• 한국전기전자재료학회논문지
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• 제17권11호
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• pp.1167-1173
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• 2004

This paper reports the variations of varistor voltage, nonlinear exponent, leakage current, and dissipation factor against surge stress of ZnO-P $r_{6}$ $O_{11}$-CoO-C $r_2$ $O_3$-E $r_2$ $O_3$(ZPCCE)-based varistors manufactured with the variations of sintering temperature. It was found that the variations of electrical parameters against surge stressing current of 100 A/$\textrm{cm}^2$(8x20 ${\mu}\textrm{s}$) is not so large under the surge stress of 700 times. Among varistors, specially the varistor sintered at 134$0^{\circ}C$ exhibited the smallest variations, with %$\Delta$ $V_{lmA}$=+0.23%, %$\Delta$$\alpha$=+0.23%, %$\Delta$ $I_{L}$=0%, %$\Delta$tan$\delta$=-6.94%. The clamping voltage ratio( $V_{c}$/ $V_{lmA}$) of all varistors was less than 2.2.2.2.2.2.2.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.367-368
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• 2005

The microstructure and electrical properties of $Pr_6O_{11}$-based ZnO varistors consisting of Zn-Pr-Co-Cr-Tb oxides were investigated with $Tb_4O_7$ content in the range of 0.25~1.0 mol%. The varistor ceramics exhibited very high densification in the range of 5.74~5.83g/$cm^3$ with increasing $Tb_4O_7$ content. Furthermore, the incorporation of $Tb_4O_7$ in varistor ceramics $Tb_4O_7$greatly increased All of the characteristic parameters. As a result, It was found that $Tb_4O_7$-added varistors are good for high voltage field.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.383-386
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• 2004

DC accelerated aging characteristics of Zn-Pr-Co-Cr-La oxides-based varistors were investigated with various sintering temperatures. The varistors sintered at $1240^{\circ}C$ exhibited the highest nonlinearity, with a nonlinear exponent of 79.3 and a leakage current of $0.3\;{\mu}A$, whereas completely degraded because of thermal runaway owing to low sintered density. The varistors sintered at $1250^{\circ}C$ exhibited not only a high nonlinearity with the nonlinear exponent 61.4 and the leakage current 0.7 ${\mu}A$, but also a high stability with the variation rates of varistor voltage and nonlinear exponent are -1.01% and -10.67%, respectively, under DC stress condition such as $(0.85\;V_{1mA}/115^{\circ}C/24\;h)+(0.90\;V_{1mA}/120^{\circ}C/24\;h)+(0.95\;V_{1mA}/125^{\circ}C/24\;h)+(0.95\;V_{1mA}/150^{\circ}C/24\;h)$.

• 한국전기전자재료학회논문지
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• 제15권3호
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• pp.244-252
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• 2002

The electrical and dielectric behavior fort DC accelerated aging stress of P $r_{6}$ $O_{11}$-based Zno varistors cnsisting of ZnO-P $r_{6}$ $O_{11}$-CoO-C $r_2$ $O_3$-E $r_2$ $O_3$ were investigated with sintering temperature in the range of 1325~1345$^{\circ}C$. The varistor ceramics with increasing sintering temperature were more densified. A more densified varistors leaded to high stability for DC accelerated aging stress. Furthermore, the stability for DC accelerated aging stress was increased with the leakage current and dtan $\delta$/dV decreasing in order of 1325longrightarrow1335longrightarrow1345longrightarrow134$0^{\circ}C$ in sintering temperature. It was found that the stability for DC stress is affected more greatly by the leakage current and dtan $\delta$/dV than the densification. It is considered that the stability of varistors for DC stress can be estimated by considering the factors, such as the densification, leakage current, and dtan $\delta$/dV. As a result, the varistor sintered at 134$0^{\circ}C$ exhibited the highest stability, with %$\Delta$ $V_{lmA}$=-1.54%, %$\Delta$$\alpha$=-2.49%, %$\Delta$ $I_{\ell}$=+240.68%, 5%$\Delta$tan$\delta$=+29.96%.96%.96%.%.

