• Title/Summary/Keyword: Voltage Level

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Seismic and Stress Analysis of 72.5kV GIS for Technical Specification of KEPCO (72.5kV GIS 전력 장비의 KEPCO 기준 내진 및 응력 해석)

  • Lee, Jae-Hwan;Kim, Young-Joong;Kim, So-Ul;Bang, Myung-Suk
    • Journal of the Computational Structural Engineering Institute of Korea
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    • v.30 no.3
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    • pp.207-214
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    • 2017
  • High voltage electric power transmitter GIS(Gas Insulated Switchgear) above 72.5kV needs to satisfy domestic Korean peninsular standard(ES-6110-0002) in KEPCO with respect to normal and special operation conditions which include internal gas pressure, dead weight, wind and seismic load. Some other requirements not described in Korean standard can be applied from other international standards such as IEC(International Electronical Committee) 62271-203 and 62271-207. The GIS is a kind of pressure vessel structure made of aluminum and filled with SF6 gas of internal pressure 0.4~0.5MPa. Finite element analysis of GIS is performed with such operational loads including seismic loading and the stability and reliability is determined according to ASME BPVC(Boiler and Pressure Vessel Code) SEC. VIII standard where the allowable stress level of the pressure vessel is suggested. The result shows that the stress of GIS is satisfied the allowable stress level and the safety factor is about 2.3 for Korean peninsular standard.

Ultraviolet LEDs using n-ZnO:Ga/i-ZnO/p-GaN:Mg heterojunction (n-ZnO/i-ZnO/p-GaN:Mg 이종접합을 이용한 UV 발광 다이오드)

  • Han, W.S.;Kim, Y.Y.;Kong, B.H.;Cho, H.K.;Lee, J.H.;Kim, H.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.50-50
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    • 2008
  • ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.

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Synthesis and Photovoltaic Properties of New π-conjugated Polymers Based on Benzo[1,2,5]thiadiazole (Benzo[1,2,5]thiadiazole을 기본 골격으로 한 공액고분자의 합성 및 광전변환특성 연구)

  • Bea, Jun Huei;Lim, Gyeong Eun;Kim, Joo Hyun
    • Applied Chemistry for Engineering
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    • v.24 no.4
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    • pp.396-401
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    • 2013
  • Alternating copolymers, poly[9-(2-octyl-dodecyl)-9H-carbazole-alt-4,7-di-thiophen-2-yl-benzo[1,2,5]thiadiazole] (PCD20TBT) and poly[9,10-bis-(2-octyl-dodecyloxy)-phenanthrene-alt-4,7-di-thiophen-2-yl-benzo[1,2,5]thiadiazole] (PN40TBT), were synthesized by the Suzuki coupling reaction. The copolymers were soluble in common organic solvents such as chloroform, chlorobenzene, 1,2-dichlorobenzene, tetrahydrofuran and toluene. The maximum absorption wavelength and the band gap of PCD20TBT were 535 nm and 1.75 eV, respectively. The maximum absorption wavelength and the band gap of PN40TBT were 560 nm and 1.97 eV, respectively. The HOMO and the LUMO energy level of PCD20TBT were -5.11 eV and -3.36 eV, respectively. As for PN40TBT, the HOMO and the LUMO energy level of PCD20TBT were -5.31 eV and -3.34 eV, respectively. The polymer solar cells (PSCs) based on the blend of copolymer and PCBM (1 : 2 by weight ratio) were fabricated. The power conversion efficiencies of PSCs based on PCD20TBT and PN40TBT were 0.52% and 0.60%, respectively. The short circuit current density ($J_{SC}$), fill factor (FF) and open circuit voltage ($V_{OC}$) of the device with PCD20TBT were $-1.97mA/cm^2$, 38.2% and 0.69 V. For PN40TBT, the $J_{SC}$, FF, and $V_{OC}$ were $-1.77mA/cm^2$, 42.9%, and 0.79 V, respectively.

