• Title/Summary/Keyword: Varistor voltage $(V_c)$

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The Electrical Characteristics of ZnO varistor for d.c. Arrester (직류 피뢰기용 ZnO 소자의 전기적 특성)

  • Kim, Seok-Sou;Choi, Ike-Sun;Cho, Han-Gu
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.1106-1110
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    • 2003
  • The electrical characteristics of $A{\sim}C's$ ZnO varistors fabricated according to variable sintering condition, which sintering temperature is $l130^{\circ}C$ and speeds of pusher are A: 2mm/min, B: 4mm/min, C: 6 mm/min, respectively, were investigated. The varistor voltage of $A{\sim}C's$ ZnO varistors sintered at $1130^{\circ}C$ increased in order A < B $A{\sim}C's$ ZnO varistors exhibited below 2mA at rated voltage. Lightning impulse residual voltage of A's ZnO varistor suited standard characteristics, which is 3.85kV at 2.5kA, 4.4kV at 5kA and 5.16kV at 10kA. After multi lightning impulse residual voltage test of A's ZnO varistor exhibited good discharge characteristics which ZnO varistor reveals no evidence of puncture, flashover, cracking in visual examination. After high current impulse test of A's ZnO varistor exhibited good discharge characteristics, which variation rate of residual voltage is 0.4% before and after test, and revealed no evidence.

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A Development of ZnO Varistor for Railroad Vehicle d.c. Arrester (전철탑재형 직류피뢰기용 ZnO 바리스터의 개발)

  • Cho, I-Gon;Park, Choon-Hyun;Jung, Se-Young;Song, Tae-Kwon;Kim, Suk-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.552-556
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    • 2002
  • The microstructure and electrical characteristics of A~C's ZnO varistors fabricated according to variable sintering condition, which sintering temperature is $1130^{\circ}C$ and speeds of pusher are A: 2mm/min, B: 4mm/min, C: 6mm/min, respectively, were investigated. In the microstructure, A~C's ZnO varist-ors fabricated variable sintering condition was consisted of ZnO grain(ZnO), spinel phase$(Zn_{2.33}Sb_{0.67}O_4)$ Bi-rich $phase(Bi_{2}O_{3})$, wholly. Varistor voltage of A~C's ZnO varistors sintered at $1130^{\circ}C$ increased in order A < B < C's ZnO varistors. C's ZnO varistor exhibited good characteristics that nonlinear exponent is 31.70. Leakage current of A~C's ZnO varistors exhibited below 2mA at rated voltage. Lightning impulse residual voltage of A's ZnO varistor suited standard characteristics, which is 3.85kV at 2.5kA, 4.4kV at 5kA and 5.16kV at 10kA. After multi lightning impulse residual voltage test of A's ZnO varistor exhibited good discharge characteristics which ZnO varistor reveals no evidence of puncture, flashover, cracking in visual examination. After high current impulse test of A's ZnO varistor exhibited good discharge characteristics, which variation rate of residual voltage is 0.4% before and after test, and revealed no evidence.

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Development of ZnO Varistor for Distribution Surge Arrester (18kV, 5kA) (배전급 피뢰기(18kV, 5kA)용 ZnO 바리스터 소자 개발)

  • 박춘현;윤관준;조이곤;정세영;서형권
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.212-216
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    • 2000
  • ZnO varistors for distribution surge arrester (18kV, 5kA) were developed and tested microstructure and electrical characteristics. Microstructure of ZnO varistor was consisted of ZnO grain, spinel phase and Bi-rich phase. Average grain size of ZnO varistor was $\mu\textrm{m}$ Reference voltage and lightning impulse residual voltage of ZnO varistor exhibited a good haracteristics above 5.5kV and below 11.56kV, respectively. Consequently, discharge capacity which is the most important characteristics of ZnO varistor for surge arrester exhibited excellent properties above 70kA at twice high-current impulse test. Moreover, variation rate of reference voltage and lightning impulse residual voltage showed below 5% and 2% after high-current impulse test, respectively. Leakage current and watt loss of ZnO varistor will not increase during accelerated aging test at stress condition, such as 3.213kV/$115^{\circ}C$/1000h.

