• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2005년도 전력전자학술대회 논문집
• /
• pp.207-210
• /
• 2005

This paper describes a design of several ship's emergency lighting system(SELS) that power factor is improved and power is controlled extensively, and techniques to control and monitor this system in remote distance by PC serial communication. The remote monitoring control system is composed of emergency power supply system (EPSS), half bridge(HB)inverter, fluorescent lamp(FL), microprocessor, multi communication interface. EPSS checks the voltage of the emergency backup battery in real time. In case that the voltage of 13[V] or less has been detected for 5[msec] or longer for 3 times in a row, charger circuit is connected for battery charging. Experimental works using proposed system confirm that speedy and stable power to be supplied when main power source cut-off, compared with conventional analog type, and input power up to 35.0[%] by adjusting of pulse frequency of the HB inverter.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
• /
• pp.110-111
• /
• 2006

이중 에피층을 가지는 SOI (Silicon-On-Insulator) RESURF(REduced SURface Field) LIGBT(Lateral Insulated Gate Bipolar Transistor) 소자의 에피층 두께에 따른 항복전압 특성을 분석하였다. 이중 에 피층 구조를 가지는 SOI RESURF LIGBT 소자는 전하보상효과를 얻기 위해 기존 LIGBT 소자의 n 에피로 된 영역을 n/p 에피층의 이중 구조로 변경한 소자로 n/p 에피층 영역내의 전하간 상호작용에 의해 에피 영역 전체가 공핍됨으로써 높은 에피 영역농도에서도 높은 항복전압을 얻을 수 있는 소자이다. 본 논문에서는 LIGBT 에피층의 전체 두께와 농도를 고정한 상태에서 n/p 에피층의 두께가 변하는 경우에 항복전압 특성의 변화에 대해 simulation을 통해 분석하였다.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2002년도 ITC-CSCC -1
• /
• pp.369-372
• /
• 2002

To remedy both the degradation and saturation of the output voltages in the modified Dickson pump, a new multistage charge pump circuit is presented in this paper. Here using PMOS charge-transfer switches instead of NMOS ones eliminates the necessity of diode-configured output stage in the modified-Dickson pump, achieving the improved voltage pumping gain and its output voltages proportional to the stage numbers. Measurement indicates that VOUT/3VDD of this new pump circuit with two stages reaches to a value as high as 0.94V even with low VDD=1.0 V, strongly addressing that this scheme is very favorable at low-voltage memory applications.

• 동의생리병리학회지
• /
• 제27권3호
• /
• pp.313-317
• /
• 2013

In order to standardize the pressure/depth against radial artery, the externally-applied-pressure measuring system was fabricated and evaluated. Based on the resistance-variable characteristic of the very thin($10{\mu}m$) film conductive tape along the pressure of a tip of a examiner's hand, this system was designed. The change of the pressure was processed through voltage regulator and Matlab S/W, then showed on computer monitor. The signal output through voltage regulator, and Matlab S/W was evaluated on various conditions. The evaluation was executed on these cases; an examiner slowly increases and decreases the pressure, rapidly increases and decreases the pressure, sequentially increases and decreases the pressure, sustains the pressure, micro-changes the pressure. As a pulse examiner varies the pressure on the radial artery of the examinee, the system's real-time output consistently varies according to the pressure. From the results, it is concluded that this system consistently shows the pressure of the tip of a examiner's hand in real time without interrupting the evaluation of the radial artery pulse. Therefore this system is expected to standardize the value of the pressure/depth externally applied by an examiner.

• 전력전자학회논문지
• /
• 제22권4호
• /
• pp.336-344
• /
• 2017

This paper presents the three-port DC-DC converter modeling and controller design procedure, which is part of the solid-state transformer (SST) to interface medium voltage AC grid to bipolar DC distribution network. Due to the high primary side DC link voltage, the proposed converter employs the three-level neutral point clamped (NPC) topology at the primary side and 2-two level half bridge circuits for each DC distribution network. For the proposed converter particular structure, this paper conducts modeling the three winding transformer and the power transfer between each port. A decoupling method is adopted to simplify the power transfer model. The voltage controller design procedure is presented. In addition, the output current sharing controller is employed for current balancing between the parallel-connected secondary output ports. The proposed circuit and controller performance are verified by experimental results using a 30 kW prototype SST system.

