• Electrical & Electronic Materials
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• v.9 no.8
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• pp.776-782
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• 1996

The electrical properties of vapor deposition polymerized polymide thin films for getting an in-line system with manufacturing process of semiconductor device, have been studied. Polyimide thin films fabricated by vapor deposition polymerization(VDP) method based on PMDA and 4,4'-DDE monomer were confirmed by FT-IR spectra. It is found that the major conduction carriers of thin films are ions, and the hopping length of ions is almost same with monomer length at the temperature over 120.deg. C through the analysis of electrical conduction mechanism. Also, The activation energy is about 0.69 eV at the temperature of >$30^{\circ}C$ - >$150^{\circ}C$ and it is shown that the resistivity at which thin films can be used as an insulating film between layers of semiconductor device, is 3.2*10$^{15}$ .ohm.cm.

• Bulletin of the Korean Chemical Society
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• v.27 no.10
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• pp.1633-1637
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• 2006

We demonstrate a selective vapor-phase deposition of conductive poly(3,4-ethylenedioxythiophene) (PEDOT) thin films on patterned $FeCl_3$. The PEDOT thin films were grown on various substrates by using the vapor-phase polymerization of ethylenedioxythiophene (EDOT) with $FeCl_3$ catalytic layers at 325 K. The selective deposition of the PEDOT thin films using vapor-phase polymerization was accomplished with patterned $FeCl_3$ layers as templates. Microcontact printing was done to prepare patterned $FeCl_3$ on polyethyleneterephthalate (PET) substrates. The selective vapor-phase deposition is based on the fact that the PEDOT thin films are selectively deposited only on the regions exposing $FeCl_3$ of the PET substrates, because the EDOT monomer can be polymerized only in the presence of oxidants, such as $FeCl_3$, Fe($CIO_4$), and iron(II) salts of organic acids/inorganic acids containing organic radicals.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.185-190
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• 2003

In this paper, it was demonstrated that the organic thin film transistors were fabricated by the organic gate insulators with vapor deposition polymerization (VDP) processing. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA) and ODA, and cured at $150^{\circ}C$ for 1hr. Electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure obtained to the saturated slop in the saturation region and the subthreshold non-linearity in the triode region. Field effect mobility, threshold voltage, and on-off current ratio in $0.45\;{\mu}m$ thick gate dielectric layer were about $0.17\;cm^2/Vs$, -7 V, and $10^6\;A/A$, respectively. Details on the explanation of compared to organic thin-film transistors (OTFTS) electrical characteristics of ODPA-ODA and 6FDA-ODA as gate insulators by fabricated thermal co-deposition method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.190-193
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• 2002

The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.1
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• pp.139-141
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• 2007

Thin films of polyimide (Pl) were fabricated by a vapor deposition polymerization method (VDPM) and studied for the photosensitive characteristic. Polyamic acid (PAA) thin films fabricated by vapor deposition polymerization (VDP) from 6FDA and 4-4' DDE were converted to PI thin films by thermal curing. From AFM and Ellipsometer experimental, the films thickness was decreased and the reflectance was increased as the curing temperature was increased. Those results implies that thin film is uniform. From UV-Vis spectra, PI thin films showed high absorbance in 225 $\sim$ 260 [nm] region.

• Bulletin of the Korean Chemical Society
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• v.27 no.2
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• pp.169-184
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• 2006

A review is made on the chemical vapor deposition polymerization (CVDP) of insoluble and infusible poly(arylenevinylene)s and its applications to nanoscience. Poly(p-phenylenevinylene) (PPV), poly(naphthylenevinylene)s, poly(2,5-thinenylenevinylene) (PTV), and other homologous polymers containing oligothiophenes could be prepared by the CVDP method in the form of films, tubes, and fibers of nano dimensions. They would be readily converted to graphitic carbons of different structures by thermal treatment. Field emission FE) of carbonized PPV nanotubes, photoconductivity of carbonized PPV/PPV bilayer nanotubes and nanofilms also were studied.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.3
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• pp.380-385
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• 1996

Thin films of polyamic acid(PAA) were fabricated by vapor deposition polymerization(VDP) from pyromellitic dianhydride(PMDA) and 4,4'-diamino diphenyl ether(DDE). Thin films of polyimide(PI) were obtained by curing PAA, and their dielectric properties have been measured. The uniform thin films of PI formed by curing PAA at 300 .deg. C for 1 hr. which was confirmed by Fourier transform Infrared spectroscopy(FT-IR) absorption at 720, 1380, 1780c $m_{-1}$. Relative permittivity and tan .delta. were 3.9 and 0.008 at 10kHz, respectively. (author). 8 refs., 11 figs., 1 tab.1 tab.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.114-115
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• 2007

In this paper, it was demonstrated that organic thin-film transistors (OTFTs) were fabricated with the organic passivation layer by vapor deposition polymerization (VDP) processing, In order to form polymeric film as an passivation layer, VDP process was also introduced instead of spin-coating process, where polymeric film was co-deposited by high-vacuum thermal evaporation from 6FDA and ODA followed by curing, Field effect mobility, threshold voltage, and on-off current ratio with 450-nm-thick organic passivation layer were about $0.21\;cm^2/Vs$, IV, and $1\;{\times}\;10^5$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.139-142
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• 1995

Polyimide(PI) thin films are fabricated by vapor deposition polymerization(VDP) from PMDA and DDE. The IR spectrum show that PAA the films are changed into PI films by curing. The activation energy of PI films is estimated to be 0.32 [eV] at the electric field of 0.133 [Mv/cm]. The resistivity is about 4.5${\times}$10$\_$16/ [$\Omega$$.$cm] at room temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.340-346
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• 1998

In this study, we intended to investigate aging effect of polyimide prepared by VDPD(vapor deposition polymerized method). The prepared polymide was treated by the oxygen and argon gas plasma. And we evaluated the polyimide treated by plasma from contact angle, surface leakage current, FT-IR and SEM. We know that the structure of polyimide at surface are changed to amide structure by plasma treating. It seems that strong energy of plasma causes breaking the molecular chin of the polyimide. And surface roughness increases with plasma treating time increased and sequentially the wettability and leakage current increases.