• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
• /
• pp.48-51
• /
• 2004

In this paper the importance of re-nitridation on a plasma-enhanced chemical-vapor deposited(PECVD) $SiO_2$ stacked on a thermally grown thin-nitrided $SiO_2$ on n-type 4H SiC have been investigated. Without the final re-nitridation process, the leakage current of metaloxidesemiconductor(MOS) was extremely large. It is believed that water and carbon, contamination from the low-thermal budget PECVD process, are the main factors that destroyed the high quality thin-buffer nitrided oxide. After re-nitridation annealing, the quality of the stacked gate oxide was improved. The reasons of this improvement are presented.

• Journal of Advanced Marine Engineering and Technology
• /
• 제20권3호
• /
• pp.91-100
• /
• 1996

Experimental results for forced convection condensation of non-azeotropic refrigerant mixtures inside a horizontal smooth tube are presented. The mixtures of R-22+R-134a and pure refrigerants R-22 and R-134a are used as the test fluids and a double pipe heat exchanger of 7.5mm ID and 4800mm long inside tube is used. The range of parameters are 100-300kg/h of mass flow rate, 0-1.0 of quality, and 0, 33, 50, 67, and 100 weight percent of R-22 mass fraction in the mixtures. The heat flux, vapor pressure, vapor temperature and tube wall temperature were measured. Using the data, the local and average heat transfer coefficients for the condensation have been obtained. In the same given experimental conditions, the liquid heat transfer coefficients for NARMs were considerally lower than that of the pure refrigerant of R-22 and R-134a. Local heat transfer characteristics for NARMs were different from pure refrigerant R-22 and R-134a. In some regions, local heat transfer coefficients for NARMs were increased in the following order ; Bottom$\rightarrow$Top$\rightarrow$Side. The condensation heat transfer coefficients for NARMs increased with mass velocity, heat flux, and quality, but were considerably lower than that of pure refigerant R-22 and R-134a.

• 설비공학논문집
• /
• 제11권5호
• /
• pp.658-668
• /
• 1999

The objective of the present study is to investigate the effect of experimental parameters on the hydrodynamic characteristics in a horizontal tee-type evaporator using R-22. The experimental apparatus consisted of an unheated tee-type test section, a liquid-vapor separator, a preheated, mass flow meters, a plate heat exchanger, pump, and other measurement devices. The experimental parameters were mass flux(500 and 600kg/$m^2$s), inlet quality(0.1~0.3) and separation ratio(0.3~0.7). Absolute pressure at the inlet of the test section was 0.652 MPa. The branch-to-inlet inner diameter ratio was 0.61. Pressure gradient at the branch section was larger than that at the run section at the same separation ratio. Pressure drop per unit length increased at the run section and decreased at the branch section as the separation ratio increased. Pressure drop predicted by the separated flow model agreed with experimental data within -35 to +16%. Generally, predicted values showed similar trend with the data. Mass flow ratio of vapor refrigerant was affected by the inlet quality more than the mass flux.

• International Journal of Air-Conditioning and Refrigeration
• /
• 제17권3호
• /
• pp.81-87
• /
• 2009

The effect of oil on convective boiling of R-123 in an enhanced tube bundle is experimentally investigated at $26.7^{\circ}C$ saturation temperature. The enhanced tube had pores (0.23 mm diameter) and connecting gaps (0.07 mm width), which had been optimized using pure R-123. The effects of oil concentration (0 to 5%), heat flux (10 to $40\;kW/m^2$), mass velocity (8 to $26\;kg/m2^s$) and vapor quality are investigated. The oil significantly reduces the bundle boiling heat transfer coefficient. With 1% oil, the reduction is approximately 35%. Further addition of oil further reduces the heat transfer coefficient. The data are also compared with the pool boiling counterpart. The reduction in the heat transfer coefficient is smaller in a bundle (convective boiling) than in a pool (single-tube pool boiling), with larger difference at a smaller heat flux. Similar to pure R-123 case, the effects of mass velocity and vapor quality are negligible for the convective boiling of R-123/oil mixture.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2011년도 추계학술발표대회
• /
• pp.16.2-16.2
• /
• 2011

Graphene has attracted significant attention due to its unique characteristics and promising nanoelectronic device applications. For practical device applications, it is essential to synthesize high-quality and large-area graphene films. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on metal substrates such as Ni, Cu, Ru etc. The CVD has advantages over some of other methods in terms of mass production on large-areas substrates and it can be easily separated from the metal substrate and transferred to other desired substrates. Especially, plasma-enhanced CVD (PECVD) can be very efficient to synthesize high-quality graphene. Little information is available on the synthesis of graphene by PECVD even though PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures such as carbon nanotubes and nanosheets. In this study, we synthesized graphene on $Ni/SiO_2/Si$ and Cu plate substrates with CH4 diluted in $Ar/H_2$ (10%) by using an inductively-coupled PECVD (ICPCVD). High-quality graphene was synthesized at as low as $700^{\circ}C$ with 600 W of plasma power while graphene layer was not formed without plasma. The growth rate of graphene was so fast that graphene films fully covered on substrate surface just for few seconds $CH_4$ gas supply. The transferred graphene films on glass substrates has a transmittance at 550 nm is higher 94%, indicating 1~3 monolayers of graphene were formed. FETs based on the grapheme films transferred to $Si/SiO_2$ substrates revealed a p-type. We will further discuss the synthesis of graphene and doped graphene by ICPVCD and their characteristics.

