• Food Engineering Progress
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• v.14 no.3
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• pp.193-201
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• 2010

The aim of this study was to analyse the quality of Yukwa puffed by using a vacuum puffing machine and compare to deep-fried Yukwa. The effect of vacuum puffing condition including heating temperature(100-${160^{\circ}C}$), preheating time(0-8 min) and vacuum puffing time(5-20 min) on physical and microstructure characteristics of the Yukwa was investigated. Vacuum puffed Yukwa at ${100^{\circ}C}$ heating temperature, 6 min preheating time and 10 min puffing time had highest value in volumetric expansion ratio(10.04) and lowest value in bulk density(0.15 g/$cm^{3}$). The breaking strength showed the lowest value of 140 g/$cm^{3}$ in vacuum puffing Yukwa at ${100^{\circ}C}$ heating temperature, 6 min preheating time and 15 min puffing time. The Yukwa puffed with the vacuum puffing machine at ${100^{\circ}C}$ heating temperature, 6 min preheating time and 15 min puffing time had the higher value of bulk density and the lower value of volumetric expansion ratio than those of deep-fried Yukwa. Increasing preheating time and vacuum puffing time caused an increase in white and an decrease in yellowness. The vacuum-puffed Yukwa exhibited smaller and uniform cell structure, while deep-fried Yukwa exhibited apparently in larger pores inside and smaller pores near the surface layer. The optimum condition of vacuum puffing machine for the production of vacuum-puffing Yukwa was ${120^{\circ}C}$ heating temperature, 4 min preheating time and 5 min puffing time.

• 유체기계공업학회:학술대회논문집
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• 2002.12a
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• pp.161-164
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• 2002

Present condition of small fan used in appliances and IT industry is briefly reviewed. Here, fans used in refrigerator, air-conditioner, vacuum cleaner, microwave oven and computer are surveyed. Also some comments about the issue of each fan is described.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.429-429
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• 2012

To investigate the gettering effect of B-doped n-type monocrystalline silicon wafer, we made the p-n junction by diffusing boron into n-type monocrystalline Si substrate and then oxidized the boron doped n-type monocrystalline silicon wafer by in-situ wet and dry oxidation. After oxidation, the minority carrier lifetime was measured by using microwave photoconductance and the sheet resistance by 4-point probe, respectively. The junction depth was analyzed by Secondary Ion Mass Spectrometry (SIMS). Boron diffusion reduced the metal impurities in the bulk of silicon wafer and increased the minority carrier lifetime. In the case of wet oxidation, the sheet resistance value of ${\sim}46{\Omega}/{\Box}$ was obtained at $900^{\circ}C$, depostion time 50 min, and drive-in time 10 min. Uniformity was ~7% at $925^{\circ}C$, deposition time 30 min, and drive-in time 10 min. Finally, the minority carrier lifetime was shown to be increased from $3.3{\mu}s$ for bare wafer to $21.6{\mu}s$ for $900^{\circ}C$, deposition 40 min, and drive-in 10 min condition. In the case of dry oxidation, for the condition of 50 min deposition, 10 min drive-in, and O2 flow of 2000 SCCM, the minority carrier lifetime of 16.3us, the sheet resistance of ${\sim}48{\Omega}/{\Box}$, and uniformity of 2% were measured.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.259-259
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• 2015

Single crystalline indium-tin-oxide (ITO) nanowires (NWs) were grown by sputtering method. A thin Ni film of 5 nm was deposited before ITO sputtering. Thermal treatment forms Ni nanoparticles, which act as templates to diffuse Ni into the sputtered ITO layer to grow single crystalline ITO NWs. This Ni diffusion through an ITO NW was investigated by transmission electron microscope to observe the Ni-tip sitting on a single crystalline ITO NW. Meanwhile, a single crystalline ITO structure was found at bottom and body part of a single ITO NW without remaining of Ni atoms. This indicates the Ni atoms diffuse through the oxygen vacancies of ITO structure. Rapid thermal process (RTP) applied to generate an initial stage of a formation of Ni nanoparticles with variation in time periods to demonstrate the existence of an optimum condition to initiate ITO NW growth. Modulation in ITO sputtering condition was applied to verify the ITO NW growth or the ITO film growth. The Ni-assisted grown ITO layer has an improved electrical conductivity while maintaining a similar transmittance value to that of a single ITO layer. Electrically conductive and optically transparent nanowire-coated surface morphology would provide a great opportunity for various photoelectric devices.

• Journal of the Korean Vacuum Society
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• v.8 no.4B
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• pp.541-547
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• 1999

Reactive ion etching process for InP using BCl3/O2/Ar high density inductively coupled plasma was investigated. The experimental design method proposed by the Taguchi was utilized to cover the whole parameter range while maintaining reasonable number of actual experiments. Results showed that the ICP power and the chamber pressure were the two dominant parameters affectsing etch results. It was also observed that the etch rate decreased and the surface roughness improved as the ICP power and the bias voltage increased and as the chamber pressure decreased. The Addition of oxygen to the gas mixture drastically improved surface roughness by suppressing the formation of the surface reaction product. The optimum condition was ICP power 600W, bias voltage -100V, 10% $O_2$, 6mTorr, and $180^{\circ}C$, resulting in about 0.15$\mu\textrm{m}$ etch rate with smooth surfaces and vertical mesa sidewalls Also, the maximum etch rate of abut 4.5 $\mu\textrm{m}$/min was obtained at the condition of ICP power 800W, bias voltage -150V, 15% $O_2$, 8mTorr and $160^{\circ}C$.