Comparison Study of AAS and ISE Method in the Lithium Analysis of Serum and Urine (혈액 및 소변의 Lithium치 측정에 있어서 AAS법과 ISE법의 비교)

  • Lee, Soo-In;Lee, Chae-Hoon;Kim, Kyung-Dong;Kim, Chung-Sook
    • Journal of Yeungnam Medical Science
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    • v.10 no.2
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    • pp.409-416
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    • 1993
  • In the method for lithium (Li) analysis, flame emission photometry and atomic absorption spectrophotometry (AAS) have been used most frequently. In addition, lithium can be analyzed by ion-selective electrode (ISE) or fluorscence polarization immunoassay. We evaluated the comparison between AAS method based on the principle of absorption of light at 670.8 nm by Li and ISE method based on the principle of voltage difference generated by Li in contact with lithium ionophore. We compared with those obtained by AAS (AA/AE Spectrophotometer 551, Instrumentation Laboratory Co.) and ISE(CSYNCHRON EL-ISE, Beckman Co.) in the serum and urine of 6 patients and evaluated time-related changes of serum lithium concentration after dosing in both methods. The results are summarized as follows : 1. In within-run precision study for lithium concentration, coefficient variations (CVs, %) ranged from 1.34 to 2.17 for AAS and from 0.34 to 0.85 for ISE method. In between-run precision study for lithium concentration, CVs ranged from 1.23 to 1.72 for AAS and from 0.61 to 1.38 for ISE method. 2. The correlation study between AAS and ISE method resulted in Y=0.946X+0.137 (N=32, r=0.933, X=AAS, Y=ISE) for serum lithium and Y=1.092X+0.977 (N=28, r=0.943, X=AAS, Y=ISE) for urine lithium. 3. Time-related changes of serum lithium concentration in both AAS and ISE method resulted in peak serum levels about 2 hours after dosing and then rapidly decreased after the peak serum level and finally arrived at nearly initial levels about 9 hours after dosing. 4. The reference range of serum lithium was found as undetectable level for both AAS and ISE method and the reference range of urine lithium to the urine creatinine was 0-0.00014 mmol/mg(mean 0.00002 mmol/mg) for AAS method.

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Performance enhancement of Organic Thin Film Transistor using $C_{60}$ hole injection layer ($C_{60}$(buckminsterfullurene) 홀주입층을 적용한 유기박막트랜지스터의 성능향상)

  • Yi, Moon-Suk
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.5
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    • pp.19-25
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    • 2008
  • In this study, we fabricated Organic Thin Film Transistors(OTFTs) with $C_{60}$ hole injection layer between organic semiconductor(pentacene) and metal electrode, and we compared the electrical characteristics of OTFTs with/without $C_{60}$. When the $C_{60}$ hole injection layer was introduced, the mobility and the threshold voltage were improved from 0.298 $cm^2/V{\cdot}s$ and -13.3V to 0.452 $cm^2/V{\cdot}s$ and -10.8V, and the contact resistance was also reduced. When the $C_{60}$ is inserted, the hole injection was enhanced because the $C_{60}$ prevent the unwanted chemical reaction between pentacene and Au. Furthermore, we fabricated the OTFTs using Al as their electrodes. When the OTFTs were made by only aluminum electrode, the channel were not mostly made because of the high hole injection barrier between pentacene and aluminum, but when the $C_{60}$ layer with an optimal thickness was applied between aluminum and pentacene, the device performances were obviously enhanced because of the vacuum energy level shift of Al and the consequent decrease of the hole injection barrier which was induced by the interface dipole formation between $C_{60}$ and Al. The mobility and $I_{ON}/I_{OFF}$ current ratio of OTFT with $C_{60}/Al$ electrode were 0.165 $cm^2/V{\cdot}s$ and $1.4{\times}10^4$ which were comparable with the normal Au electrode OTFT.

Design of 20 W Class-E Amplifier Including Protection for Wireless Power Transmission at ISM 13.56 MHz (보호 회로를 포함한 무선 전력 전송용 ISM 13.56 MHz 20 W Class-E 앰프 설계)

  • Nam, Min-Young;Kim, Young-Sik
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.6
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    • pp.613-622
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    • 2013
  • In this paper, an inductive clamping class-E power amplifier has been tested for wireless power transmission at ISM band, 13.56 MHz. The implemented power amplifier is designed to operate stably without destroying power transistor in wireless power transmission system which basically keeps not to align between a transmitting antenna and a receiving antenna. The power amplifier is also designed to enhance harmonic filtering characteristic. The amplifier was tested with a DC supply voltage of 28 V and input power of 25 dBm at 13.56 MHz. The test results show the output power level of 43 dBm, the difference power level between fundamental frequency and second harmonic frequency of more than 55 dBc, the dc current consumption of 830 mA, and the high power-added efficiency of 85 %. Finally, the implemented power amplifier operated normally with 830 mA DC current consumption from 28 V source when the two antennas were aligned, and the power transmission was successful. But when the two antennas were not aligned, its DC current consumption automatically decreased down to 420 mA to protect the switching transistor.

