• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.876-881
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• 2011

The sintering, defect and grain boundary characteristics of Bi-based ZnO chip varistor (1,608 mm size) have been investigated to know the possibility of lowering a manufacturing price by using 100 % Ag inner-electrode. The samples were prepared by general multilayer chip varistor process and characterized by shrinkage, SEM, current-voltage (I-V), admittance spectroscopy (AS), impedance and modulus spectroscopy (IS & MS) measurement. There are no problems to make a chip varistor with 100% Ag inner-electrode in the sintering temperature range of 850~900$^{\circ}C$ for 1 h in air. A good varistor characteristics ($V_n$= 9.3~15.4 V, a= 23~24, $I_L$= 1.0~1.6 ${\mu}A$) were revealed but formed $Zn_i^{{\cdot}{\cdot}}$(0.209 eV) as dominant defect, and increased the distributional inhomogeneity and the temperature instability in grain boundary barriers.

• Korean Journal of Materials Research
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• v.16 no.7
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• pp.416-421
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• 2006

The varistor properties of ZPCCL-based ceramics were investigated at different $La_2O_3$ contents in the range of $0{\sim}2.0$ mol%. As $La_2O_3$ content increased, the ceramic density greatly increased in the range of $4.71{\sim}5.77\;g/cm^3$ and the varistor voltage greatly decreased in the range of $503.5{\sim}9.4$ V. The varistor with 0.5 mol% $La_2O_3$ exhibited good nonlinearity, in which the nonlinear exponent is 81.6 and the leakage current is 0.2 ${\mu}A$. Furthermore, the varistors exhibited the high electrical stability, with $%{\Delta}V_{1mA}=-1.1%,%{\Delta}{\alpha}=-3.7%$, and $%{\Delta}I_L=+100%$ for DC accelerated aging stress condition of 0.95 $V_{1mA}/150^{\circ}C/24$ h.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.784-789
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• 2004

Bulk ZnO varistor based on Matsuoka, which varied $SiO_2$ addition has fabricated by standard ceramic process. The micro-electrode, which fabricated for investigation on degradation property of the Single Grain Boundary of ZnO varistor, has sticked by lithography semiconductor process. The values of AC degradation has measured with 150% operating voltage in varistor threshold with 120 minute in 60Hz. In here we observed V-I and V-C property in every 30minute. The operating voltage of Single Grain Boundary has shown in variable patterns in the characteristic of V-I Property. By increasing the $SiO_2$ contents, operating value has also increased and dominated on degradation proper. In EPMA analysis, we know that added $SiO_2$ was nearly distributed at the Grain Boundary. $SiO_2$ has gradually distributed in Grain Boundary condition during the process of crystal growth. It contributes to degradation depression and decision of operating voltage. We also demonstrated for using practical application and performance on distribution random loop based on V-I Properties in Single-Grain-Boundary.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.49-49
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• 2008

ZnO-based varistors have been widely used for voltage stabilization or transient surge suppression in electric power systems and electronic circuits. Recently, It has reported that the varistor behavior with nonlinear coefficient of 6~17 in Mn-doped ZnO. In this study we have chosen the composition of ZnO-$TeO_2-Mn_3O_4$ (ZTM) system to the purpose of whether varistor behavior appeared in doped ZnO by the solid state sintering or not. We investigated the sintering and electric properties of 0.5~3.0 at% Mn doped ZnO-1.0 at% $TeO_2$ system. Electrical properties, such as current-voltage (I-V), capacitance-voltage (C-V), and impedance spectroscopy were conducted. $TeO_2$ itself melts at $732^{\circ}C$ in air but forms the $ZnTeO_3$ phase with ZnO as increasing temperature and therefore retards the densification of ZnO to $1000^{\circ}C$. The average grain size of sintered samples was at about $3{\mu}m$ and decreased with increasing Mn contents. It was found that a good varistor characteristics were developed in ZTM system sintered at $1100^{\circ}C$ (nonlinear coefficient $\alpha$ ~ 60). The results of C-V characteristics such as barrier height ($\Theta$), donor density ($N_d$), depletion layer (W), and interface state density ($N_t$) in ZTM ceramics were $4\times10^{17}cm^{-3}$, 0.7 V, 40 nm, and $1.6\times10^{12}cm^{-2}$, respectively. It will be discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z(T)"-logf plots in ZTM system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.336-337
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• 2005

ZnO varistor ceramics were fabricated as a function of the amount of $Y_2O_3$ addition and sintered at $1250^{\circ}C$ for 2 hour. The average grain size was decreased from 14.2 ${\mu}m$ to 8.3 ${\mu}m$ with the amount of $Y_2O_3$ addition, and varistor voltage was increased from 433 V to 563 V with $Y_2O_3$ addition. Nonlinear coefficient a of all specimens were increased with the amount of $Y_2O_3$ more than 67, in case of $Y_2O_3$ 0.01wt% addition showed the excellent results of 87. And leakage current was less than $1{\mu}A$ at 82% of varistor voltage. The clamping voltage ratio of the specimens added 0.01wt% $Y_2O_3$ was 1.41 at 25A [8/20${\mu}s$]. At the specimen 0.01wt% $Y_2O_3$ addition. endurance of surge current and deviation of varistor voltage were 5700A/$cm^2$ and $\Delta$-2.86%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.415-418
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• 2001

