• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.9
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• pp.502-507
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• 2016

Vanadium dioxide, $VO_2$, is a thermochromic material that exhibits a reversible metal-insulator phase transition at $68^{\circ}C$, which accompanies rapid changes in the optical and electronic properties. To decrease the transition temperature around room temperature, a number of studies have been performed. The phase transition temperature of 1D nanowire $VO_2$ with a 100 nm diameter was reported to be approximately $29^{\circ}C$. In this study, 1D or 2D nanostructured $VO_2$ was grown using the vapor transport method. Vanadium dioxide has a different morphology with the same growth conditions for different substrates. The 1D nanowires $VO_2$ were grown on a Si substrate ($Si{\setminus}SiO_2$(300 nm), whereas the 2D & 3D nanostructured $VO_2$ were grown on an exfoliated graphene nanosheet. The crystallographic properties of the 1D or 2D & 3D nanostructured $VO_2$, which were grown by thermal CVD, and exfoliated-transferred graphene nanosheets on a Si wafer which was used as substrate for the vanadium oxide nanostructures, were analyzed by Raman spectroscopy. The as-grown vanadium oxide nanostructures have a $VO_2$ phase, which are confirmed by Raman spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.309-309
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• 2012

Heteroepitaxial growth remains as one of the continuously growing interests, because the heterogeneous crystallization on different substrates is a common feature in the fabrication processes of many semiconductor materials and devices, such as molecular beam epitaxy, pulsed laser deposition, sputtering, chemical bath deposition, chemical vapor deposition, hydrothermal synthesis, vapor phase transport and so on [1,2]. By using the R.F. sputtering system, ZnO thin films were deposited on graphene 4 and 6 mono layers, which is grown on 400 nm and 600 nm $SiO_2$ substrates, respectively. The ZnO thin layer was deposited at various temperatures by using a ZnO target. In this experimental, the working power and pressure were $3{\times}10^{-3}$ Torr and 50 W, respectively. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen and argon gas flows were controlled around 5 and 10 sccm by using a mass flow controller system, respectively. The structural properties of the samples were analyzed by XRD measurement. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system. The surface morphologies were observed using field emission scanning electron microscope (FE-SEM).

• The KSFM Journal of Fluid Machinery
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• v.18 no.1
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• pp.65-71
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• 2015

The purpose of this study is to investigate cavitating flow of the multistage centrifugal pump. Cavitation is observed in the impeller leading edge and trailing edge of the suction area. Head coefficients are measured under different flow operating conditions. The Rayleigh-Plesset cavitation model is adapted to predict the occurrence of cavitation in the pump. The two-phase gas-liquid homogeneous CFD method is used to analyze the centrifugal pump performances with two equation transport turbulence model. The simulations are carried out with three different flow coefficients such as 0.103, 0.128 and 0.154. The occurrence of cavitation described according to water vapor volume fraction. The head versus NPSH (Net Positive Suction Head) also measured using different flow coefficients. Development of cavitation in the centrifugal pump impellerI is discussed. It is showed that the simulation represents the head drop about 3%.

• Journal of the Korean Society for Marine Environment & Energy
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• v.19 no.1
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• pp.52-61
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• 2016

To inject huge amount of $CO_2$ for CCS application, high pressure pipeline transport is accompanied. Rapid depressurization of $CO_2$ pipeline is required in case of transient processes such as accident and maintenance. In this study, numerical analysis on the depressurization of high pressure $CO_2$ pipeline was carried out. The prediction capability of the numerical model was evaluated by comparing the benchmark experiments. The numerical models well predicted the liquid-vapor two-phase depressurization. On the other hands, there were some limitations in predicting the temperature behavior during the supercritical, liquid phase and gaseous phase expansions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.230-233
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• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.234-237
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• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility,carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.234-237
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• 2001

FeSi$_2$/Si Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.871ev at 300 K. The Hall effect is a physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important Part for it application Various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.230-233
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• 2001

FeSi$_2$ Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.87leV at 300 K. The Hall effect is a Physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E.H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it application various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.1693-1696
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• 2004

Synchrotron X-ray micro-imaging technique was employed to monitor non-invasively the refilling process of water inside the xylem vessels in bamboo leaves. The consecutive phase-contrast X-ray images clearly show both plant anatomy and the transport of water inside the xylem vessels. Traces of water-rise, vapor bubbles and variations of contact angle between the water front and the xylem wall were measured in real time. During the refilling process, air bubbles are removed when the rising water front halts at a vessel end for a while. Subsequently, it starts rising again at a higher velocity than the normal refilling speed. Repeated cavitation seems to deteriorate the refilling ability in xylem vessels. In dark environment, the water refilling process in xylem vessels is facilitated more effectively than in bright illuminated conditions. Finally, X-ray micro-imaging was famed to be a powerful, high resolution, real time imaging tool to investigate the water refilling process in xylem vessels.

• Journal of the Korean Ceramic Society
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• v.20 no.2
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• pp.115-122
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• 1983

There has been many controversies about the effects of additive in sintering of SiC But no prior systematic work has been reported about the difference between the effects of B and $B_4C$ as additive. The sintering behavior of SiC and its strength are studied and the optimum concentrations of additives and sintering conditions for SiC are determined. The effects of B and $B_4C$ have same effects on reactive sintering of SiC except the easiness of transport via vapor phase for uniform distribution in case of B. The strength of sintered SiC without exaggerated grain growth is limited by surface flaws and is nearly independent of temperature up to 140$0^{\circ}C$.