Simulation on Optimum Doping Levels in Si Solar Cells

  • Choe, Kwang Su
    • Korean Journal of Materials Research
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    • v.30 no.10
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    • pp.509-514
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    • 2020
  • The two key variables of an Si solar cell, i.e., emitter (n-type window layer) and base (p-type substrate) doping levels or concentrations, are studied using Medici, a 2-dimensional semiconductor device simulation tool. The substrate is p-type and 150 ㎛ thick, the pn junction is 2 ㎛ from the front surface, and the cell is lit on the front surface. The doping concentration ranges from 1 × 1010 cm-3 to 1 × 1020 cm-3 for both emitter and base, resulting in a matrix of 11 by 11 or a total of 121 data points. With respect to increasing donor concentration (Nd) in the emitter, the open-circuit voltage (Voc) is little affected throughout, and the short-circuit current (Isc) is affected only at a very high levels of Nd, exceeding 1 × 1019 cm-3, dropping abruptly by about 12%, i.e., from Isc = 6.05 × 10-9 A·㎛-1, at Nd = 1 × 1019 cm-3 to Isc = 5.35 × 10-9 A·㎛-1 at Nd = 1 × 1020 cm-3, likely due to minority-carrier, or hole, recombination at the very high doping level. With respect to increasing acceptor concentration (Na) in the base, Isc is little affected throughout, but Voc increases steadily, i.e, from Voc = 0.29 V at Na = 1 × 1012 cm-3 to 0.69 V at Na = 1 × 1018 cm-3. On average, with an order increase in Na, Voc increases by about 0.07 V, likely due to narrowing of the depletion layer and lowering of the carrier recombination at the pn junction. At the maximum output power (Pmax), a peak value of 3.25 × 10-2 W·cm-2 or 32.5 mW·cm-2 is observed at the doping combination of Nd = 1 × 1019 cm-3, a level at which Si is degenerate (being metal-like), and Na = 1 × 1017 cm-3, and minimum values of near zero are observed at very low levels of Nd ≤ 1 × 1013 cm-3. This wide variation in Pmax, even within a given kind of solar cell, indicates that selecting an optimal combination of donor and acceptor doping concentrations is likely most important in solar cell engineering.

A Study on the Noise Reduction Method for Data Transmission of VLBI Data Processing System (VLBI 자료처리 시스템의 데이터 전송에서 잡음방지에 관한 연구)

  • Son, Do-Sun;Oh, Se-Jin;Yeom, Jae-Hwan;Roh, Duk-Gyoo;Jung, Jin-Seung;Oh, Chung-Sik
    • Journal of the Institute of Convergence Signal Processing
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    • v.12 no.4
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    • pp.333-340
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    • 2011
  • KJJVC(Korea-Japan Joint VLBI Correlator) was installed at the KJCC(Korea-Japan Correlation Center) and has been operated by KASI(Korea Astronomy and Space Science Institute) from 2009. KJNC is able to correlate the VLBI observed data through KVN(Korean VLBI Network), VERA(VLBI Exploration of Radio Astrometry), and JVN(Japanese VLBI Network) and its joint network array. And it is used exclusively as computer in order to process the observed data for the scientific purpose KJJVC used the VSI(VLBI Standard Interface) as the VLBI international standard at the data input-output specification between each component. Especially, for correlating the observed data, the data is transmitted with 1024Mbps speed between Mark5B high-speed playback and RVDB(Raw VLBI Data Buffer). The EMI(Electromagnetic lnterference), which is occurred by data transmission with high-speed, cause the data loss and the loss occurrence is frequently often for long transmission cable. Finally it will be caused the data recognition error by decreasing the voltage level of digital data signal. In this paper, in order to minimize the data loss by measuring the EMI noise level in transmission of the VSI specification, the 3 methods such as 1) RC filtering method, 2) lmpedance matching using Microstrip line, and 3) Signal buffering method using Differential line driver, were proposed. To verify the effectiveness of each proposed method, the performance evaluation was conducted by implementing and simulations for each method. Each proposed method was effectively confirmed as the high-speed data transmission of the VSI specification.