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Electrical and Microstructure Properties on Sintering Conditions of ZnO Varistor (소결 조건에 따른 ZnO 바리스터의 미세구조 및 전기적 특성)

  • Yoon, Jung-Rag;Chung, Tae-Serk;Lee, Heun-Young;Lee, Serk-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.7
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    • pp.662-666
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    • 2006
  • Microstructure and electrical properties of ZnO varistors as a function of sintering temperature and times were investigated. Sintering temperature and times greatly affected electrical properties and Bi-rich liquid phase of the microstructure. The varistor which were sintered at $1125^{\circ}C\sim1150^{\circ}C$, for 2 hr exhibited the varistor voltage$(V_c)$, nonlinear coefficient $(V_{10mA}/V_{1mA})$, leakage current$(I_L)$ dielectric constant and dissipation factor as $225\sim250V/mm,\;0.89\sim0.92,\;0.8\sim1.1{\mu}A,\;720\sim740\;and\;1.8\sim2.0%$, respectively.

A Study on the microstructure and Surge Characteristics of ZnO varistors for distribution Arrester (배전급 피뢰기용 ZnO 바리스터 소자의 미세구조 및 서지 특성에 관한 연구)

  • 김석수;조한구;박태곤;박춘현;정세영;김병규
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.2
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    • pp.190-197
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    • 2002
  • In this thesis, ZnO varistors with various formulation, such as A∼E, were fabricated according to ceramic fabrication method. The microstructure, electrical properties, and surge characteristics of ZnO varistors were investigated according to ZnO varistors with various formulation. In the microstructure, A∼E\`s ZnO varistor ceramics sintered at 1130$\^{C}$ was consisted of ZnO grain(ZnO), spinel phase (Zn$\_$2.33/Sb$\_$0.67/O$\_$4/), Bi-rich phase(Bi$_2$O$_3$) and intergranuler phase, wholly. Lightning impulse residual voltage of A, B, C and E\`s ZnO varistors suited standard characteristics, below 12kV at current of 5kA. On the contrary, D\`s ZnO varistor exhibited high residual voltage as high reference voltage. In the accelerated aging test, leakage current and watt loss of B, C and D\`s ZnO varistors increases abruptly with stress time under the first a.c. stress(115$\^{C}$/3.213kV/300h). Consequently, C varistor exhibited a thermal run away. On the contrary, leakage current and watt loss of A and C\`s ZnO varistors which show low initial leakage current exhibited constant characteristics. After high current impulse test, A\`s ZnO varistor has broken the side of varistor but impulse current flowed. On the contrary, E\`s ZnO Varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After long duration impulse current test, E\`s ZnO varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After high current impulse test and long duration impulse current test, E\`s ZnO varistor exhibited very good characteristics which variation rate of residual voltage is 1.4% before and after test.

Preparation of Low Voltage ZnO Varistor Using Seed Grain Method and Its Electrical Properties (종결정법을 이용한 저전압 ZnO 배리스터의 제조 및 전기적 특성)

  • 강승구;오재희
    • Journal of the Korean Ceramic Society
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    • v.25 no.5
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    • pp.552-560
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    • 1988
  • ZnO low voltage varistor was obtained by varying a) the amount of seed grains, b) the size of seed grains, and c) sintering temperature. Also, the optimum condition for fabricating the ZnO seed grains was studied. Large ZnO seed grains were obtained by washing a ZnO sintered body containing 1m/of BaCO3 in boiling water. When the seed grains were added, abnormal grain growth occurred, and the varistor voltage sharply decreased. However, when more than 5w/o of seed grain content was added, the varistor voltage gradually increased. When 10w/o seed grains of 75~106${\mu}{\textrm}{m}$ were added and sintered for 2 hours at 1200 to 125$0^{\circ}C$, low voltage varistor properties with V1mA/mm of 19V/mm and nonlinear exponent ($\alpha$) of 12 occurred.

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Electrical properties of ZnO varistors with sintering temperature (소결온도에 따른 ZnO varistor의 전기적 특성)

  • Cho, Hyun-Moo;Lee, Jong-Deok;Park, Sang-Man;Lee, Sung-Gap
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.307-308
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    • 2005
  • ZnO varistor ceramics were fabricated as a function of the sintering temperature from $1125^{\circ}C$ to $1200^{\circ}C$ with glass-frit 0.03wt% addition. The average grain size was increased from 10.4 ${\mu}m$ to 23.7 ${\mu}m$, and varistor voltage was decreased from 538 V to 329 V with rising of the sintering temperature. The nonlinear coefficient a showed similar value from 75 to 80 and leakage current of all specimens exhibited the result of $1{\mu}A$ at 82% of varistor voltage. But the clamping voltage ratio of the specimens sintered at $1175^{\circ}C$ was 1.37 at 25A [$8/20{\mu}s$]. Also, endurance of surge current and deviation of varistor voltage of sintered specimens at $1175^{\circ}C$ were $6400A/cm^2$, $\Delta$-3.32%, respectively.