• Applied Science and Convergence Technology
• /
• 제23권4호
• /
• pp.192-199
• /
• 2014

The electronic property of graphene was investigated by hydrazine treatment. Hydrazine ($N_2H_4$) highly increases electron concentrations and up-shifts Fermi level of graphene based on significant shift of Dirac point to the negative gate voltage. We have observed contact resistance and channel length dependent mobility of graphene in the back-gated device after hydrazine monohydrate treatment and continuously monitored electrical characteristics under Nitrogen or air exposure. The contact resistance increases with hydrazine-treated and subsequent Nitrogen-exposed devices and reduces down in successive Air-exposed device to the similar level of pristine one. The channel conductance curve as a function of gate voltage in hole conduction regime keeps analogous value and shape even after Nitrogen/Air exposure specially whereas, in electron conduction regime change rate of conductance along with the level of conductance with gate voltage are decreased. Hydrazine could be utilized as the highly effective donor without degradation of mobility but the stability issue to be solved for future application.

• 대한전자공학회논문지SD
• /
• 제44권10호
• /
• pp.61-66
• /
• 2007

본 논문에서는LCD (Liquid Crystal Display) source driver IC에서 사용되는 고전압 op-amp의 출력 편차를 개선하기 위하여 전압 이득을 향상한 CMOS rail-to-rail 입/출력 op-amp를 제안하였다. 제안된 op-amp는 15 V 이상의 고전압 MOSFET의 과도한 channel length modulation에 의한 전압 이득의 감소로 offset 전압이 커지는 문제를 해결하기 위하여 cascode 구조를 갖는 floating current source 및 class-AB control단을 채용하고 있다. 제안된 op-amp는 HSPICE 시뮬레이션을 통하여 전압 이득이 기존 대비 30 dB 향상됨을 확인하였으며, onset 전압은 기존 6.84 mV에서 $400\;{\mu}V$ 이하로 개선됨을 확인하였다. 또한, 제안된 op-amp가 적용된 LCD source driver IC의 실측 결과 출력 편차는 기존 대비 2 mV 향상됨을 확인하였다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
• /
• pp.174-177
• /
• 2001

The voltage holding ratio (VHR) and Residual DC property in the in-plane switching (IPS) cell was studied Several IPS cells which have different concentrations of cynao liquid crystals (LCs) and different resistivities of fluorine LCs were fabricated VHR and residual DC voltage in the IPS cells using the capacitance-voltage (C-V) hysteresis method was measured. We found that the VHR of the IPS cell was decreasing with increasing concentration of cyano LC. The residual DC voltage of the IPS cell was decreasing with increasing concentration of cyano LCs. We suggest that the high polarity of cyano LC helps reducing the residual DC voltage.

• 조명전기설비학회논문지
• /
• 제27권12호
• /
• pp.101-108
• /
• 2013

This paper presents A Zero-Voltage-Switching(ZVS) Three-Level DC/DC Converter using Primary Clamping Diodes. The Previous ZVS Three-Level DC/DC converter realizes ZVS for the switches with the use of the leakage inductance(or external resonant inductance) and the output capacitors of the switches, however the rectifier diodes suffer from recovery which results in oscillation and voltage spike. In order to solve this problem, this paper proposes a novel ZVS Three-Level DC/DC converter, which introduces two clamping diodes to the basic Three-Level converter to eliminate the oscillation and clamp the rectified voltage to the reflected input voltage.

• Transactions on Electrical and Electronic Materials
• /
• 제5권4호
• /
• pp.153-157
• /
• 2004

ITO thin films were deposited on PET and soda-lime glass substrates by a dc reactive magnetron sputtering of In-Sn alloy metal target without substrate heater and post-deposition thermal treatment. The dependency of rf-bias voltage and substrate power during deposition processing was investigated to control the electrical and optical properties of ITO films. The range of rf bias voltage is from 0 to -80 V and the substrate power is applied from 10 to 50 W. The minimum resistivity of ITO film is 5.4${\times}$10$^{-4}$ $\Omega$cm at 50 W power and rf-bias voltage of -20 V. The best transmittance of ITO films at 550 nm wavelength is 91 % in the substrate power of 30 W and rf-bias voltage of -80 V.