• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.464-467
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• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes and together with their overtones and combinations were observed. Optical properties were inves ated by PL at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undo&-InSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution. The Zn diffusion mechanism in InSe could be explained by interstitial-substitutional and vacancy complex models and the activation energy of 1.15-3.01eV were needed for diffusion.fusion.

• 한국환경과학회지
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• 제28권6호
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• pp.545-552
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• 2019

Tropaeolum majus, with a high decorative and food demand for vertical greening systems, has been utilized to revitalize urban agriculture. The effects of number of non-woven fabrics in a non-water environment and the adaptability of T. majus to this system were investigated. Planting ground composition of the container-type wall vertical greening system was made using non-woven fabric in one, two, three, or four layers. The results showed that the soil water content remained the highest when the non-woven fabric comprised 4 sheets. The morphological properties showed more growth with the 4 sheets than with 1, 2, and 3 sheets. In terms of physiological characteristics, chlorophyll content was mostly high in the 4 sheets, while shoot fresh weight value was in the order of 3 > 4 > 2 > 1 sheet, and root fresh weight value was in the order of 4 > 2 > 1 > 3 sheets. The dry weight of the measured values in the shoot was in the order of 4 > 3 > 2 > 1 sheet while no clear difference was found in the root of each treatment. The difference in the flowring characteristics was not different, but in evaluating the characteristics as a whole, the growth in the three layers of non-waven fabric was the best. In addition, the soil moisture contents and the growth characteristics were statistically significant as a positive correlation between the groups. Thus, greater the non-woven fabric, the higher is the adaptability of T. majus to dry stress under soil water-free conditions by maintaining soil moisture content. This showed that it represented an effective alternative as a method of vertical greening system for lower maintenance urban agriculture.

• 원예과학기술지
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• 제33권3호
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• pp.340-348
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• 2015

Mowing turfgrasses, especially fast growing species like perennial ryegrass, is one of the most time and money consuming tasks of their management. Trinexapac-ethyl (TE) is a popular plant growth regulator used to reduce mowing requirements, improve stress tolerance, and enhance turf quality. This study was conducted to investigate the effect of TE rate and frequency of applications on growth response and traffic tolerance of perennial ryegrass. The experiment was a split-plot laid out in a randomized complete block (RCB) design with three replications. TE was applied to main plots at 0.00, 0.25, and $0.50kg\;a.i.\;ha^{-1}$. Application pattern included an initial application, followed by two sequential applications at 6-wk intervals. Traffic treatment was applied to subplots with a cleated roller. Results demonstrated that TE consistently reduced vertical shoot growth, clippings dry weight, with maximum growth reduction of 59% and 65%, for 0.25 and $0.50kg\;a.i.\;ha^{-1}$, respectively, occurring at 2 weeks after initial TE treatment (WAT). Traffic also dramatically reduced vertical shoot growth and clippings dry weight. Overall, quality of perennial ryegrass was enhanced by sequential TE applications, however, turf quality and surface coverage reduced greatly under traffic, regardless of TE treatment. Total chlorophyll, chlorophyll a and chlorophyll b and total carbohydrates (TC) contents were also positively influenced following sequential TE application. Our results indicated that TE reduces mowing frequency and enhances turf quality rather than influencing traffic resistance.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.5.2-5.2
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• 2009

From 10 years ago, the development of nano-devices endeavored to achieve reconstruction of information technology (IT) and nano technology (NT) industry. Among the many materials for the IT and NT industry, zinc oxide (ZnO) is a very promising candidate material for the research of nano-device development. Nano-structures of ZnO-based materials were grown easily via various methods and it attracts huge attention because of their superior electrical and optical properties for optoelectronic devices. Recently, among the various growth methods, MOCVD has attracted considerable attention because it is suitable process with benefits such as large area growth, vertical alignment, and accurate doping for nano-device fabrication. However, ZnO based nanowires grown by MOCVD process were had the principal problems of 1st interfacial layers between substrate and nanowire, 2nd a broad diameter (about 100 nm), and 3rd high density, and 4th critical evaporation temperature of Zinc precursors. In particular, the growth of high performance nanowire for high efficiency nano-devices must be formed at high temperature growth, but zinc precursors were evaporated at high temperature.These problems should be repaired for materialization of ultra high performance quantum devices with quantum effect. For this reason, we firstly proposed the growth method of vertical aligned slim MgZnO nanowires (< 10 nm) without interfacial layers using self-phase separation by introduced Mg at critical evaporation temperature of Zinc precursors ($500^{\circ}C$). Here, the self-phase separation was reported that MgO-rich and the ZnO-rich phases were spontaneously formed by additionally introduced Mg precursors. In the growth of nanowires, the nanowires were only grown on the wurzite single crystal seeds as ZnO-rich phases with relatively low Mg composition (~36 at %). In this study, we investigated the microstructural behaviors of self-phase separation with increasing the Mg fluxes in the growth of MZO NWs, in order to secure drastic control engineering of density,diameter, and shape of nanowires.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1236-1239
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• 2005

