• 한국산학기술학회논문지
• /
• 제17권9호
• /
• pp.502-507
• /
• 2016

이산화바나듐은 섭씨 68도에서 금속-절연체 상전이 특성을 나타내는 써모크로믹(thermochromic) 소재로서, 상전이 현상이 일어날 때 광학적, 전기적 성질이 급격히 변화하며, 이러한 상전이 현상은 가역적인 특성을 가지고 있다. 이산화바나듐의 금속-절연체 상전이 현상을 응용하기 위하여 상전이 온도를 상온 부근으로 낮추고자하는 많은 시도들이 있었으며, 직경 100 nm의 1차원 나노구조를 갖는 이산화바나듐 나노와이어의 경우 $29^{\circ}C$ 근처에서 상전이 현상이 일어남이 보고되었다. 본 연구에서는 기상 수송 방법(vapor transport method)을 사용하여 1차원 또는 2차원 나노구조를 갖는 이산화바나듐을 성장시켰다. 특히 동일한 성장 조건에서도 기판에 따라 다른 형태로 이산화바나듐이 성장하는 것을 확인하였다. 즉 Si 기판($Si{\setminus}SiO_2$(300 nm) 위에서는 1차원 나노와이어 형태의 이산화바나듐이 성장하였고, 그래핀 나노시트 위에서 합성된 이산화바나듐은 2차원 또는 3차원 나노구조를 가지고 성장하였다. 바나듐 옥사이드 나노구조체의 성장에 사용된 Si 웨이퍼 위에 박리-전사된 그래핀 나노시트 기판과 thermal CVD 시스템으로 성장된 1D 또는 2D & 3D 나노 구조를 갖는 $VO_2$의 결정학적 특성을 Raman 분광학으로 분석하였다. Raman 분석결과 성장된 바나듐 옥사이드는 $VO_2$ 상을 갖는 것을 확인하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.309-309
• /
• 2012

Heteroepitaxial growth remains as one of the continuously growing interests, because the heterogeneous crystallization on different substrates is a common feature in the fabrication processes of many semiconductor materials and devices, such as molecular beam epitaxy, pulsed laser deposition, sputtering, chemical bath deposition, chemical vapor deposition, hydrothermal synthesis, vapor phase transport and so on [1,2]. By using the R.F. sputtering system, ZnO thin films were deposited on graphene 4 and 6 mono layers, which is grown on 400 nm and 600 nm $SiO_2$ substrates, respectively. The ZnO thin layer was deposited at various temperatures by using a ZnO target. In this experimental, the working power and pressure were $3{\times}10^{-3}$ Torr and 50 W, respectively. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen and argon gas flows were controlled around 5 and 10 sccm by using a mass flow controller system, respectively. The structural properties of the samples were analyzed by XRD measurement. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system. The surface morphologies were observed using field emission scanning electron microscope (FE-SEM).

• 한국유체기계학회 논문집
• /
• 제18권1호
• /
• pp.65-71
• /
• 2015

The purpose of this study is to investigate cavitating flow of the multistage centrifugal pump. Cavitation is observed in the impeller leading edge and trailing edge of the suction area. Head coefficients are measured under different flow operating conditions. The Rayleigh-Plesset cavitation model is adapted to predict the occurrence of cavitation in the pump. The two-phase gas-liquid homogeneous CFD method is used to analyze the centrifugal pump performances with two equation transport turbulence model. The simulations are carried out with three different flow coefficients such as 0.103, 0.128 and 0.154. The occurrence of cavitation described according to water vapor volume fraction. The head versus NPSH (Net Positive Suction Head) also measured using different flow coefficients. Development of cavitation in the centrifugal pump impellerI is discussed. It is showed that the simulation represents the head drop about 3%.

• 한국해양환경ㆍ에너지학회지
• /
• 제19권1호
• /
• pp.52-61
• /
• 2016

대용량의 $CO_2$를 지중에 저장하기 위한 CCS(Carbon Capture and Storage)는 고압의 파이프라인 수송공정을 수반한다. 또한, 사고 및 유지보수와 같은 비정상상태가 발생할 경우 고압의 $CO_2$를 대기 중으로 방출시키는 감압공정이 필요하다. 본 연구에서는 고압 $CO_2$ 파이프라인에서의 감압현상을 수치해석적 방법을 이용하여 분석하였다. 수치계산 결과를 실험데이터와 비교분석함으로써 수치해석의 예측 능력을 검증하였다. 수치모델이 기체-액체 혼합 구간에서의 2상 감압현상을 잘 예측하였다. 그러나 초임계 액체 단상 감압과 기체 단상 감압현상에 대해서는 온도변화 등을 예측하는데 한계가 있음을 밝혔다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
• /
• pp.230-233
• /
• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
• /
• pp.234-237
• /
• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility,carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집
• /
• pp.234-237
• /
• 2001

FeSi$_2$/Si Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.871ev at 300 K. The Hall effect is a physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important Part for it application Various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집
• /
• pp.230-233
• /
• 2001

FeSi$_2$ Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.87leV at 300 K. The Hall effect is a Physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E.H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it application various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2004년도 춘계학술대회
• /
• pp.1693-1696
• /
• 2004

Synchrotron X-ray micro-imaging technique was employed to monitor non-invasively the refilling process of water inside the xylem vessels in bamboo leaves. The consecutive phase-contrast X-ray images clearly show both plant anatomy and the transport of water inside the xylem vessels. Traces of water-rise, vapor bubbles and variations of contact angle between the water front and the xylem wall were measured in real time. During the refilling process, air bubbles are removed when the rising water front halts at a vessel end for a while. Subsequently, it starts rising again at a higher velocity than the normal refilling speed. Repeated cavitation seems to deteriorate the refilling ability in xylem vessels. In dark environment, the water refilling process in xylem vessels is facilitated more effectively than in bright illuminated conditions. Finally, X-ray micro-imaging was famed to be a powerful, high resolution, real time imaging tool to investigate the water refilling process in xylem vessels.

• 한국세라믹학회지
• /
• 제20권2호
• /
• pp.115-122
• /
• 1983

There has been many controversies about the effects of additive in sintering of SiC But no prior systematic work has been reported about the difference between the effects of B and $B_4C$ as additive. The sintering behavior of SiC and its strength are studied and the optimum concentrations of additives and sintering conditions for SiC are determined. The effects of B and $B_4C$ have same effects on reactive sintering of SiC except the easiness of transport via vapor phase for uniform distribution in case of B. The strength of sintered SiC without exaggerated grain growth is limited by surface flaws and is nearly independent of temperature up to 140$0^{\circ}C$.