• Title/Summary/Keyword: Vapor flow

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Predictions of zinc selenide single crystal growth rate for the micro gravity experiments

  • Kim, Geug-Tae
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.14 no.5
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    • pp.226-232
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    • 2004
  • One predicts the crystal growth rate of ZnSe with a low vapor pressure system in a horizontal configuration based on one dimensional advection-diffusion and two-dimensional diffusion-convection model. The present results show that for the ratios of partial pressures, s = 0.2 and 2.9, the growth rate increases with the temperature differences between the source and crystal. As the ratio of partial pressure approaches the stoichiometric value, s = 2 from s = 1.5 (zinc-deficient case: s < 2) and 2.9 (zinc-rich case: s > 2), the rate increases sharply. For the ranges from 1.5 to 1.999 (zinc-deficient case: s < 2) and from s = 9 to 2.9 (zinc-rich case: s > 2), the rate are slightly varied. From the viewpoint of the order of magnitude, the one-dimensional model for low vapor pressure system falls within the 2D predictions, which indicates the flow fields would be advective-diffusive. For the effects of gravitational accelerations on the rate, the gravitational constants are varied from 1 g to $10^{-6}$ g for $\Delta$T = 50 K and s = 1.5, the rates remain nearly constant, i.e., 211 mg/hr, which indicates Stefan flow is dominant over convection.

Non-absorbable Gas Effects on Heat and Mass Transfer in Falling Film Absorption

  • Kim, Byongjoo;Lee, Chunkyu
    • Journal of Mechanical Science and Technology
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    • v.17 no.4
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    • pp.581-589
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    • 2003
  • Film absorption involves simultaneous heat and mass transfer in the gas-liquid system. While the non-absorbable gas does not participate directly In the absorption process. its pretence does affect the overall heat and mass transfer. An experimental study was performed to investigate the heat and mass transfer characteristics of LiBr-H$_2$O solution flow ing over 6-row horizontal tubes with the water vapor absorption in the pretence of non-absorbable gases. The volumetric concentration of non-absorbable gas, air, was varied from 0.17 to 10.0%. The combined effects of the solution flow rate and its concentration on the heat and mass transfer coefficients were also examined. The presence of 2% volumetric concentration of air resulted in a 25% reduction in the Nusselt number and 41% reduction in the Sherwood number Optimum film Reynolds number was found to exist at which the heat and mass transfer reach their maximum value independent of air contents. Reduced Nusselt and Sherwood numbers. defined as the ratio of Nusselt and Sherwood numbers at given non-absorbable gas content to that with pure water vapor, were correlated to account for the reduction in the heat and mass transfer due to non-absorbable gases in a falling film absorption process.

Characteristics of (Ba,Sr)RuO$_3$Bottom Electrodes by Liquid Delivery Metalorganic Chemical Vapor Deposition (액체 운반 유기 금속 화학 기상 증착법에 의한 $(Ba,Sr)RuO_3$ 하부전극의 특성)

  • Choe, Eun-Seok;Yun, Sun-Gil
    • Korean Journal of Materials Research
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    • v.11 no.11
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    • pp.997-1000
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    • 2001
  • Conducting perovskite oxide, $(Ba,Sr)RuO_3(BSR)$, which has many advantages for $(Ba,Sr)TiO_3(BST)$ due to their similarity in crystal structure, lattice constant and chemical composition, was prepared on n-type Si (100) by liquid delivery metalorganic chemical vapor deposition(LDMOCVD). The deposition characteristics of BSR were controlled by gas-phase mass-transfer in the experiment. The BSR films deposited at 50$0^{\circ}C$ and oxygen flow rate of 100 sccm(standard cc/min) showed an average roughness of 22 $\AA$and resistivity of 810 $\mu$$\Omega$-cm. The roughness of BSR films with oxygen flow rate showed a close relationship with the resistivity of films. BSR (110) peak shifted toward lower Bragg angle with increase of x in the$(Ba_x,Sr_{1-x})TiO_3$. The resistivity of BSR films increased from 810 to 924 $\mu$$\Omega$-cm with increase of Ba content(x).

