• Korean Journal of Materials Research
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• v.12 no.4
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• pp.304-307
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• 2002

A zinc oxide (ZnO) single crystal was used as a substrate in the hydride vapor-phase epitaxy (HVPE) growth of GaN and the structural and optical properties of GaN layer were characterized by x- ray diffraction, transmission electron microscopy, secondary ion mass spectrometry, and photoluminescence (PL) analysis. Despite a good lattice match and an identical structure, ZnO is not an appropriate substrate for application of HVPE growth of GaN. Thick film could not be grown. The substrate reacted with process gases and Ga, being unstable at high temperatures. The crystallinity of ZnO substrate deteriorated seriously with growth time, and a thin alloy layer formed at the growth interface due to the reaction between ZnO and GaN. The PL from a GaN layer demonstrated the impurity contamination during growth possibly due to the out-diffusion from the substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.512-518
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• 2006

In this paper, we investigated the deposition of pentacene thin film on a large area substrate by Organic Vapor Phase Deposition(OVPD) and applied it to fabrication of Organic Thin Film Transistor(OTFT). We extracted the optimum deposition conditions such as evaporation temperature of $260^{\circ}C$, carrier gas flow rate of 10 sccm and chamber vacuum pressure of 0.1 torr. We fabricated 72 OTFTs on the 4 inch size Si Wafer, Which produced the average mobility of $0.1{\pm}0.021cm^2/V{\cdot}s$, average subthreshold slope of 1.04 dec/V, average threshold voltage of -6.55 V, and off-state current is $0.973pA/{\mu}m$. The overall performance of pentacene TFTs over 4 ' wafer exhibited the uniformity with the variation less than 20 %. This proves that OVPD is a suitable methode for the deposition of organic thin film over a large area substrate.

• Journal of the Korean Ceramic Society
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• v.36 no.8
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• pp.853-858
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• 1999

To investigate the effect of H2 flow rate and TMS[Si(CH3)4] concentration on synthesizing ultrafine ${\beta}$-SiC powder by vapor phase reaction the experiment was performed at 1100$^{\circ}C$ of the reaction temperature under the condition of 200-2000 cc/min of H2 gas flow rate and 1-10% of TMS concentration respectively. The shape of ${\beta}$-SiC particles synthesized was spherical and the size of particles decreased and the distribution of particles was more uniform with increasing H2 gas flow rate. In this case Si powders were coexisted with ${\beta}$-SiC Pure and ultrafine ${\beta}$-SiC powders without Si were obtained under the condition of above 2% of TMS concentration and below 1500 cc/min of H2 gas flow rate.

• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.44-49
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• 2000

Silicon nitride powders, were synthesized by the vapor phase reaction using SiH4-NH3 gaseous mixture. The reaction temperature, ratio of NH3 to SiH4 gas and the overall gas quantity were varied. The synthesized powders were characterized using X-ray, TEM, FT-IR and EA. The synthesized silicon nitride powders were in amorphous state, and the average particle size was about 100nm. TEM analysis revealed that the particle size decreased with increasing reaction temperature and gas flow quantity. As-received amorphous powders were annealed in nitrogen atmosphere at 140$0^{\circ}C$ for 2h, then the powders were completely crystallized at 0.2 ratio of NH3 to SiH4.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.625-626
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• 2006

In the present study, the focus is on the synthesis of nanosized WC powder by the chemical vapor condensation proces. The synthesized W-C system powder by the CVC process shows W2C, W, WO3 phases and can not shows WC phase. After recarburization heat treatment under mixture gas atmosphere of argon and hydrogen gases, the synthesized W-C system powder fully transformed to the pure WC. The synthesized WC powder after recarburization heat treatment has an average particle size of 20 nm. The nano-sized WC powder can be prepared by the combination of the CVC process and heat treatment methods.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.265.2-265.2
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• 2013

We fabricate poly(3,4-ethylenedioxythiopene patterns using liquid-bridge-mediated nanotransfer (LB-nTM) printing via vapor phase polymerization (VPP). LB-nTM printing method can simultaneously enable the synthesis, alignment and patterning of the nanowires from molecular ink solutions. Two- or three-dimensional complex structures of VPP-PEDOT were directly fabricated over a large area using many types of molecular inks. VPP method is a versatile technique that can be used to obtain highly conducting coatings of conjugated polymer on both conducting and non-conducting substrates. The PEDOT patterns has analyzed crystallinity from X-ray diffraction pattern and select-area diffraction patterns. In addition, the PEDOT pattern has high conductivity compared other conducting polymers.

• Journal of the Korean Institute of Gas
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• v.14 no.2
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• pp.22-26
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• 2010

In this study, experimental vapor pressures and densities of vapor and liquid phases versus temperature were estimated using PC-SAFT equation. The estimated results were compared with those using PR equation of state. For the vapor phase densities, both equations well predicted the literature data. However, PC-SAFT equation showed better prediction capability for liquid phase densities. In the comparison of vapor-liquid equilibrium prediction capability for the binary systems of methane and ethane, PC-SAFT equation was better than the PR equation.

• Transactions of the Korean hydrogen and new energy society
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• v.8 no.4
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• pp.155-160
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• 1997

Generation of hydrogen and oxygen gas from water is mostly accomplished by electrolysis. In this report, a scheme is presented regarding the gas generation based on plasmolysis. Unlike electrolysis water dissociation by electrical discharge (plasmolysis) requires a high voltage to cause either electron emission or electron capture, and subsequent ionization of involved molecular species. When electrical discharge is initiated between electrodes separated by water-vapor interface, a very large electric field(~100kV/cm) is developed at the tip of the electrode placed in the vapor phase. It is found that the efficiency of plasmolysis depends on the polarity of the electrode placed in the vapor phase. Also presented is the scheme of hydrogen and oxygen generation by such electrical discharge.

• Journal of ILASS-Korea
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• v.5 no.4
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• pp.57-65
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• 2000

For this research an extension of the LIF technique that the LIEF(Laser Induced Exciplex Fluorescence) technique has been used LIEF technique is the unique method to allows the visualization of fuel vapor phase and liquid phase individually by capturing each signals of them. In this work performed that the basic procedure for advanced LIEF technique using TEA and benzene as dopants md high power KrF excimer laser to excite the dopants. Iso-octane is used as the fuel because it does not absorb light at the laser wavelength. The boiling point of benzene and TEA are $81^{\circ}C\;and89^{\circ}C$, respectively, in comparison to $99^{\circ}C$ for iso-octane. It is observed that the behavior and distribution of high pressed fuel injection from various test condition. The injection pressure is set as 3MPa. and 5MPa. And the ambient pressure of test chamber is atmospheric pressure and 1MPa, the ambient temperature of chamber is room temperature, $300^{\circ}C\;and\;500^{\circ}C$ to imitate the condition of GDI engine cylinder.

• Nuclear Engineering and Technology
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• v.54 no.12
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• pp.4798-4808
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• 2022

The porous corrosion deposits (known as CRUD) adhered to the cladding have an important effect on the heat transfer from fuel rods to coolant in PWRs. The vapor film is the main constituent in the two-phase film boiling model. This paper presents a vapor film thickness correlation, associated with CRUD porosity, CRUD chimney density, CRUD particle size, CRUD thickness and heat flux. The dependences of the vapor film thickness on the various influential factors can be intuitively reflected from this vapor film thickness correlation. The temperature, pressure, and boric acid concentration distributions in CRUD can be well predicted using the two-phase film boiling model coupled with the vapor film thickness correlation. It suggests that the vapor thickness correlation can estimate the vapor film thickness more conveniently than the previously reported vapor thickness calculation methods.