• Title/Summary/Keyword: Vacuum injection

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산업부문 B2B 시범사업 소개 - 금형업종 -

  • 류병우
    • Proceedings of the CALSEC Conference
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    • 2001.08a
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    • pp.105-109
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    • 2001
  • 성형의 종류 ◈금속 성형 ㆍ 스탬핑(Stamping) ㆍ 정밀 블랭킹(Fine Blanking) ㆍ 딥 드로잉(Deep Drawing) ㆍ 다이캐스팅(Die Casting) ㆍ 인베스트먼트 주조(Investment Casting) ㆍ 분말 야금(Power Metallurgy) ㆍ 인발(Wire Drawing) ㆍ 압출(Extrusion) ㆍ 단조(Forging) ㆍ ㆍ코이닝(Coining) ㆍ... ◈비금속 성형 ㆍ 사출(Injection) ㆍ 압축(Compression) ㆍ 블로우 성형(Blow Molding) ㆍ 진공 성형(Vacuum Molding) ㆍ 발포 성형(Foam Molding) ㆍ 피복(Encapsulation) ㆍ 회전식(Rotational) ㆍ 주조(Casting) ㆍ 적층(Laminating) ㆍ 압출(Extrusion) ㆍ...(중략)

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Inverted CdSe@ZnS Quantum Dots Light-Emitting Diode using Low-Work Function Polyethylenimine Ethoxylated (PEIE) modified ZnO

  • Kim, Choong Hyo;Kim, Hong Hee;Hwang, Do Kyung;Suh, Kwang S;Park, Cheol Min;Choi, Won Kook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.148-148
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    • 2015
  • Over the past several years, Colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been developed for the future of optoelectronic applications. An inverted-type quantum-dot light-emitting-diode (QDLED), employing low work function organic material polyethylenimine ethoxylated(PEIE) (<10 nm)[1] modified ZnO nanoparticles (NPs) as electron injection and transport layer, was fabricated by all solution processing method, instead of electrode in the device. The PEIE surface modifier incorporated on the top of the ZnO NPs film, facilitates the enhancement of both electorn injection into the CdSe-ZnS QD emissive layer by lowering the workfunction of ZnO from 3.58eV to 2.87eV and charge balance on the QD emitter. In this inverted QDLEDs, blend of poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo) and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] are used as hole transporting layer (HTL) to improve hole transporting property. At the operating voltage of 7.5 V, the QDLED device emitted spectrally orange color lights with high luminance up to 11110 cd/m2, and showed current efficiency of 2.27 cd/A.[2]

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A Case of Intramuscular Abscess in the Sternocleidomastoid Muscle after Intramuscular Stimulation (IMS) (근육내 자극요법 후 목빗근내 농양의 치험례)

  • Kim, Jae-In;Choi, Hwan-Jun;Choi, Chang-Yong;Yang, Hyung-Eun
    • Archives of Plastic Surgery
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    • v.37 no.2
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    • pp.182-186
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    • 2010
  • Purpose: Intramuscular stimulation (IMS) shows good results in the treatment of chronic pain patients who did not respond to other treatments such as oral analgesics, trigger point injection, nerve block and epidural steroid injection. But, IMS procedure especially, patients with diabetes mellitus (DM) has sometimes serious problem. So, we present a very rare case of intramuscular abscess in the sternocleiomastoid muscle after IMS with literature review. Methods: A 66 year old male visited our department 7 days after IMS in the neck. His premorbid conditions and risk factors of deep neck infection was DM and old age. Computed tomographic scans of the head and neck region were performed in this patient: signs of deep neck infection, were seen enhanced abscess in the sternocleidomastoid muscle, cellulitis overlying tissue of the neck, and air bubbles involved muscle. Necrotic wound was excised serially and we treated this with the Vacuum-assisted closure (VAC, Kinetics Concepts International, San Antonio, Texas) system device. After appropriately shaping the sponge in the pockets, continuous negative pressure of 125 mmHg was applied. The VAC therapy was utilized for a period of 12 days. Results: We obtained satisfactory results from wide excision, drainage of the abscess with the VAC system, and then primary closure. The postoperative course was uneventful. Results: We suggest that many of the infectious complications may be preventable by strict adherence to aseptic techniques and that some of the other complications may be minimized by refining the techniques with a clear understanding of the medical disorders of patients. And, the refined technique using the VAC system can provide a means of simple and effective management for the cervical intramuscular abscess, with better cosmetic and functional results.