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Environmental Properties of ZnO Varistors with Variation of Sintering Temperature (소결온도에 따른 ZnO 바리스터의 내환경 특성)

  • Lee, Sung-Gap;Cho, Hyun-Moo;Lee, Jong-Deok;Park, Sang-Man
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.12
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    • pp.1111-1116
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    • 2005
  • ZnO varistor ceramics added a glass-frit 0.03 $wt\%$ were fabricated with variation of sintering temperature. The sintering temperature and time were $1125^{\circ}C\~1200^{\circ}C$ and 2 h. The average grain sizes increased and the varistor voltage decreased with increasing the sintering temperature. The values of the specimen sintered at $1200^{\circ}C$ were $23.7\;{\mu}m$ and 329 V, respectively. The leakage current of all specimens was less than $1\;{\mu}A$ at DC $82\%$ of varistor voltage. The clamping voltage ratio of the specimen sintered at $1175^{\circ}C$ was 1.37. The endurance of surge current and the deviation of varistor voltage of the specimen sintered at $1175^{\circ}C$ were 6400 $A/cm^2$ and ${\Delta}-2.81\%$, respectively. After the High Temperature Load Test(HTLT) at $85^{\circ}C$ for 1000 h, the specimen sintered at $1175^{\circ}C$ showed the lowest deviation of varistor voltage of ${\Delta}-1.92\%$.

Effect of Cooling Rate on DC Accelerated Aging Characteristics of ZPCCY-Based Varistor Ceramics (ZPCCY계 바리스터 세라믹스의 DC 가속열화 특성에 미치는 냉각속도의 영향)

  • 남춘우;김향숙
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.9
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    • pp.776-782
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    • 2002
  • The microstructure, V-Ι characteristics, and stability of ZnO-P $r_{6}$ $O_{11}$ CoO-C $r_2$ $O_3$- $Y_2$ $O_3$-based varistor ceramics were investigated with cooling rate in the range of 2~8$^{\circ}C$/min. The cooling rate relatively weakly affected the microstructure, the varistor voltage, and the leakage current in the V-Ι characteristics. But the nonlinear exponent relatively strongly affected by cooling rate. The cooling rate also greatly affected the stability of V-Ιand dielectric characteristics for DC accelerated aging stress. On the whole, the varistors cooled with 4$^{\circ}C$/fin exhibited the highest performance in the densification, nonlinearity, and stability. Especially, they exhibited a high stability, in which the variation rate of the varistor voltage( $V_{1㎃}$), the nonlinear exponent($\alpha$), and the dissipation factor(tan $\delta$) is -1.4%, -4.9%, and +60.0%, respectively, under DC accelerated aging stress such as 0.95 $V_{1㎃}$15$0^{\circ}C$/12 h)

Characteristics on the Surge Capability of Bi-based Varistor Fabricated with ZnO Nano-powder (ZnO 나노분말로 제조한 Bi계 바리스터의 써지내량 특성)

  • Wang, Min-Sung;Park, Choon-Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.9
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    • pp.862-867
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    • 2006
  • Bi-based nano-varistors and micro-varistors fabricated with each ZnO nano-powder and micro-powder were studied about characteristics on the surge capability in this study. ZnO nano-varistors were sintered in air at $1050^{\circ}C$ for 2 hr. The voltage-current and residual voltage properties of ZnO nano-varistor were compared with their of ZnO micrio-varistor. As a result of these properties, our ZnO nano-varistor has about 3 times at operating voltage as compared with conventional ZnO varistor fabricated with micro-powder and the residual voltage was 8.06 kV at nominal discharge current 101kA in the lighting impulse current test. And then the residual voltage rate 1.72 of our nano-varistor has had better performance than the 1.79 of micro-varistor because ZnO nano-varistor has shown much quick response property because of increasing effective cross-section area. Also, to analysis surge capability took thermal images for pyrexia temperature distribution with each of the varistors after operating varistors. Nano-varistor doesn't have shown local overheating and can confirm accurate temperature grade on the surface of its.