• Journal of the Korean Society of Clothing and Textiles
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• v.23 no.5
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• pp.694-702
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• 1999

By using commercial available electromagnetic interference (EMI) shielding fabrics, EMI shielding effectiveness(SE) and the physical properties were investigated. Thirteen specimens were chosen six fabrics were non-electrolytic plated with Cu, six plated with Cu+Ni and one plated with Ni, SE was measured by RF Impedance Analyzer HP4291A(Hewlett Co, Ltd)at the frequency of 100MHz-1.8GHz. The results showed that the commercial EMI shielding fabrics provided SE values over 30dB at the frequency of 100MHz-1.8GHz. Fabrics plated with Cu showed more effective shielding than those plated with Ni. The thickness of coating and fabric count were also influential factors on SE. Tensile properties were acceptable for lining fabrics but water vapor transport properties indicated that the better treatment condition were suggested to improve comfort properties.

• Korean Journal of Materials Research
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• v.9 no.3
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• pp.295-300
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• 1999

액상의 Ga으로부터 공급되느 기체상태의 Ga과 $NH _3$를 $1050~1150^{\circ}C$의 온도범위에서 직접 반응시켜 사파이어 기판위에 직경이 5~27$\mu\textrm{m}$이고, 높이가 $2~27\mu\textrm{m}$인 육각기둥 형태의 GaN 결정을 성장하였다. GaN 결정의 성장 초기에는 c-축 방향으로 우선 성장된 후 성장시간과 성장온도 및 $NH_3$의 유량이 증가함에 따라 기체상태의 Ga공급이 제한됨으로써 성장률이 둔화됨과 동시에 $\alpha$-축 방향으로 우선 성장되었다. GaN 결정의 크기가 증가함에 따라 결정의 품질이 개선되어 X-선 회절강도와 중성도너에 구속된 엑시톤 관력 발광밴드 (I\ulcorner)의 강도가 증가하고, I\ulcorner 발광밴드의 반치폭이 감소하였다.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.13 no.5
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• pp.422-430
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• 2001

In the present study, an evaporative generation process of ammonia-water solution film on the vertical plate was analysed. For the utilization of waste heat, hot water of low temperature was used as the heat source. The continuity, momentum, energy and diffusion equations for the solution film and vapor mixture were formulated in integral forms and solved numerically. Counter-current solution-vapor flow resulted in the refrigerant vapor of the higher ammonia concentration than that of co-current flow. Eve the rectification of refrigerant vapor was observed near the inlet of solution film in counter-current flow. For the optimum operation of generator using hot water, numerical experiments, based on the heat exchange and generation efficiencies. revealed the inter-relationships among the Reynolds number of the solution film and hot water, and the length of generator. Enhancement of heat and mass transport in the solution film was found to be very effective for the improvement of generation performance, especially at high solution flow rate.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.42-43
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• 2011

Improvement of the photovoltaic efficiency via exposure of organic solar cells to solvent-vapor at room temperature is reported. Carbon disulfide ($CS_2$) vapor treatment can induce Poly(3-hexylthiophene) (P3HT) self-organization into ordered structure leading to enhanced hole transport and light absorption. The power conversion efficiency (PCE) of the organic solar cells can be increased from 0.89 to 1.67% by solvent-vapor treatment.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.281-289
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• 2004

The temperature hump is found to be most efficient in suppressing parasitic nucleation. With the temperature humps, there are found to be observed in undersaturations along the transport path for convective-diffusive processes ranging from $D_{AB}$ = 0.0584 $\textrm{cm}^2$/s to 0.584 $\textrm{cm}^2$/s, axial positions from 0 to 7.5 cm. With decreasing Ar = 5 to 3.5, the temperature difference is increased because of the imposed nonlinear temperature profile but the rate is decreased. For 2 $\leq$ Ar $\leq$ 3.5, the rate is increased with the aspect ratio as well as the temperature difference. Such an occurrence of a critical aspect ratio is likely to be due to the effect of sidewall and much small temperature difference. The rate is decreased exponentially with the aspect ratio for 2 $\leq$ Ar $\leq$ 10. Also, the rate is exponentially decreased with partial pressure of component B, P for 1 $\leq$ P $\leq$ 100 Torr.$ B/ $\leq$ 100 Torr.

• Proceedings of the Membrane Society of Korea Conference
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• 2001.05a
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• pp.68-71
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• 2001

• Proceedings of the Membrane Society of Korea Conference
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• 2001.11a
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• pp.67-70
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• 2001

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.5
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• pp.163-167
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• 2020

Ring-shaped SiC (Silicon carbide) polycrystals used as an inner material in semiconductor etching equipment was manufactured using the PVT (Physical Vapor Transport) method. A graphite cylinder structure was placed inside the graphite crucible to grow a ring-shaped SiC polycrystal by the PVT method. The crystal polytype of grown crystal were analyzed using a Raman and an UVF (Ultra Violet Fluorescence) analysis. And the microstructure and components of SiC crystal were identified by a SEM (Scanning Electron Microscope) and EDS (Energy Disruptive Spectroscopy) analyses. The grain size and growth rate of SiC polycrystals fabricated by this method was varied with temperature variation in the initial stage of growth process.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.248-248
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• 2011

ZnO was grown on a Au-catalyzed Si(100) substrate by using a simple vapor phase transport (VPT) with a mixture of zinc oxide and graphite powders. The ZnO grown at 800$^{\circ}C$ had a soccer ball structure with diameters of <500 nm. The ZnO soccer ball structure was, for the first time, observed in this work. The optical properties of the ZnO soccer balls were investigated by photoluminescence (PL). In the room-temperature (RT) PL of the ZnO soccer balls, a strong near-band-edge emission (NBE) and a weak deep-level emission were observed at 3.25 and 2.47 eV (green emission), respectively. The weak deep-level emission (DLE) at around 2.47 eV (green emission) is caused by impurities and structural defects. The FWHM of the NBE peak from the ZnO soccer balls was 110 meV. In addition, the PL intensity ratio of the NBE to DLE was about 4. The temperature-dependent PL was also carried out to investigate the mechanism governing the quenching behavior of the PL spectra.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.1
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• pp.32-34
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• 2015

AlN Single Crystal were grown by PVT (Physical vapor transport) method on bulk seed. It was performed by high-frequency induction-heating coil. AlN source powder was loaded at bottom side of the carbon crucible and the crystal seed was loaded at the upper side of the crucible. The temperature conditions of the growth was varied $2000{\sim}2100^{\circ}C$ and the surrounding pressure was $1{\times}10^{-1}{\sim}200$ Torr. And the hot-zone of the heating position was controlled elaborately according to growth. The 17 mm-diameter, 7 mm-thickness AlN single crystal is obtained for about 600 hours growing. It was recognized that the growth direction of as grown crystal was R[011] by the Laue X-Ray camera measurement.