• E2M - 전기 전자와 첨단 소재
• /
• 제9권8호
• /
• pp.776-782
• /
• 1996

The electrical properties of vapor deposition polymerized polymide thin films for getting an in-line system with manufacturing process of semiconductor device, have been studied. Polyimide thin films fabricated by vapor deposition polymerization(VDP) method based on PMDA and 4,4'-DDE monomer were confirmed by FT-IR spectra. It is found that the major conduction carriers of thin films are ions, and the hopping length of ions is almost same with monomer length at the temperature over 120.deg. C through the analysis of electrical conduction mechanism. Also, The activation energy is about 0.69 eV at the temperature of >$30^{\circ}C$ - >$150^{\circ}C$ and it is shown that the resistivity at which thin films can be used as an insulating film between layers of semiconductor device, is 3.2*10$^{15}$ .ohm.cm.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
• /
• pp.185-190
• /
• 2003

In this paper, it was demonstrated that the organic thin film transistors were fabricated by the organic gate insulators with vapor deposition polymerization (VDP) processing. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA) and ODA, and cured at $150^{\circ}C$ for 1hr. Electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure obtained to the saturated slop in the saturation region and the subthreshold non-linearity in the triode region. Field effect mobility, threshold voltage, and on-off current ratio in $0.45\;{\mu}m$ thick gate dielectric layer were about $0.17\;cm^2/Vs$, -7 V, and $10^6\;A/A$, respectively. Details on the explanation of compared to organic thin-film transistors (OTFTS) electrical characteristics of ODPA-ODA and 6FDA-ODA as gate insulators by fabricated thermal co-deposition method.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.190-193
• /
• 2002

The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

• 전기학회논문지
• /
• 제56권1호
• /
• pp.139-141
• /
• 2007

Thin films of polyimide (Pl) were fabricated by a vapor deposition polymerization method (VDPM) and studied for the photosensitive characteristic. Polyamic acid (PAA) thin films fabricated by vapor deposition polymerization (VDP) from 6FDA and 4-4' DDE were converted to PI thin films by thermal curing. From AFM and Ellipsometer experimental, the films thickness was decreased and the reflectance was increased as the curing temperature was increased. Those results implies that thin film is uniform. From UV-Vis spectra, PI thin films showed high absorbance in 225 $\sim$ 260 [nm] region.

• Bulletin of the Korean Chemical Society
• /
• 제27권2호
• /
• pp.169-184
• /
• 2006

A review is made on the chemical vapor deposition polymerization (CVDP) of insoluble and infusible poly(arylenevinylene)s and its applications to nanoscience. Poly(p-phenylenevinylene) (PPV), poly(naphthylenevinylene)s, poly(2,5-thinenylenevinylene) (PTV), and other homologous polymers containing oligothiophenes could be prepared by the CVDP method in the form of films, tubes, and fibers of nano dimensions. They would be readily converted to graphitic carbons of different structures by thermal treatment. Field emission FE) of carbonized PPV nanotubes, photoconductivity of carbonized PPV/PPV bilayer nanotubes and nanofilms also were studied.

• 대한전기학회논문지
• /
• 제45권3호
• /
• pp.380-385
• /
• 1996

Thin films of polyamic acid(PAA) were fabricated by vapor deposition polymerization(VDP) from pyromellitic dianhydride(PMDA) and 4,4'-diamino diphenyl ether(DDE). Thin films of polyimide(PI) were obtained by curing PAA, and their dielectric properties have been measured. The uniform thin films of PI formed by curing PAA at 300 .deg. C for 1 hr. which was confirmed by Fourier transform Infrared spectroscopy(FT-IR) absorption at 720, 1380, 1780c $m_{-1}$. Relative permittivity and tan .delta. were 3.9 and 0.008 at 10kHz, respectively. (author). 8 refs., 11 figs., 1 tab.1 tab.

• 한국전기전자재료학회논문지
• /
• 제11권5호
• /
• pp.340-346
• /
• 1998

In this study, we intended to investigate aging effect of polyimide prepared by VDPD(vapor deposition polymerized method). The prepared polymide was treated by the oxygen and argon gas plasma. And we evaluated the polyimide treated by plasma from contact angle, surface leakage current, FT-IR and SEM. We know that the structure of polyimide at surface are changed to amide structure by plasma treating. It seems that strong energy of plasma causes breaking the molecular chin of the polyimide. And surface roughness increases with plasma treating time increased and sequentially the wettability and leakage current increases.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1995년도 추계학술대회 논문집
• /
• pp.139-142
• /
• 1995

Polyimide(PI) thin films are fabricated by vapor deposition polymerization(VDP) from PMDA and DDE. The IR spectrum show that PAA the films are changed into PI films by curing. The activation energy of PI films is estimated to be 0.32 [eV] at the electric field of 0.133 [Mv/cm]. The resistivity is about 4.5${\times}$10$\_$16/ [$\Omega$$.$cm] at room temperature.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1996년도 하계학술대회 논문집 C
• /
• pp.1624-1626
• /
• 1996

PoIyimide thin films fabricated at substrate temperature $20^{\circ}C$, $40^{\circ}C$and $70^{\circ}C$ by vapor deposition polymerization method were confirmed by FT-IR spectra. It is found that deposition rate decreas according as increasing substrate temperature. Defusion depth of evaporation Al at which thin films be used for an insulating films between layers of semiconductor were about $300{\AA}$.

• 한국진공학회지
• /
• 제7권3호
• /
• pp.229-236
• /
• 1998

본 논문에서는 건식중합법에 속하는 진공증착 중합법을 이용하여 내열 절연성 박막 을 제작하고 열경화 온도에 따른 박막의 물성과 전기적 특성에 대해 연구하였다. hexafluoroisopropyliden-2,2-bis[phthalicanhydride](6FDA)와 4,4'-diamino diphenyl ether (DDE) 단량체를 화학량론적으로 최적의 온도인 $214^{\circ}C$, $137^{\circ}C$부분에서 같은 증발율을 보일 때 폴리이미드를 형성하였다. 진공증착 중합된 박막은 열경화에 의해 이미드특성 피이크가 증가되며, 폴리아믹산의 형태에서 폴리이미드 형태로 축중합되어짐을 알 수 있었다. 열경화 온도가 증가함에 따라 박막의 두께는 감소되고 굴절율은 증가된다. 열경화 온도가 $300^{\circ}C$인 경우 최적임을 알았고, 이 온도에서 열경화 시킨 폴리이미드의 전기적 특성에서 100Hz~ 200kHz주파수에서는 3.7의 비유전율을 나타내었고, 유전정접은 0.008의 낮은 값을 보였다. 또한, 30~에서 약1.05$\times$1015$\Omega$cm의 저항율을 보였다.