• The Journal of the Acoustical Society of Korea
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• 제20권1E호
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• pp.14-19
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• 2001

We have proposed BIST method and circuit for embedded 16M SDRAM with logic. It can test the AC parameter of embedded 16M SDRAM using the BIST circuit capable of detecting the address of a fail cell installed in an Merged Memory with Logic(MML). It generates the information of repair for redundancy circuit. The function and AC parameter of the embedded memory can also be tested using the proposed BIST method. It is possible to test the embedded SDRAM without external test pin. The total gate of the BIST circuit is approximately 4,500 in the case of synthesizing by 0.25μm cell library and is verified by Verilog simulation. The test time of each one AC parameter is about 200ms using 2Y-March 14n algorithm.