• Proceedings of the Korean Geotechical Society Conference
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• 2006.03a
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• pp.1165-1172
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• 2006

In this study, an aspect of settlement, developed from different ground improvement method like suction drain method using vacuum pressure and vertical drain method using overburden pressure, was compared each other. In order to analyze settlement tendency of each method exactly, the finite element analysis program was used. The analyses of vertical settlement and lateral displacement for suction drain method and vertical drain method were conducted independently during the solving stage. The initial condition of drainage zone was fixed with 25m depth and 21m width. After the program analyses, the settlement condition had a different tendency with the ground improvement method. Especially, in the results of vertical drain method, the disparity of settlement between the middle of improved zone and unimproved zone. In the case of suction drain method, however, the difference of settlement was smaller than that of vertical drain method.

• Journal of Advanced Marine Engineering and Technology
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• v.30 no.6
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• pp.677-684
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• 2006

An ejector is a fluid transfer device to be used for mixing of fluids, maintaining vacuum, and overcoming a poor suction condition. To date, most ejectors have been made from the casting process. which is time-consuming and high-cost process. Therefore, a new production method of ejectors is desired if any. In this experimental study, we proposed a new type ejector manufactured from the commercial fitting materials and the welding process, which is equipped with an orifice type nozzle. The proposed ejector has a good integrity compared with the conventional ejector because the fittings have manufactured by forging and they have more strength than the casting materials. Furthermore we adopted a multi-opening orifice type nozzle for improving a suction capacity and compared with a single-opening orifice type nozzle. From the experimental results. we confirmed that the multi-opening nozzle had a food suction capacity than the single-opening nozzle and the proposed new type ejector showed higher vacuum than the conventional type ejector in non-load condition. These improved characteristics suggests that a new type ejector by using the commercial fittings opens the feasibility to be adopted in various industry fields and that the increased suction capacity can be achieved by altering the nozzle design of a conventional ejector.

• Elastomers and Composites
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• v.50 no.1
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• pp.30-34
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• 2015

Thermo-mechanical treatment process of a compressed open-cell rigid polyurethane foam (OC-RPUF), which was fabricated for the vacuum insulation panel (VIP), was studied to obtain an optimum condition for the dimensional stability by the relaxation of compressive stress. Thermo-mechanical deformation of the sample OC-RPUF was shown to occur from about $120^{\circ}C$. Yield stress of 0.36 MPa was shown at about 10% yield strain. And, densification of the foam started to occur from 75% compressive strain and could be continued up to max. 90%. Compression set of the sample restored after initial compression to 90% at room temperature was ca. 82%. Though the expansion occurred to about twice of the originally compressed thickness in case of temperature rise to $130^{\circ}C$, it could be overcome and the dimensional stability could be maintained if the constant load of 0.3 MPa was applied. As the result, a thermo-mechanical treatment process, i.e, annealing process at temperature of $130{\sim}140^{\circ}C$ for about 20 min as is the maximum compressed state at room temperature, should be required for dimensional stability as an optimum condition for the use of VIP core material.

• Journal of Welding and Joining
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• v.19 no.2
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• pp.191-199
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• 2001

The oxidation and recrystallization behaviors of Ni-base single crystal superalloy, CMSX-2 were investigated to determine the condition of the preparation for transient liquid phase (TLP) bonding operations. The faying surfaces of CMSX-2 were worked by the shot peening, fine cutting and mechanical polishing treatments and the degree of working of treated surfaces was evaluated by the hardness test and X-ray diffraction method CMSX-2 was heat-treated at 1,173∼1.589k for 3.6ks in vacuum of 4mPa. The mechanically polished surface was slightly oxidized after heat treatment even in the vacuum atmosphere of 4mPa. The thickness of an oxide film increased with increasing the heating temperature and the surface roughness of the faying surface. Recrystallization occurred at the surface after heat treatment at above 1,423K when the hardness was increased more than Hv600 by the shot peening treatment while the mechanically polished or fine cut surfaces didn't recrystallized. Based on these results, it was clearfied that the mechanically polishing with fine abrasive grit could be used for the preparation of faying surface of CMSX-2 before bonding operation.

• Food Science and Preservation
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• v.1 no.2
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• pp.81-86
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• 1994

This study examined the quality change of red peppers during storage at various temperatures and humidities. It was observed that red peppers showed mold at aw 0.75(>25% water content), discoloration at aw 0.33(<10%) and browning at aw 0.75(>19%). The most ideal condition of the storage for red peppers was a 13∼15% water content and 60${\pm}$5% RH. The storage life for whole red peppers were 2.0 months at 40$^{\circ}C$, 13.6 months at 25$^{\circ}C$, 27.3 months at 15$^{\circ}C$, 30.0 months at 10$^{\circ}C$, and 65.0 months at -3$^{\circ}C$. During any storage period above, level of capsanthin, browning and capsaicin were changed for whole peppers. Browning appeared to be a crucial factor for marketable quality of stored red peppers. It was found that the level of capsaicin & capsanthin have a miner relationship with marketable quality for consumer. Storing red peppers in nitrogen and vacuum atmosphere packing condition was found to be better than storing them in air at various temperatures in terms of storage life and quality maintenance. The nitrogen gas packaged red peppers kept longer shelf life and better quality compared with vacuum packaging.