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Numerical Analysis of Switching Arcs with the Ablation of PTFE Nozzles (PTFE 노즐로부터 발생하는 용삭가스를 고려한 스위칭 아크 해석)

  • Lee, Won-Ho;Kim, Hong-Kyu;Lee, Jong-Chul
    • Proceedings of the KIEE Conference
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    • 2011.07a
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    • pp.1536-1537
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    • 2011
  • The high-voltage circuit breaker plays an important role in the electrical system because there has been a need for suitable switching devices capable of initiating and interrupting the flow of the electric fault current. It continues as the contacts recede from each other and as the newly created gap is bridged by a plasma. The arc plasma happens inside the insulation nozzle of SF6 self-blast interrupter which is newly developed as the next-generation switching principle. The ablation of PTFE nozzle is caused by this high temperature medium, the PTFE vapor from the nozzle surfaces flows toward the outlets and the pressure chamber. The vapor makes the pressure of the chamber increased by heat and mass transfer from the arcing zone. Because the rate of ablation depends on the magnitude of applied current, it decreases when the current goes to zero. The compressed gas inside the chamber flows reversely toward the arc plasma during this moment. According to this principle, the arc can be cooled down and the fault current can be interrupted successfully. In this study, we calculate arc plasmas and thermal-flow characteristics caused by fault current interruption inside a SF6 self-blast interrupter, and to investigate the effect of PTFE ablation on the whole arcing history.

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A Study of Flow Characteristics in Pressure Independent Control Valve for Hydronic System (냉난방수배관시스템용 차압독립형 유량제어밸브의 유동특성 연구)

  • Min, Joon-Ki;Won, Bo-Young;Jeong, Shin-Kyu
    • Journal of the Korean Society for Geothermal and Hydrothermal Energy
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    • v.13 no.3
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    • pp.9-15
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    • 2017
  • In this study, set values of PICV(Pressure Independent Control Valve) were simulated according to the pressure distribution and velocity. The higher the set value and the open rate, as the lower the pressure in the neck. On the contrary, the lower the set value and open rate, as the higher the pressure in the neck. When the set value was small, the pressure was distributed sufficiently and confirmed that the pressure was generated by the VOF, confirming that it could generate a vapor pressure. When the set value 100 %, the lower corn open rate of the differential pressure was 46 % to 29 %, set value 100 % was 29 % to 19 %, and set value 6 % was 12 % to 6 % for the lower corn open rate percentile, it was limited to within 50 %. Thus, the results of this study on the correlation between open rate and differential pressure of the set value of the PICV will be beneficial to improve performance of flow control valves and contribute to their efficient operation used for a hydronic system.

Residence Time Effect on the Growth of ZrC by Low Pressure Chemical Vapor Deposition (저압화학기상증착법을 이용한 ZrC 성장에 잔류시간이 미치는 영향)

  • Park, Jong-Hoon;Jung, Choong-Hwan;Kim, Do-Jin;Park, Ji-Yeon
    • Journal of the Korean Ceramic Society
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    • v.45 no.5
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    • pp.280-284
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    • 2008
  • In order to investigate residence time effect on the growth of ZrC film, the ZrC films grew with various system total pressure (P) and total flow rate (Q) by low pressure chemical vapor deposition because residence time is function of system total pressure and total flow rate. Thermodynamic calculations predict that the decomposition of source gases ($ZrCl_4$ and $CH_4$) would be low as increasing the residence time. Thermodynamic calculations results were proved by investigating deposition rate with various residence time. Deposition rate decreased with residence time of source gas increased. Besides, depletion effect accelerated diminution of deposition rate at high residence time. On the other hands, the deposition rated was increased as decreasing the residence time because fast moving of intermediate gas species decrease the depletion effect. The crystal structure was not changed with residence time. However, the largest size of faceted grain showed up to specific residence time and the size of grain was decreased whether residence time increase or not.