• 한국전기전자재료학회논문지
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• 제14권7호
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• pp.572-577
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• 2001

The electrical properties of Pr$_{6}$ O$_{11}$ -based ZnO varistors consisting of ZnO-Pr$_{6}$ O$_{11}$ -CoO-Cr$_2$O$_3$-Er$_2$O$_3$ ceramics were investigated with sintering temperature in the range of 1325~f1345$^{\circ}C$. As sintering temperature is raised., the nonlinear exponent was increased up to 1335$^{\circ}C$, reaching a maximum 70.53, whereas raising sintering temperature further caused it to decrease, reaching a minimum 50.18 and the leakage current was in the range of 1.92~4.12 $\mu$A. The best electrical properties was obtained from the varistors sintered at 1335$^{\circ}C$, exhibiting a maximum (70.53) in the nonlinear exponent and a minimum (1.92 $\mu$A) in the leakage current, and a minimum (0.035) in the dissipation factor. On the other hand, the donor concentration was in the range of (0.90~1.14)x10$^{18}$ cm$^{-3}$ , the density of interface states was in the range of (2.69~3.60)x10$^{12}$ cm$^{-2}$ , and the barrier height was in the range of 0.77~1.21 eV with sintering temperature. With raising sintering temperature, the variation of C-V characteristic parameters exhibited a mountain type, reaching maximum at 134$0^{\circ}C$. Conclusively, it was found that the V-I, C-V, and dielectric characteristics of Pr$_{6}$ O$_{11}$ -based ZnO varistors are affected greatly by sintering temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.636-639
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• 2004

This paper presents the fabrication and performance evaluation of zinc oxide varistors for the arresters used for station system. ZnO varistors were fabricated with typical ceramic production methods and the structural and electrical characteristics were investigated. All varistors exhibited high density, which were in the range of $5.41{\sim}5.49g/cm^3$. In the electrical properties the reference voltage increased in the range of $4.410{\sim}5.250kV$ with increasing their thickness and the residual voltage exhibited the same trends as the reference voltage. In the long duration current impulse withstand test, E-2 and F-1 samples failed in the two and four shots, respectively, but E-1 and F-2 samples survived 18 shots during the test. Before and after this test, the variation ratio of residual voltage of E-1 and F-2 samples were -0.34% and 0.05%, respectively, which were in the acceptance range of 5%. According to the results of tests, it is thought that if the fabrication process such as insulating coating, sintering condition, and soldering method is improved, these ZnO varistors would be possible to apply to the station class arresters in the new future.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 센서 박막재료
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• pp.52-56
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• 2001

The Breakdown electric field of ZnO semiconductor devices in voltage-current characteristics was increased by increasing of additive materials. The specimen that has not additive materials was not formed spinel structure. The critical voltage that has not spinel structure was 235[V]. When the additive materials has 0.5 and 2[mol%], the Breakdown electric field was 840 and 758[V] in each additive materials. The Breakdown electric field of varistors as a factor of voltage and current was increased by addition of oxide antimony. The varistors that has oxide antimony was linearly increased in low electric field.

• 한국세라믹학회지
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• 제29권4호
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• pp.253-258
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• 1992

ZnO varistors were prepared by the organochemical method which used citric acid and ethylene glycol as gelling agents. The microstructure of the sintered specimens exhibited small grains, uniform grain size distribution, and few intragranular pores. Thermal decomposition of the organic resin formed during the powder preparation process was completed around 450$^{\circ}C$. No significant changes were observed in microstructure and current voltage characteristic with respect to calcination temperatures. A major advantage of the organochemical method used in this experiment is a possible uniform mixing of trace amounts of dopants. Therefore, this powder preparation method seems promising in investigating the effect of Li or In ion, which is added in ppm level to ZnO varistors, on the pulse respose characteristic.

• 한국전기전자재료학회논문지
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• 제18권10호
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• pp.896-901
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• 2005

The microstructure and electrical properties of praseodymium-based zinc oxide varistors were investigated at various cobalt oxide contents in the range of $0.5{\~}5.0 mol\%$. The ceramic density increased in the range of $5.25{\~}5.55 g/cm^3$ with increasing cobalt oxide content. The varistor doped with cobalt oxide of $1.0 mol\%$ exhibited the highest nonlinearity, with 66.6 in nonlinear exponent and 1.2 $\mu$A in leakage current. The donor concentration, density of interface states, and tamer height were in the range of $(1.06{\~}1.69){\times}10^{18}/cm^3$, $(3.11 {\~}3.56){\times}10^{12}/cm^2$, and 0.80${\~}$1.07 eV, respectively.

• The Korean Journal of Ceramics
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• 제4권1호
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• pp.47-52
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• 1998

The nonuniformity of energy absorption capability of ZnO varistor is systematically discussed in this paper. The nonuniformity of electrical characteristics and microstructure leads to decrease the energy absorption capability of ZnO varistor. The energy absorption capabilities were measured under different current waves, the experimental results stated that they have highly scattered phenomena. The influences of varistor surface area and nonuniformity of electrical characteristics to the energy absorption capability and the nonuniformity of commercial ZnO varistors were analyzed. There is a high nonuniformity existing in the energy absorption capability of commercial ZnO varistors.