• 한국전자파학회논문지
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• 제24권11호
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• pp.1091-1097
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• 2013

이 논문은 $0.11{\mu}m$ RF CMOS 공정에서 비대칭 몸체 바이어싱을 적용한 비교기를 사용한 정류기를 제안한다. 제안하는 정류기는 MOSFET와 두 개의 비교기로 이루어져 있다. 이 비교기는 부하 전압이 입력 전압보다 높을 때 생기는 역방향 누설 전류를 줄이는 데 사용한다. 비대칭 몸체 바이어싱을 사용함으로써 비교기의 High에서 Low 상태로 바꾸는 기준 전압을 높이고, 누설 전류가 흐르는 시간을 줄인다. 13.56 MHz의 2 Vpp 교류전압을 입력하고, $1k{\Omega}$의 저항과 1 nF의 커패시터를 부하에 연결한 환경에서 측정하였다. 시뮬레이션 결과, 전압 변환 효율은 87.5 %, 전력 변환 효율은 45 %이고, 측정한 전압 변환 효율은 85.215 %, 전력 변환 효율은 50 %이다.

• Journal of Power Electronics
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• 제16권3호
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• pp.1226-1235
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• 2016

For wearable health monitoring systems, a fundamental problem is the limited space for storing energy, which can be translated into a short operational life. In this paper, a highly efficient active voltage doubling rectifier with a wide input range for micro-piezoelectric energy harvesting systems is proposed. To obtain a higher output voltage, the Dickson charge pump topology is chosen in this design. By replacing the passive diodes with unbalanced-biased comparator-controlled active counterparts, the proposed rectifier minimizes the voltage losses along the conduction path and solves the reverse leakage problem caused by conventional comparator-controlled active diodes. To improve the rectifier input voltage sensitivity and decrease the minimum operational input voltage, two low power common-gate comparators are introduced in the proposed design. To keep the comparator from oscillating, a positive feedback loop formed by the capacitor C is added to it. Based on the SMIC 0.18-μm standard CMOS process, the proposed rectifier is simulated and implemented. The area of the whole chip is 0.91×0.97 mm², while the rectifier core occupies only 13% of this area. The measured results show that the proposed rectifier can operate properly with input amplitudes ranging from 0.2 to 1.0V and with frequencies ranging from 20 to 3000 Hz. The proposed rectifier can achieve a 92.5% power conversion efficiency (PCE) with input amplitudes equal to 0.6 V at 200 Hz. The voltage conversion efficiency (VCE) is around 93% for input amplitudes greater than 0.3 V and load resistances larger than 20kΩ.