Fundamental Studies on the Development of On-line Monitoring of Trace Mercury in Drinking Water (음용수 중 수은 연속자동측정시스템의 개발에 관한 연구)

  • Chang, Soo-Hyun;Kim, Hyo-Jin;Kim, Sun-Tae;Kim, Young-Man
    • Analytical Science and Technology
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    • v.12 no.4
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    • pp.299-305
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    • 1999
  • The electrolyte cathode atomic glow discharge (ELCAD) is a new plasma source for direct determination of trace heavy metals in drinking and waste water. ELCAD has been successfully developed for on-line monitoring of heavy metals, however, shows difficulty to measure mercury. In this study, ELCAD has been modified to apply the atomic absorption spectrometry (AAS) for the direct determination of trace elements of mercury in flowing water.The fundamental characteristics of this new types of plasma source have been investigated and found that the pH of the solution, discharge voltage, and current are most important factors.The absorbance of 1.0 ppm Hg standard solution increases as pH of the solution increases from pH 1.0 to 3.0.However, % RSD of the absorbance also increases as the pH of solution increasesdue to plasma unstability.The detection limits of the standard solution of pH 1.5 and pH 3.0 are about 40 ppb and 10 ppb level, respectively.

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The Effect of NO Donor on Contraction, Cytosolic $Ca^{2+}$ Level and Ionic Currents in Guinea-pig Ileal Smooth Muscle

  • Kwon, Seong-Chun;Park, Ki-Young;Ahn, Duck-Sun;Lee, Young-Ho;Kang, Bok-Soon
    • The Korean Journal of Physiology and Pharmacology
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    • v.4 no.1
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    • pp.33-40
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    • 2000
  • This study was designed to clarify the mechanism of the inhibitory action of a nitric oxide (NO) donor, 3-morpholino-sydnonimine (SIN-1), on contraction, cytosolic $Ca^{2+}$ level $([Ca^{2+}]_i)$ and ionic currents in guinea-pig ileum. SIN-1 $(0.01{\sim}100\;{\mu}M)$ inhibited 25 mM KCl- or histamine $(10\;{\mu}M)-induced$ contraction in a concentration-dependent manner. SIN-1 reduced both the 25 mM KCl- and the histamine-stimulated increases in muscle tension in parallel with decreased $[Ca^{2+}]_i.$ Using the patch clamp technique with a holding potential of -60 mV, SIN-1 $(10\;{\mu}M)$ decreased peak Ba currents $(I_{Ba})$ by $30.9{\pm}5.4%$ (n=6) when voltage was stepped from -60 mV to +10 mV and this effect was blocked by ODQ $(1\;{\mu}M),$ a soluble guanylyl cyclase inhibitor. Cu/Zn SOD (100 U/ml), the free radical scavenger, had little effect on basal $I_{Ba},$ and SIN-1 $(10\;{\mu}M)$ inhibited peak $I_{Ba}$ by $32.4{\pm}5.8%$ (n=5) in the presence of Cu/Zn SOD. In a cell clamped at a holding-potential of -40 mV, application of $10\;{\mu}M$ histamine induced an inward current. The histamine-induced inward current was markedly and reversibly inhibited by $10\;{\mu}M$ SIN-1, and this effect was abolished by ODQ $(1\;{\mu}M).$ In addition, SIN-1 markedly increased the depolarization-activated outward $K^+$ currents in the all potential ranges. We concluded that SIN-1 inhibits smooth muscle contraction mainly by decreasing $[Ca^{2+}]_i$ resulted from the inhibition of L-type $Ca^{2+}$ channels and the inhibition of nonselective cation currents and/or by the activation of $K^+$ currents via a cGMP-dependent pathway.

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