Numerical Study on CVI Process for SiC-Matrix Composite Formation (SiC 복합체 제조를 위한 화학기상침착공정에 대한 수치해석 연구)

  • Bae, Sung Woo;Im, Dongwon;Im, Ik-Tae
    • Journal of the Semiconductor & Display Technology
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    • v.14 no.2
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    • pp.61-65
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    • 2015
  • SiC composite materials are usually used to very high temperature condition such as thermal protection system materials at space vehicles, combustion chambers or engine nozzles because they have high specific strength and good thermal properties at high temperature. One of the most widely used fabrication methods of SiC composites is the chemical vapor infiltration (CVI) process. During the process, chemical gases including Si are introduced into porous preform which is made by carbon fibers for infiltration. Since the processes take a very long time, it is important to reduce the process time in designing the reactors and processes. In this study, both the gas flow and heat transfer in the reactors during the processes are analyzed using a computational fluid dynamics method in order to design reactors and processes for uniform, high quality SiC composites. Effects of flow rate and heater temperature as process parameters to the infiltration process were examined.

Preparation of Hydrophobic Porous PVDF Membrane and Application for Membrane Distillation (소수성 다공질 PVDF 중공사 분리막 제조 및 막증류 적용)

  • Min, Ji Hee;Park, Min Soo;Kim, Jinho
    • Membrane Journal
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    • v.24 no.3
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    • pp.240-248
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    • 2014
  • Porous PVDF hollow fiber membranes were prepared by hybrid process of TIPS(thermally induced phase separation) and stretching for membrane distillation. The tests were conducted to investigate that permeability of the membrane could be enhanced by reducing membrane wall thickness. During fiber spinning, dope discharge rate from nozzle was reduced and flow rate of bore fluid increased to make the wall thickness thinner. As dope discharge rate from nozzle was reduced and flow rate of bore fluid increased, the membrane wall thickness was reduced. As a result, air permeability, water permeability and vapor permeability of the membranes increased.

The study of SiON thin film for optical properties. (SiON 박막의 광학적 특성에 대한 연구)

  • Kim, D.H.;Im, K.J.;Kim, K.H.;Kim, H.S.;Sung, M.Y.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.247-250
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    • 2001
  • We studied optical properties of SiON thin-film in the applications of optical waveguide. SiON thin-film was grown in $300^{\circ}C$ by PECVD(plasma enhanced chemical vapor deposition) system. The change of SiON thin-film composition and refractive Index was studied as a function of varying $NH_3$ gas flow rate. As $NH_3$ gas flow rate was increased, Quantity of N and refractive index were increased at the same time. By the results, we could form the SiON thin-film to use of a waveguide with refractive index of 1.6. We analyzed the conditions of the thin-film with FTIR(fourier transform infrared) and OES (optical emission spectroscopy). N-H bonding($3390cm^{-1}$ ) can be removed by thermal annealing. And we could observe the SiH bonding state and quantity by OES analysis in $SiH_4$

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An Experimental Investigation of Thermodynamic Performance of R-22 Alternative Blends

  • Kim, Chang-Nyeon;Park, Young-Moo
    • International Journal of Air-Conditioning and Refrigeration
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    • v.6
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    • pp.36-44
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    • 1998
  • R-410a and R-407c which have the best potential among R-22 alternatives were tested as drop-in refrigerants against a set of R-22 baseline tests. The performance evaluations were carried out in a psychometric calorimeter test facility using the residential spilt type air conditioner under the ARI rating conditions. Except the lubricant and hand-operated expansion valve, the other parts of the air conditioner were the same with the commercial system. Performance characteristics were measured; compressor power, capacity, VCR, mass flow rate and COP. The tests showed that R-407c can be directly charged into the current refrigeration system because its vapor pressure and other thermochemical properties are similar to those of R-22. However, it is required to change the volume flow rate of compressor in order to achieve the volumetric capacity of R-22. This results from its relatively small VCR and capacity. Meanwhile, R-410a has vapor pressure values too high to be substituted for the current system and this resulted relatively low COP of R-410a compared to that of R-22.

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