• Title/Summary/Keyword: Vacuum-annealing

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Humidity Dependence of Electrical Conductivity of Vacuum Evaporated Au Films on Glass (유리표면에 진공증착된 금박막의 전기전도도의 습도 의존성)

  • 이동영;박현수
    • Journal of the Korean Ceramic Society
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    • v.24 no.6
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    • pp.572-578
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    • 1987

  • The vacuum evaporated Au films on soda-lime glasses were measured by the electrical conductivity with the variation of the annealing time, relative humidity, and temperature. Au films structures were observed by scanning Electron Microscope and X-ray Diffractometer. As the annealing time and temperature increased, the electrical conductivity was increased due to the migration or annihilation of defects, but the electrical conductivity was decreased as with the relative humidity increased. Au films by XRD and SEM examination showed the negligible effect of chemical reactions.

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Formation and Growth of Cu Nanocrystallite in Si(100) by ion Implantation

  • Kim, H.K.;Kim, S.H.;Moon, D.W.
    • Journal of the Korean Vacuum Society
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    • v.4 no.S2
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    • pp.115-130
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    • 1995

  • In order to produce Cu nanocrystallite in silicon wafer, the implantation technique was used. The samples of silicon (100) wafers were implanted by $Cu^+$ ions at 100 keV and with varying the doses at room temperature. Post-annealing was performed at $800^{\circ}C$ with Ar environment. To investigate the formation of Cu nanocrystallite with ion doses and growth process by thermal annealing, SIMS and HRTEM(high resolution transmission electron microscopy)spectra were studied.

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Effects of annealing temperature on structural and optical properties of CdS Films prepared by RF magnetron sputtering

  • Hwang, Dong-Hyeon;An, Jeong-Hun;Son, Yeong-Guk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.233-233
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    • 2010

  • CdS thin films were deposited on glass substrates by R.F. magnetron sputtering method and some of the samples were treated by rapid thermal annealing (RTA) process. Effects of thermal annealing on structural and optical properties were investigated at different temperatures ranging from 100 to $600^{\circ}C$. The crystallographic structure of the films and the size of the crystallites in the films were studied by X-ray diffraction. The crystallite sizes were found to increase, and the X-ray diffraction patterns were seen to sharpen by annealing. Optical properties of the films were calculated using the envelope method and the photoluminescence measurements. The optical properties of the films were seen to be dependent on the film thicknesses. The energy gap of the films was found to decrease by annealing. The band edge sharpness of the optical absorption was seen to oscillate by thermal annealing. Annealing over $400^{\circ}C$ was seen to degrade the optical properties of the film. The best annealing temperature for the films was found to be $400^{\circ}C$ from the optical properties. It is observed that the CdS film annealed at $400^{\circ}C$ reveals the strongest UV emission intensity and narrowest full width at half maximum among the temperature ranges studied. The enhanced UV emission from the film annealed at $400^{\circ}C$ is attributed to the improved crystalline quality of CdS thin film due to the effective relaxation of residual compressive stress and achieving maximum grain size. The results show that heat treatments under optimal annealing condition can provide significant improvements in the properties of CdS thin films.

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