Effect of Fabrication Methods on Static Strength of Polymer Based Composites under the Low Temperature Range (적층 방법에 따른 복합재의 저온 영역 하에서 정적 강도 변화)

  • Eom, Su-Hyeon;Dutta, Piyush K.;Gwon, Sun-Cheol;Kim, Guk-Jin;Kim, Yun-Hae
    • Proceedings of the KSME Conference
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    • 2003.04a
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    • pp.7-12
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    • 2003
  • When the wind turbine is used in cold regions, the mechanical properties and dimension stability of the blade will be changed. The proposal of this paper is to test the durability of the blade for wind turbine. It is necessary to select the most comfortable materials and fabrication processes for more stable wind turbine blade in cold regions. To select the most comfortable materials and processes, the static strength has to know through the tensile static tests at the severe condition as cold regions. First, the tensile static specimens made by RIM (Resin injection molding) process & vacuum bagging process with reinforcement materials and resin. Tensile static tests were carried out on three laminate lay-ups (carbon prepreg, carbon fiber dry fabric and glass fiber dry fabric) at different test temperature($24^{\circ}$, $-30^{\circ}$), determining properties such as the mechanical strength, stiffness and strain to failure. At different test temperature, in order to test the tensile strengths of these specimens used the low temperature chamber. Next, the results of this test were compared with each other. Finally, the most comfortable materials and fabrication processes can select based on these results. The results show the changes in the static behavior of three laminate lay-ups at different test temperatures. At low temperatures, the static strengths are higher than the ones at room temperature.

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A Comparison of the Effect of Fabrication Methods on Static Strength of Polymer Based Composites under the Low Temperature Range (적층 방법에 따른 고분자 기지 복합재의 저온 영역 하에서 정적 강도 변화의 비교)

  • ;;;Piyush K. Dutta
    • Proceedings of the Korean Society For Composite Materials Conference
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    • 2003.04a
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    • pp.196-201
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    • 2003
  • When the structures are used in cold regions, the mechanical properties and dimension stability of the blade will be changed. The proposal of this study is to test the durability of the structures in cold regions. It is necessary to select the most comfortable materials and fabrication processes for more stable structures in cold regions. To select the most comfortable materials and processes, the static strength has to know through the tensile static tests at the severe condition as cold regions. First, the tensile static specimens made by RIM (Resin injection molding) process & vacuum bagging process with reinforcement materials and resin. Tensile static tests were carried out on three laminate lay-ups (carbon prepreg, carbon fiber dry fabric) at different test temperature($24^{\circ}C$, $-30^{\circ}C$), determining properties such as the mechanical strength, stiffness and strain to failure. At different test temperature, in order to test the tensile strengths of these specimens used the low temperature chamber. Next, the results of this test were compared with each other. Finally, the most comfortable materials and fabrication processes can select based on these results. The results show the changes in the static behavior of three laminate lay-ups at different test temperatures. At low temperatures, the static strengths are higher than the ones at room temperature.

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Design of an Electron Ohmic-Contact to Improve the Balanced Charge Injection in OLEDs

  • Park, Jin-U;Im, Jong-Tae;Yeom, Geun-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.283-283
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    • 2011
  • The n-doping effect by doping metal carbonate into an electron-injecting organic layer can improve the device performance by the balanced carrier injection because an electron ohmic contact between cathode and an electron-transporting layer, for example, a high current density, a high efficiency, a high luminance, and a low power consumption. In the study, first, we investigated an electron-ohmic property of electron-only device, which has a ITO/$Rb_2CO_3$-doped $C_{60}$/Al structure. Second, we examined the I-V-L characteristics of all-ohmic OLEDs, which are glass/ITO/$MoO_x$-doped NPB (25%, 5 nm)/NPB (63 nm)/$Alq_3$ (32 nm)/$Rb_2CO_3$-doped $C_{60}$(y%, 10 nm)/Al. The $MoO_x$doped NPB and $Rb_2CO_3$-doped fullerene layer were used as the hole-ohmic contact and electron-ohmic contact layer in all-ohmic OLEDs, respectively, Third, the electronic structure of the $Rb_2CO_3$-doped $C_{60}$-doped interfaces were investigated by analyzing photoemission properties, such as x-ray photoemission spectroscopy (XPS), Ultraviolet Photoemission spectroscopy (UPS), and Near-edge x-ray absorption fine structure (NEXAFS) spectroscopy, as a doping concentration at the interfaces of $Rb_2CO_3$-doped fullerene are changed. Finally, the correlation between the device performance in all ohmic devices and the interfacial property of the $Rb_2CO_3$-doped $C_{60}$ thin film was discussed with an energy band diagram.

