;최순호;황선묵;허창수
    • 전기학회논문지
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    • 제62권10호
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    • pp.1408-1412
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    • 2013
  • High power pulse generating technology is to accumulate the energy for relatively long and then to create a strong force by emitting the energy very fast. High power pulse generating technology has recently been using in various fields like environments, industry, research, military and so on. Numerous studies about high power pulse generators have already been performed and commercialized in various conditions. However, in aspect of their size and weight, it is hard to carry the generators which currently have been developed. For these reasons, din nations like America or Russia, the researches have been performed for Ferroelectric Generators(FEG), which have relatively simple structure and are economical. To realize the ferroelectric generator, in this study, we selected the PZTs which have different physical properties respectively, and then shocked them using explosives. The PZT samples with volumes of $0.31{\sim}0.94cm^3$ were depolarized by shocked and produced the waveform that have peak voltages of 4.28 ~ 15kV. The lowest relative permittivity sample generated much higher peak voltage. And sudden voltage drops which seem to be caused by dielectric breakdown were observed in some experiments using low young's modulus samples. Also, increase in thickness led to increase in peak voltage, but the ratio of the voltage rise did not reach the ration of the thickness increase.

3개의 스위치를 이용한 벅-부스트 컨버터 설계 (A Design of Three Switch Buck-Boost Converter)

  • 구용서;정준모
    • 전기전자학회논문지
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    • 제14권2호
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    • pp.82-89
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    • 2010
  • 본 논문에서는 기존의 벅-부스트 컨버터의 효율 보다 높은 효율을 갖는 세 개의 DTMOS 스위칭 소자를 사용한 벅-부스트 컨버터를 제안하였다. 낮은 온-저항을 갖는 DTMOS 스위칭 소자를 사용하여 전도 손실을 줄이도록 설계하였다. DTMOS 스위칭 소자의 문턱 전압은 게이트 전압이 증가함에 따라 감소하고 그 결과 표준 MOSFET보다 전류 구동 능력이 높다. 제안한 컨버터는 넓은 출력 전압 범위와 높은 전류 레벨에서 높은 전력 변환 효율을 갖기 위해 PWM 제어법을 이용하였다. 제안한 컨버터는 최대 출력전류 300mA, 입력 전압 3.3V, 출력 전압 700mV~12V, 1.2MHz의 스위칭 주파수, 최대 효율 90% 갖는다. 1mA이하의 대기모드에서도 높은 효율을 구현하기 위하여 LDO를 설계하였다.

인가 전압 형태 및 온도에 따른 $C_{22}$-Quinolium(TCNQ) LB막의 전기적 특성 (Electrical properties of $C_{22}$-Quinolium(TCNQ) LB films depending on a type of applied voltage and temperature)

  • 송일석;유덕선;김영관;김태완;강도열
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1993년도 하계학술대회 논문집 B
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    • pp.1193-1196
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    • 1993
  • Electrical properties of $C_{22}$-Quinolium(TCNQ) Langmuir-Blodgett(LB) films are reported depending on a type of applied voltage on a type of applied voltage and temperature. A conductivity was identified to be anisotropic with a ratio of ${\sigma}||/{\sigma}{\bot}{\simeq}10^7$ at room temperature. The I-V characteristics along the film surface direction show an ohmic behavior up to a few hundred volts. But the I-V characteristics in the vertical direction display an ohmic behavior for low-electric field, and a nonohmic behavior for high-electric field. This nonohmic behavior has already been interpreted as a conduction mechanism of space-charge limited current and Schottky effect near the electric-field strengh of $10^6$ V/cm. When the electric field exceeds further, there is anormalous phenomia similiar to breakdown. From the study of I-V characteristics with the application of step or pulse voltage, we have found that the breakdown voltage shifts to higher one as the step or pulse interval becomes shorter. These results indicate that the breakdown is due to both electrical and thermal effect. To see the infulence of temperature, current was measured as function of temperature with several bias voltages, which are lower than that of breakdown. It shows that the current increases about 3 orders of magnitude near $60{\sim}70^{circ}C$, and remains constant for a while up to $140^{\circ}C$ and then suddenly drops. Arahidic acid was used to cmpare with $C_{22}$-Quinolium(TCNQ) LB films.

