• 한국재료학회지
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• 제19권10호
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• pp.522-526
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• 2009

Graphene has been effectively synthesized on Ni/SiO$_2$/Si substrates with CH$_4$ (1 SCCM) diluted in Ar/H$_2$(10%) (99 SCCM) by using an inductively-coupled plasma-enhanced chemical vapor deposition. Graphene was formed on the entire surface of the 500 nm thick Ni substrate even at 700 $^{\circ}C$, although CH$_4$ and Ar/H$_2$ gas were supplied under plasma of 600 W for 1 second. The Raman spectrum showed typical graphene features with D, G, and 2D peaks at 1356, 1584, and 2710 cm$^{-1}$, respectively. With increase of growth temperature to 900 $^{\circ}C$, the ratios of the D band intensity to the G band intensity and the 2D band intensity to the G band intensity were increased and decreased, respectively. The results were strongly correlated to a rougher and coarser Ni surface due to the enhanced recrystallization process at higher temperatures. In contrast, highquality graphene was synthesized at 1000 $^{\circ}C$ on smooth and large Ni grains, which were formed by decreasing Ni deposition thickness to 300 nm.

• E2M - 전기 전자와 첨단 소재
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• 제10권3호
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• pp.217-225
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• 1997

In this study, the PVDF organic thin film was fabricated by the physical vapor deposition method to be dry-process. The distance of heat source and substrate was 5[cm] and the temperature of substrate was 30[.deg. C], when the pressure had reached 2.0 x 10$^{-5}$ [Torr], the temperature of heat source was reached to 285[.deg. C] to heat at 6-8[.deg. C/min] rate, the shutter was opened and deposition was started. TG-DTA(Thermogravimetric-Differential Thermal Analysis) spectrum of PVDF pellets showed that endothermic peak arose at 170[.deg. C] and exothermic peak at 524[.deg. C], but that of thin PVDF film showed that endothermic peak arose at 145[.deg. C] and exothermic peak at 443[.deg C]. The current density was increased linearly with increasing voltage but increased nonlinearly with higher electric field than 250[kV/cm] and activation energy was about 0.667[eV] at the temperature of 30-90[.deg. C].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.71-72
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• 2006

We report on plasma damage free chemical vapor deposition technique for the thin film passivation of organic light emitting diodes (OLEDs), organic thin film transistor (OTFT) and flexible displays using catalyzer enhanced chemical vapor deposition (CECVD). Specially designed CECVD system has a ladder-shaped tungsten catalyzer and movable electrostatic chuck for low temperature deposition process. The top emitting OLED with thin film $SiN_x$ passivation layer shows electrical and optical characteristics comparable to those of the OLED with glass encapsulation. This indicates that the CECVD technique is a promising candidate to grow high-quality thin film passivation layer on OLED, OTFT, and flexible displays.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.277-277
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• 2012

New concept of coating process, which is called Electro Magnetic Levitation-Physical Vapour deposition (EML-PVD) was developed and investigated. Zinc coating was performed and succeeded for the first time on the steel strip (Cold-rolled Steel) in a continuos pilot line using the EML-PVD process which is specialized in the high deposition rate and high vapor yield. EML-PVD will be expected to be the next generation coating technology to be applied to the steel industry.

• 한국진공학회지
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• 제19권6호
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• pp.495-500
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• 2010

원자층 증착법(ALD: atomic layer deposition)을 이용하여 PES (poly (ether sulfon)) 기판위에 증착 온도, 플라즈마 파워에 따라 $Al_2O_3$와 $TiO_2$ 박막을 증착했다. 공정 조건에 따라 $Al_2O_3$와 $TiO_2$ 박막의 밀도, 탄소의 함유량이 달라지는 것을 알 수 있었으며, 공정 조건을 변화시켜 고밀도의 박막을 얻을 수 있었다. 플라즈마에 의한 PES 기판 손상을 막기 위해 buffer layer를 도입했으며, 또한 박막 내부 결함에 의한 수분 투과를 지연 또는 막기 위해 다층 구조를 증착했다. 이를 분석하기 위해 MOCON test를 이용해 투습률을 조사하였다. 플라스틱 기판에 다층 구조의 무기물 보호막을 적용했을 시 플라스틱 기판의 투습률 특성이 개선되었으며, 수분 투과에 대한 activation energy 또한 증가하는 것을 알 수 있었다.

