• Journal of Advanced Marine Engineering and Technology
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• v.32 no.1
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• pp.147-152
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• 2008

This paper has been fabricated the two different type of variable attenuators using a characteristics of a 3 dB directional coupler and pin diodes. One was not analyzed using the conventional even-odd modes but used simple two-port techniques. The resulting scattering parameters described operation characteristics for the general case where the terminating impedances are equal and unequal. After analyzing resistor role of the ${\pi}$ type fixed attenuator. this paper used a pin diode instead of a resistor. The variable attenuators were fabricated using pin diodes for current-controlled attenuation on the coupled ports of a 3 dB branch-line coupler and ${\pi}$ type fixed attenuator. The realized variable attenuators have more than 33 dB attenuation ranges at 2.1 GHz. and the input and output reflection coefficients are less than -13 dB. These results could be applied to mobile communication systems. It can be varied gain of the power amplifier according to change a outdoor environmental temperature and improved linearity.

• ETRI Journal
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• v.29 no.2
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• pp.212-218
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• 2007

A novel low-voltage CMOS current feedback operational amplifier (CFOA) is presented. This realization nearly allows rail-to-rail input/output operations. Also, it provides high driving current capabilities. The CFOA operates at supply voltages of ${\pm}0.75V$ with a total standby current of 304 ${\mu}A$. The circuit exhibits a bandwidth better than 120 MHz and a current drive capability of ${\pm}1$ mA. An application of the CFOA to realize a new all-pass filter is given. PSpice simulation results using 0.25 ${\mu}m$ CMOS technology parameters for the proposed CFOA and its application are given.

• ETRI Journal
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• v.30 no.4
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• pp.526-534
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• 2008

This paper presents a fully integrated 0.13 ${\mu}m$ CMOS MB-OFDM UWB transmitter chain (mode 1). The proposed transmitter consists of a low-pass filter, a variable gain amplifier, a voltage-to-current converter, an I/Q up-mixer, a differential-to-single-ended converter, a driver amplifier, and a transmit/receive (T/R) switch. The proposed T/R switch shows an insertion loss of less than 1.5 dB and a Tx/Rx port isolation of more than 27 dB over a 3 GHz to 5 GHz frequency range. All RF/analog circuits have been designed to achieve high linearity and wide bandwidth. The proposed transmitter is implemented using IBM 0.13 ${\mu}m$ CMOS technology. The fabricated transmitter shows a -3 dB bandwidth of 550 MHz at each sub-band center frequency with gain flatness less than 1.5 dB. It also shows a power gain of 0.5 dB, a maximum output power level of 0 dBm, and output IP3 of +9.3 dBm. It consumes a total of 54 mA from a 1.5 V supply.

• Journal of IKEEE
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• v.13 no.1
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• pp.41-48
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• 2009

This paper describes an implementation of the analog front end (AFE) incorporated with the image signal processing (ISP) unit in the SoC, dominating the performance of the CCD image sensor system. New schemes are exploited in the high-frequency sampling to reduce the sampling uncertainty apparently as the frequency increases, in the structure for the wide-range variable gain amplifier (VGA) capable of $0{\sim}36\;dB$ exponential gain control to meet the needed bandwidth and accuracy by adopting a new parasitic insensitive capacitor array. Moreover, the double cancellation of the black-level noise was efficiently achieved both in the analog and the digital domain. The proposed topology fabricated in a $0.35-{\mu}m$ CMOS process was proved in a full CCD camera system of 10-bit accuracy, dissipating 80 mA at 15 MHz with a 3.3 V supply voltage.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.1
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• pp.45-51
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• 2009

A low-voltage, low-power analog CMOS front-end for a cardiac pacemaker is proposed. The circuits include a 4th order switched-capacitor (SC) filter with a passband of 80-120 Hz and a SC variable gain amplifier whose control range is from 0 to 24-dB with 0.094 dB step. An inverter-based switched-capacitor circuit technique is used for low-voltage operation and ultra-low power consumption, and correlated double sampling technique is used for reducing the finite gain effect of an inverter. The proposed circuit has been designed in a $0.35-{\mu}m$ CMOS process, and it achieves 80-dB SFDR at 5-kHz sampling frequency. The power consumption is only 330 nW at 1-V power supply.

