• Title/Summary/Keyword: Voltage drop

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Analysis of Voltage Drop under Extended Feeding in KyungBu High Speed Line (I) (경부고속선의 전력공급 안정성 검토를 위한 연장급전 조건의 전압강하 검토 (I))

  • Kim, Joo-Rak;Lee, Chang-Mu;Jang, Dong-Uk
    • Proceedings of the KSR Conference
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    • 2011.10a
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    • pp.1432-1438
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    • 2011
  • This paper presents the simulation of traction power supply system for the evaluation of voltage drop in Kyungbu high speed line. This simulation is performed in circumstance of extended feeding through vicinity substation. Extended feeding should be considered from design of system. Therefore, voltage drop at extended feeding must be accepted against regulation. In this paper, voltage drop is evaluated under condition of extended feeding targeting section from Shinchungju and Pyungtaek S/S.

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Soft Start-up Characteristics Analysis of Squirrel Cage Induction Generator (농형 유도 발전기의 소프트 기동 특성 해석)

  • Kim, Jong-Gyeum;Park, Young-Jeen
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.65 no.1
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    • pp.103-107
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    • 2016
  • In general, the voltage stability of induction generator is lower than synchronous generator. Induction generator has a number of advantages over the synchronous generator on the side of price and maintenance. So Induction generator has been applied to the small hydroelectric power of low output. Induction generator usually generates a high current during grid connection. The high current that occurs during grid connection can cause a voltage drop in the system. In order to increase the supply of the induction generator, it is necessary to propose a method of reducing high current. This paper proposes some method of the soft start to reduce voltage drop caused by the large starting current. soft-start method has high voltage drop effect than direct start method, control of firing angle can be increased the voltage drop effect.

Improved Performance of SVPWM Inverter Based on Novel Dead Time and Voltage Drop Compensation (새로운 데드타임 및 전압강하의 보상을 이용한 SVPWM 인버터의 성능개선)

  • Lee, Dong-Hui;Gwon, Yeong-An
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.49 no.9
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    • pp.618-625
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    • 2000
  • Recently PWM inverters are widely utilized for many industrial applications e.g. high performance motor drive and PWM techniques are newly developed for an accurate output voltage. Among them space voltage vector PWM(SVPWM) inverter has high voltage ratio and low harmonics compared to the conventional sinusoidal PWM inverter. However output voltage of PWM inverter is distorted and has error duet o the conducting voltage drop of switching devices and the dead time that is inevitable to prevent the shoot-through phenomenon. This paper investigates 3-phase SVPWM inverter which has a new compensation method against dead time and voltage drop. Proposed algorithm calculates gate pulse periods which directly compensates the dead time and nonlinear voltage drop without modification of reference voltages. Direct compensation of gate pulse periods produces exact output voltage and does not need additional circuits. The propose algorithm is verified through the simulation and experiments.

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An Analysis on Optimal Design and Electrical Characteristics of CT-IGBT(Circular Trench IGBT) (CT-IGBT의 최적 설계 및 전기적 특성에 관한 분석)

  • Kwak, Sang-Hyeon;Seo, Jun-Ho;Seo, In-Kon;Sung, Man-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.22-23
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    • 2008
  • The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the Breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from p base and n drift junction to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction change of current path which pass through reversed layer channel.

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An Analysis of IGBT(Insulator Gate Bipolar Transistor) Structure with an Additional Circular Trench Gate using Wet Oxidation (습식 산화를 이용한 원형 트렌치 게이트 IGBT에 관한 연구)

  • Kwak, Sang-Hyeon;Kyoung, Sin-Su;Sung, Man-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.11
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    • pp.981-986
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    • 2008
  • The conventional IGBT has two problems to make the device taking high performance. The one is high on state voltage drop associated with JFET region, the other is low breakdown voltage associated with concentrating the electric field on the junction of between p base and n drift. This paper is about the structure to effectively improve both the lower on state voltage drop and the higher breakdown voltage than the conventional IGBT. For the fabrication of the circular trench IGBT with the circular trench layer, it is necessary to perform the only one wet oxidation step for the circular trench layer. Analysis on both the on state voltage drop and the breakdown voltage show the improved values compared to the conventional IGBT structure. Because the circular trench layer disperses electric field from the junction of between p base and n drift to circular trench, the breakdown voltage increase. The on state voltage drop decrease due to reduction of JFET region and direction changed of current path which pass through reversed layer channel. The electrical characteristics were studied by MEDICI simulation results.

The study on the thickness change of tantalum oxide as voltage drop in electrolyte

  • Hur, Chang-Wu;Lee, Kyu-Chung
    • Journal of information and communication convergence engineering
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    • v.8 no.4
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    • pp.453-456
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    • 2010
  • Tantalum oxide ($Ta_2O_5$) films are of considerable interest for a range of application, including optical waveguide devices, high temperature resistors, and oxygen sensors. In this paper, we establish an anode oxidation process of tantalum thin film. The voltage drop in the electrolyte is affected not in voltage change but in current change. If the voltage drop in the electrolyte is same with cathode oxidation voltage, the current changes logarithmically in proportion to the voltage drop in interface of tantalum oxide and electrolyte. As a result of the measurement on the electrical property of tantalum oxide thin film, when the thickness of the insulator film is $1500{\AA}$, the breakdown voltage is 350volts and dielectric constant is 29.

