• Journal of the Korean Society for Railway
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• v.13 no.5
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• pp.516-520
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• 2010

Parametric study has been conducted to calculate the capacity of vacuum pump system that will be used to maintain the pressure of the tube structure under atmosphere level. Recently many railroad researchers pay attention to the tube train system as one of the super high speed transportation system. To achieve the super high speed, the inside of tube system should be maintained at low pressure level. In the low pressure environment, it is well known that air resistance of train is drastically decreased. Vacuum pump system will be used to make low pressure state for tube structure, exhaust the leakage air and supplement additional vacuum pumping. As results of these studies, we get the lump capacity of vacuum pump for various parameters. These results can be applied to analyze the effects of the reduction of air resistance.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.613-617
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• 2001

The test items like as endurance, air leakage and oil endurance test is requested for reliability evaluation about O-ring which is a kind of core machinery accessories of semi-conduct manufacturing equipment. For verification of these, we design and manufactured a test system for endurance, air leakage and oil endurance of O-ring for semi-conduct manufacturing equipment, and also performed the test for two kinds of O-ring, as it were Viton and Kalretz. The characteristics of this test equipment consist in realization of the test conditions of semi-conduct manufacturing equipment and satisfying the test method. The test conditions are cut gas, vacuum grade, temperature and revolution numbers in the endurance test system, vacuum grade and temperature in the air leakage test system, temperature and time in the oil endurance test system. The separating test results for wearing which is an oil endurance test item, the wearing index of domestic produced Viton O-ring is higher than foreign product by 2%, wearing rate of Kalretz O-ring better than Viton O-ring by 17%, and particles existed in various place. The test result of air leakage which is measured through the RGA sensor used Helium, the vacuum grade was $10^-3$Torr. And the test result of oil endurance, the volume change rate was 7~15%. Hereafter, we intend to analysis the reliability test evaluation and to utilize for domestic manufacturing companies by establishing data base and developing reliability softwares.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.344-345
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• 2012

The Gate-Induced-Drain-Leakage (GIDL) current with channel doping and width dependence are characterized. The GIDL currents are found to increase in MOSFETs with higher channel doping levels and the observed GIDL current is generated by the band-to-band-tunneling (BTBT) of electron through the reverse-biased channel-to-drain p-n junction. A BTBT model is used to fit the measured GIDL currents under different channel-doping levels. Good agreement is obtained between the modeled results and experimental data. The increase of the GIDL current at narrower widths in mainly caused by the stronger gate field at the edge of the shallow trench isolation (STI). As channel width decreases, a larger portion of the GIDL current is generated at the channel-isolation edge. Therefore, the stronger gate field at the channel-isolation edge causes the total unit-width GIDL current to increases for narrow-width devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.39-42
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• 2002

There is a renewed interest in the application of photoconductors especially Cd(Zn)Te to x-ray imaging. In this paper, We investigate effects on x-ray detection characteristic of Zn dopped CdTe detector. Cd(Zn)Te film was fabricated by vacuum thermal evaporation method and then investigate physical analysis using EPMA and XRD. We investigated the leakage current and X-ray photosensitivity as applied voltage about fabricated Cd(Zn)Te film. Experimental results showed that the increase of Zn dopped concentration in $Cd_{1-x}Zn_{x}Te$ detector reduced a leakage current and improved a signal to noise ratio significantly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.845-848
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• 2002

The study of photoconductor materials is demanded for development for flat-panel digital x-ray Imager. In this paper, We investigated the feasibility of application as x-ray image sensor using Cd(Zn)Te compound with high stopping power on high radiation. These Cd(Zn)Te samples were fabricated by vacuum thermal evaporation method to large area deposition and investigated I-V measurement as applied voltage. The experimental results show that the additional injection Zn in CdTe film reduced the leakage current, for the $Cd_{0.85}Zn_{0.15}Te$ detector, the net charge had the highest value as $144.58pC/cm^2$ at 30 V.