Aligned carbon nanotubes(CNTs) array were synthesized using DC plasma-enhanced chemical vapor deposition. Silicon substrate Ni-coated of 5nm thickness were pretreated by $NH_3$ gas with a flow rate of 180sccm, for 10min. CNTs were grown on the pretreated substrates at $30%\;C_2H_2:NH_3$ flow ratios for 10min. Carbon nanotubes with diameters from 60 to 80 nanometers and lengths about 2.7 micrometers were obtained. Vertical alignment of carbon nanotubes were observed by FESEM.

• 대한소아치과학회지
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• 제7권1호
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• pp.21-32
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• 1980

The purpose of this study is to determine the developmental relationship between the maxillary primary central incisors and their permanent successor. The auther took 315 cases of lateral cephalogram of the children (males were 171, females were 141) Angular change of the teeth and horizontal and vertical linear change were observed. The obtained results were as follows: 1. The inclination of the long axes of both incisor teeth was relatively stable and labio-version of both incisore was significant at 7 years of age. 2. The distance between the incisal edge of the permanent central insisor and the resorbing apex of the primary maxillary central incisor remained within 2mm of each other, 3. Vertical growth of the maxillary anterior portion was greater than horizontal growth from 6 to 7 years of age. 4. There was not a significant sexual difference.

• 한국항해학회지
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• 제19권4호
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• pp.83-92
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• 1995

In this study, a vertical type LPE system has been developed for III-V semiconductor compounds single crystal growth. On the basis of the experience & basic study using this system, the system modification has been carried out for a ultra thin multi-layer single crystal. The temperature fluctuation was within ${\pm}0.006^{\circ}C$ at $800^{\circ}C$, temperature uniformity for graphite boat around was within ${\pm}0.15^{\circ}C$ at $650^{\circ}C$, and cooling rate was controllable from $2.2^{\circ}C$/min to $0.05^{\circ}C$/min. As a result it is considered to satisfy the condition to grow a ultra thin layer single crystal of III-V semiconductor compounds.

• 한국전기전자재료학회논문지
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• 제15권8호
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• pp.713-719
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• 2002

In this study, the vertically well-aligned CNTs were synthesized by DC bias-assisted inductively coupled plasma hot-filament chemical vapor deposition (ICPHFCVD) using radio-frequence plasma of high density and that CNTs were vertically grown on Ni(300 )/Cr(200 )-deposited glass substrates at 58$0^{\circ}C$. This system(ICPHFCVD) added to tungsten filament in order to get thermal decompound and DC bias in order to vertically grow to general Inductively Coupled Plasma CVD. The grown CNTs by ICPHFCVD were developed to higher graphitization and fewer field emission properties than those by general ICPCVD. In this system, DC bias was effect of vortical alignment to growing CNTs. The measured turn-on fields of field emission property by general ICPCVD and DC bias-assisted ICPHFCVD were 5 V/${\mu}{\textrm}{m}$ and 3 V/${\mu}{\textrm}{m}$, respectively.

• Journal of Mechanical Science and Technology
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• 제15권8호
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• pp.1188-1195
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• 2001

A numerical analysis has been carried out to investigate the influences of thermosolutal convection on the heat and mass transfer and solute segregation in crystals grown by the vertical Bridgman technique. The governing equations are solved by a finite-volume method using the power law scheme and the SIMPLE algorithm in which body-fitted coordinate system has been used. A primary convective cell driven by thermal gradients forms in the bulk of the domain, while a secondary convective cell driven by solutal gradients forms near interface. As the solutal Rayleigh number increases, secondary cell becomes to be stronger and has a great influence on the radial concentration along the interface.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.67-68
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• 2000

Polycrystalline silicon (poly-Si) thin film transistors (TFT's) employing vertical amorphous silicon (a-Si) offsets have been fabricated without additional photolithography processes. The a-Si offset has been formed utilizing the poly-Si grain growth blocking effect by thin native oxide film during the excimer laser recrystallization of a-Si. The ON current degradation of the new device after 4 hour's electrical stress was reduced by 5 times compared with conventional poly-Si TFT's.