A Study on the Development of Arc Length Estimation Method in FCAW (FCAW에서의 아크 길이 추정 방법 개발에 관한 연구)

  • Bae, Kwang-Moo;Cho, Sang-Myung
    • Journal of Welding and Joining
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    • v.27 no.3
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    • pp.67-72
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    • 2009
  • The flux cored arc welding (FCAW) process is one of the most frequently employed and important welding process due to high productivity and excellent workability. The process is performed either as an automated process or as a semi-automatic process. In FCAW process, welding voltage has been considered as a qualitative indication of arc length. But it is necessary to let welding operators know, maintain and manage the arc length directly by estimating and displaying it. In this study, to develop arc length estimation technique, we measured a welding circuit resistance($R_sc$) and then we calculated welding circuit voltage drop($V_sc$). Also, we measured arc peak voltage($V_ap$). By subtracting $V_sc$ from $V_arc$, we can easily calculate net arc voltage drop($V_arc$). Consequently, we suggested arc length estimating equation and basic algorithm by regressive analyzing the relationship between net arc voltage drop($V_arc$) and real arc length(Larc) measured by high speed camera. Therefore, arc length can be predicted by just monitoring welding current and voltage.

System Design and Performance Analysis of $MnO_2$ Pseudo-capacitor for Digital Communication Applications (디지털 통신 응용을 위한 $MnO_2$, Pseudo-capacitor의 시스템 설계 및 성능평가)

  • Seong W. K.;Hong M. S.;Kim S. W.
    • Journal of the Korean Electrochemical Society
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    • v.3 no.4
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    • pp.241-245
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    • 2000
  • The objective of this work Is to design, fabricate, and characterize pseudo-capacitor using amorphous $MnO_2\;nH_2O$ electrode material. The cyclic voltammogram under 100mV/s scan rate of the material shows the electrochemically stable potential window of 1V and the specific capacitance of 250F/g. The TDMA pulse test result indicates that the TDMA system (2 parallel-pseudo-capacitor systems) has the ohmic voltage drop of 0.22V and the capacitor voltage drop of 0.38V. The total voltage drop of the TDMA system is 0.60V and less than 1V of which value is the maximum voltage drop requirement or the TDMA satellite phone. Also, the TDMA system had the ESR of $55m{\Omega}$ and the capacitance of 105mF. Therefore, it is confirmed that the TDMA system has the application feasibility as load-leveling capacitor for the satellite phone.

A Study on Voltage Drop Compensation by STATCOM Considering Dynamic Characteristics of the 3-Phase Induction Motor in Electric Railway Systems (전기철도 3상유도전동기의 기동특성을 고려한 STATCOM에 의한 전압강하 보상에 관한연구)

  • Hwang, Sung-Ho;Oh, Min-Hyuk;Lee, Byung-Ha
    • Proceedings of the KIEE Conference
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    • 2005.11b
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    • pp.337-339
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    • 2005
  • The purpose of this paper is to compensate the voltage drop of the power system in the AC High-Speed Railway (HSR). Reactive power compensation is often the most effective way to improve system voltage drop. The suitable modeling of the electric railway system should be applied to the EMTP. the dynamic characteristics of 3-Phase Induction Motor in Electric Railway Systems is considered for precise modeling. it is shown through EMTP simulation that voltage drop can be compensated effectively by STATCOM.

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A Study on the Novel TIGBT with Trench Collector (트렌치 콜렉터를 가지는 새로운 TIGBT 에 관한 연구)

  • Lee, Jae-In;Yang, Sung-Min;Bae, Young-Seok;Sung, Man-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.3
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    • pp.190-193
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    • 2010
  • Various power semiconductor devices have been developed and evolved since 1950s. Among them, IGBT is the most developed power semiconductor device which has high breakdown voltage, high current conduction and suitable switching speed which perform trade-offs between each other. In other words, there are trade-offs between a breakdown voltage and on-state voltage drop, and between on-state voltage drop and turn-off time. In this paper, the new structure is proposed to improve a trade-off between a breakdown voltage and on-state voltage drop. The proposed structure has a trench collector and this trench collector induces an accumulation layer at the bottom of an n-drift region during off-state. And this accumulation layer prevents expansion of depletion layer so that trapezoidal electric field distribution is performed in the n-drift region. As a result of this, breakdown voltage is increased without increasing on-state voltage drop. The electrical characteristics of the proposed IGBT is analyzed and optimized by using representative device simulator, TSUPREM4 and MEDICI. After optimization, the electrical characteristics of the proposed IGBT is compared with NPT IGBT which have the same device thickness. As a result of this, it can be confirmed that the proposed structure increases the breakdown voltage of 800 V than that of the conventional NPT IGBT without increasing the on-state voltage drop.