• Journal of Chest Surgery
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• v.56 no.5
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• pp.362-366
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• 2023

The stomach has become the most commonly used site for grafts to replace the esophagus in esophageal cancer surgery because of its good blood supply and ability to enable single-reconstruction anastomosis. However, anastomotic failure is a serious complication after esophageal cancer surgery. Unlike anastomotic leakage due to local ischemia, gastric tube necrosis is a life-threatening condition with a high mortality rate. Gastric tube necrosis involves extensive ischemia due to a decreased blood supply, and an urgent operation is mandatory in most cases. Endoscopic vacuum therapy (EVT) has been used for anastomotic leakage after esophageal surgery. In recent years, it has been successfully used for more extensive disease, including large esophageal perforation as an indication for reoperation. Hence, we report a case of extensive gastric tube necrosis treated by EVT after an Ivor Lewis operation.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.775-776
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• 2013

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.147-150
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• 2009

We present a technique for fabricating low leakage organic field-effect transistors by a functional polydimethylsiloxane (PDMS) layer. The technique relies on the photo-chemical process of conversion of the PDMS to a silicon oxide which provides the selective growth of pentacene thin films. The reduced gate leakage current showed ${\sim}10^{-10}$ A in a linear ($V_d=-5\;V$) and saturation ($V_d=-30\;V$) region at $V_g-V_t>0$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.339-339
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• 2012

현재 MOS 소자에 사용되고 있는 $SiO_2$ 산화막은 그 두께가 얇아짐에 따라 Gate Leakage current와 여러 가지 신뢰성 문제가 대두되고 있고, 이를 극복하고자 High-k물질을 사용하여 기존에 발생했던 Gate Leakage current와 신뢰성 문제를 해결하고자 하고 있다. 본 실험에서는 High-k(hafnium) Gate Material에 온도 변화를 주었을 때 여러 가지 전기적인 특성 변화를 보는 방향으로 연구를 진행하였다. 기본적인 P-Type Si기판을 가지고, 그 위에 있는 자연적으로 형성된 산화막을 제거한 후 Hafnium Gate Oxide를 Atomic Layer Deposition (ALD)를 이용하여 증착하고, Aluminium을 전극으로 하는 MOS-Cap 구조를 제작한 후 FGA 공정을 진행하였다. 마지막으로 $300^{\circ}C$, $450^{\circ}C$로 30분정도씩 Annealing을 하여, 온도 조건이 다른 3가지 종류의 샘플을 준비하였다. 3가지 샘플에 대해서 각각 I-V (Gate Leakage Current), C-V (Mobile Charge), Interface State Density를 분석하였다. 그 결과 Annealing 온도가 올라가면 Leakage Current와 Dit(Interface State Density)는 감소하고, Mobile Charge가 증가하는 것을 확인할 수가 있었다. 본 연구는 향후 High-k 물질에 대한 공정 과정에서의 다양한 열처리에 따른 전기적 특성의 변화 대한 정보를 제시하여, 향후 공정 과정의 열처리에 대한 방향을 잡는데 도움이 될 것이라 판단된다.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.224-230
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• 1999

$SrBi_{2x}Ta_2O_9$ (SBT) thin films were prepared on platinized silicon substrates by MOD process, and their ferroelectric and leakage current characteristics were investigated. The grain size of the MOD derived SBT films increased with increasing the BI/Ta mole ration. Although the SBT films with x of 0.8~1.2 were composed of the equiaxed grains, the elongated grains were also observed for the SBT films with x of 1.4 and 1.6. The SBT film with x of 1.2 exhibited the optimum ferroelectric properties of 2PR : 9.79 $\muC/\textrm{cm}^2$ and Ec : 24.2kV/cm at applied voltage of 5V. The leakage current density of the SBT films increased with increasing the BI/Ta mole ratio. With post annealing process, 2Pr and $E_c$of the SBT film with x of 1.2 increases 11.3 $\muC/\textrm{cm}^2$ and 39.6kV/cm, respectively. decrement of the leakage current density by post annealing process increased remarkably with increasing the Bi/ta mole ratio, and the SBT film with x=1.6 exhibited the lowest leakage current density after post annealing process.