• E2M - 전기 전자와 첨단 소재
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• 제8권2호
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• pp.171-175
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• 1995

Optimum condition of remote plasma enhanced chemical vapor deposition using orthogonal array method was chosen. Characteristics of oxide films deposited by RPECVD with SiH$_{4}$ and N$_{2}$O gases were investigated. Etching rate of the optimized SiO$_{2}$ films in P-etchant was about 6[A/s] that was almost the same as that the high temperature thermal oxide. The films showed high dielectric breakdown field of more than 7[MV/cm] and a resistivity of 8*10$^{13}$ [.ohmcm] around at 7[MV/cm]. The interface trap density of SiO$_{2}$/Si interface around the midgap derived from the high frequency C-V curve was about 5*10$^{10}$ [/cm$^{2}$eV]. It was observed that the dielectric constant of the optimized SiO$_{2}$ film was 4.29.

• 한국진공학회지
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• 제8권3A호
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• pp.194-200
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• 1999

In this paper studied was the piezoelectric properties of the $\beta$-PVDF organic thin films prepared by physical vapour deposition method. The molecular orientation of organic thin films was controlled by the application of an electric field and variation of substrate temperature during the evaporation process. Optimum conditions of manufacturing $\beta$-PVDF organic thin film by physical vapor deposition method is to keep at the substrate temperature of $80^{\circ}C$, at the applied electric field of 142.8 kV/cm. The voltage output coefficient increased from 1.39 to 7.04V increasing the force moment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.54-56
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• 2001

The $SiH_4$ soak step is widely used during the CVD Tungsten(W) plug deposition process on the Ti/TiN barrier metal to prevent the $WF_6$ attack to the underlayer metal. We tried to reduce or skip the time of $SiH_4$ soak process to optimize W-plug deposition process on Via. The electrical characteristics including Via resistance and the structure of W film are affected according to $SiH_4$ soak time. The elimination possibility of $SiH_4$ soak process was confirmed in the case of that the CVD W film grows on the stable Ti/TiN underlayer.

• 한국진공학회지
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• 제20권2호
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• pp.86-92
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• 2011

본 연구에서는 새롭게 개발된 센서인 in-situ particle monitor (ISPM)와 기존센서의 기능을 업그레이드 한 센서인 self-plasma optical emission spectroscopy (SPOES)를 이용해 화학기상증착 진공공정을 진단하였다. 본 연구에서 사용된 증착공정 장비는 silane 가스를 이용한 silicon plasma enhanced chemical vapor deposition과 borophosphosilicate glass 증착장비이다. 두 장비의 증착 또는 클리닝 조건에서의 배출되는 오염입자와 배기가스를 개발된 센서를 이용해 공정상태를 실시간으로 진단하는 것과 개발된 센서의 센싱 능력을 검증하고자 하는 목적으로 연구가 진행되었다. 개발된 센서는 장비 배기구 설치되었으며, 공정압력, 유량, 플라즈마 파워 등의 공정변수 변화에 따른 오염입자 크기 및 분포와 배기 부산물의 변화를 측정하고, 측정 결과의 상호 연관성을 분석하였다.

• 한국표면공학회지
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• 제38권2호
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• pp.60-64
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• 2005

The ICP-CVD (inductively coupled plasma chemical vapor deposition) process was applied to the deposition of $TiB_2$ films. For plasma generation, 13.56 MHz r.f. power was supplied to 2-turn Cu coil placed inside chamber. And the gas mixture of $TiCl_4,\;BCl_3,\;H_2$ and Ar was used for $TiB_2$ deposition. $TiB_2$ films with high hardness (<40 GPa) were obtained at extremely low deposition temperature $(250^{\circ}C)$, and the films hardness increased with ICP power and gas flow ratio of $TiCl_4/BCl_3$. The film structure was changed from (100) preferred orientation to random orientation with increasing RF power. It is supposed that the enhanced hardness of films was caused by a strong Ti-B chemical bonding of stoichiometric $TiB_2$ films and film densification induced by high density plasma.