• 제목/요약/키워드: Vacuum Injection

검색결과 261건 처리시간 0.042초

진공도가 사출성형제품에 미치는 영향에 관한 연구 (A study on the Influence Affected on Injection Molding Product by Vacuum Degree)

  • 이은종;신남호
    • 한국산학기술학회논문지
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    • 제4권3호
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    • pp.183-188
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    • 2003
  • 본 연구는 Connector Mold의 Termina (리브)에 가스 모임으로 인한 미성형 및 웰드라인이 생성되어 이를 방지하기 위해 과다한 사출압력, 금형온도 및 수지온도를 높이므로 Burr둥의 불량현상이 발생하게된다. 따라서 연구에서는 진공성형시스템을 응용한 Connector Mold를 개발하기 위하여 사출성형의 중요한 인자가 되는 용융수지온도, 금형온도, 냉각조건을 최적 조건에서 진공압을 체계적으로 제어함으로 각 캐비티의 깊은 글 부분의 미충전 부분을 진공화 하여 충전불량을 해소하면서, 싸이클 시간을 단축시킬 수 있는 진공시스템을 연구개발 성형가공에 적용함으로 우수한 제품과 생산성 향상의 효과를 얻을 수 있다.

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물 분사 및 배기가스 구동형 진공펌프를 이용한 매연여과장치에 대한 실험적 연구 (An Experimental Study on the Smoke Filtration System Using Water Injection and Vacuum Pump driven by Exhaust Gas)

  • 이한성;김경현;정석호;고대권
    • 동력기계공학회지
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    • 제17권3호
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    • pp.17-22
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    • 2013
  • Diesel particulate filter has been adopted in new vehicle with diesel engine. Since the flow of exhaust gas was clogged as particulate matters were deposited in the filter, it have bad effects on a fuel consumption and power. It was investigated that a particulate filtering system with vacuum pump in the exhaust gas line could be free from clogging in previous research. In this study, the effects of water injection and position of inlet port in filtering system on reducing in particulate matter were investigated. It was noticed that particulate matter were decreased remarkable by water injection and moving the position of inlet port.

Improvement of Fluid Transfer Using Pneumatic Fracturing, Plasma Blasting, and Vacuum Suction

  • Lee, Geun-Chun;Song, Jae-Yong;Kang, Cha-Won;Jang, Hyun-Shic;Jang, Bo-An;Park, Yu-Chul
    • 지질공학
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    • 제32권1호
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    • pp.127-142
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    • 2022
  • This study explored the fluid transfer characteristics of simultaneous pneumatic blasting, plasma blasting, and vacuum suction (the PPV method), and assessed their effect. Chemical oxidation-an established soil remediation method-was compared as a control. Electrical resistivity surveys found that PPV reduced resistivity by about 1.5-2.5 times compared with the control group, indicating that it increased the diffusion of fluid between the injection and suction wells. Injection and suction tests comparing the injection flow rate, initial suction flow rate time, and suction flow rate showed that the PPV method offered an improvement over the existing method. Slug tests revealed that PPV increased the permeability coefficient by a greater amount than that by the control method. This study qualitatively and quantitatively confirmed that the PPV method clearly improves injection and suction efficiency by accelerating cracks in the ground and improving water permeability compared with the established chemical oxidation method.

Study on the Electron Injection of Newly Synthesized Organic Sensitizer in Dye-Sensitized Solar Cell

  • 강태연;이도권;고민재;김경곤
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.310-310
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    • 2010
  • Electronic and photovoltaic characteristics of two sensitizers (TA-BTD-CA and TA-BTD-St-CA), composed of a different $\pi$-conjugation in the linker group, have been investigated by theoretical and experimental methods. The electronic structure, transition dipole moment and oscillator strengths of two sensitizers have been scrutinized by using density functional theory (DFT) and time-dependent DFT (TD-DFT) method. The LUMO level and the oscillator strength of TA-BTD-St-CA was higher than that of TA-BTD-CA, which may facilitate the electron injection process as well as increase the absorption coefficient. The relative efficiencies of the electron injection from the excited sensitizer to nanocrystalline TiO2 and SnO2 films have also been investigated by nanosecond transient absorption spectroscopy. The relative electron injection efficiency of TA-BTD-St-CA exhibited similar injection efficiency for two different semiconductors. However, in the case of TA-BTD-CA sensitizer, electron injection into SnO2 was approximately three times larger than that into TiO2. This enhancement of electron injection of TA-BTD-CA for the SnO2 is due to the increment of the driving force caused by positive shift of conduction band of semiconductor, which was also confirmed from the investigation for the photovoltaic characteristics according to the electrolyte additive, such as LiI additive.

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Quantum Dot Based Mode-Locked Diode Lasers and Coherent Buried Heterostructure Photonic Crystal Nano Lasers

  • 김지명
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.122-122
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    • 2013
  • In this talk, some optical properties of quantum dot based mode-locked diode lasers and photonic crystal nano lasers will be discussed. Linewidth enhancement factor, chirp and interband injection locking technique of quantum dot mode-locked lasers will be presented. Also various types of photonic crystal buried heterostructure lasers toward coherent nano laser will be covered as well.

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Interfacial Electronic Structures for Electron and Hole Injection in Organic Devices: Nanometer Layers of CsN3 and 1,4,5,8,-naphthalene-tetracarboxylic-dianhydride (NTCDA)

  • Yi, Yeon-Jin;Jeon, Pyeongeu;Lee, Jai-Hyun;Jeong, Kwang-Ho;Kim, Jeong-Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.90-90
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    • 2012
  • The electron/hole injections in organic electronic devices have long been an issue due to the large energy level mismatches between electrode and organic layer. To utilize the organic materials in electronic devices, functional thin layers have been used, which reduce the electron/hole injection barrier from electrode to organic material. Typically, inorganic compounds and organic molecules are used as an electron and hole injection layer, respectively. Recently, CsN3 and 1,4,5,8,- naphthalene-tetracarboxylic-dianhydride (NTCDA) are reported as a potential electron and hole injection layers. CsN3 shows unique properties that it breaks into Cs and N and thus Cs can dope organic layer into n-type. On the other side, hole injection anode, NTCDA forms gap states with anode material. In this presentation, we show the electronic structure changes upon the insertion of CsN3 and NTCDA at proper interfaces to reduce the charge injection barriers. These barrier reductions are correlated with device characteristics.

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