• Journal of the Korean Institute of Telematics and Electronics B
• /
• v.28B no.12
• /
• pp.19-26
• /
• 1991

In this paper, we give a structure algorithm for the synthesis problems of the nonlinear system via dynamic feedback. Using our algorithm, sufficient conditions for the input-output synthesis problems are discussed. The problems we consider in this paper include dynamic input-output decoupling input-output linearization, and immersion into a linear system.

• Communications for Statistical Applications and Methods
• /
• v.6 no.3
• /
• pp.821-830
• /
• 1999

In This paper we calculate the probabilities of binomial and Poisson distributions when n or${\mu}$ is large. Based on this calculation we consider the normal approximation to the binomial and binomial approximation to Poisson. We implement this approximation via CGI and dynamic graphs. These implementation are made available through the internet.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2011.06a
• /
• pp.739-740
• /
• 2011

• Bulletin of the Korean Chemical Society
• /
• v.19 no.6
• /
• pp.686-689
• /
• 1998

Irradiation of 1-(o-allyloxyphenyl)-2-pentamethyldisilanylethyne (2) in methanol yields two 1 : 1 photoaddition products (3 and 4) via silacyclopropene intermediate. Photolysis of (2) with acetone in deaerated methylene chloride yields site specific and regioselective 1: 1 adducts (7 and 8) via silacyclopropene and 1-sila-1,2-propadiene intermediate, respectively.

• Honam Mathematical Journal
• /
• v.44 no.1
• /
• pp.26-35
• /
• 2022

In this paper we introduce two type of representations of the Pascal matrix via induced transformations of some q-derivatives as well as their some combinatorial applications.

• Journal of the Chungcheong Mathematical Society
• /
• v.36 no.3
• /
• pp.149-153
• /
• 2023

The aim of this note is to derive two known combinatorial identities via a hypergeometric series approach using Saalschiitz's classical summation theorem.

• East Asian mathematical journal
• /
• v.39 no.3
• /
• pp.299-303
• /
• 2023

The aim of this note is to provide three derivations of the well-known Gregory-Leibniz series for π via a hypergeometric series approach.

• Journal of the Microelectronics and Packaging Society
• /
• v.7 no.4
• /
• pp.23-29
• /
• 2000

We demonstrate the fabrication method of high-density and high-quality solder bump solving a copper (Cu) cross-contamination in Si-LSI laboratory. The Cu cross-contamination is solved by separating solder-bump process by two steps. Former is via-formation process excluding Cu/Ti under ball metallurgy (UBM) layer sputtering in Si-LSI laboratory. Latter is electroplating process including Ti-adhesion and Cu-seed layers sputtering out of Si-LSI laboratory. Thick photoresist (PR) is achieved by a multiple coating method. After TiW/Al-electrode sputtering for electroplating and via formation in Si-LSI laboratory, Cu/Ti UBM layer is sputtered on sample. The Cu-seed layer on the PR is etched during Cu-electroplating with low-electroplating rate due to a difference in resistance of UBM layer between via bottom and PR. Therefore Cu-buffer layer can be electroplated selectively at the via bottom. After etching the Ti-adhesion layer on the PR, Sn/Pb solder layer with a composition of 60/40 is electroplated using a tin-lead electroplating bath with a metal stoichiometry of 60/40 (weight percent ratio). Scanning electron microscope image shows that the fabricated solder bump is high-uniformity and high-quality as well as symmetric mushroom shape. The solder bumps with even 40/60 $\mu\textrm{m}$ in diameter/pitch do not touch during electroplating and reflow procedures. The solder-bump process of high-uniformity and high-density with the Cu cross-contamination free in Si-LSI laboratory will be effective for electronic microwave application.

• The KIPS Transactions:PartA
• /
• v.12A no.7 s.97
• /
• pp.627-636
• /
• 2005

This paper presents a PC cluster-based distributed video on demand (VOD) server that minimizes the load of the interconnection network by adopting channel bonding-based MVIA and the interval cache algorithm Video data is distributed to the disks of each server node of the distributed VOD server and each server node receives the data through the interconnection network and sends it to clients. The load of the interconnection network increases because of the large volume of video data transferred. We adopt two techniques to reduce the load of the interconnection network. First, an Msupporting channel bonding technique is adopted for the interconnection network. n which is a user-level communication protocol that reduces the overhead of the TCP/IP protocol in cluster systems, minimizes the time spent in communicating. We increase the bandwidth of the interconnection network using the channel bonding technique with MThe channel bonding technique expands the bandwidth by sending data concurrently through multiple network cards. Second, the interval cache reduces traffic on the interconnection network by caching the video data transferred from the remote disks in main memory Experiments using the distributed VOD server of this paper showed a maximum performance improvement of $30\%$ compared with a distributed VOD server without channel bonding-based MVIA and the interval cache, when used with a four-node PC cluster.

• Journal of the Microelectronics and Packaging Society
• /
• v.18 no.4
• /
• pp.49-53
• /
• 2011

High-speed Cu filling into a through-silicon-via (TSV) and simplification of bumping process by electroplating for three dimensional stacking of Si dice were investigated. The TSV was prepared on a Si wafer by deep reactive ion etching, and $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. In order to increase the filling rate of Cu into the via, a periodic-pulse-reverse wave current was applied to the Si chip during electroplating. In the bumping process, Sn-3.5Ag bumping was performed on the Cu plugs without lithography process. After electroplating, the cross sections of the vias and appearance of the bumps were observed by using a field emission scanning electron microscope. As a result, voids in the Cu-plugs were produced by via blocking around via opening and at the middle of the via when the vias were plated for 60 min at -9.66 $mA/cm^2$ and -7.71 $mA/cm^2$, respectively. The Cu plug with a void or a defect led to the production of imperfect Sn-Ag bump which was formed on the Cu-plug.