The I-V characteristics and its stability of ZPCCL-based ceramic varistors doped with La$_2$O$_3$in the range of 0.0~4.0 mol% were investigated. The density of ceramics was increased in the range of 4.7~5.8 g/cm$^3$ with increasing La$_2$O$_3$content. As La$_2$O$_3$content is increased, the varistor voltage was decreased in the range of 503.49-9.42 V/mm up to 2.0 mol%, whereas increasing La$_2$O$_3$content further caused it to increase. The ZPCCL-based varistors were characterized by nonlinearity, in which the nonlinear exponent is in the range of 3.05~82.43 and leakage current is in the range of 0.24-100.22 $\mu$A. Among ZPCCL-based varistors, 0.5 mol% added-varistors exhibited an excellent nonlinearity, in which the nonlinear exponent is 82.43 and the leakage current is 0.24 $\mu$A. Furthermore, they exhibited a high stability, in which the variation rate of the varistor voltage and the nonlinear exponent was -1.11% and -6.72%, respectively, under DC stress, such as (0.80 V$_{1mA}$9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$115$^{\circ}C$//12h) +(0.90 V$_{1mA}$12$0^{\circ}C$//12h)+(0.95 V$_{1mA}$1$25^{\circ}C$//12h)+(0.95 V$_{1mA}$15$0^{\circ}C$//12h). Consequently, it was estimated that ZPCCL-based ceramics will be applied to development of Pr$_{6}$O$_{11}$ based ZnO varistors having a high performance.e.rformance.e.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.78-80
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• 2001

DC accelerating aging characteristics of praseodymium-based ZnO varistors doped with $Dy_2O_3$ were investigated with sintering time. The varistor sintered for 1h exhibited the highest nonlinearity, with a nonlinear exponent of 66.61 and a leakage current of $1.16{\mu}A$, whereas they did not exhibit relatively high stability. The varistor sintered for 2h having nonlinear exponent of 54.81 and leakage current of $2.52{\mu}A$ showed very excellent stability, which the variation rates of varistor voltage, nonlinear exponent, and leakage current are -1.19%, -4.00%, and +75.79% for 2h, under DC accelerated aging stress, such as ($0.85\;V_{1mA}/115^{\circ}C$/24h)+($0.90\;V_{1mA}/120^{\circ}C$/24h)+($0.95\;V_{1mA}/125^{\circ}C$/24h)+($0.95\;V_{1mA}/150^{\circ}C$/24h).

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.556-560
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• 1987

To enhance the breakdown properties of low voltage-oriented ZnO varistor, the samples were fabricated with the amounts of si-oxides and the sintering conditions. And then, to lower the breakdown voltage the $TiO_2$-added samples were fabricated. We investigated the nonlinear exponent, the nonlinear resistance and the V-I characteristics of samples. And we discussed with microstructures by use of SEM and the position of Si by EDS. Si-oxides, especially, largely enhanced the nonlinear exponent. In this case optimum sintering condition was $1200-1250^{\circ}C$-1hr and $TiO_2$ addition lowered the breakdown voltage.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.8
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• pp.477-486
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• 2000

This paper presents Pspice modeling methods for spark gaps and ZnO varistors and describes the application for the two-stage surge suppression circuit which was composed of the nonlinear components. The simulation modelings of nonlinear components were conducted on the basis of the voltage and current curves measured by the impulse current with the time-to-crest of $1~50 \mus$ and the impulse voltage with the rate of the time-to-crest of 10, 100 and 1000 V/\mus$. The firing voltages of the spark gap increased with increasing the rate of the time-to-crest of impulse voltage and the measured data were in good agreement with the simulated data. The I-V curves of the ZnO varistor were measured by applying the impulse currents of which time-to-crests range from 1 to $50 \mus$ and peak amplitudes from 10 A to 2 kA. The simulation modeling was based on the I-V curves replotted by taking away the inductive effects of the test circuit and leads. The meximum difference between the measured and calculated data was of the order of 3%. Also the two-stage surge suppression circuit made of the spark gap and the ZnO varistor was investigated with the impulse voltage of $10/1000\mus$$mutextrm{s}$ wave shape. The overall agreement between the theoretical and experimental results seems to be acceptable. As a consequence, it was known that the proposed simulation techniques could effectively be used to design the surge suppression circuits combined with nonlinear components.

• Korean Journal of Materials Research
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• v.15 no.11
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• pp.722-729
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• 2005

The electrical and dielectric stability of zinc oxide-based varistors were investigated with the cobalt oxide contents in the range of $0.5\~5.0 mo\l%$. As cobalt oxide contents increased, the ceramic density increased in the range of $5.25\~5.55g/cm^3$ and the varistor voltage decreased in the range of $235.3\~86.0V$. The varistor with on addition of cobalt oxide $1.0 mol\%$ exhibited good nonlinearity. in which the nonlinear exponent is 66.6 and the leakage current is $1.2{\mu}A$. Furthermore, the varistors exhibited the highest electrical and dielectric stability, with $\%{\Delta}V_{1mA}=-1.9\%,\;\%{\Delta}{\alpha}=-10.5\%,\;\%{\Delta}I_L=+275.0\%,\;and\;\%{\Delta}tna{\delta}=+55.6\%$, under DC accelerated aging $0.95V_{1mA}/150^{\circ}C/24h$.