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보리새우의 전기 어법 (ELECTRICAL FISHING METHOD OF PENAEUS JAPONICUS BATE)

  • 고관서;김상한;윤갑동
    • 한국수산과학회지
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    • 제5권4호
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    • pp.115-120
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    • 1972
  • The data Presented in this Paper, on the body and Jumping voltage of Penaeus japonicus BATE, are part of a current study on shrimp behaviour in order to improve fishing efficiency of the fishing gear. The experiments concerning electrical stimuli was mostly carried out at the Marine Laboratory of Busan Fisheries College in 1972. The following are the results obtained from the present investigations : 1. When the voltages between a pair of electrodes were fixed constant, the voltage drops between them showed almost constant electrical field. 2. Threshold voltages of the animals varied with body direction to the electrical field, i. e., 200 -500 mV for parallel, 500-1400 mV for vertical and 300-800 mV for diagonal ($45^{\circ}$) settings. 3. Jumping voltages of the animals also varied with the body direction to the electrical field; i. e., 250-1000 mV for parallel, 800-2500 mV for vertical and 400-1300 mV for diagonal settings. 4. The shrimp, in general, were more sensitive to the electrical stimuli when oriented to the cathode rather than the anode. 5. Jumping voltages decreased when the interrupted current was applied to the animals, i. e., less than 200 mV for paralled and 500mV for vertical direction of the body to the electrical field.

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배전시스템 전기설비 구성에 따른 확률론적 전력품질의 정량적 평가기법 개발 (The Development of Probabilistic Power Quality Evaluation Method for Electrical Distribution System)

  • 김용하;이성준;우성민;임현성;손승기;구민서
    • 조명전기설비학회논문지
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    • 제21권8호
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    • pp.34-43
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    • 2007
  • 본 연구에서는 배전시스템 안정성의 요소라 할 수 있는 고조파, 전압변동, Sag/Swell, 신뢰도의 측면에서 배전시스템을 전력품질 측면에서 안정성을 종합적으로 평가하는 방법을 개발하였다. 시스템이 전력품질의 측면에서 얼마나 안정적인가를 정량적으로 평가하기 위해서 AHP(Analytic Hierarchy Process)를 사용하여 종합 전력품질 통합지수를 산정하는 방법을 제안하였다. 또한 몬테카를로 시뮬레이션을 수행함으로서 사고를 고려한 배전계통의 안정성을 평가하였다.

p+링과 p 채널 게이트를 갖는 역채널 LIGBT의 전기적인 특성 (Electrical Characteristics of Novel LIGBT with p Channel Gate and p+ Ring at Reverse Channel Structure)

  • 강이구;성만영
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제51권3호
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    • pp.99-104
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    • 2002
  • lateral insulated gate bipolar transistors(LIGBTs) are extensively used in high voltage power IC application due to their low forward voltage drops. One of the main disadvantages of the LIGBT is its scow switching speed when compared to the LDMOSFET. And the LIGBT with reverse channel structure is lower current capability than the conventional LIGBT at the forward conduction mode. In this paper, the LIGBT which included p+ ring and p-channel gate is presented at the reverie channel structure. The presented LIGBT structure is proposed to suppress the latch up, efficiently and to improve the turn off time. It is shown to improve the current capability too. It is verified 2-D simulator, MEDICI. It is shown that the latch up current of new LIGBT is 10 times than that of the conventional LIGBT Additionally, it is shown that the turn off characteristics of the proposed LIGBT is i times than that of the conventional LIGBT. It is net presented the tail current of turn off characteristics at the proposed structure. And the presented LIGBT is not n+ buffer layer because it includes p channel gate and p+ ring.

수력발전기 고정자 노후권선의 모의결함 시편에 대한 부분방전 파라미터 변화 분석 (Analysis of Parameters on Partial Discharges from Insulation Defects of used Hydro Generator Stator Windings)

  • 오봉근;김현일;강성화;임기조
    • 한국전기전자재료학회논문지
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    • 제20권7호
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    • pp.645-649
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    • 2007
  • Partial discharge(PD) test for simulated insulation defects of used hydro generator stator winding was conducted to analyze the PD Parameters. Simulated insulation defects are classified by 5 types corona, slot, internal, multi and aging defect. Phase resolved partial discharge, statistical parameter (skewness, kurtosis), PD magnitude as a function of the test voltage(Q-V curve) and PD magnitude change under test voltage for 2 minutes are used as PD parameters. The analysis of PD parameters by 4 types are proved to be useful methods. In particular, PD parameter characteristics of aging defect could help to assess the aging condition of stator winding because aging defect has more weak insulation strength than other insulation defects : PD distribution is wide and flat, PD rises rapidly near $0^{\circ}\;and\;180^{\circ}$ and Q-V curve rises sharply and then gently drops.