• 한국결정성장학회지
• /
• 제24권1호
• /
• pp.41-45
• /
• 2014

다양한 공정 조건으로 $SiN_x$와 $SiO_2$ 박막을 형성하고 이에 대한 패시베이션 특성에 대한 연구를 수행하였다. Plasma enhanced chemical vapor deposition(PECVD)을 이용하여 증착된 $SiN_x$ 박막의 경우, 증착 두께가 증가함에 따라 페시베이션 특성이 향상되는 것을 관찰하였다. 이는 PECVD 증착 공정 중 유입되는 수소 원자들이 실리콘 표면에 존재하는 Dangling bond와 결합하여 소수 캐리어의 재결합 현상을 효과적으로 감소시켰기 때문이다. 건식 산화법으로 형성된 $SiO_2$ 박막은 습식 산화법으로 형성된 것 보다 치밀한 계면 구조를 가짐으로 인하여 약 20배 이상 우수한 패시베이션 특성을 나타내었다. 건식 산화 공정 온도가 증가함에 따라 패시베이션 특성이 열화되는 현상이 발생하였고, Capacitance-voltage(C-V) 및 Conductance-voltage(G-V) 분석을 통하여 $SiO_2$/실리콘 계면에 존재하는 계면 결함 밀도 증가에 의해 나타나는 현상임을 알 수 있었다.

• 한국공작기계학회:학술대회논문집
• /
• 한국공작기계학회 2004년도 춘계학술대회 논문집
• /
• pp.482-486
• /
• 2004

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its use in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies, such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. This paper presents that the recent development and our research goals in FIB nano machining technology are given. The emphasis will be on direct milling, or chemical vapor deposition techniques (CVD), and this can distinguish the FIB technology from the contemporary photolithography process and provide a vital alternative to it. After an introduction to the technology and its FIB principles, the recent developments in using milling or deposition techniques for making various high-quality devices and high-precision components at the micro/nano meter scale are examined and discussed. Finally, conclusions are presented to summarize the recent work and to suggest the areas for improving the FIB milling technology and for studying our future research.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1997년도 추계학술대회 논문집
• /
• pp.373-376
• /
• 1997

Diamond thin films were deposited on P-type(100) Si wafers using MPECVD. Prior to deposition, mechanical scretching was done to improve density of nucleation sites with diamond paste of 0.25${\mu}{\textrm}{m}$ size. Diamond films were deposited under the following conditions : methane concentration of 0.5~5%, oxygen concentration of 0~70%, process pressure of 70Torr, process temperature of 900~95$0^{\circ}C$, and deposition time 5hrs. The changes of the morphology and the growth rates of the deposits with the experimental conditions are expriend by Scanning Electron Microscopy. Raman Spectroscopy and X-ray Diffraction method.

• 한국표면공학회지
• /
• 제23권3호
• /
• pp.160-166
• /
• 1990

The effects of the variation of proedd varibles on the flow patterns and effects of the flow patterns on the deposition rate and uniformity in the Si-epitaxy CVD with SiH4 as the source of Si were studied through the calculation by use of control volume method. The reslts showed that the natural convection was undesirable to the uniformity of deposition rate, whose effects were decreased with the dercrese with the decrese of the pressure in the reactoor and with the increase of the flow rate. However. the excessive increase of flow rate caused the movement of the unreacted gas to the substrate. Therefore it resulted in the non-uniform depositions. The rotation of substrate was apperared to improve the uniformity. The resulte of this study could used in CVD process to design the reator and to find the optimum conditions of the process variables.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.461-461
• /
• 2010

For a low dielectric constant inter-metal dielectric application, the low-k SiCOH film with a dielectric constant of 2.8-3.2 has been deposited by plasma-enhanced chemical vapor deposition with decamethylcyclopentasiloxane, cyclohexane, and helium which is carrier gas. In this work, we investigated chemical deposition rate, dielectric constant, characterization of plasma polymer films according to temperature(25C-200C) of substrate and change of component concentration. We measured impedance by using V-I prove during process. From experimental result, deposition rate decrease with increasing temperature. Through real time impedance analysis of chamber, we find corelation between film thickness and impedance by assuming equivalent circuit.

• 한국전산유체공학회:학술대회논문집
• /
• 한국전산유체공학회 2010년 춘계학술대회논문집
• /
• pp.567-570
• /
• 2010

With continuously increasing flat panel display size, uniformity of thin film deposition has been drawing more attentions and associated fabrication methodologies are being actively investigated. Since the convective flow field of mixture gas plays a significant role for deposition characteristics of thin film in an APCVD system, it is greatly important to maintain uniform distribution and consistent concentration of mixture gas species. In this paper, computational study has been performed for the improvement of flow uniformity of mixture gas in an APCVD reactor during thin film deposition process. A diffuser slit has bee designed to spread the locally concentrated gas flow exiting from the flow distributor. A uniform flow distributor has been developed which has less dependency on operating conditions for global flow uniformity

• 대한기계학회논문집B
• /
• 제26권3호
• /
• pp.410-416
• /
• 2002

The fluid flow, heat transfer and the local mass fraction of chemical species in the chemical vapor deposition(CVD) manufacturing process are studied numerically. Flow with a dilute precursor concentration of silane in hydrogen as the carrier gas enters to the reactor and deposits silicon onto the heated surface. The silicon deposition rate using silane is calculated in the horizontal or vertical, axisymmetric reactor. The effects of inlet carrier gas velocity, mass fraction of silane, susceptor angle and rotation of surface on the deposition rate are described.

• 열처리공학회지
• /
• 제6권4호
• /
• pp.223-229
• /
• 1993

Extensive reseach has been performed on the process condition-micro structure-stress relations of TiN film. The various proposed models are mainly base on physical vapor deposition processes. Especially the study on the micro-structure and deposition condition has not been sufficient in TiN deposited by PECVD. In this study, therefore, we discussed the morphological changes of TiN films by PECVD with different temperature and pressure, and compared it with the structure zone model. We could find out that the oxygen and chlorine contents and the texture coefficient increased with deposition temperature, and the morphology of TiN transformed from Zone 1 to Zone T, but deposition pressure didn't remarkly affected.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
• /
• pp.561-564
• /
• 1987

The deposition and reflow properties or BPSG film deposited by APCVD was characterized by variation of each process parameter. As deposition temperature is increased higher, deposition rate is decreased. Maximum deposition rate of BPSG film is obtained in higher 02/Hyride ratio than CVD Oxide or PSG. BPSG film shows stable dielectric properties and we obtained good planarization effect at lower reflow temperature in case of BPSG film than PSG film.

• Progress in Superconductivity
• /
• 제9권2호
• /
• pp.177-182
• /
• 2008

[ $MgB_2$ ] thin films were fabricated using hybrid physical-chemical vapor deposition (HPCVD) method on silicon substrates with buffers of alumina grown by using atomic layer deposition method. The growth war in a range of temperatures $500\;{\sim}\;600^{\circ}C$ and under the reactor pressures of $25\;{\sim}\;50\;Torr$. There are some interfacial reactions in the as-grown films with impurities of mostly $Mg_2Si$, $MgAl_2O_4$, and other phases. The $T_c$'s of $MgB_2$ films were observed to be as high as 39 K, but the transition widths were increased with growth temperatures. The magnetization was measured as a function of temperature down to the temperature of 5 K, but the complete Meissner effect was not observed, which shows that the granular nature of weak links is prevailing. The formation of mostly $Mg_2Si$ impurity in HPCVD process is discussed, considering the diffusion and reaction of Mg vapor with silicon substrates.