• 품질경영학회지
• /
• 제43권3호
• /
• pp.359-372
• /
• 2015

Purpose: Through studying the expert's and non-experts panel responses to the questions regarding the attributes of chemical-biological protection cloth quality in terms of the levels of customer demand and technical factors has been studied. We are applied to a QFD matrix with find out the relationship between the selective removal efficiency of chemical-biological cloth and the guidelines of technical approach. Methods: We fabricated several composite of ion-exchange resins with selectively permeable performance designed to facilities water vapor transport and selective adsorption of the harmful gases. With these materials, we characterized on the selectively permeable performance to identify ion-exchange resin with chemical-biological protective cloth. Results: Results showed that ion exchange materials possessed performance with selectively efficiencies as NH3, SOx, NOx and HCl gas. The selective adsorption amount of ammonia and hydrogen gases were $90-80{\mu}g/g$ with TRILITE SCR-BH sulfonated ion exchange resin. The PP non-woven/ion exchange resin adsorbent materials possessed performance with water vapor permeability were 1,100-1,350 g/m2/day, it's was two times high value compare with activated carbon. With these materials, we characterized selectively removal efficiency to identify new ion-exchange material with chemical-biological protective capability. Conclusion: This study shows that a QFD aids in deciding with of the adsorption parameters to optimized with chemical-biological protection cloth manufacturing.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.364.1-364.1
• /
• 2016

We report the characteristics of individual ultra-long SnO2 nanowires(NWs) grown on sapphire(0001) substrates by vapor transport method. NWs, with typical lengths of >$400{\mu}m$, grew in the form of NW bundles under a hydrogen reducing atmosphere, without metal catalysts. The individual NWs were examined using high-resolution X-ray diffraction, transmission electron microscopy, and micro-Raman spectroscopy. The results revealed that the SnO2 NWs grew as high-quality, tetragonal-rutile-phase single crystals with mosaic distributions of $0.02^{\circ}$ and $0.026^{\circ}$ in the (101) and (110) planes, respectively.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
• /
• pp.315-318
• /
• 2004

We developed a vapor induced crystallization (VIC) process for the first time to obtain high quality polycrystalline Si films by sublimating the mixture of $AlCl_3$ and $NiCl_2$. The VIC process enhanced the crystallization of amorphous silicon thin films. The LPCVD amorphous silicon thin films were completely crystallized after 5 hours at 480 $^{\circ}C$. It is known that needle-like grains with very small width grow in the Ni-metal induced lateral crystallization. In our new method, the width of grains is larger because the grain can also grow perpendicular to the needle growth direction. Also the interface between the merging grain boundaries was coherent. As the results, a polycrystalline film with superior microstructure has been obtained.

• 한국표면공학회지
• /
• 제33권2호
• /
• pp.69-76
• /
• 2000

The rf plasma chemical vapor deposition is a common method employed for diamond or amorphous carbon deposition. Diamond possesses the strongest bonding, as exemplified by a number of unique properties-extraordinary hardness, high thermal conductivity, and a high melting tempera tore. Therefore, it is very important to investigate the synthesis of semiconducting diamond and its use as semiconductor devices. An inductively coupled rf plasma CVD system for producing amorphous carbon films were developed. Uniform temperature and concentration profiles are requisites for the deposition of high quality large-area films. The system consists of rf matching network, deposition chamber, pumping lines for gas system. Gas mixtures with methane, and hydrogen have been used and Si (100) wafers used as a substrate. Amorphous carbon films were deposited with methane concentration of 1.5% at the process pressure of S torr~20 torr, and process temperature of about $750^{\circ}C$. The nucleation and growth of the amorphous carbon films have been characterized by several methods such as SEM and XRD.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2002년도 춘계학술대회 논문집
• /
• pp.914-917
• /
• 2002

Fabrication of micro carbon structures and patterns using laser-assisted chemical vapor deposition is studied. Argon ion laser and ethylene were used to grow micro carbon rod through pyrolytic decomposition of the reaction gas. The influence of reaction gas pressure and incident laser power on the diameter and growth rate of the micro carbon rod was experimentally investigated. The diameter of micro carbon rods increases linearly with respect to the laser power but is almost independent of the reaction gas pressure. Growth rate of the rod changes little with gas pressure when the laser power remains below 1W. When the carbon rod was grown at near threshold laser power, a very smooth surface is obtained on the rod. By continuously moving the focusing lens in the direction of growth, a micro carbon rod with a diameter of 28 ${\mu}{\textrm}{m}$ and aspect ratio of 100 was fabricated.