• Current Photovoltaic Research
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• v.1 no.1
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• pp.27-32
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• 2013

We investigated the growth mechanism of amorphous-phase Si thin films in order to improve the film characteristics and circumvent photo-degradation effects by implementation of hot-wire chemical vapor deposition. Amorphous silicon thin films grown in a silane/hydrogen mixture can be decomposed by a resistive heat filament. The structural properties were observed by Raman spectroscopy, FTIR, SEM, and TEM. The electrical properties of the films were measured by photo-conductivity, dark-conductivity, and photo-sensitivity. The contents of Si-H and $Si-H_n$ bonds were measured to be 19.79 and 9.96% respectively, at a hydrogen flow rate of 5.5 sccm, respectively. The thin film has photo-sensitivity of $2.2{\times}10^5$ without a crystalline volume fraction. The catalyst behavior of the hot-wire to decompose the chemical precursors by an electron tunneling effect depends strongly on the hydrogen mixture rate and an amorphous Si thin film is formed from atomic relaxation.

• The Magazine of the Society of Air-Conditioning and Refrigerating Engineers of Korea
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• v.16 no.4
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• pp.406-414
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• 1987

As one of the explosion suppression methods of LPG tank exposed to hot environment by an accident or fire, some material which has large heat capacity and thermal conductivity can be installed inside the LPG tank in order to suppress the temperature increasement of tank wall. In the present study, theoretical model for the horizontally locating cylindrical LPG tank with and without the aluminum explosion suppression material has been developed to predict the characteristics of system. As a parametric study, effects of two major parameters, thickness of material filling and initial vapor volume fraction, on the time variation of wall temperature, temperature and pressure in tank are numerically examined. The results of present study show that the thickness of material filling does not give big differences in the suppression characteristics when the thickness of filling is larger than three inches. In case of material filling, there are marked suppression effects to the increase-ment of wall temperature, average vapor temperature and pressure in tank compared with the case of no filling.

• Nuclear Engineering and Technology
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• v.56 no.2
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• pp.624-635
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• 2024

In two-fluid simulations of flow boiling, the modeling of the mean bubble diameter is a key parameter in the closure relations governing the intefacial transfer of mass, momentum, and energy. Monodispersed approach proved to be insufficient to describe the significant variation in bubble size during flow boiling in a heated pipe. A population balance model (PBM) has been employed to address these shortcomings. During nucleate boiling, vapor bubbles of a certain size are formed on the heated wall, detach and migrate into the bulk flow. These bubbles then grow, shrink or disintegrate by evaporation, condensation, breakage and aggregation. In this study, a parametric analysis of the PBM aggregation and breakage models has been performed to investigate their effect on the radial distribution of the mean bubble diameter and vapor volume fraction. The simulation results are compared with the DEBORA experiments (Garnier et al., 2001). In addition, the influence of PBM parameters on the local distribution of individual bubble size groups was also studied. The results have shown that the modeling of aggregation process has the largest influence on the results and is mainly dictated by the collisions due to flow turbulence.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.22 no.10
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• pp.710-718
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• 2010

A numerical study was performed to predict refrigerant charge amount in a mini-channel condenser for a R410A residential air-conditioning system. Multi-channel flat tubes with 12 mini-channels of 1.17 mm average hydraulic diameter for each tube were applied to the condenser. The condenser consisted of 3 passes, and the first, second, and third pass had 44, 19, and 11 tubes, respectively. Each pass was connected by a vertical header. In this study, the condenser was divided into 410 finite volumes, and analyzed by an $\varepsilon$-NTU method. With thermophysical properties and void fraction models for each volume element, the R410A amount distribution and a total charge amount in the condenser were calculated. The predicted total charge amount was compared with the experimentally measured charge amount under a standard ARI A condition. The developed model could predict the charge amount in the mini-channel condenser within prediction errors from -23.9% to -3.0%. Air velocity distribution at the condenser face was considered as non-uniform and uniform by the simulation model, and its results showed that the air velocity distribution could significantly influence the charge amount and vapor phase distribution in the condenser.