• ETRI Journal
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• v.31 no.6
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• pp.717-724
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• 2009

This paper describes a 1.2 V 12 b 60 MS/s CMOS analog front-end (AFE) employing low-power and flexible design techniques for image signal processing. An op-amp preset technique and programmable capacitor array scheme are used in a variable gain amplifier to reduce the power consumption with a small area of the AFE. A pipelined analog-to-digital converter with variable resolution and a clock detector provide operation flexibility with regard to resolution and speed. The AFE is fabricated in a 0.13 ${\mu}m$ CMOS process and shows a gain error of 0.68 LSB with 0.0352 dB gain steps and a differential/integral nonlinearity of 0.64/1.58 LSB. The signal-to-noise ratio of the AFE is 59.7 dB at a 60 MHz sampling frequency. The AFE occupies 1.73 $mm^2$ and dissipates 64 mW from a 1.2 V supply. Also, the performance of the proposed AFE is demonstrated by an implementation of an image signal processing platform for digital camcorders.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.12
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• pp.91-96
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• 2011

In this paper, a low-power direct-conversion transmitter based on current-mode operation, which satisfies the IEEE 802.15.4 standard, is proposed and implemented in a $0.13{\mu}m$ CMOS technology. The proposed transmitter consists of DACs, LPFs, variable gain I/Q up-conversion mixer, a divide-by-two circuit with LO buffer, and a drive amplifier. By combining DAC, LPF, and variable gain I/Q up-conversion mixer with a simple current mirror configuration, the transmitter's power consumption is reduced and its linearity is improved. The drive amplifier is a cascode amplifier with gain controls and the 2.4GHz I/Q differential LO signals are generated by a divide-by-two current-mode-logic (CML) circuit with an external 4.8GHz input signal. The implemented transmitter has 30dB of gain control range, 0dBm of maximum transmit output power, 33dBc of local oscillator leakage, and 40dBc of the transmit third harmonic component. The transmitter dissipates 10.2mW from a 1.2V supply and the die area of the transmitter is $1.76mm{\times}1.26mm$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.1
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• pp.92-97
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• 2009

Low power consumption is crucial for medical implantable devices. A low-power 4th-order band-pass Gm-C filter with distributed gain stage for the sensing stage of the implantable cardiac pacemaker is proposed. For the implementation of large-time constants, a floating-gate operational transconductance amplifier with current division is employed. Experimental results for the filter have shown a SFDR of 50 dB. The power consumption is below $1.8{\mu}W$, the power supply is 1.5 V, and the core area is $2.4\;mm{\times}1.3\;mm$. The filter was fabricated in a 1-poly 4-metal $0.35-{\mu}m$ CMOS process.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.23 no.5
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• pp.109-114
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• 2023

In this paper, a 2-channel Image-Reject receiver using a 65-nm CMOS process is presented for Ka-band compact radars. The designed receiver consists of Low-Noise Amplifier (LNA), IQ mixer, and Analog Baseband (ABB). ABB includes a complex filter in order to suppress unwanted images, and the variable gain amplifiers (VGAs) in RF block and ABB have gain tuning range from 4.5-56 dB for wide dynamic range. The gain of the receiver is controlled by on-chip SPI controllers. The receiver has noise figure of <15 dB, OP1dB of >4 dBm, image rejection ratio of >30 dB, and channel isolation of >45 dB at the voltage gain of 36 dB, in the Ka-band target frequency. The receiver consumes 420 mA at 1.2 V supply with die area of 4000×1600 ㎛.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.1
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• pp.122-130
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• 2015

This paper presents a 6 Gb/s 4-channel arrayed transimpedance amplifiers (TIA) with the gain control for 4-channel passive optical network in $0.13{\mu}m$ complementary metal oxide semiconductor (CMOS) technology. A regulated cascode input stage and inductive-series peaking are proposed in order to increase the bandwidth. Also, a variable gain control is implemented to provide flexibility to the overall system. The TIA has a maximum $98.1dB{\Omega}$ gain and an input current noise level of about 37.8 pA/Hz. The die area of the fabricated TIA is $1.9mm{\times}2.2mm$ for 4-channel. The power dissipation is 47.64 mW/1ch.