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Development of RF Ion Source for Neutral Beam Injector in Fusion Devices

  • Jang, Du-Hui;Park, Min;Kim, Seon-Ho;Jeong, Seung-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.550-551
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    • 2013
  • Large-area RF-driven ion source is being developed at Germany for the heating and current drive of ITER plasmas. Negative hydrogen (deuterium) ion sources are major components of neutral beam injection systems in future large-scale fusion experiments such as ITER and DEMO. RF ion sources for the production of positive hydrogen ions have been successfully developed at IPP (Max-Planck- Institute for Plasma Physics, Garching) for ASDEX-U and W7-AS neutral beam injection (NBI) systems. In recent, the first NBI system (NBI-1) has been developed successfully for the KSTAR. The first and second long-pulse ion sources (LPIS-1 and LPIS-2) of NBI-1 system consist of a magnetic bucket plasma generator with multi-pole cusp fields, filament heating structure, and a set of tetrode accelerators with circular apertures. There is a development plan of large-area RF ion source at KAERI to extract the positive ions, which can be used for the second NBI (NBI-2) system of KSTAR, and to extract the negative ions for future fusion devices such as ITER and K-DEMO. The large-area RF ion source consists of a driver region, including a helical antenna (6-turn copper tube with an outer diameter of 6 mm) and a discharge chamber (ceramic and/or quartz tubes with an inner diameter of 200 mm, a height of 150 mm, and a thickness of 8 mm), and an expansion region (magnetic bucket of prototype LPIS in the KAERI). RF power can be transferred up to 10 kW with a fixed frequency of 2 MHz through a matching circuit (auto- and manual-matching apparatus). Argon gas is commonly injected to the initial ignition of RF plasma discharge, and then hydrogen gas instead of argon gas is finally injected for the RF plasma sustainment. The uniformities of plasma density and electron temperature at the lowest area of expansion region (a distance of 300 mm from the driver region) are measured by using two electrostatic probes in the directions of short- and long-dimension of expansion region.

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Development of Large-Area RF Ion Source for Neutral Beam Injector in Fusion Devices

  • Chang, Doo-Hee;Jeong, Seung Ho;Kim, Tae-Seong;Park, Min;Lee, Kwang Won;In, Sang Ryul
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.179.2-179.2
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    • 2013
  • A large-area RF-driven ion source is being developed at Germany for the heating and current drive of ITER device. Negative hydrogen ion sources are major components of neutral beam injection (NBI) systems in future large-scale fusion experiments such as ITER and DEMO. The RF sources for the production of positive hydrogen ions have been successfully developed at IPP (Max-Planck-Institute for Plasma Physics), Garching, for the ASDEX-U and W7-AS neutral beam heating systems. Ion sources of the first NBI system (NBI-1) for the KSTAR tokamak have been developed successfully with a bucket plasma generator based on the filament arc discharge, which have contributed to achieve a good plasma performance such as 15 sec H-mode operation with an injection of 3.5 MW NB power. There is a development plan of RF ion source at the KAERI to extract the positive ions, which can be used for the second NBI system (NBI-2) of the KSTAR and to extract the negative ions for future fusion devices such as Fusion Neutron Source and Korea-DEMO. The development progresses of RF ion source at the KAERI are described in this presentation.

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High Performance GaN-Based Light-Emitting Diodes by Increased Hole Concentration Via Graphene Oxide Sheets

  • Jeong, Hyun;Jeong, Seung Yol;Jeong, Hyun Joon;Park, Doo Jae;Kim, Yong Hwan;Kim, HyoJung;Lee, Geon-Woong;Jeong, Mun Seok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.244.1-244.1
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    • 2013
  • The p-type GaN which act as a hole injection layer in GaN-based LEDs has fundamental problems. The first one arises from the difficulty in growing a highly doped p-GaN (with a carrier concentration exceeding ~1018 $cm^{-3}$). And the second one is the absence of appropriate metals or conducting oxides having a work function that is larger than that of p-type GaN (7.5 eV). Moreover, the LED efficiency is decreases gradually as the injection current increases (the so-called 'efficiency droop' phenomenon). The efficiency droop phenomenon in InGaN quantum wells (QWs) has been a large obstacle that has hindered high-efficiency operation at high current density. In this study, we introduce the new approaches to improve the light-output power of LEDs by using graphene oxide sheets. Graphene oxide has many functional groups such as the oxygen epoxide, the hydroxyl, and the carboxyl groups. Due to nature of such functional groups, graphene oxide possess a lot of hole carriers. If graphene oxide combine with LED top surface, graphene oxide may supply hole carriers to p-type GaN layer which has relatively low free carrier concentration less than electron concentration in n-type GaN layer. To prove the enhancement factor of graphene oxide coated LEDs, we have investigated electrical and optical properties by using ultra-violet photo-excited spectroscopy, confocal scanning electroluminescence microscopy.

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