• Applied Chemistry for Engineering
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• v.7 no.1
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• pp.67-74
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• 1996

The binary phase equilibrium experiments of carbon dioxide/1,2,3,4 ${\alpha}$-tetrahydro-1-naphthol(${\alpha}$-tetralol) system were conducted to get phase equilibrium and mixture density data at 313.2K, 343.2K and 373.2K and within pressure ranges of 6.0 MPa to 35.0MPa. The phase equilibrium apparatus was type that circulated the vapor and liquid phase, the expended volume measuring system was adopted to microsampling technique for the analysis. The phase equilibrium and mixture density data were obtained for carbon dioxide/${\alpha}$-tetralol system from liquid and vapor phase. The mole fraction of carbon dioxide in liquid phase decreases and the mole fraction of ${\alpha}$-tetralol in vapor phase increases at constant pressure according to increment of temperature, and both the densities of the vapor and liquid phase approach to the mixture critical density as the pressure increases at any temperature. For she thermodynamic analysis, the experimental data were correlated with Peng-Robinson equation in cubic equation of state and compared to theoretical values of carbon dioxide/${\alpha}$-tetralol system. The AAD result was in the range of 1.08%~8.93% in the case of K(1), and was in the range of 45.71%~72.34% in the case of K(2).

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.3429-3434
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• 2007

An experimental study was carried out to investigate gasification process of wood sawdust in the I-dimensional downdraft fixed bed gasifier. The preheated air was used oxidizer and steam were used as a gasifying agent. The operating parameters, the supplied air temperature and steam were used. The oxidizer temperature was varied from 500K to 620K and vapor was added. The gasification process was monitored by measuring temperature at three position near the biomass using R-type thermocouples and the syngas composition was analyzed by gas chromatograph. The change of hydrogen and carbon monoxide, carbon dioxide, methane was observed. Overall, the volume fraction of hydrogen and methane were increased widely as increasing the oxidizer temperature and adding steam.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.49-54
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• 1998

The growth of diamond films in plasma enhanced chemical vapor deposition(PECVD) processes requires high substrate temperatures and gas pressures, as well as high-power excitation of the gas source. Thus determining the substrate temperature in this severe environment is a challenge. The issue is a critical one since substrate temperature is a key parameter for understanding and optimizing diamond film growth. The precise Si substrate temperature calibration based on rapid-scanning spectroscopic ellipsometry have been developed and utilized. Using the true temperature of the top 200 ${\AA}$ of the Si substrate under diamond growth conditions, real time spectroellipsometry (RTSE) has been performed during the nucleation and growth of nanocrystallind thin films prepared by PECVD. RTSE shows that a significant volume fraction of nondiamond(or{{{{ {sp }^{2 } -bonded}}}}) carbon forms during thin film coalescence and is trapped near the substrate interface between ∼300 ${\AA}$ diamond nuclei.

• Nuclear Engineering and Technology
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• v.38 no.2
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• pp.119-128
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• 2006

We start to develop a predictable technology for thermal-hydraulic performance of the RMWR core using an advanced numerical simulation technology. As a part of this technology development, we are developing the advanced interface tracking method to improve the conservation of volume of fluid. The present paper describes a part of the development of the twophase flow simulation code TPFIT with the advanced interface tracking method. The numerical results applied to large-scale water-vapor two-phase flow in tight lattice rod bundles are shown and compared with experimental results. In the results of numerical simulation, a tendency of the predicted void fraction distribution in horizontal plane agreed with the measured values obtained by the advanced neutron radiography technique including the bridge formation of the liquid at the position of adjacent fuel rods where an interval is the narrowest.

• Journal of the Korean institute of surface engineering
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• v.44 no.2
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• pp.39-43
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• 2011

Amorphous silicon thin film was deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD). Each films were prepared in different dilution in the chamber gas. As a result, silicon crystallites and crystal volume fraction was increased with raising the hydrogen dilution in the gas and optical band gap was decreased. Increasement of the hydrogen contents in the chamber affected on surface roughness. In this study, thickness and surface roughness of the a-Si thin film by different hydrogen dilution was investigated by various techniques.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1568-1570
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• 2009

Nanocrystalline silicon thin films were deposited using an internal-type inductively coupled plasma-chemical vapor deposition at room temperature by varying the bias power to the substrate and the structural characteristics of the deposited thin film were investigated. The result showed that the crystalline volume fraction was decreased with the increase of bias power. At the low bias power range of 0~60 W, the compress stress in the deposited thin film was in the range of -34 ~ -77 Mpa which is generally lower than the residual stress observed for the nanocrystalline silicon thin films deposited by capacitively coupled plasma.